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DE69209468D1 - Magnetowiderstandseffekt-Element - Google Patents

Magnetowiderstandseffekt-Element

Info

Publication number
DE69209468D1
DE69209468D1 DE69209468T DE69209468T DE69209468D1 DE 69209468 D1 DE69209468 D1 DE 69209468D1 DE 69209468 T DE69209468 T DE 69209468T DE 69209468 T DE69209468 T DE 69209468T DE 69209468 D1 DE69209468 D1 DE 69209468D1
Authority
DE
Germany
Prior art keywords
effect element
magnetic resistance
resistance effect
magnetic
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69209468T
Other languages
English (en)
Other versions
DE69209468T2 (de
Inventor
Teruya Shinjo
Hidefumi Yamamoto
Toshihiko Anno
Toshio Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
NEC Corp
Research Institute for Production Development
TDK Corp
Original Assignee
NEC Corp
Research Institute for Production Development
TDK Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Research Institute for Production Development, TDK Corp, Matsushita Electric Industrial Co Ltd filed Critical NEC Corp
Application granted granted Critical
Publication of DE69209468D1 publication Critical patent/DE69209468D1/de
Publication of DE69209468T2 publication Critical patent/DE69209468T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
DE69209468T 1991-12-24 1992-12-18 Magnetowiderstandseffekt-Element Expired - Lifetime DE69209468T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34080191A JP3207477B2 (ja) 1991-12-24 1991-12-24 磁気抵抗効果素子

Publications (2)

Publication Number Publication Date
DE69209468D1 true DE69209468D1 (de) 1996-05-02
DE69209468T2 DE69209468T2 (de) 1996-12-12

Family

ID=18340417

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209468T Expired - Lifetime DE69209468T2 (de) 1991-12-24 1992-12-18 Magnetowiderstandseffekt-Element

Country Status (4)

Country Link
US (1) US5462795A (de)
EP (1) EP0548841B1 (de)
JP (1) JP3207477B2 (de)
DE (1) DE69209468T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3381957B2 (ja) * 1992-08-03 2003-03-04 株式会社東芝 磁気抵抗効果素子、磁気ヘッドおよび磁気センサ
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
DE4301704A1 (de) * 1993-01-22 1994-07-28 Siemens Ag Vorrichtung zum Erfassen einer Winkelposition eines Objektes
JP3219329B2 (ja) * 1993-02-03 2001-10-15 財団法人生産開発科学研究所 磁気抵抗効果素子
FR2709600B1 (fr) * 1993-09-02 1995-09-29 Commissariat Energie Atomique Composant et capteur magnétorésistifs à motif géométrique répété.
US6256222B1 (en) 1994-05-02 2001-07-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
US5841611A (en) * 1994-05-02 1998-11-24 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same
EP0685746A3 (de) * 1994-05-30 1996-12-04 Sony Corp Maqnetowiderstandeffektanordnung mit verbessertem thermischem Widerstand.
JP2701743B2 (ja) * 1994-07-01 1998-01-21 日本電気株式会社 グラニュラー物質およびこれを用いたグラニュラー膜
JP2738312B2 (ja) * 1994-09-08 1998-04-08 日本電気株式会社 磁気抵抗効果膜およびその製造方法
US6001430A (en) * 1994-09-08 1999-12-14 Nec Corporation Magnetoresistance effect film and production process thereof
FR2729790A1 (fr) * 1995-01-24 1996-07-26 Commissariat Energie Atomique Magnetoresistance geante, procede de fabrication et application a un capteur magnetique
JP2748876B2 (ja) * 1995-01-27 1998-05-13 日本電気株式会社 磁気抵抗効果膜
JP2720806B2 (ja) * 1995-01-31 1998-03-04 日本電気株式会社 磁気抵抗効果型ヘッドおよびその製造方法
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5896252A (en) * 1995-08-11 1999-04-20 Fujitsu Limited Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same
US6124711A (en) * 1996-01-19 2000-09-26 Fujitsu Limited Magnetic sensor using tunnel resistance to detect an external magnetic field
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
DE19720197C2 (de) * 1997-05-14 2001-11-15 Siemens Ag Dünnschichtenaufbau eines magnetfeldempfindlichen Sensors mit einem einen erhöhten magnetoresistiven Effekt zeigenden Magnetschichtensystem
US5976681A (en) * 1997-06-30 1999-11-02 Ford Global Technologies, Inc. Giant magnetoresistors with high sensitivity and reduced hysteresis
US6150015A (en) 1997-12-04 2000-11-21 Komag, Incorporated Ultra-thin nucleation layer for magnetic thin film media and the method for manufacturing the same
US6226159B1 (en) 1999-06-25 2001-05-01 International Business Machines Corporation Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6645614B1 (en) 2000-07-25 2003-11-11 Seagate Technology Llc Magnetic recording media having enhanced coupling between magnetic layers
US20050013060A1 (en) * 2003-07-14 2005-01-20 International Business Machines Corporation Magnetoresistive sensor
US7446985B2 (en) * 2003-12-19 2008-11-04 Agency For Science Technology And Research Epitaxial oxide cap layers for enhancing GMR performance
JP2008218641A (ja) * 2007-03-02 2008-09-18 Tohoku Univ トンネル磁気抵抗効果素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3088478B2 (ja) * 1990-05-21 2000-09-18 財団法人生産開発科学研究所 磁気抵抗効果素子
JP2957233B2 (ja) * 1990-06-15 1999-10-04 ティーディーケイ株式会社 磁性多層膜
JP2690623B2 (ja) * 1991-02-04 1997-12-10 松下電器産業株式会社 磁気抵抗効果素子
JP2964690B2 (ja) 1991-05-02 1999-10-18 松下電器産業株式会社 磁気抵抗効果材料およびその製造方法
JP2961914B2 (ja) 1991-03-08 1999-10-12 松下電器産業株式会社 磁気抵抗効果材料およびその製造方法
US5277991A (en) * 1991-03-08 1994-01-11 Matsushita Electric Industrial Co., Ltd. Magnetoresistive materials
EP0506433B2 (de) * 1991-03-29 2007-08-01 Kabushiki Kaisha Toshiba Magnetowiderstandseffekt-Element
JP3088519B2 (ja) 1991-10-23 2000-09-18 財団法人生産開発科学研究所 磁気抵抗効果素子

Also Published As

Publication number Publication date
DE69209468T2 (de) 1996-12-12
EP0548841B1 (de) 1996-03-27
JP3207477B2 (ja) 2001-09-10
JPH05175571A (ja) 1993-07-13
US5462795A (en) 1995-10-31
EP0548841A1 (de) 1993-06-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKYO, JP

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

Owner name: SEISAN KAIHATSU KAGAKU KENKYUSHO, KYOTO, JP

Owner name: TDK CORP., TOKYO, JP

R071 Expiry of right

Ref document number: 548841

Country of ref document: EP