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DE69201292D1 - Vorrichtung zur Einkristallziehung. - Google Patents

Vorrichtung zur Einkristallziehung.

Info

Publication number
DE69201292D1
DE69201292D1 DE69201292T DE69201292T DE69201292D1 DE 69201292 D1 DE69201292 D1 DE 69201292D1 DE 69201292 T DE69201292 T DE 69201292T DE 69201292 T DE69201292 T DE 69201292T DE 69201292 D1 DE69201292 D1 DE 69201292D1
Authority
DE
Germany
Prior art keywords
single crystal
pulling device
crystal pulling
pulling
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201292T
Other languages
English (en)
Other versions
DE69201292T2 (de
Inventor
Kiyotaka Takano
Izumi Fusegawa
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3298028A external-priority patent/JP2620999B2/ja
Priority claimed from JP03310106A external-priority patent/JP3123155B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69201292D1 publication Critical patent/DE69201292D1/de
Application granted granted Critical
Publication of DE69201292T2 publication Critical patent/DE69201292T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69201292T 1991-10-17 1992-10-16 Vorrichtung zur Einkristallziehung. Expired - Fee Related DE69201292T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3298028A JP2620999B2 (ja) 1991-10-17 1991-10-17 単結晶引上装置
JP03310106A JP3123155B2 (ja) 1991-10-30 1991-10-30 単結晶引上装置

Publications (2)

Publication Number Publication Date
DE69201292D1 true DE69201292D1 (de) 1995-03-09
DE69201292T2 DE69201292T2 (de) 1995-09-14

Family

ID=26561345

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201292T Expired - Fee Related DE69201292T2 (de) 1991-10-17 1992-10-16 Vorrichtung zur Einkristallziehung.

Country Status (3)

Country Link
US (1) US5373805A (de)
EP (1) EP0538048B1 (de)
DE (1) DE69201292T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2686223B2 (ja) * 1993-11-30 1997-12-08 住友シチックス株式会社 単結晶製造装置
JPH07247197A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置とその製造方法
US5501172A (en) * 1994-03-11 1996-03-26 Shin-Etsu Handotai Co., Ltd. Method of growing silicon single crystals
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
US5733371A (en) * 1995-03-16 1998-03-31 Sumitomo Electric Industries, Ltd. Apparatus for growing a single crystal
JPH09183686A (ja) * 1995-12-27 1997-07-15 Shin Etsu Handotai Co Ltd 単結晶引き上げ方法及び装置
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US5993902A (en) * 1997-04-09 1999-11-30 Seh America, Inc. Apparatus and method for extending the lifetime of an exhaust sleeve for growing single crystal silicon by silicon nitride (SI3 N4) coating
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US6115903A (en) 1997-10-02 2000-09-12 Seh America, Inc. Purge tube removal and replacement
DE19882384T1 (de) * 1998-03-12 2000-07-27 Super Silicon Crystal Res Inst Zusatzschmelzvorrichtung für einkristallines Material und Verfahren zum Schmelzen von einkristallinem Material
US6179914B1 (en) 1999-02-02 2001-01-30 Seh America, Inc. Dopant delivery system and method
US6749683B2 (en) 2000-02-14 2004-06-15 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6344083B1 (en) * 2000-02-14 2002-02-05 Memc Electronic Materials, Inc. Process for producing a silicon melt
JP2002170780A (ja) * 2000-12-01 2002-06-14 Sharp Corp ルツボおよびそれを使用した多結晶シリコンの成長方法
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
US8152921B2 (en) 2006-09-01 2012-04-10 Okmetic Oyj Crystal manufacturing
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
US9745666B2 (en) * 2012-09-10 2017-08-29 Gtat Ip Holding Llc Continuous czochralski method and apparatus
JP5904079B2 (ja) 2012-10-03 2016-04-13 信越半導体株式会社 シリコン単結晶育成装置及びシリコン単結晶育成方法
EP2886519B1 (de) * 2013-12-18 2016-05-25 Heraeus Quarzglas GmbH & Co. KG Vertikal-tiegelziehverfahren zur herstellung eines glaskörpers mit hohem kieselsäuregehalt
JP6950581B2 (ja) * 2018-02-28 2021-10-13 株式会社Sumco シリコン単結晶の製造方法およびシリコン単結晶の引き上げ装置
CN111763985B (zh) * 2020-07-01 2021-10-19 中国科学院上海微系统与信息技术研究所 一种用于单晶生产炉的热屏结构及单晶生产炉
CN114197034B (zh) * 2020-09-02 2024-08-16 西安奕斯伟材料科技股份有限公司 一种单晶炉的组合套筒及单晶炉
KR102615072B1 (ko) 2020-09-02 2023-12-15 시안 이에스윈 머티리얼즈 테크놀로지 컴퍼니 리미티드 단결정 풀러의 컴바인 콘 튜브 및 단결정 풀러
CN113529161B (zh) * 2021-07-16 2023-06-27 沈阳工程学院 一种焰熔法钛酸锶单晶体生长装置
CN114164487B (zh) * 2022-02-10 2022-05-27 杭州中欣晶圆半导体股份有限公司 一种横向码放多晶硅原料的石英加料系统及无损添加方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
DE3005492C2 (de) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
JPH02107587A (ja) * 1988-10-13 1990-04-19 Mitsubishi Metal Corp 半導体単結晶育成装置
JP2640683B2 (ja) * 1988-12-12 1997-08-13 信越半導体株式会社 単結晶棒の引上げ装置
JPH0388794A (ja) * 1989-08-31 1991-04-15 Nippon Steel Corp シリコン単結晶の引上げ方法および装置
WO1991005891A1 (en) * 1989-10-16 1991-05-02 Nkk Corporation Apparatus for manufacturing silicon single crystals
JPH0777995B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の比抵抗コントロール方法

Also Published As

Publication number Publication date
US5373805A (en) 1994-12-20
EP0538048B1 (de) 1995-01-25
DE69201292T2 (de) 1995-09-14
EP0538048A1 (de) 1993-04-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee