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DE69112447D1 - Dynamische RAM-Einrichtung. - Google Patents

Dynamische RAM-Einrichtung.

Info

Publication number
DE69112447D1
DE69112447D1 DE69112447T DE69112447T DE69112447D1 DE 69112447 D1 DE69112447 D1 DE 69112447D1 DE 69112447 T DE69112447 T DE 69112447T DE 69112447 T DE69112447 T DE 69112447T DE 69112447 D1 DE69112447 D1 DE 69112447D1
Authority
DE
Germany
Prior art keywords
dynamic ram
setup
ram setup
dynamic
ram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112447T
Other languages
English (en)
Other versions
DE69112447T2 (de
Inventor
Takeo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69112447D1 publication Critical patent/DE69112447D1/de
Application granted granted Critical
Publication of DE69112447T2 publication Critical patent/DE69112447T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69112447T 1990-02-05 1991-02-05 Dynamische RAM-Einrichtung. Expired - Fee Related DE69112447T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2025656A JPH03229459A (ja) 1990-02-05 1990-02-05 半導体メモリおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69112447D1 true DE69112447D1 (de) 1995-10-05
DE69112447T2 DE69112447T2 (de) 1996-02-29

Family

ID=12171862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112447T Expired - Fee Related DE69112447T2 (de) 1990-02-05 1991-02-05 Dynamische RAM-Einrichtung.

Country Status (5)

Country Link
US (1) US5187549A (de)
EP (1) EP0443746B1 (de)
JP (1) JPH03229459A (de)
KR (1) KR950003914B1 (de)
DE (1) DE69112447T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020023972A1 (en) * 2000-06-13 2002-02-28 Kah Carl L. C. Closed case oscillating sprinkler
US5825609A (en) * 1996-04-23 1998-10-20 International Business Machines Corporation Compound electrode stack capacitor
KR100230367B1 (ko) * 1996-08-19 1999-11-15 윤종용 반도체 디바이스의 제조방법
US5926718A (en) * 1996-08-20 1999-07-20 Micron Technology, Inc. Method for forming a capacitor
KR19980064132A (ko) * 1996-12-16 1998-10-07 윌리엄비.켐플러 동적 랜덤 액세스 메모리 어레이의 레이아웃

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62202397A (ja) * 1986-02-28 1987-09-07 Fujitsu Ltd 半導体記憶装置
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
JP2590171B2 (ja) * 1988-01-08 1997-03-12 株式会社日立製作所 半導体記憶装置
JP2723530B2 (ja) * 1988-04-13 1998-03-09 日本電気株式会社 ダイナミック型ランダムアクセスメモリ装置の製造方法

Also Published As

Publication number Publication date
EP0443746B1 (de) 1995-08-30
KR910016081A (ko) 1991-09-30
JPH03229459A (ja) 1991-10-11
DE69112447T2 (de) 1996-02-29
EP0443746A1 (de) 1991-08-28
KR950003914B1 (ko) 1995-04-20
US5187549A (en) 1993-02-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee