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DE69104300D1 - Ultraviolett-Halbleiterlaser und Verfahren zur Herstellung desselben. - Google Patents

Ultraviolett-Halbleiterlaser und Verfahren zur Herstellung desselben.

Info

Publication number
DE69104300D1
DE69104300D1 DE69104300T DE69104300T DE69104300D1 DE 69104300 D1 DE69104300 D1 DE 69104300D1 DE 69104300 T DE69104300 T DE 69104300T DE 69104300 T DE69104300 T DE 69104300T DE 69104300 D1 DE69104300 D1 DE 69104300D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
semiconductor laser
ultraviolet semiconductor
ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69104300T
Other languages
English (en)
Other versions
DE69104300T2 (de
Inventor
Yasuo Ohba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69104300D1 publication Critical patent/DE69104300D1/de
Application granted granted Critical
Publication of DE69104300T2 publication Critical patent/DE69104300T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69104300T 1990-07-27 1991-07-26 Ultraviolett-Halbleiterlaser und Verfahren zur Herstellung desselben. Expired - Lifetime DE69104300T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02200428A JP3104979B2 (ja) 1990-07-27 1990-07-27 紫外域半導体レーザ，半導体素子およびこれらの製造方法

Publications (2)

Publication Number Publication Date
DE69104300D1 true DE69104300D1 (de) 1994-11-03
DE69104300T2 DE69104300T2 (de) 1995-02-23

Family

ID=16424137

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69104300T Expired - Lifetime DE69104300T2 (de) 1990-07-27 1991-07-26 Ultraviolett-Halbleiterlaser und Verfahren zur Herstellung desselben.

Country Status (4)

Country Link
US (1) US5228044A (de)
EP (1) EP0468814B1 (de)
JP (1) JP3104979B2 (de)
DE (1) DE69104300T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3414403B2 (ja) * 1995-06-21 2003-06-09 ローム株式会社 発光ダイオードチップおよびこれを用いた発光ダイオード
JP3398638B2 (ja) * 2000-01-28 2003-04-21 科学技術振興事業団 発光ダイオードおよび半導体レーザーとそれらの製造方法
JP3866540B2 (ja) * 2001-07-06 2007-01-10 株式会社東芝 窒化物半導体素子およびその製造方法
AU2002366856A1 (en) 2001-12-21 2003-07-09 Aixtron Ag Method for depositing iii-v semiconductor layers on a non-iii-v substrate
US6846754B2 (en) 2002-02-22 2005-01-25 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor layer and vapor phase growth method thereof
JP2003273397A (ja) * 2002-03-19 2003-09-26 Fuji Xerox Co Ltd 半導体発光素子、半導体複合素子、及び半導体発光素子の製造方法
DE112005000529B4 (de) 2004-03-30 2011-04-28 Showa Denko K.K., Minato-ku Verbindungshalbleiter-Vorrichtung, Herstellungsverfahren der Verbindungshalbleiter-Vorrichtung und Diode
JP4677629B2 (ja) * 2004-12-22 2011-04-27 独立行政法人物質・材料研究機構 窒化ホウ素膜表面に先端の尖った結晶が自己相似性フラクタル模様を呈して電子放出に適った密度で二次元分布してなる窒化ホウ素薄膜エミッターとその製造方法
US8084781B2 (en) 2005-09-07 2011-12-27 Showa Denko K.K. Compound semiconductor device
DE112006002403T5 (de) 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
WO2007052840A1 (en) 2005-11-07 2007-05-10 Showa Denko K.K. Semiconductor light-emitting diode
JP6479164B2 (ja) * 2014-08-28 2019-03-06 コニカ ミノルタ ラボラトリー ユー．エス．エー．，インコーポレイテッド 二次元層状材料の量子井戸接合デバイス、多重量子井戸デバイス及び量子井戸デバイスの製造方法
JP7266843B2 (ja) 2018-12-07 2023-05-01 日本圧着端子製造株式会社 コネクタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH079998B2 (ja) * 1988-01-07 1995-02-01 科学技術庁無機材質研究所長 立方晶窒化ほう素のＰ−ｎ接合型発光素子
US4980730A (en) * 1987-05-01 1990-12-25 National Institute For Research In Organic Materials Light emitting element of cubic boron nitride
JPH02192494A (ja) * 1989-01-20 1990-07-30 Sumitomo Electric Ind Ltd 複合材料

Also Published As

Publication number Publication date
EP0468814B1 (de) 1994-09-28
US5228044A (en) 1993-07-13
JPH0484486A (ja) 1992-03-17
JP3104979B2 (ja) 2000-10-30
EP0468814A2 (de) 1992-01-29
DE69104300T2 (de) 1995-02-23
EP0468814A3 (en) 1992-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)