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DE69026675D1 - MIS-Kapazitätselement - Google Patents

MIS-Kapazitätselement

Info

Publication number
DE69026675D1
DE69026675D1 DE69026675T DE69026675T DE69026675D1 DE 69026675 D1 DE69026675 D1 DE 69026675D1 DE 69026675 T DE69026675 T DE 69026675T DE 69026675 T DE69026675 T DE 69026675T DE 69026675 D1 DE69026675 D1 DE 69026675D1
Authority
DE
Germany
Prior art keywords
capacity element
mis capacity
mis
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026675T
Other languages
English (en)
Other versions
DE69026675T2 (de
Inventor
Hiroaki Anmo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69026675D1 publication Critical patent/DE69026675D1/de
Application granted granted Critical
Publication of DE69026675T2 publication Critical patent/DE69026675T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
DE69026675T 1989-10-19 1990-10-18 MIS-Kapazitätselement Expired - Fee Related DE69026675T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1272341A JP3038731B2 (ja) 1989-10-19 1989-10-19 半導体装置

Publications (2)

Publication Number Publication Date
DE69026675D1 true DE69026675D1 (de) 1996-05-30
DE69026675T2 DE69026675T2 (de) 1996-11-28

Family

ID=17512539

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026675T Expired - Fee Related DE69026675T2 (de) 1989-10-19 1990-10-18 MIS-Kapazitätselement

Country Status (5)

Country Link
US (1) US5055905A (de)
EP (1) EP0423791B1 (de)
JP (1) JP3038731B2 (de)
KR (1) KR100221440B1 (de)
DE (1) DE69026675T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04352467A (ja) * 1991-05-30 1992-12-07 Toshiba Corp Ｍｏｓ型半導体集積回路装置
KR940018967A (ko) * 1993-01-30 1994-08-19 오가 노리오 반도체장치 및 그 제조방법
US5377072A (en) * 1994-01-10 1994-12-27 Motorola Inc. Single metal-plate bypass capacitor
US5608258A (en) * 1995-03-16 1997-03-04 Zilog, Inc. MOS precision capacitor with low voltage coefficient
JPH1012825A (ja) * 1996-06-26 1998-01-16 Oki Electric Ind Co Ltd 半導体集積回路装置
JP2000021972A (ja) * 1998-07-03 2000-01-21 Fujitsu Ltd 半導体装置
JP2000101045A (ja) * 1998-07-23 2000-04-07 Mitsubishi Electric Corp 半導体装置
EP1560269A1 (de) * 2004-01-30 2005-08-03 Alcatel MOS-Kondensator in einer integrierten Halbleiterschaltung
JP2005259953A (ja) * 2004-03-11 2005-09-22 Toshiba Corp 半導体装置
KR20050030940A (ko) * 2005-03-09 2005-03-31 손은일 다층 알루미늄 라미네이트 튜브용 시트 및 그 제조 방법
JP2013149710A (ja) * 2012-01-18 2013-08-01 Fujitsu Ltd 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686557A (en) * 1980-09-19 1987-08-11 Siemens Aktiengesellschaft Semiconductor element and method for producing the same
US4887135A (en) * 1982-02-09 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Dual level polysilicon single transistor-capacitor memory array
US4805071A (en) * 1987-11-30 1989-02-14 Texas Instruments Incorporated High voltage capacitor for integrated circuits
US4933739A (en) * 1988-04-26 1990-06-12 Eliyahou Harari Trench resistor structures for compact semiconductor memory and logic devices

Also Published As

Publication number Publication date
KR100221440B1 (ko) 1999-09-15
DE69026675T2 (de) 1996-11-28
JPH03133170A (ja) 1991-06-06
EP0423791A1 (de) 1991-04-24
KR910008844A (ko) 1991-05-31
EP0423791B1 (de) 1996-04-24
JP3038731B2 (ja) 2000-05-08
US5055905A (en) 1991-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee