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DE69014896D1 - Verbindungsbrücke für kerndrähte für apparate zur herstellung polykristallinen siliziums. - Google Patents

Verbindungsbrücke für kerndrähte für apparate zur herstellung polykristallinen siliziums.

Info

Publication number
DE69014896D1
DE69014896D1 DE69014896T DE69014896T DE69014896D1 DE 69014896 D1 DE69014896 D1 DE 69014896D1 DE 69014896 T DE69014896 T DE 69014896T DE 69014896 T DE69014896 T DE 69014896T DE 69014896 D1 DE69014896 D1 DE 69014896D1
Authority
DE
Germany
Prior art keywords
production
polycrystalline silicon
core wire
connecting bridge
bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69014896T
Other languages
English (en)
Other versions
DE69014896T2 (de
Inventor
Minoru Ohtsuki
Yusuke Miyamoto
Kenichi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Sumco Techxiv Corp
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp, Komatsu Electronic Metals Co Ltd filed Critical Sumco Techxiv Corp
Application granted granted Critical
Publication of DE69014896D1 publication Critical patent/DE69014896D1/de
Publication of DE69014896T2 publication Critical patent/DE69014896T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE69014896T 1989-11-04 1990-10-25 Verbindungsbrücke für kerndrähte für apparate zur herstellung polykristallinen siliziums. Expired - Fee Related DE69014896T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1286040A JPH0729874B2 (ja) 1989-11-04 1989-11-04 多結晶シリコン製造装置の芯線間接続用ブリッジ
PCT/JP1990/001373 WO1991006507A1 (fr) 1989-11-04 1990-10-25 Pont connecteur de conducteurs centraux destine aux appareils de fabrication de silicium polycristallin

Publications (2)

Publication Number Publication Date
DE69014896D1 true DE69014896D1 (de) 1995-01-19
DE69014896T2 DE69014896T2 (de) 1995-05-11

Family

ID=17699193

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69014896T Expired - Fee Related DE69014896T2 (de) 1989-11-04 1990-10-25 Verbindungsbrücke für kerndrähte für apparate zur herstellung polykristallinen siliziums.

Country Status (5)

Country Link
US (1) US5327454A (de)
EP (1) EP0498887B1 (de)
JP (1) JPH0729874B2 (de)
DE (1) DE69014896T2 (de)
WO (1) WO1991006507A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1772429A4 (de) 2004-06-22 2010-01-06 Shin Etsu Film Co Ltd Verfahren zur herstellung von polykristallinem silicium und nach dem verfahren hergestelltes polykristallines silicium für solarzellen
US7922814B2 (en) * 2005-11-29 2011-04-12 Chisso Corporation Production process for high purity polycrystal silicon and production apparatus for the same
KR100768147B1 (ko) 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
JP5012386B2 (ja) * 2007-10-04 2012-08-29 三菱マテリアル株式会社 多結晶シリコンロッドの製造方法
JP5012385B2 (ja) * 2007-10-04 2012-08-29 三菱マテリアル株式会社 多結晶シリコンロッドの製造方法
JP5309963B2 (ja) 2007-12-28 2013-10-09 三菱マテリアル株式会社 多結晶シリコンのシリコン芯棒組立体及びその製造方法、多結晶シリコン製造装置、多結晶シリコン製造方法
WO2009120859A1 (en) * 2008-03-26 2009-10-01 Gt Solar, Inc. Gold-coated polysilicon reactor system and method
RU2499081C2 (ru) * 2008-03-26 2013-11-20 ДжиТиЭйТи Корпорейшн Системы и способы распределения газа в реакторе для химического осаждения из паровой фазы
KR101543010B1 (ko) * 2008-06-23 2015-08-07 지티에이티 코포레이션 화학적 기상 증착 반응기에서 튜브 필라멘트들에 대한 척 연결점 및 브릿지 연결점
CN101570890B (zh) * 2009-01-06 2011-09-28 刘朝轩 可有效提高接触面积和减小电阻的孔式硅芯搭接方法
CN101477897B (zh) 2009-01-20 2012-05-23 宁夏东方钽业股份有限公司 钽电容器阳极引线用钽丝及其制造方法
EP2402287B1 (de) * 2009-02-27 2018-10-17 Tokuyama Corporation Stab aus polykristallinem silizium und vorrichtung zu seiner herstellung
CN101966991B (zh) * 2010-10-20 2012-07-18 上海森松压力容器有限公司 多晶硅生产装置
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
CN107777689A (zh) * 2017-12-12 2018-03-09 江西赛维Ldk光伏硅科技有限公司 一种多晶硅及其制备方法
CN108017059A (zh) * 2017-12-12 2018-05-11 江西赛维Ldk光伏硅科技有限公司 用于制备多晶硅的热载体和多晶硅反应炉

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* Cited by examiner, † Cited by third party
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US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
JPS3925899B1 (de) * 1962-06-14 1964-11-16
BE666629A (de) * 1964-08-04
DE1261842B (de) * 1964-12-12 1968-02-29 Siemens Ag Verfahren zum Herstellen von hochreinem Silicium
US3930067A (en) * 1966-04-16 1975-12-30 Philips Corp Method of providing polycrystalline layers of elementtary substances on substrates
BE806098A (fr) * 1973-03-28 1974-02-01 Siemens Ag Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes
SU602133A3 (ru) * 1973-12-21 1978-04-05 Электрошмельцверк Кемптен Гмбх (Фирма) Печна установка периодического действи
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
JPS5312358A (en) * 1976-07-20 1978-02-03 Tamura Shokai Kk Automatic quantitative measuring method for granular solid
JPS5523457A (en) * 1978-08-08 1980-02-19 Kawasaki Heavy Ind Ltd Air cleaning device in tritium handling facility
US4237151A (en) * 1979-06-26 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Thermal decomposition of silane to form hydrogenated amorphous Si film
US4500402A (en) * 1982-04-29 1985-02-19 Olin Corporation Reference electrode
JPS5928561U (ja) * 1982-08-16 1984-02-22 株式会社トクヤマ シリコン析出用ｕ字形担体
JPS6041036B2 (ja) * 1982-08-27 1985-09-13 財団法人 半導体研究振興会 ＧａＡｓ浮遊帯融解草結晶製造装置
FR2546912B1 (fr) * 1983-06-06 1987-07-10 Commissariat Energie Atomique Procede et dispositif d'elaboration d'un monocristal
JPS61214427A (ja) * 1985-03-19 1986-09-24 Nippon Gakki Seizo Kk 半導体装置の電極形成法
CA1315572C (en) * 1986-05-13 1993-04-06 Xuan Nguyen-Dinh Phase stable single crystal materials
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
US5102745A (en) * 1989-11-13 1992-04-07 Auburn University Mixed fiber composite structures
JP3925899B2 (ja) * 2000-08-24 2007-06-06 株式会社リコー トナー及びトナーの製造方法

Also Published As

Publication number Publication date
DE69014896T2 (de) 1995-05-11
EP0498887A4 (en) 1993-01-27
EP0498887B1 (de) 1994-12-07
EP0498887A1 (de) 1992-08-19
JPH0729874B2 (ja) 1995-04-05
WO1991006507A1 (fr) 1991-05-16
US5327454A (en) 1994-07-05
JPH03150298A (ja) 1991-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee