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DE69005938D1 - Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht. - Google Patents

Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht.

Info

Publication number
DE69005938D1
DE69005938D1 DE90114140T DE69005938T DE69005938D1 DE 69005938 D1 DE69005938 D1 DE 69005938D1 DE 90114140 T DE90114140 T DE 90114140T DE 69005938 T DE69005938 T DE 69005938T DE 69005938 D1 DE69005938 D1 DE 69005938D1
Authority
DE
Germany
Prior art keywords
producing
carbon layer
thin diamond
diamond
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90114140T
Other languages
English (en)
Other versions
DE69005938T2 (de
Inventor
Tsutomu Mitani
Hirokazu Nakaue
Hideo Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1198986A external-priority patent/JPH0364467A/ja
Priority claimed from JP1300503A external-priority patent/JPH03162580A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69005938D1 publication Critical patent/DE69005938D1/de
Publication of DE69005938T2 publication Critical patent/DE69005938T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/338—Changing chemical properties of treated surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/339—Synthesising components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/103—Diamond-like carbon coating, i.e. DLC
    • Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69005938T 1989-07-31 1990-07-24 Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht. Expired - Fee Related DE69005938T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1198986A JPH0364467A (ja) 1989-07-31 1989-07-31 炭素膜の合成方法及び合成装置
JP1300503A JPH03162580A (ja) 1989-11-17 1989-11-17 薄膜合成装置

Publications (2)

Publication Number Publication Date
DE69005938D1 true DE69005938D1 (de) 1994-02-24
DE69005938T2 DE69005938T2 (de) 1994-05-19

Family

ID=26511280

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69005938T Expired - Fee Related DE69005938T2 (de) 1989-07-31 1990-07-24 Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht.

Country Status (3)

Country Link
US (2) US5203924A (de)
EP (1) EP0411435B1 (de)
DE (1) DE69005938T2 (de)

Families Citing this family (42)

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DE69312989T2 (de) * 1992-03-13 1997-12-18 Matsushita Electric Ind Co Ltd Plasma-CVD-Anlage und entsprechendes Verfahren
GB2269105B (en) * 1992-07-28 1996-05-08 Dr Joseph Franks Instrument tip for dental filling instrument
FR2695944B1 (fr) * 1992-09-24 1994-11-18 Onera (Off Nat Aerospatiale) Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes.
US6001432A (en) * 1992-11-19 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Apparatus for forming films on a substrate
US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US6001431A (en) * 1992-12-28 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a magnetic recording medium
US5470661A (en) * 1993-01-07 1995-11-28 International Business Machines Corporation Diamond-like carbon films from a hydrocarbon helium plasma
US5837081A (en) * 1993-04-07 1998-11-17 Applied Sciences, Inc. Method for making a carbon-carbon composite
US5389400A (en) * 1993-04-07 1995-02-14 Applied Sciences, Inc. Method for making a diamond/carbon/carbon composite useful as an integral dielectric heat sink
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5560779A (en) * 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
US6183816B1 (en) 1993-07-20 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the coating
US5472509A (en) * 1993-11-30 1995-12-05 Neomecs Incorporated Gas plasma apparatus with movable film liners
US5508368A (en) * 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
GB9405029D0 (en) * 1994-03-15 1994-04-27 Franks Joseph Dr Improved catheters and other tubular inserts
JP3175894B2 (ja) * 1994-03-25 2001-06-11 株式会社半導体エネルギー研究所 プラズマ処理装置及びプラズマ処理方法
US5679167A (en) * 1994-08-18 1997-10-21 Sulzer Metco Ag Plasma gun apparatus for forming dense, uniform coatings on large substrates
US5888594A (en) * 1996-11-05 1999-03-30 Minnesota Mining And Manufacturing Company Process for depositing a carbon-rich coating on a moving substrate
US5948166A (en) * 1996-11-05 1999-09-07 3M Innovative Properties Company Process and apparatus for depositing a carbon-rich coating on a moving substrate
US6077572A (en) * 1997-06-18 2000-06-20 Northeastern University Method of coating edges with diamond-like carbon
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
JP2002194547A (ja) * 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
EP1193555A1 (de) 2000-08-31 2002-04-03 Fuji Photo Film Co., Ltd. Negativ arbeitende Resistzusammensetzung
KR20020037995A (ko) * 2000-11-16 2002-05-23 구자홍 플라즈마 중합 처리장치의 전극 구조
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US7125587B2 (en) * 2002-05-20 2006-10-24 Varian Semiconductor Equipment Associates Inc. Ion beam for enhancing optical properties of materials
JP4052191B2 (ja) * 2003-06-24 2008-02-27 株式会社島津製作所 複合成膜装置およびこれを用いた磁気ヘッドの保護膜形成方法
US7064078B2 (en) * 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
JP4879159B2 (ja) * 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
US7638440B2 (en) * 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
US20050199585A1 (en) * 2004-03-12 2005-09-15 Applied Materials, Inc. Method of depositing an amorphous carbon film for metal etch hardmask application
US7079740B2 (en) * 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
US20070286965A1 (en) * 2006-06-08 2007-12-13 Martin Jay Seamons Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon
US7094442B2 (en) * 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
DE102005049266B4 (de) * 2005-10-14 2007-12-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Plasmabehandlung von Objekten
US20070286954A1 (en) * 2006-06-13 2007-12-13 Applied Materials, Inc. Methods for low temperature deposition of an amorphous carbon layer
DE102007063380A1 (de) * 2007-12-20 2009-06-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsvorrichtung zur Beschichtung eines Substrates bei Atmosphärenbedingungen
JP5574165B2 (ja) * 2010-05-31 2014-08-20 株式会社ジェイテクト 被覆部材の製造方法
JP2012038965A (ja) * 2010-08-09 2012-02-23 Lapis Semiconductor Co Ltd 半導体装置及びその製造方法
JP5649510B2 (ja) * 2010-08-19 2015-01-07 キヤノンアネルバ株式会社 プラズマ処理装置，成膜方法，ｄｌｃ皮膜を有する金属板の製造方法，セパレータの製造方法
DE102013107659B4 (de) * 2013-07-18 2015-03-12 W & L Coating Systems Gmbh Plasmachemische Beschichtungsvorrichtung

Family Cites Families (14)

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US4486286A (en) * 1982-09-28 1984-12-04 Nerken Research Corp. Method of depositing a carbon film on a substrate and products obtained thereby
US4645977A (en) * 1984-08-31 1987-02-24 Matsushita Electric Industrial Co., Ltd. Plasma CVD apparatus and method for forming a diamond like carbon film
US4663183A (en) * 1984-09-10 1987-05-05 Energy Conversion Devices, Inc. Glow discharge method of applying a carbon coating onto a substrate
EP0183254B1 (de) * 1984-11-29 1994-07-13 Matsushita Electric Industrial Co., Ltd. Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff
US4673589A (en) * 1986-02-18 1987-06-16 Amoco Corporation Photoconducting amorphous carbon
JPS62195744A (ja) * 1986-02-21 1987-08-28 Fuji Electric Co Ltd 光磁気記録媒体
KR900005118B1 (ko) * 1986-07-14 1990-07-19 미쓰비시전기주식회사 박막 형성장치
US4913929A (en) * 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
JP2610469B2 (ja) * 1988-02-26 1997-05-14 株式会社 半導体エネルギー研究所 炭素または炭素を主成分とする被膜を形成する方法
JPH01239919A (ja) * 1988-03-22 1989-09-25 Semiconductor Energy Lab Co Ltd プラズマ処理方法およびプラズマ処理装置
US4883686A (en) * 1988-05-26 1989-11-28 Energy Conversion Devices, Inc. Method for the high rate plasma deposition of high quality material
US5023109A (en) * 1989-09-06 1991-06-11 General Atomics Deposition of synthetic diamonds
US5091208A (en) * 1990-03-05 1992-02-25 Wayne State University Novel susceptor for use in chemical vapor deposition apparatus and its method of use
US5169452A (en) * 1990-05-14 1992-12-08 Tdk Corporation Apparatus for the synthesis of diamond-like thin films

Also Published As

Publication number Publication date
US5203924A (en) 1993-04-20
DE69005938T2 (de) 1994-05-19
EP0411435B1 (de) 1994-01-12
US5674573A (en) 1997-10-07
EP0411435A1 (de) 1991-02-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee