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DE68917941D1 - Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls. - Google Patents

Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls.

Info

Publication number
DE68917941D1
DE68917941D1 DE68917941T DE68917941T DE68917941D1 DE 68917941 D1 DE68917941 D1 DE 68917941D1 DE 68917941 T DE68917941 T DE 68917941T DE 68917941 T DE68917941 T DE 68917941T DE 68917941 D1 DE68917941 D1 DE 68917941D1
Authority
DE
Germany
Prior art keywords
alxga1
crystal
growing
light emitting
visible light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917941T
Other languages
English (en)
Other versions
DE68917941T2 (de
Inventor
Akiko C O Nec Corporatio Gomyo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE68917941D1 publication Critical patent/DE68917941D1/de
Publication of DE68917941T2 publication Critical patent/DE68917941T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE68917941T 1988-01-20 1989-01-20 Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls. Expired - Fee Related DE68917941T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1112888 1988-01-20

Publications (2)

Publication Number Publication Date
DE68917941D1 true DE68917941D1 (de) 1994-10-13
DE68917941T2 DE68917941T2 (de) 1995-04-20

Family

ID=11769380

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917941T Expired - Fee Related DE68917941T2 (de) 1988-01-20 1989-01-20 Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls.

Country Status (4)

Country Link
US (1) US4974231A (de)
EP (1) EP0325275B1 (de)
JP (1) JP2555881B2 (de)
DE (1) DE68917941T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264389A (en) * 1988-09-29 1993-11-23 Sanyo Electric Co., Ltd. Method of manufacturing a semiconductor laser device
US5146466A (en) * 1988-09-29 1992-09-08 Sanyo Electric Co., Ltd. Semiconductor laser device
US5235194A (en) * 1989-09-28 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with InGaAlP
US5157679A (en) * 1989-10-11 1992-10-20 Hitachi-Ltd. Optoelectronic devices
US5278857A (en) * 1989-10-16 1994-01-11 Kabushiki Kaisha Toshiba Indium gallium aluminum phosphide silicon doped to prevent zinc disordering
US5124995A (en) * 1990-03-15 1992-06-23 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device
JP2553731B2 (ja) * 1990-04-13 1996-11-13 三菱電機株式会社 半導体光素子
NL9001193A (nl) * 1990-05-23 1991-12-16 Koninkl Philips Electronics Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
DE69104650T2 (de) * 1990-06-05 1995-03-30 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines Halbleiterlasers.
US5161167A (en) * 1990-06-21 1992-11-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light
JPH04144185A (ja) * 1990-10-04 1992-05-18 Mitsubishi Electric Corp 半導体レーザ装置
US5223723A (en) * 1990-10-19 1993-06-29 At&T Bell Laboratories Light emitting device
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
DE69201283T2 (de) * 1991-08-21 1995-09-28 Nippon Electric Co Halbleiterlaser.
EP0544357B1 (de) * 1991-11-26 1996-09-04 Koninklijke Philips Electronics N.V. Strahlung emittierende Halbleiterdiode
JPH05160515A (ja) * 1991-12-04 1993-06-25 Eastman Kodak Japan Kk 量子井戸型レーザダイオード
JPH05343790A (ja) * 1992-06-04 1993-12-24 Rohm Co Ltd 半導体レーザ装置およびその製法
DE69408755T2 (de) * 1993-09-03 1998-06-25 Mitsubishi Chem Corp Verfahren zum Herstellen eines III-V-Halbleitermaterials und ein III-V-Halbleitermaterial
JP2003332692A (ja) * 2002-05-13 2003-11-21 Fuji Photo Film Co Ltd 半導体レーザ素子
US20040001521A1 (en) * 2002-06-27 2004-01-01 Ashish Tandon Laser having active region formed above substrate
JP2005236024A (ja) * 2004-02-19 2005-09-02 Fuji Photo Film Co Ltd 半導体レーザ素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1378128A (en) * 1973-06-26 1974-12-18 Alferov Z I Semiconductor laser
JPS5511310A (en) * 1978-07-10 1980-01-26 Hitachi Ltd Semiconductor laser element
JPS5637687A (en) * 1979-09-04 1981-04-11 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPH0196982A (ja) * 1987-10-08 1989-04-14 Sharp Corp 半導体レーザ素子
JP2674043B2 (ja) * 1987-12-11 1997-11-05 ソニー株式会社 エピタキシャル成長法

Also Published As

Publication number Publication date
EP0325275B1 (de) 1994-09-07
US4974231A (en) 1990-11-27
EP0325275A3 (en) 1990-06-20
EP0325275A2 (de) 1989-07-26
JPH01282197A (ja) 1989-11-14
DE68917941T2 (de) 1995-04-20
JP2555881B2 (ja) 1996-11-20

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8339 Ceased/non-payment of the annual fee