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DE68903008D1 - Verfahren zur ziehung eines halbleiter-kristalls. - Google Patents

Verfahren zur ziehung eines halbleiter-kristalls.

Info

Publication number
DE68903008D1
DE68903008D1 DE8989103115T DE68903008T DE68903008D1 DE 68903008 D1 DE68903008 D1 DE 68903008D1 DE 8989103115 T DE8989103115 T DE 8989103115T DE 68903008 T DE68903008 T DE 68903008T DE 68903008 D1 DE68903008 D1 DE 68903008D1
Authority
DE
Germany
Prior art keywords
semiconductor crystal
crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8989103115T
Other languages
English (en)
Other versions
DE68903008T2 (de
Inventor
Youji C O Patent Div Yamashita
Masakatu C O Patent Div Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68903008D1 publication Critical patent/DE68903008D1/de
Publication of DE68903008T2 publication Critical patent/DE68903008T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8989103115T 1988-02-25 1989-02-22 Verfahren zur ziehung eines halbleiter-kristalls. Expired - Fee Related DE68903008T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63042583A JPH085740B2 (ja) 1988-02-25 1988-02-25 半導体の結晶引上げ方法

Publications (2)

Publication Number Publication Date
DE68903008D1 true DE68903008D1 (de) 1992-11-05
DE68903008T2 DE68903008T2 (de) 1993-04-22

Family

ID=12640091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989103115T Expired - Fee Related DE68903008T2 (de) 1988-02-25 1989-02-22 Verfahren zur ziehung eines halbleiter-kristalls.

Country Status (5)

Country Link
US (1) US5073229A (de)
EP (1) EP0330189B1 (de)
JP (1) JPH085740B2 (de)
KR (1) KR920009564B1 (de)
DE (1) DE68903008T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
DE69428302T2 (de) * 1993-03-29 2002-07-04 Kabushiki Kaisha Toshiba, Kawasaki Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird.
JP3015656B2 (ja) * 1994-03-23 2000-03-06 株式会社東芝 半絶縁性ＧａＡｓ単結晶の製造方法および製造装置
JP3484870B2 (ja) * 1996-03-27 2004-01-06 信越半導体株式会社 連続チャージ法によるシリコン単結晶の製造方法およびドーパント供給装置
KR100485151B1 (ko) * 2002-08-26 2005-04-22 주식회사 실트론 실리콘 단결정 성장 장치
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
JP4760729B2 (ja) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
FR2940806B1 (fr) * 2009-01-05 2011-04-08 Commissariat Energie Atomique Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation
PH12013502255A1 (en) * 2011-05-06 2014-01-13 Gtat Ip Holding Llc Growth of a uniformly doped silicon ingot by doping only the initial charge
US9863062B2 (en) 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods
US9822466B2 (en) 2013-11-22 2017-11-21 Corner Star Limited Crystal growing systems and crucibles for enhancing heat transfer to a melt
CN108138354B (zh) * 2015-05-01 2021-05-28 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR66315E (fr) * 1906-09-03 1956-06-29 Int Standard Electric Corp Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux
GB760778A (en) * 1953-07-23 1956-11-07 Telefunken Gmbh Improvements in or relating to the manufacture of single crystals
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
DE2152801A1 (de) * 1970-11-09 1972-05-10 Little Inc A Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren
US4352784A (en) * 1979-05-25 1982-10-05 Western Electric Company, Inc. Double crucible Czochralski crystal growth apparatus
US4246064A (en) * 1979-07-02 1981-01-20 Western Electric Company, Inc. Double crucible crystal growing process
JPS6126591A (ja) * 1984-07-18 1986-02-05 Fujitsu Ltd 結晶成長方法
JPS6270291A (ja) * 1985-09-19 1987-03-31 Toshiba Corp ＧａＡｓ単結晶の製造方法及び装置
JPS62226890A (ja) * 1986-03-27 1987-10-05 Komatsu Denshi Kinzoku Kk 単結晶及びその製造方法
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置

Also Published As

Publication number Publication date
DE68903008T2 (de) 1993-04-22
EP0330189A2 (de) 1989-08-30
JPH01215789A (ja) 1989-08-29
EP0330189B1 (de) 1992-09-30
KR890012893A (ko) 1989-09-20
EP0330189A3 (en) 1989-10-25
KR920009564B1 (ko) 1992-10-19
US5073229A (en) 1991-12-17
JPH085740B2 (ja) 1996-01-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee