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DE60321734D1 - Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens - Google Patents

Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens

Info

Publication number
DE60321734D1
DE60321734D1 DE60321734T DE60321734T DE60321734D1 DE 60321734 D1 DE60321734 D1 DE 60321734D1 DE 60321734 T DE60321734 T DE 60321734T DE 60321734 T DE60321734 T DE 60321734T DE 60321734 D1 DE60321734 D1 DE 60321734D1
Authority
DE
Germany
Prior art keywords
soi
preparation
carrying
silicon carbide
insulator substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60321734T
Other languages
English (en)
Inventor
Katsutoshi Izumi
Motoi Nakao
Yoshiaki Ohbayashi
Keiji Mine
Seisaku Hirai
Fumihiko Jobe
Tomoyuki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Metropolitan University
Original Assignee
Osaka Municipal Government
Hosiden Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Municipal Government, Hosiden Corp filed Critical Osaka Municipal Government
Application granted granted Critical
Publication of DE60321734D1 publication Critical patent/DE60321734D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q50/00—Information and communication technology [ICT] specially adapted for implementation of business processes of specific business sectors, e.g. utilities or tourism
    • G06Q50/10—Services
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q30/00—Commerce
    • G06Q30/06—Buying, selling or leasing transactions
    • G06Q30/0601—Electronic shopping [e-shopping]
    • G06Q30/0613—Third-party assisted
    • G06Q30/0619—Neutral agent
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16H—HEALTHCARE INFORMATICS, i.e. INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR THE HANDLING OR PROCESSING OF MEDICAL OR HEALTHCARE DATA
    • G16H20/00—ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance
    • G16H20/30—ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance relating to physical therapies or activities, e.g. physiotherapy, acupressure or exercising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Business, Economics & Management (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Primary Health Care (AREA)
  • Strategic Management (AREA)
  • General Business, Economics & Management (AREA)
  • Economics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Finance (AREA)
  • Tourism & Hospitality (AREA)
  • Accounting & Taxation (AREA)
  • General Health & Medical Sciences (AREA)
  • Marketing (AREA)
  • Human Resources & Organizations (AREA)
  • Development Economics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Physical Education & Sports Medicine (AREA)
  • Epidemiology (AREA)
  • Medical Informatics (AREA)
  • Public Health (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60321734T 2002-01-31 2003-01-30 Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens Expired - Lifetime DE60321734D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002022631A JP3920103B2 (ja) 2002-01-31 2002-01-31 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置

Publications (1)

Publication Number Publication Date
DE60321734D1 true DE60321734D1 (de) 2008-08-07

Family

ID=19192223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60321734T Expired - Lifetime DE60321734D1 (de) 2002-01-31 2003-01-30 Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens

Country Status (7)

Country Link
US (2) US7084049B2 (de)
EP (1) EP1333482B1 (de)
JP (1) JP3920103B2 (de)
KR (1) KR100777544B1 (de)
CN (1) CN100343962C (de)
DE (1) DE60321734D1 (de)
TW (1) TWI264070B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280354A (ja) * 2001-03-19 2002-09-27 Osaka Prefecture 炭素薄膜のエッチング方法及びエッチング装置
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US20070231485A1 (en) * 2003-09-05 2007-10-04 Moffat William A Silane process chamber with double door seal
US7382023B2 (en) 2004-04-28 2008-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fully depleted SOI multiple threshold voltage application
JP2005317801A (ja) * 2004-04-28 2005-11-10 Japan Science & Technology Agency 薄膜素子形成法
JP4690734B2 (ja) * 2005-01-28 2011-06-01 エア・ウォーター株式会社 単結晶ＳｉＣ基板の製造方法
JP4511378B2 (ja) * 2005-02-15 2010-07-28 エア・ウォーター株式会社 ＳＯＩ基板を用いた単結晶ＳｉＣ層を形成する方法
JP4563918B2 (ja) * 2005-10-31 2010-10-20 エア・ウォーター株式会社 単結晶ＳｉＣ基板の製造方法
CN100514562C (zh) * 2006-09-18 2009-07-15 中国科学院半导体研究所 用于MEMS器件的大面积3C-SiC薄膜的制备方法
WO2008111277A1 (ja) * 2007-03-15 2008-09-18 Kyushu Institute Of Technology 単結晶酸化亜鉛基板
JP5394632B2 (ja) 2007-11-19 2014-01-22 エア・ウォーター株式会社 単結晶ＳｉＣ基板の製造方法
JP2009158702A (ja) * 2007-12-26 2009-07-16 Kyushu Institute Of Technology 発光デバイス
KR20100129738A (ko) * 2008-03-10 2010-12-09 고쿠리츠다이가쿠호진 도호쿠다이가쿠 그라펜 또는 그래파이트 박막, 그 제조방법, 박막구조 및 전자 디바이스
JP2011243640A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
JP5585268B2 (ja) 2010-07-22 2014-09-10 セイコーエプソン株式会社 単結晶炭化珪素膜付き基材及び単結晶炭化珪素膜の製造方法並びに単結晶炭化珪素膜付き基材の製造方法
CN102965733B (zh) * 2012-11-02 2015-11-18 中国科学院物理研究所 一种无石墨包裹物的导电碳化硅晶体生长工艺
JP6111678B2 (ja) * 2013-01-17 2017-04-12 信越半導体株式会社 ＧｅＯＩウェーハの製造方法
JP6136731B2 (ja) * 2013-08-06 2017-05-31 住友電気工業株式会社 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法
MD4280C1 (ro) * 2013-09-04 2014-10-31 Государственный Университет Молд0 Procedeu de creştere a structurii pInP-nCdS
JPWO2016047534A1 (ja) * 2014-09-24 2017-07-27 エア・ウォーター株式会社 ＳｉＣ層を備えた半導体装置
RU2578104C1 (ru) * 2015-04-07 2016-03-20 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) Способ газофазной карбидизации поверхности монокристаллического кремния ориентации (111), (100)
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS

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US4664944A (en) * 1986-01-31 1987-05-12 The United States Of America As Represented By The United States Department Of Energy Deposition method for producing silicon carbide high-temperature semiconductors
JP2962851B2 (ja) * 1990-04-26 1999-10-12 キヤノン株式会社 光受容部材
JPH06191997A (ja) * 1992-10-07 1994-07-12 Kyushu Kogyo Univ ＳｉＣ結晶膜の形成法
US5415126A (en) 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
DE19514079A1 (de) * 1995-04-13 1996-10-17 Siemens Ag Verfahren zum Passivieren einer Siliciumcarbid-Oberfläche gegenüber Sauerstoff
US5759908A (en) * 1995-05-16 1998-06-02 University Of Cincinnati Method for forming SiC-SOI structures
US5880491A (en) * 1997-01-31 1999-03-09 The United States Of America As Represented By The Secretary Of The Air Force SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices
JP2002363751A (ja) 2001-06-06 2002-12-18 Osaka Prefecture 単結晶炭化シリコン薄膜の製造方法及びその製造装置

Also Published As

Publication number Publication date
EP1333482A2 (de) 2003-08-06
CN100343962C (zh) 2007-10-17
US20040173154A1 (en) 2004-09-09
CN1435866A (zh) 2003-08-13
KR20030065326A (ko) 2003-08-06
TW200306627A (en) 2003-11-16
JP2003224248A (ja) 2003-08-08
TWI264070B (en) 2006-10-11
US7128788B2 (en) 2006-10-31
US20030148586A1 (en) 2003-08-07
EP1333482A3 (de) 2006-02-01
JP3920103B2 (ja) 2007-05-30
US7084049B2 (en) 2006-08-01
EP1333482B1 (de) 2008-06-25
KR100777544B1 (ko) 2007-11-20

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Owner name: OSAKA PREFECTURE UNIVERSITY PUBLIC CORP., SAKA, JP