[go: up one dir, main page]

DE60216046D1 - Halbleiterstruktur - Google Patents

Halbleiterstruktur

Info

Publication number
DE60216046D1
DE60216046D1 DE60216046T DE60216046T DE60216046D1 DE 60216046 D1 DE60216046 D1 DE 60216046D1 DE 60216046 T DE60216046 T DE 60216046T DE 60216046 T DE60216046 T DE 60216046T DE 60216046 D1 DE60216046 D1 DE 60216046D1
Authority
DE
Germany
Prior art keywords
semiconductor structure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60216046T
Other languages
English (en)
Inventor
Jeff Raynor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Application granted granted Critical
Publication of DE60216046D1 publication Critical patent/DE60216046D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
DE60216046T 2002-04-18 2002-04-18 Halbleiterstruktur Expired - Lifetime DE60216046D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02252751A EP1355360B1 (de) 2002-04-18 2002-04-18 Halbleiterstruktur

Publications (1)

Publication Number Publication Date
DE60216046D1 true DE60216046D1 (de) 2006-12-28

Family

ID=28459584

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60216046T Expired - Lifetime DE60216046D1 (de) 2002-04-18 2002-04-18 Halbleiterstruktur

Country Status (3)

Country Link
US (1) US6998659B2 (de)
EP (1) EP1355360B1 (de)
DE (1) DE60216046D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004025681D1 (de) * 2004-06-15 2010-04-08 St Microelectronics Res & Dev Bildsensor
US7439561B2 (en) 2005-08-08 2008-10-21 International Business Machines Corporation Pixel sensor cell for collecting electrons and holes
US8039875B2 (en) 2005-08-08 2011-10-18 International Business Machines Corporation Structure for pixel sensor cell that collects electrons and holes
EP2307130A1 (de) * 2008-06-27 2011-04-13 STMicroelectronics (Research & Development) Limited Pixelvorrichtung für die biologische analyse, cmos-biosensor und entsprechende herstellungsverfahren
US9105548B2 (en) * 2011-06-22 2015-08-11 California Institute Of Technology Sparsely-bonded CMOS hybrid imager
US9818777B2 (en) 2015-11-12 2017-11-14 Stmicroelectronics (Research & Development) Limited Hybrid analog-digital pixel implemented in a stacked configuration
US10418402B2 (en) * 2017-11-30 2019-09-17 Stmicroelectronics (Research & Development) Limited Near ultraviolet photocell
EP3839930A1 (de) 2019-12-19 2021-06-23 STMicroelectronics (Research & Development) Limited Verfahren und vorrichtung zur umgebungslichtmessung
EP4080874B1 (de) 2021-04-23 2024-12-04 STMicroelectronics (Research & Development) Limited Lichtsensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61265866A (ja) * 1985-05-20 1986-11-25 Sharp Corp 回路内蔵受光素子
JPH0730144A (ja) * 1993-06-28 1995-01-31 Xerox Corp イメージセンサ配列用低容量感光素子
JPH09199752A (ja) * 1996-01-22 1997-07-31 Canon Inc 光電変換装置及び画像読取装置
JP3359258B2 (ja) * 1997-05-30 2002-12-24 キヤノン株式会社 光電変換装置及びそれを用いたイメージセンサ、画像読取装置
JP3592037B2 (ja) * 1997-05-30 2004-11-24 キヤノン株式会社 光電変換装置
US5898196A (en) * 1997-10-10 1999-04-27 International Business Machines Corporation Dual EPI active pixel cell design and method of making the same
GB2339333B (en) * 1998-06-29 2003-07-09 Hyundai Electronics Ind Photodiode having charge function and image sensor using the same

Also Published As

Publication number Publication date
US6998659B2 (en) 2006-02-14
US20030218195A1 (en) 2003-11-27
EP1355360B1 (de) 2006-11-15
EP1355360A1 (de) 2003-10-22

Similar Documents

Publication Publication Date Title
DE60331799D1 (de) Halbleitervorrichtung
DE60222947D1 (de) Halbleiterspeicher
DK1569712T3 (da) Forbindelsesindretning
DE60317905D1 (de) Halbleiterbauelement
ATE457980T1 (de) Aryloxime
ATE534648T1 (de) C-6-modifizierte indazolylpyrrolotriazine
DE602004028430D1 (de) Halbleiter
ATE427876T1 (de) Luftkissenboot
ATE318817T1 (de) Aza-arylpiperazine
DE60324962D1 (de) Halbleiterlaseranordnung
DE10238843B8 (de) Halbleiterbauelement
ATE349458T1 (de) Etonogestrelester
DE60317381D1 (de) Halbleiterspeicher
DE60336787D1 (de) Halbleiterspeicher
DE60314962D1 (de) Halbleiterschaltkreis
ATA1572002A (de) Managementspleisskassette
DE60327718D1 (de) Halbleiterbauelement
DE60216046D1 (de) Halbleiterstruktur
DE60323585D1 (de) Seilzugeinstellseinrichtung
ATA4142004A (de) Trägerverbau
ATE469773T1 (de) Zugöse
DE60327115D1 (de) Halbleiterbauelement
ATA19152002A (de) Hubkupplung
DE60322459D1 (de) Halbleitervorrichtung
DE60225416D1 (de) Halbleiterspeicher

Legal Events

Date Code Title Description
8332 No legal effect for de