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DE60144419D1 - Lichtemittierende Halbleitervorrichtung - Google Patents

Lichtemittierende Halbleitervorrichtung

Info

Publication number
DE60144419D1
DE60144419D1 DE60144419T DE60144419T DE60144419D1 DE 60144419 D1 DE60144419 D1 DE 60144419D1 DE 60144419 T DE60144419 T DE 60144419T DE 60144419 T DE60144419 T DE 60144419T DE 60144419 D1 DE60144419 D1 DE 60144419D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
emitting semiconductor
metal elements
nitride material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144419T
Other languages
English (en)
Inventor
Yuji Hori
Tomohiko Shibata
Osamu Oda
Mitsuhiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE60144419D1 publication Critical patent/DE60144419D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
DE60144419T 2000-12-28 2001-12-27 Lichtemittierende Halbleitervorrichtung Expired - Lifetime DE60144419D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000401418 2000-12-28
JP2001343055A JP3888668B2 (ja) 2000-12-28 2001-11-08 半導体発光素子

Publications (1)

Publication Number Publication Date
DE60144419D1 true DE60144419D1 (de) 2011-05-26

Family

ID=26607103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60144419T Expired - Lifetime DE60144419D1 (de) 2000-12-28 2001-12-27 Lichtemittierende Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US6677708B2 (de)
EP (1) EP1220334B1 (de)
JP (1) JP3888668B2 (de)
AT (1) ATE505817T1 (de)
DE (1) DE60144419D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4327339B2 (ja) * 2000-07-28 2009-09-09 独立行政法人物質・材料研究機構 半導体層形成用基板とそれを利用した半導体装置
JP4963763B2 (ja) * 2000-12-21 2012-06-27 日本碍子株式会社 半導体素子
JP2005136200A (ja) * 2003-10-30 2005-05-26 Univ Nagoya 窒化物半導体結晶層の作製方法、窒化物半導体結晶層、及び窒化物半導体結晶層作製用の基材
JP2005183947A (ja) * 2003-11-26 2005-07-07 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶およびｉｉｉ族窒化物半導体デバイスおよび発光デバイス
JP2011082528A (ja) * 2003-11-26 2011-04-21 Ricoh Co Ltd 半導体発光素子
JP2006206343A (ja) * 2005-01-25 2006-08-10 Ngk Insulators Ltd ＡｌＮ単結晶の表面平坦化方法およびＡｌＮ単結晶基板の作製方法
KR100770440B1 (ko) * 2006-08-29 2007-10-26 삼성전기주식회사 질화물 반도체 발광소자
JP2009123718A (ja) * 2007-01-16 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
US7749785B2 (en) * 2007-05-02 2010-07-06 Showa Denko K.K. Manufacturing method of group III nitride semiconductor light-emitting device
WO2008144337A1 (en) * 2007-05-16 2008-11-27 Osram Sylvania Inc. Light emitting diode based on multiple double-heterostructures (quantum wells) with rare earth doped active regions
JPWO2008153130A1 (ja) * 2007-06-15 2010-08-26 ローム株式会社 窒化物半導体発光素子及び窒化物半導体の製造方法
JP2011049271A (ja) * 2009-08-26 2011-03-10 Sanken Electric Co Ltd 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2649936B2 (ja) * 1988-03-01 1997-09-03 富士通株式会社 歪超格子バッファ
JPH0964477A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
JP3209096B2 (ja) 1996-05-21 2001-09-17 豊田合成株式会社 ３族窒化物化合物半導体発光素子
JP4292600B2 (ja) 1998-09-11 2009-07-08 ソニー株式会社 ＧａＮ系半導体発光素子およびその製造方法
US6255669B1 (en) 1999-04-23 2001-07-03 The University Of Cincinnati Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element

Also Published As

Publication number Publication date
EP1220334B1 (de) 2011-04-13
EP1220334A3 (de) 2006-08-02
US6677708B2 (en) 2004-01-13
EP1220334A2 (de) 2002-07-03
JP3888668B2 (ja) 2007-03-07
US20020117961A1 (en) 2002-08-29
JP2002261324A (ja) 2002-09-13
ATE505817T1 (de) 2011-04-15

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