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DE60142211D1 - Graben - schottkygleichrichter - Google Patents

Graben - schottkygleichrichter

Info

Publication number
DE60142211D1
DE60142211D1 DE60142211T DE60142211T DE60142211D1 DE 60142211 D1 DE60142211 D1 DE 60142211D1 DE 60142211 T DE60142211 T DE 60142211T DE 60142211 T DE60142211 T DE 60142211T DE 60142211 D1 DE60142211 D1 DE 60142211D1
Authority
DE
Germany
Prior art keywords
scottky
rectifier
triangle
scottky rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142211T
Other languages
English (en)
Inventor
Erwin A Hijzen
Raymond J Hueting
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60142211D1 publication Critical patent/DE60142211D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
DE60142211T 2000-02-02 2001-01-22 Graben - schottkygleichrichter Expired - Lifetime DE60142211D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0002235.0A GB0002235D0 (en) 2000-02-02 2000-02-02 Trenched schottky rectifiers
PCT/EP2001/000657 WO2001057915A2 (en) 2000-02-02 2001-01-22 Trenched schottky rectifiers

Publications (1)

Publication Number Publication Date
DE60142211D1 true DE60142211D1 (de) 2010-07-08

Family

ID=9884704

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142211T Expired - Lifetime DE60142211D1 (de) 2000-02-02 2001-01-22 Graben - schottkygleichrichter

Country Status (6)

Country Link
US (1) US6441454B2 (de)
EP (1) EP1188189B1 (de)
JP (1) JP2003522413A (de)
DE (1) DE60142211D1 (de)
GB (1) GB0002235D0 (de)
WO (1) WO2001057915A2 (de)

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US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6396090B1 (en) * 2000-09-22 2002-05-28 Industrial Technology Research Institute Trench MOS device and termination structure
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6740951B2 (en) * 2001-05-22 2004-05-25 General Semiconductor, Inc. Two-mask trench schottky diode
DE10127885B4 (de) * 2001-06-08 2009-09-24 Infineon Technologies Ag Trench-Leistungshalbleiterbauelement
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
GB0129450D0 (en) * 2001-12-08 2002-01-30 Koninkl Philips Electronics Nv Trenched semiconductor devices and their manufacture
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
CA2482319A1 (en) * 2002-04-12 2003-10-23 Edscha Cabrio-Dachsysteme Gmbh Folding top for a cabriolet vehicle
US6855593B2 (en) * 2002-07-11 2005-02-15 International Rectifier Corporation Trench Schottky barrier diode
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) * 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6987305B2 (en) * 2003-08-04 2006-01-17 International Rectifier Corporation Integrated FET and schottky device
US7973381B2 (en) * 2003-09-08 2011-07-05 International Rectifier Corporation Thick field oxide termination for trench schottky device
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US6977208B2 (en) * 2004-01-27 2005-12-20 International Rectifier Corporation Schottky with thick trench bottom and termination oxide and process for manufacture
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
WO2006108011A2 (en) 2005-04-06 2006-10-12 Fairchild Semiconductor Corporation Trenched-gate field effect transistors and methods of forming the same
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP2008034572A (ja) * 2006-07-28 2008-02-14 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
US7750398B2 (en) * 2006-09-26 2010-07-06 Force-Mos Technology Corporation Trench MOSFET with trench termination and manufacture thereof
KR101630734B1 (ko) 2007-09-21 2016-06-16 페어차일드 세미컨덕터 코포레이션 전력 소자
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
JP2009253122A (ja) * 2008-04-09 2009-10-29 Nippon Telegr & Teleph Corp <Ntt> 整流素子
WO2010001338A1 (en) * 2008-07-01 2010-01-07 Nxp B.V. Manufacture of semiconductor devices
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
JP5566020B2 (ja) * 2008-12-22 2014-08-06 新電元工業株式会社 トレンチショットキバリアダイオードの製造方法
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP5450493B2 (ja) * 2011-03-25 2014-03-26 株式会社東芝 半導体装置
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
TWI503891B (zh) * 2011-12-06 2015-10-11 Tzu Hsiung Chen 溝渠式蕭基二極體及其製作方法
TWM435716U (en) * 2012-04-13 2012-08-11 Taiwan Semiconductor Co Ltd The active region of the trench distributed arrangement of the semiconductor device structure
TWM439885U (en) 2012-04-13 2012-10-21 Taiwan Semiconductor Co Ltd Semiconductor component trench structure
CN103426910B (zh) * 2012-05-24 2016-01-20 杰力科技股份有限公司 功率半导体元件及其边缘终端结构
TWI521693B (zh) * 2012-11-27 2016-02-11 財團法人工業技術研究院 蕭基能障二極體及其製造方法
EP2945192A1 (de) 2014-05-14 2015-11-18 Nxp B.V. Halbleiterbauelement und zugehöriges Herstellungsverfahren
US10431699B2 (en) 2015-03-06 2019-10-01 Semiconductor Components Industries, Llc Trench semiconductor device having multiple active trench depths and method
US9716187B2 (en) 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
JP6185504B2 (ja) * 2015-03-24 2017-08-23 京セラ株式会社 半導体装置
JP2017028150A (ja) * 2015-07-24 2017-02-02 サンケン電気株式会社 半導体装置
KR102249592B1 (ko) * 2015-12-02 2021-05-07 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
CN105576045B (zh) * 2016-01-28 2018-04-17 杭州立昂微电子股份有限公司 一种沟槽肖特基势垒二极管及其制造方法
CN107731933A (zh) * 2016-08-13 2018-02-23 朱江 一种沟槽终端肖特基器件
US10388801B1 (en) * 2018-01-30 2019-08-20 Semiconductor Components Industries, Llc Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
CN108493258A (zh) * 2018-05-28 2018-09-04 江苏捷捷微电子股份有限公司 一种超低正向压降的Trench肖特基器件及制造方法
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
JP6626929B1 (ja) 2018-06-29 2019-12-25 京セラ株式会社 半導体デバイス及び電気装置
US11894468B2 (en) * 2018-11-06 2024-02-06 Cornell University High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same
CN113054039A (zh) * 2020-11-27 2021-06-29 龙腾半导体股份有限公司 基于元胞结构的沟槽型肖特基二极管器件结构及制造方法
CN119364782A (zh) * 2024-12-24 2025-01-24 杭州立昂微电子股份有限公司 一种肖特基势垒二极管及其制造方法

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US4982260A (en) * 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US5262669A (en) * 1991-04-19 1993-11-16 Shindengen Electric Manufacturing Co., Ltd. Semiconductor rectifier having high breakdown voltage and high speed operation
US5326711A (en) * 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US5679966A (en) * 1995-10-05 1997-10-21 North Carolina State University Depleted base transistor with high forward voltage blocking capability
US5949124A (en) * 1995-10-31 1999-09-07 Motorola, Inc. Edge termination structure
US5612567A (en) 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure

Also Published As

Publication number Publication date
US20010010385A1 (en) 2001-08-02
US6441454B2 (en) 2002-08-27
GB0002235D0 (en) 2000-03-22
EP1188189B1 (de) 2010-05-26
JP2003522413A (ja) 2003-07-22
WO2001057915A3 (en) 2001-12-20
WO2001057915A2 (en) 2001-08-09
EP1188189A2 (de) 2002-03-20

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Legal Events

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8364 No opposition during term of opposition