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DE60137885D1 - Halogenplasma beständiger Teil und Herstellungsverfahren dafür - Google Patents

Halogenplasma beständiger Teil und Herstellungsverfahren dafür

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Publication number
DE60137885D1
DE60137885D1 DE60137885T DE60137885T DE60137885D1 DE 60137885 D1 DE60137885 D1 DE 60137885D1 DE 60137885 T DE60137885 T DE 60137885T DE 60137885 T DE60137885 T DE 60137885T DE 60137885 D1 DE60137885 D1 DE 60137885D1
Authority
DE
Germany
Prior art keywords
manufacturing process
resistant part
plasma resistant
halogen plasma
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60137885T
Other languages
English (en)
Inventor
Hirotake Yamada
Yuji Katsuda
Tsuneaki Ohashi
Masaaki Masuda
Masashi Harada
Hiroyuki Iwasaki
Shigenori Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000376151A external-priority patent/JP4540221B2/ja
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE60137885D1 publication Critical patent/DE60137885D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
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    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00Stock material or miscellaneous articles
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EP1892318B1 (de) 2011-07-13
US20020018921A1 (en) 2002-02-14
TW503449B (en) 2002-09-21
KR100429058B1 (ko) 2004-04-29
EP1158072A3 (de) 2004-01-07
EP1158072A2 (de) 2001-11-28
KR20010098643A (ko) 2001-11-08
EP1892318A1 (de) 2008-02-27
EP1158072B1 (de) 2009-03-11
US6783875B2 (en) 2004-08-31

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