DE60035580D1 - Halbleiter - Google Patents

Halbleiter

Info

Publication number: DE60035580D1
Authority: DE; Germany
Prior art keywords: semiconductor
Prior art date: 1999-04-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60035580T

Other languages

English (en)

Other versions

DE60035580T2 (de

Inventor

Masaharu Muramatsu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hamamatsu Photonics KK

Original Assignee

Hamamatsu Photonics KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-04-13

Filing date

2000-04-13

Publication date

2007-08-30

2000-04-13 Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK

2007-08-30 Application granted granted Critical

2007-08-30 Publication of DE60035580D1 publication Critical patent/DE60035580D1/de

2008-04-17 Publication of DE60035580T2 publication Critical patent/DE60035580T2/de

2020-04-14 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/159—Charge-coupled device [CCD] image sensors comprising a photoconductive layer deposited on the CCD structure
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes

DE60035580T 1999-04-13 2000-04-13 Halbleiter Expired - Lifetime DE60035580T2 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP10544299		1999-04-13
JP10544299		1999-04-13
PCT/JP2000/002424 WO2000062344A1 (en)	1999-04-13	2000-04-13	Semiconductor device

Publications (2)

Publication Number	Publication Date
DE60035580D1 true DE60035580D1 (de)	2007-08-30
DE60035580T2 DE60035580T2 (de)	2008-04-17

Family

ID=14407722

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60035580T Expired - Lifetime DE60035580T2 (de)	1999-04-13	2000-04-13	Halbleiter

Country Status (6)

Country	Link
US (1)	US6872992B2 (de)
EP (1)	EP1179851B1 (de)
JP (1)	JP4786035B2 (de)
AU (1)	AU3837200A (de)
DE (1)	DE60035580T2 (de)
WO (1)	WO2000062344A1 (de)

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Publication number	Priority date	Publication date	Assignee	Title
JP2004134578A (ja)	2002-10-10	2004-04-30	Hamamatsu Photonics Kk	光検出装置及びその製造方法
US20060055800A1 (en) *	2002-12-18	2006-03-16	Noble Device Technologies Corp.	Adaptive solid state image sensor
JP4494746B2 (ja) *	2003-09-25	2010-06-30	浜松ホトニクス株式会社	半導体装置
JP4494745B2 (ja) *	2003-09-25	2010-06-30	浜松ホトニクス株式会社	半導体装置
JP4351012B2 (ja) *	2003-09-25	2009-10-28	浜松ホトニクス株式会社	半導体装置
US20060019033A1 (en) *	2004-05-21	2006-01-26	Applied Materials, Inc.	Plasma treatment of hafnium-containing materials
GB0613165D0 (en)	2006-06-28	2006-08-09	Univ Warwick	Real-time infrared measurement and imaging system
JP4289377B2 (ja) *	2006-08-21	2009-07-01	ソニー株式会社	物理量検出装置及び撮像装置
JP4644696B2 (ja)	2007-05-30	2011-03-02	富士フイルム株式会社	裏面照射型撮像素子及びその製造方法
JP2009175026A (ja) *	2008-01-25	2009-08-06	Shimadzu Corp	紫外可視近赤外分光光度計用検出装置
DE102008001675A1 (de) *	2008-05-09	2009-11-12	Robert Bosch Gmbh	Kameramodul mit verbessertem Kühlkonzept
JP5074291B2 (ja) *	2008-05-15	2012-11-14	浜松ホトニクス株式会社	分光モジュール
JP5185206B2 (ja) *	2009-02-24	2013-04-17	浜松ホトニクス株式会社	半導体光検出素子
JP5185205B2 (ja)	2009-02-24	2013-04-17	浜松ホトニクス株式会社	半導体光検出素子
JP5185208B2 (ja)	2009-02-24	2013-04-17	浜松ホトニクス株式会社	フォトダイオード及びフォトダイオードアレイ
JP5185207B2 (ja)	2009-02-24	2013-04-17	浜松ホトニクス株式会社	フォトダイオードアレイ
JP5208871B2 (ja) *	2009-07-13	2013-06-12	浜松ホトニクス株式会社	光検出器
US8772717B2 (en)	2009-08-10	2014-07-08	Drs Rsta, Inc.	Radiation detector having a bandgap engineered absorber
US8384559B2 (en) *	2010-04-13	2013-02-26	Silicon Laboratories Inc.	Sensor device with flexible interface and updatable information store
JP5486541B2 (ja)	2011-03-31	2014-05-07	浜松ホトニクス株式会社	フォトダイオードアレイモジュール及びその製造方法
JP5486542B2 (ja)	2011-03-31	2014-05-07	浜松ホトニクス株式会社	フォトダイオードアレイモジュール及びその製造方法
KR102237820B1 (ko)	2014-05-14	2021-04-08	삼성전자주식회사	수평형 포토 다이오드, 이를 포함하는 이미지 센서 및 포토 다이오드, 이미지센서의 제조방법
KR20190105337A (ko) *	2018-03-05	2019-09-17	삼성전자주식회사	반도체 메모리 장치
CN110346313A (zh) *	2019-07-31	2019-10-18	清华大学	一种光调制微纳结构、微集成光谱仪及光谱调制方法
KR20250093301A (ko) *	2022-10-25	2025-06-24	하마마츠 포토닉스 가부시키가이샤	고체 촬상 장치, 및 고체 촬상 장치의 제조 방법

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Publication number	Priority date	Publication date	Assignee	Title
US4422091A (en) *	1981-01-19	1983-12-20	Rockwell International Corporation	Backside illuminated imaging charge coupled device
US4656519A (en) *	1985-10-04	1987-04-07	Rca Corporation	Back-illuminated CCD imagers of interline transfer type
US4912545A (en) *	1987-09-16	1990-03-27	Irvine Sensors Corporation	Bonding of aligned conductive bumps on adjacent surfaces
JPH0222973A (ja) *	1988-07-12	1990-01-25	Mitsubishi Electric Corp	固体撮像装置
JPH0223782A (ja) *	1988-07-12	1990-01-25	Mitsubishi Electric Corp	固体撮像装置
JP2764964B2 (ja) *	1988-11-29	1998-06-11	日本電気株式会社	２波長赤外光受像装置
US5070380A (en) *	1990-08-13	1991-12-03	Eastman Kodak Company	Transfer gate for photodiode to CCD image sensor
US5134274A (en) *	1991-03-18	1992-07-28	Hughes Aircraft Company	Two-sided solid-state imaging device
JPH05133796A (ja) *	1991-11-15	1993-05-28	Mitsubishi Heavy Ind Ltd	複数波長検知電荷結合素子装置
JP2651323B2 (ja) *	1992-07-22	1997-09-10	浜松ホトニクス株式会社	半導体エネルギー検出器
US5227313A (en) *	1992-07-24	1993-07-13	Eastman Kodak Company	Process for making backside illuminated image sensors
US5512750A (en) *	1994-06-03	1996-04-30	Martin Marietta Corporation	A-dual band IR sensor having two monolithically integrated staring detector arrays for simultaneous, coincident image readout
US5652150A (en) *	1995-06-07	1997-07-29	Texas Instruments Incorporated	Hybrid CCD imaging
JPH09304182A (ja) *	1996-05-20	1997-11-28	Satake Eng Co Ltd	穀粒色彩選別機
US5808329A (en) *	1996-07-15	1998-09-15	Raytheon Company	Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials
US5808350A (en) *	1997-01-03	1998-09-15	Raytheon Company	Integrated IR, visible and NIR sensor and methods of fabricating same
JP3957806B2 (ja) *	1997-03-12	2007-08-15	富士フイルム株式会社	ペルチェ冷却装置
US5904495A (en) *	1997-06-11	1999-05-18	Massachusetts Institute Of Technology	Interconnection technique for hybrid integrated devices
JP4809537B2 (ja) *	2000-04-05	2011-11-09	富士フイルム株式会社	撮像制御装置および撮像制御方法
US6717151B2 (en) *	2000-07-10	2004-04-06	Canon Kabushiki Kaisha	Image pickup apparatus

2000
- 2000-04-13 WO PCT/JP2000/002424 patent/WO2000062344A1/ja active IP Right Grant
- 2000-04-13 DE DE60035580T patent/DE60035580T2/de not_active Expired - Lifetime
- 2000-04-13 AU AU38372/00A patent/AU3837200A/en not_active Abandoned
- 2000-04-13 JP JP2000611318A patent/JP4786035B2/ja not_active Expired - Fee Related
- 2000-04-13 EP EP00917308A patent/EP1179851B1/de not_active Expired - Lifetime
2001
- 2001-10-12 US US09/974,817 patent/US6872992B2/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP1179851A1 (de)	2002-02-13
EP1179851A4 (de)	2004-04-21
DE60035580T2 (de)	2008-04-17
EP1179851B1 (de)	2007-07-18
AU3837200A (en)	2000-11-14
WO2000062344A1 (en)	2000-10-19
JP4786035B2 (ja)	2011-10-05
US20020020859A1 (en)	2002-02-21
US6872992B2 (en)	2005-03-29

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DE19983871T1 (de)	2002-01-31	Fönvorrichtung
DE10084676T1 (de)	2003-04-30	Einmallanzettvorrichtung
DE50002834D1 (de)	2003-08-14	Handstempel
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DE69937739D1 (de)	2008-01-24	Halbleitervorrichtung
ATE297895T1 (de)	2005-07-15	4-pyridinyl-n-acyl-l-phenylalanine
DE60005959D1 (de)	2003-11-20	Halbleiteranordnung
DE69920486D1 (de)	2004-10-28	Halbleiterschaltung
DE60032651D1 (de)	2007-02-15	Halbleitermodul
DE60041742D1 (de)	2009-04-23	Halbleiterlaser
ID30214A (id)	2001-11-15	Turunan resorsinol
EP1229591A4 (de)	2007-01-03	Halbleiteranordnung
DE50000805D1 (de)	2003-01-09	Aufsitzspanner
DE60019144D1 (de)	2005-05-04	Halbleitervorrichtung
DE10085008T1 (de)	2002-10-10	Oberflächenbehandlungsdüse
DE60041030D1 (de)	2009-01-22	Halbleiterbauelement
NO20003024D0 (no)	2000-06-13	Innkapsling
DE50003259D1 (de)	2003-09-18	Textilie
DE19983890T1 (de)	2002-03-07	Ventiltaktgebungsjustiereinrichtung
DE50001640D1 (de)	2003-05-08	Nahfeldoptische untersuchungsvorrichtung
DE60009999D1 (de)	2004-05-27	Halbleitervorrichtung
ATE440824T1 (de)	2009-09-15	Nitro-sulfobenzamide

Legal Events

Date	Code	Title	Description
2008-03-20	8381	Inventor (new situation)	Inventor name: MURAMATSU, MASAHARU, HAMAMATSU-SHI SHIZUOKA-KE, JP
2008-08-07	8364	No opposition during term of opposition