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DE60016928D1 - Mikromechanisches herstellungsverfahren mit überblendeten masken - Google Patents

Mikromechanisches herstellungsverfahren mit überblendeten masken

Info

Publication number
DE60016928D1
DE60016928D1 DE60016928T DE60016928T DE60016928D1 DE 60016928 D1 DE60016928 D1 DE 60016928D1 DE 60016928 T DE60016928 T DE 60016928T DE 60016928 T DE60016928 T DE 60016928T DE 60016928 D1 DE60016928 D1 DE 60016928D1
Authority
DE
Germany
Prior art keywords
layer
masking material
masking
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60016928T
Other languages
English (en)
Inventor
Lianzhong Yu
P Ried
D Goldberg
Duli Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Geophysical Corp
Original Assignee
Ion Geophysical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Geophysical Corp filed Critical Ion Geophysical Corp
Application granted granted Critical
Publication of DE60016928D1 publication Critical patent/DE60016928D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388Etch mask forming
    • B81C1/00396Mask characterised by its composition, e.g. multilayer masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/04Optical MEMS
    • B81B2201/042Micromirrors, not used as optical switches
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128Processes for removing material
    • B81C2201/013Etching
    • B81C2201/0132Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128Processes for removing material
    • B81C2201/013Etching
    • B81C2201/0133Wet etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0109Bonding an individual cap on the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Pressure Sensors (AREA)
  • Electron Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE60016928T 1999-07-13 2000-07-13 Mikromechanisches herstellungsverfahren mit überblendeten masken Expired - Lifetime DE60016928D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/352,025 US6617098B1 (en) 1999-07-13 1999-07-13 Merged-mask micro-machining process
PCT/US2000/019127 WO2001004638A1 (en) 1999-07-13 2000-07-13 Merged-mask micro-machining process

Publications (1)

Publication Number Publication Date
DE60016928D1 true DE60016928D1 (de) 2005-01-27

Family

ID=23383482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60016928T Expired - Lifetime DE60016928D1 (de) 1999-07-13 2000-07-13 Mikromechanisches herstellungsverfahren mit überblendeten masken

Country Status (9)

Country Link
US (1) US6617098B1 (de)
EP (3) EP1196788B1 (de)
JP (1) JP4851036B2 (de)
AT (1) ATE285583T1 (de)
AU (1) AU5932700A (de)
CA (2) CA2714788C (de)
DE (1) DE60016928D1 (de)
NO (3) NO329678B1 (de)
WO (1) WO2001004638A1 (de)

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US6315423B1 (en) * 1999-07-13 2001-11-13 Input/Output, Inc. Micro machined mirror
US6831765B2 (en) * 2001-02-22 2004-12-14 Canon Kabushiki Kaisha Tiltable-body apparatus, and method of fabricating the same
EP1890181B1 (de) * 2001-10-19 2012-07-04 ION Geophysical Corporation Digitale optische Schaltvorrichtung und Verfahren zu ihrer Herstellung
DE60226262T2 (de) * 2001-10-19 2009-05-20 ION Geophysical Corp., Houston Digitale optische schaltvorrichtung und verfahren zu ihrer herstellung
US7473644B2 (en) * 2004-07-01 2009-01-06 Micron Technology, Inc. Method for forming controlled geometry hardmasks including subresolution elements
US20080022771A1 (en) * 2006-07-28 2008-01-31 Alexander Wolter Micromechanical component
KR100868759B1 (ko) * 2007-01-25 2008-11-17 삼성전기주식회사 멤스 디바이스 및 이의 제조방법
JP4992576B2 (ja) * 2007-06-29 2012-08-08 富士通株式会社 マイクロ構造体製造方法およびマイクロ構造体
JP5775409B2 (ja) * 2011-09-29 2015-09-09 スタンレー電気株式会社 光スキャナの製造方法
DE102017215575A1 (de) * 2017-09-05 2019-03-07 Robert Bosch Gmbh Mikromechanische Vorrichtung

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US501893A (en) 1893-07-18 Eraser-holder
JPS5146879A (en) * 1974-10-18 1976-04-21 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho
US4791046A (en) * 1984-04-26 1988-12-13 Oki Electric Industry Co., Ltd. Process for forming mask patterns of positive type resist material with trimethylsilynitrile
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
EP0286855A1 (de) * 1987-04-15 1988-10-19 BBC Brown Boveri AG Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat
US4863560A (en) 1988-08-22 1989-09-05 Xerox Corp Fabrication of silicon structures by single side, multiple step etching process
GB8910961D0 (en) * 1989-05-12 1989-06-28 Am Int Method of forming a pattern on a surface
US4902377A (en) 1989-05-23 1990-02-20 Motorola, Inc. Sloped contact etch process
US4985374A (en) 1989-06-30 1991-01-15 Kabushiki Kaisha Toshiba Making a semiconductor device with ammonia treatment of photoresist
US5006202A (en) * 1990-06-04 1991-04-09 Xerox Corporation Fabricating method for silicon devices using a two step silicon etching process
US5131978A (en) * 1990-06-07 1992-07-21 Xerox Corporation Low temperature, single side, multiple step etching process for fabrication of small and large structures
JPH0476959A (ja) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp 半導体圧力センサの製造方法
US5091339A (en) 1990-07-23 1992-02-25 Microelectronics And Computer Technology Corporation Trenching techniques for forming vias and channels in multilayer electrical interconnects
US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
EP0570609B1 (de) * 1992-05-20 1999-11-03 International Business Machines Corporation Verfahren zum Erzeugen einer mehrstufigen Struktur in einem Substrat
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE4317623C2 (de) 1993-05-27 2003-08-21 Bosch Gmbh Robert Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung
JP3213142B2 (ja) * 1993-11-02 2001-10-02 株式会社日立製作所 単結晶基板構造体の製造方法
US5667940A (en) * 1994-05-11 1997-09-16 United Microelectronics Corporation Process for creating high density integrated circuits utilizing double coating photoresist mask
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks
US5754205A (en) 1995-04-19 1998-05-19 Seiko Epson Corporation Ink jet recording head with pressure chambers arranged along a 112 lattice orientation in a single-crystal silicon substrate
US5738757A (en) 1995-11-22 1998-04-14 Northrop Grumman Corporation Planar masking for multi-depth silicon etching
US5753417A (en) 1996-06-10 1998-05-19 Sharp Microelectronics Technology, Inc. Multiple exposure masking system for forming multi-level resist profiles
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
US5821169A (en) * 1996-08-05 1998-10-13 Sharp Microelectronics Technology,Inc. Hard mask method for transferring a multi-level photoresist pattern
US5966617A (en) * 1996-09-20 1999-10-12 Kavlico Corporation Multiple local oxidation for surface micromachining
JPH1096744A (ja) * 1996-09-20 1998-04-14 Zexel Corp 容量型加速度センサの製造方法
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US5935734A (en) * 1997-03-03 1999-08-10 Micron Technology, Inc. Method for fabrication of and apparatus for use as a semiconductor photomask
US5911850A (en) * 1997-06-20 1999-06-15 International Business Machines Corporation Separation of diced wafers
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JPH1145874A (ja) * 1997-07-25 1999-02-16 Toshiba Corp 半導体装置の製造方法
JP3011144B2 (ja) 1997-07-31 2000-02-21 日本電気株式会社 光スキャナとその駆動方法
JP3426498B2 (ja) * 1997-08-13 2003-07-14 株式会社日立ユニシアオートモティブ 圧力センサ
JPH1183886A (ja) * 1997-09-11 1999-03-26 Zexel Corp 静電容量型マイクロフローセンサ及び静電容量型マイクロフローセンサの製造方法並びに静電容量型マイクロフローセンサの外付け用固定具
US6007968A (en) * 1997-10-29 1999-12-28 International Business Machines Corporation Method for forming features using frequency doubling hybrid resist and device formed thereby
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Also Published As

Publication number Publication date
NO329678B1 (no) 2010-11-29
JP2003504221A (ja) 2003-02-04
CA2378725A1 (en) 2001-01-18
NO20020139L (no) 2002-03-12
EP2264468A3 (de) 2012-02-08
NO20092749L (no) 2002-03-12
WO2001004638A1 (en) 2001-01-18
EP1510864A2 (de) 2005-03-02
NO20020139D0 (no) 2002-01-11
EP1510864B1 (de) 2010-11-03
CA2378725C (en) 2012-09-04
AU5932700A (en) 2001-01-30
EP1510864A3 (de) 2008-01-23
EP2264468A2 (de) 2010-12-22
EP1196788A1 (de) 2002-04-17
JP4851036B2 (ja) 2012-01-11
CA2714788A1 (en) 2001-01-18
US6617098B1 (en) 2003-09-09
EP1196788B1 (de) 2004-12-22
NO20100794L (no) 2002-03-12
ATE285583T1 (de) 2005-01-15
EP2264468B1 (de) 2013-07-03
CA2714788C (en) 2013-11-12
EP1196788A4 (de) 2003-01-15

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Legal Events

Date Code Title Description
8332 No legal effect for de