DE3880816D1 - Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden. - Google Patents

Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden.

Info

Publication number: DE3880816D1
Authority: DE; Germany
Prior art keywords: oxydes; conducting; thin films; forming thin; suprale
Prior art date: 1987-06-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8888905417T

Other languages

English (en)

Other versions

DE3880816T2 (de

Inventor

Makoto Takahashi

Hiroshi Umino

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

JFE Steel Corp

Original Assignee

Kawasaki Steel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-16

Filing date

1988-06-15

Publication date

1993-06-09

1988-06-15 Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp

1993-06-09 Publication of DE3880816D1 publication Critical patent/DE3880816D1/de

1993-08-12 Application granted granted Critical

1993-08-12 Publication of DE3880816T2 publication Critical patent/DE3880816T2/de

2008-06-16 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/408—Oxides of copper or solid solutions thereof
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
- H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/734—From organometallic precursors, e.g. acetylacetonates

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Organic Chemistry (AREA)
Ceramic Engineering (AREA)
General Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Manufacturing & Machinery (AREA)
Inorganic Compounds Of Heavy Metals (AREA)
Superconductors And Manufacturing Methods Therefor (AREA)
Chemical Vapour Deposition (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Superconductor Devices And Manufacturing Methods Thereof (AREA)
Oxygen, Ozone, And Oxides In General (AREA)

DE8888905417T 1987-06-16 1988-06-15 Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden. Expired - Fee Related DE3880816T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP14797587		1987-06-16
PCT/JP1988/000574 WO1988010323A1 (en)	1987-06-16	1988-06-15	Complex compounds for forming thin film of oxide superconductor and process for forming thin film of oxide superconductor

Publications (2)

Publication Number	Publication Date
DE3880816D1 true DE3880816D1 (de)	1993-06-09
DE3880816T2 DE3880816T2 (de)	1993-08-12

Family

ID=15442333

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
DE3887846T Expired - Fee Related DE3887846T2 (de)	1987-06-16	1988-06-15	Verfahren zur bildung von dünnfilmen aus supraleitenden oxyden.
DE8888905417T Expired - Fee Related DE3880816T2 (de)	1987-06-16	1988-06-15	Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden.

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
DE3887846T Expired - Fee Related DE3887846T2 (de)	1987-06-16	1988-06-15	Verfahren zur bildung von dünnfilmen aus supraleitenden oxyden.

Country Status (5)

Country	Link
US (1)	US5447909A (de)
EP (2)	EP0319585B1 (de)
JP (2)	JP2786200B2 (de)
DE (2)	DE3887846T2 (de)
WO (2)	WO1988010499A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3851751T2 (de) *	1987-12-17	1995-02-02	Univ Colorado Foundation	Chemischer dampf-niederschlag von gemischten oxidfilmen.
JP2575443B2 (ja) *	1988-02-04	1997-01-22	株式会社フジクラ	酸化物系超電導線材の製造方法
JPH0255219A (ja) *	1988-08-18	1990-02-23	Mitsubishi Metal Corp	超伝導体薄膜の製造方法
US5466084A (en) *	1994-06-16	1995-11-14	Dana Corporation	Dust boot retainer ring
US5876503A (en) *	1996-11-27	1999-03-02	Advanced Technology Materials, Inc.	Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
FI117979B (fi)	2000-04-14	2007-05-15	Asm Int	Menetelmä oksidiohutkalvojen valmistamiseksi
KR100464810B1 (ko) *	2001-06-30	2005-01-05	한국화학연구원	유기 알칼리토금속 착화합물
US8383525B2 (en)	2008-04-25	2013-02-26	Asm America, Inc.	Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US10233541B2 (en) *	2012-06-29	2019-03-19	Applied Materials, Inc.	Deposition of films containing alkaline earth metals
CN110431677B (zh)	2017-02-14	2024-04-02	加州理工学院	铜酸盐超导体及其制造及/或使用方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3824082A (en) *	1972-07-03	1974-07-16	Rca Corp	Process for preparing superconducting niobium-gallium alloy
US3894164A (en) *	1973-03-15	1975-07-08	Rca Corp	Chemical vapor deposition of luminescent films
EP0055459A1 (de) *	1980-12-29	1982-07-07	Rikuun Electric co.	Verfahren zur Herstellung von Oxiden durch chemische Dampf-Abscheidung (CVD)
JPS57118002A (en) *	1980-12-29	1982-07-22	Kiichiro Kamata	Manufacture of oxide by chemical vapor phase deposition method
US4501602A (en)	1982-09-15	1985-02-26	Corning Glass Works	Process for making sintered glasses and ceramics
JPS6337939A (ja) *	1986-07-31	1988-02-18	大日本印刷株式会社	絵柄と同調するエンボスを有する熱可塑性樹脂成形体の製造方法
JPS62258922A (ja) *	1986-05-06	1987-11-11	Babcock Hitachi Kk	ス−トブロワ制御装置
JPS63139750A (ja) *	1986-12-01	1988-06-11	Kanai Hiroyuki	ドツトプリンタ用印字ワイヤ
JPS63139751A (ja) *	1986-12-02	1988-06-11	Alps Electric Co Ltd	印刷システムにおける印刷方法
JPS63225528A (ja) *	1987-03-13	1988-09-20	Toa Nenryo Kogyo Kk	超伝導性複合酸化物の製造方法
JPH01212220A (ja) *	1987-10-09	1989-08-25	Fujitsu Ltd	超伝導材料の気相成長方法
JPH01104774A (ja) *	1987-10-14	1989-04-21	Matsushita Electric Ind Co Ltd	酸化物超伝導体薄膜の製造方法
US5089466A (en) *	1987-12-17	1992-02-18	The University Of Colorado Foundation, Inc.	Stable mixed metal superconductive oxides containing nitrogen
JPH01212218A (ja) *	1988-02-19	1989-08-25	Sumitomo Metal Ind Ltd	超電導酸化物薄膜の製造方法
JPH01308802A (ja) *	1988-06-06	1989-12-13	Mitsubishi Metal Corp	膜状超電導体の製造方法及びその装置
JPH01308809A (ja) *	1988-06-06	1989-12-13	Mitsubishi Metal Corp	膜状超電導体の製造方法
US4970093A (en) *	1990-04-12	1990-11-13	University Of Colorado Foundation	Chemical deposition methods using supercritical fluid solutions

1988
- 1988-06-15 JP JP63147525A patent/JP2786200B2/ja not_active Expired - Fee Related
- 1988-06-15 EP EP88905418A patent/EP0319585B1/de not_active Expired - Lifetime
- 1988-06-15 DE DE3887846T patent/DE3887846T2/de not_active Expired - Fee Related
- 1988-06-15 WO PCT/JP1988/000575 patent/WO1988010499A1/ja active IP Right Grant
- 1988-06-15 EP EP88905417A patent/EP0325659B1/de not_active Expired - Lifetime
- 1988-06-15 WO PCT/JP1988/000574 patent/WO1988010323A1/ja active IP Right Grant
- 1988-06-15 DE DE8888905417T patent/DE3880816T2/de not_active Expired - Fee Related
1991
- 1991-09-09 US US07/756,507 patent/US5447909A/en not_active Expired - Fee Related
1997
- 1997-11-17 JP JP9315017A patent/JP2818751B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0325659B1 (de)	1993-05-05
JP2818751B2 (ja)	1998-10-30
EP0325659A4 (de)	1989-09-19
WO1988010499A1 (en)	1988-12-29
EP0319585B1 (de)	1994-02-16
JPH10140354A (ja)	1998-05-26
JP2786200B2 (ja)	1998-08-13
US5447909A (en)	1995-09-05
EP0325659A1 (de)	1989-08-02
DE3887846D1 (de)	1994-03-24
WO1988010323A1 (en)	1988-12-29
DE3880816T2 (de)	1993-08-12
EP0319585A1 (de)	1989-06-14
DE3887846T2 (de)	1994-05-19
EP0319585A4 (de)	1989-09-19
JPH0193405A (ja)	1989-04-12

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DE69027206D1 (de)	1996-07-04	Verfahren zur bildung von epitaxialschichten
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DE69132172D1 (de)	2000-06-08	Verfahren zur Abtrennung von Blutkomponenten aus Vollblut
DE69322498D1 (de)	1999-01-21	Verfahren zur identifizierung von normalen biomedizinischen proben
DE3781056D1 (de)	1992-09-17	Verfahren zur herstellung von gegenstaenden aus polyaethylen.
DE3483501D1 (de)	1990-12-06	Verfahren zur herstellung von keramischen koerpern.
DE3874028D1 (de)	1992-10-01	Verfahren zur justierung von photomasken.
DE3864208D1 (de)	1991-09-19	Verfahren zur herstellung von orientierten folien.
DE59305971D1 (de)	1997-04-30	Verfahren zur entölung von rohlecithin
DE3885284D1 (de)	1993-12-02	Verfahren und vorrichtung zur bildung von tropfen.
DE3871175D1 (de)	1992-06-25	Verfahren zur herstellung von perovskit und abo3-typ-oxyden.
DE3580760D1 (de)	1991-01-10	Verfahren zur herstellung von buten-1 aus aethylen.
DE58902814D1 (de)	1993-01-07	Verfahren zur entfernung von silanverbindungen aus silanhaltigen abgasen.
DE3880816D1 (de)	1993-06-09	Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden.
ATE118498T1 (de)	1995-03-15	Verfahren zur reinigung von n- phosphonmethylglyzin.
DE3861527D1 (de)	1991-02-21	Verfahren zur behandlung von photolacken.
DE68902787D1 (de)	1992-10-15	Verfahren zur reduktion von carbonylverbindungen.
DE3880119D1 (de)	1993-05-13	Verfahren zur vancomycin-ausfaellung.
DE3874510D1 (de)	1992-10-15	Verfahren zur stabilisierung von hydroisomeraten.
ATA323687A (de)	1992-11-15	Verfahren zur gewinnung von ballaststoffen aus trebern
DE3671179D1 (de)	1990-06-21	Verfahren zur oberflaechenausruestung von folien.
AT387783B (de)	1989-03-10	Verfahren zur herstellung von hochtemperaturbestaendigen folien
DE59300123D1 (de)	1995-05-11	Verfahren zur Entfernung von Wasserstoffhaltigen Silanen aus Silanen.

Legal Events

Date	Code	Title	Description
1994-06-01	8364	No opposition during term of opposition
2001-08-09	8339	Ceased/non-payment of the annual fee