[go: up one dir, main page]

DE3861783D1 - Verfahren zur gasphasensilylierung von photoresisten. - Google Patents

Verfahren zur gasphasensilylierung von photoresisten.

Info

Publication number
DE3861783D1
DE3861783D1 DE8888105081T DE3861783T DE3861783D1 DE 3861783 D1 DE3861783 D1 DE 3861783D1 DE 8888105081 T DE8888105081 T DE 8888105081T DE 3861783 T DE3861783 T DE 3861783T DE 3861783 D1 DE3861783 D1 DE 3861783D1
Authority
DE
Germany
Prior art keywords
silylization
photoresists
gas phase
phase
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888105081T
Other languages
English (en)
Inventor
Steven J Holmes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3861783D1 publication Critical patent/DE3861783D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
DE8888105081T 1987-05-19 1988-03-29 Verfahren zur gasphasensilylierung von photoresisten. Expired - Lifetime DE3861783D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/051,354 US4808511A (en) 1987-05-19 1987-05-19 Vapor phase photoresist silylation process

Publications (1)

Publication Number Publication Date
DE3861783D1 true DE3861783D1 (de) 1991-03-28

Family

ID=21970788

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888105081T Expired - Lifetime DE3861783D1 (de) 1987-05-19 1988-03-29 Verfahren zur gasphasensilylierung von photoresisten.

Country Status (4)

Country Link
US (1) US4808511A (de)
EP (1) EP0291670B1 (de)
JP (1) JPS63300237A (de)
DE (1) DE3861783D1 (de)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186788A (en) * 1987-07-23 1993-02-16 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
US4996136A (en) * 1988-02-25 1991-02-26 At&T Bell Laboratories Radiation sensitive materials and devices made therewith
NL8801255A (nl) * 1988-05-16 1989-12-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE68927989T2 (de) * 1988-08-09 1997-09-18 Toshiba Kawasaki Kk Bilderzeugungsverfahren
US5407786A (en) * 1988-08-09 1995-04-18 Kabushiki Kaisha Toshiba Method of forming a mask on a semiconductor substrate via photosensitive resin deposition, ammonia treatment and selective silylation
JP3001607B2 (ja) * 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
JP2930971B2 (ja) * 1989-06-22 1999-08-09 株式会社東芝 パターン形成方法
US5041362A (en) * 1989-07-06 1991-08-20 Texas Instruments Incorporated Dry developable resist etch chemistry
GB8920622D0 (en) * 1989-09-12 1989-10-25 Du Pont Improvements in or relating to lithographic printing plates
JP2573371B2 (ja) * 1989-10-11 1997-01-22 沖電気工業株式会社 ３層レジスト法用の中間層形成材
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5032216A (en) * 1989-10-20 1991-07-16 E. I. Du Pont De Nemours And Company Non-photographic method for patterning organic polymer films
JP2549317B2 (ja) * 1990-03-29 1996-10-30 ホーヤ株式会社 レジストパターンの形成方法
CA2131507C (en) * 1993-11-08 1999-11-02 Edwin A. Chandross Resist materials and related processes
WO1996015861A1 (en) * 1994-11-22 1996-05-30 Complex Fluid Systems, Inc. Non-aminic photoresist adhesion promoters for microelectronic applications
EP0949277A3 (de) * 1995-06-22 2000-12-27 Yuri Gudimenko Oberflächenmodifizierung von Polymeren und Kohlenstoffhaltigen Materialen
US6258972B1 (en) 1995-08-03 2001-07-10 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
US5707783A (en) * 1995-12-04 1998-01-13 Complex Fluid Systems, Inc. Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging
US5667920A (en) * 1996-03-11 1997-09-16 Polaroid Corporation Process for preparing a color filter
US6054255A (en) * 1996-08-01 2000-04-25 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
TW351834B (en) * 1996-10-16 1999-02-01 Matsushita Electric Ind Co Ltd Method of round formation and surface treatment agent
TW353775B (en) * 1996-11-27 1999-03-01 Tokyo Electron Ltd Production of semiconductor device
TW392229B (en) 1997-01-23 2000-06-01 Matsushita Electric Ind Co Ltd Method of manufacturing semiconductor device and apparatus for same
TW383416B (en) * 1997-06-26 2000-03-01 Matsushita Electric Ind Co Ltd Pattern forming method
KR100268912B1 (en) * 1997-11-06 2000-12-01 Hyundai Micro Electronics Co Method for etching of semiconductor device
US6221680B1 (en) * 1998-07-31 2001-04-24 International Business Machines Corporation Patterned recess formation using acid diffusion
US6140023A (en) * 1998-12-01 2000-10-31 Advanced Micro Devices, Inc. Method for transferring patterns created by lithography
US6475904B2 (en) * 1998-12-03 2002-11-05 Advanced Micro Devices, Inc. Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
AU2001210739A1 (en) * 2000-02-22 2001-09-03 Euv Limited Liability Corporation Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
KR100862301B1 (ko) * 2000-07-16 2008-10-13 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피를 위한 고분해능 오버레이 정렬 방법 및 시스템
EP1303793B1 (de) * 2000-07-17 2015-01-28 Board Of Regents, The University Of Texas System Verfahren und gerät zur automatischen zufuhr von flüssigen materialien in der imprint-lithogrpahie
JP2004505273A (ja) * 2000-08-01 2004-02-19 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 転写リソグラフィのための透明テンプレートと基板の間のギャップおよび配向を高精度でセンシングするための方法
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US6602794B1 (en) * 2001-03-09 2003-08-05 Advanced Micro Devices, Inc. Silylation process for forming contacts
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6980282B2 (en) 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7122079B2 (en) * 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US7759407B2 (en) * 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8999734B2 (en) * 2009-03-10 2015-04-07 American Air Liquide, Inc. Cyclic amino compounds for low-k silylation
US20110081618A1 (en) * 2009-10-06 2011-04-07 Nanya Technology Corporation Litho-litho etch (lle) double patterning methods
CN105637097A (zh) 2013-08-05 2016-06-01 特韦斯特生物科学公司 从头合成的基因文库
CA2975852A1 (en) 2015-02-04 2016-08-11 Twist Bioscience Corporation Methods and devices for de novo oligonucleic acid assembly
CA2975855A1 (en) 2015-02-04 2016-08-11 Twist Bioscience Corporation Compositions and methods for synthetic gene assembly
US9981239B2 (en) 2015-04-21 2018-05-29 Twist Bioscience Corporation Devices and methods for oligonucleic acid library synthesis
JP6982362B2 (ja) 2015-09-18 2021-12-17 ツイスト バイオサイエンス コーポレーション オリゴ核酸変異体ライブラリーとその合成
WO2017053450A1 (en) 2015-09-22 2017-03-30 Twist Bioscience Corporation Flexible substrates for nucleic acid synthesis
CN108603307A (zh) 2015-12-01 2018-09-28 特韦斯特生物科学公司 功能化表面及其制备
CN109996876A (zh) 2016-08-22 2019-07-09 特韦斯特生物科学公司 从头合成的核酸文库
JP6871364B2 (ja) 2016-09-21 2021-05-12 ツイスト バイオサイエンス コーポレーション 核酸に基づくデータ保存
WO2018112426A1 (en) 2016-12-16 2018-06-21 Twist Bioscience Corporation Variant libraries of the immunological synapse and synthesis thereof
SG11201907713WA (en) 2017-02-22 2019-09-27 Twist Bioscience Corp Nucleic acid based data storage
EP3595674A4 (de) 2017-03-15 2020-12-16 Twist Bioscience Corporation Variante bibliotheken der immunologischen synapse und synthese davon
US10696965B2 (en) 2017-06-12 2020-06-30 Twist Bioscience Corporation Methods for seamless nucleic acid assembly
WO2018231864A1 (en) 2017-06-12 2018-12-20 Twist Bioscience Corporation Methods for seamless nucleic acid assembly
AU2018328847A1 (en) 2017-09-11 2020-04-23 Twist Bioscience Corporation GPCR binding proteins and synthesis thereof
CA3079613A1 (en) 2017-10-20 2019-04-25 Twist Bioscience Corporation Heated nanowells for polynucleotide synthesis
SG11202006460SA (en) 2018-01-04 2020-08-28 Twist Bioscience Corp Dna-based digital information storage
WO2019222706A1 (en) 2018-05-18 2019-11-21 Twist Bioscience Corporation Polynucleotides, reagents, and methods for nucleic acid hybridization
CA3131691A1 (en) 2019-02-26 2020-09-03 Twist Bioscience Corporation Variant nucleic acid libraries for antibody optimization
US11492727B2 (en) 2019-02-26 2022-11-08 Twist Bioscience Corporation Variant nucleic acid libraries for GLP1 receptor
CN114729342A (zh) 2019-06-21 2022-07-08 特韦斯特生物科学公司 基于条形码的核酸序列装配
WO2021061829A1 (en) 2019-09-23 2021-04-01 Twist Bioscience Corporation Variant nucleic acid libraries for crth2
CA3155630A1 (en) 2019-09-23 2021-04-01 Twist Bioscience Corporation Variant nucleic acid libraries for single domain antibodies

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL63100A0 (en) * 1980-07-04 1981-09-13 Gist Brocades Nv Trimethylsilylation of organic compounds and certain trimethylsilylated thiols obtained thereby
JPS5723937A (en) * 1980-07-17 1982-02-08 Matsushita Electric Ind Co Ltd Photographic etching method
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
GB8308823D0 (en) * 1983-03-30 1983-05-11 Dow Corning Ltd Silylation process
US4596761A (en) * 1983-11-02 1986-06-24 Hughes Aircraft Company Graft polymerized SiO2 lithographic masks
GB8403698D0 (en) * 1984-02-13 1984-03-14 British Telecomm Semiconductor device fabrication
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
GB8611229D0 (en) * 1986-05-08 1986-06-18 Ucb Sa Forming positive pattern
DE3772267D1 (de) * 1986-06-12 1991-09-26 Matsushita Electric Ind Co Ltd Bilderzeugungsverfahren.

Also Published As

Publication number Publication date
EP0291670A1 (de) 1988-11-23
EP0291670B1 (de) 1991-02-20
US4808511A (en) 1989-02-28
JPH0456981B2 (de) 1992-09-10
JPS63300237A (ja) 1988-12-07

Similar Documents

Publication Publication Date Title
DE3861783D1 (de) Verfahren zur gasphasensilylierung von photoresisten.
DE59000200D1 (de) Verfahren zur gewinnung von erdgas.
DE3886710D1 (de) Verfahren zur selektiven inhibierung von hiv.
ATE73748T1 (de) Verfahren zur fluorierung in der gasphase.
DE69119610D1 (de) Verfahren zur mikro-einkapselung von hyperbarem gas
DE68922427D1 (de) Verfahren zur Zurückgewinnung von sauerstoffreichem Gas.
DE3877834D1 (de) Verfahren zur behandlung von abgasen.
DE3866138D1 (de) Verfahren zur unterstuetzung der rechtschreibung zusammengesetzter woerter.
DE68903399D1 (de) Verfahren zur gasphasenfluorierung.
DE3774360D1 (de) Verfahren zur hydroraffinierung von kohlenwasserstoff enthaltenden einsaetzen.
DE3681034D1 (de) Verfahren zur oxydehydrierung von ethan.
DE68913251D1 (de) Verfahren zur Verringerung der Heterogenität von monoklonalen Antikörpern.
DE3873094D1 (de) Verfahren zur aufbereitung von gas.
DE68904815D1 (de) Verfahren zur rueckgewinnung von methacrolein.
DE68906562D1 (de) Verfahren zur kristallisierung von bisphenol-a-phenol-addukt.
DE3769879D1 (de) Verfahren zur rueckgewinnung von metallen.
DE58901598D1 (de) Verfahren zur gewinnung von rohargon.
DE3681987D1 (de) Verfahren zur entstickstoffung von stickstoff enthaltenden kohlenwasserstoffen.
DE3769855D1 (de) Verfahren zur rueckgewinnung von metallen.
DE3480923D1 (de) Verfahren zur c-methylierung von 2-methylbutyraten.
DE69001485D1 (de) Verfahren zur gasphasen-herstellung von diamant.
DE69006489D1 (de) Verfahren zur kontinuierlichen wiedergewinnung von fluorwasserstoffgas.
AT367769B (de) Verfahren zur reinigung von proteinen
DE3874510D1 (de) Verfahren zur stabilisierung von hydroisomeraten.
DE69103743D1 (de) Verfahren zur Flüssigphasenreaktion.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee