DE3856475D1 - Monokristallines Dünnschichtsubstrat - Google Patents

Monokristallines Dünnschichtsubstrat

Info

Publication number: DE3856475D1
Authority: DE; Germany
Prior art keywords: thin film; film substrate; monocrystalline thin; monocrystalline; substrate
Prior art date: 1987-03-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE3856475T

Other languages

English (en)

Other versions

DE3856475T2 (de

Inventor

Takahiro Imai

Naoji Fujimori

Hideaki Nakahata

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee

Sumitomo Electric Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-03-12

Filing date

1988-03-11

Publication date

2001-07-12

1987-03-12 Priority claimed from JP5838387A external-priority patent/JPH0810670B2/ja

1987-08-10 Priority claimed from JP62200460A external-priority patent/JP2664056B2/ja

1988-03-11 Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd

2001-07-12 Publication of DE3856475D1 publication Critical patent/DE3856475D1/de

2001-11-08 Application granted granted Critical

2001-11-08 Publication of DE3856475T2 publication Critical patent/DE3856475T2/de

2008-03-12 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

DE3856475T 1987-03-12 1988-03-11 Monokristallines Dünnschichtsubstrat Expired - Lifetime DE3856475T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP5838387A JPH0810670B2 (ja)	1987-03-12	1987-03-12	薄膜単結晶シリコン基板
JP62200460A JP2664056B2 (ja)	1987-08-10	1987-08-10	薄膜単結晶基板

Publications (2)

Publication Number	Publication Date
DE3856475D1 true DE3856475D1 (de)	2001-07-12
DE3856475T2 DE3856475T2 (de)	2001-11-08

Family

ID=26399434

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
DE3852960T Expired - Lifetime DE3852960T2 (de)	1987-03-12	1988-03-11	Monokristallines Dünnschichtsubstrat.
DE3856278T Expired - Fee Related DE3856278T2 (de)	1987-03-12	1988-03-11	Monokristallines Dünnschichtsubstrat
DE3856475T Expired - Lifetime DE3856475T2 (de)	1987-03-12	1988-03-11	Monokristallines Dünnschichtsubstrat

Family Applications Before (2)

Application Number	Title	Priority Date	Filing Date
DE3852960T Expired - Lifetime DE3852960T2 (de)	1987-03-12	1988-03-11	Monokristallines Dünnschichtsubstrat.
DE3856278T Expired - Fee Related DE3856278T2 (de)	1987-03-12	1988-03-11	Monokristallines Dünnschichtsubstrat

Country Status (3)

Country	Link
US (1)	US5373171A (de)
EP (3)	EP0619599B1 (de)
DE (3)	DE3852960T2 (de)

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US5272009A (en) *	1988-10-21	1993-12-21	Battelle Memorial Institute	Laminate material and its use as heat-sink
CH675997A5 (en) *	1988-10-21	1990-11-30	Battelle Memorial Institute	Thermo-conductive sintered silicon carbide laminate
JP2730145B2 (ja) *	1989-03-07	1998-03-25	住友電気工業株式会社	単結晶ダイヤモンド層の形成法
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EP0420188A1 (de) *	1989-09-27	1991-04-03	Sumitomo Electric Industries, Ltd.	Halbleitende Heteroübergangsstruktur
NL9000973A (nl) *	1990-04-24	1991-11-18	Philips Nv	Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE4027580A1 (de) *	1990-08-31	1992-03-05	Lux Benno	Verbundkoerper, verfahren zu dessen herstellung und dessen verwendung
JP3131005B2 (ja) *	1992-03-06	2001-01-31	パイオニア株式会社	化合物半導体気相成長装置
US5361272A (en) *	1992-09-18	1994-11-01	Stephen Krissman	Semiconductor architecture and application thereof
US5639551A (en) *	1993-02-10	1997-06-17	California Institute Of Technology	Low pressure growth of cubic boron nitride films
JP3309492B2 (ja) *	1993-05-28	2002-07-29	住友電気工業株式会社	半導体装置用基板
US6958093B2 (en) *	1994-01-27	2005-10-25	Cree, Inc.	Free-standing (Al, Ga, In)N and parting method for forming same
US5679152A (en) *	1994-01-27	1997-10-21	Advanced Technology Materials, Inc.	Method of making a single crystals Ga*N article
JP3344441B2 (ja) *	1994-03-25	2002-11-11	住友電気工業株式会社	表面弾性波素子
EP0930702B1 (de) *	1994-03-25	2003-07-09	Sumitomo Electric Industries, Ltd.	Orientierbares Material und Oberflächenwellenanordnung
US6028020A (en) *	1994-12-05	2000-02-22	Sumitomo Electric Industries, Ltd.	Single crystal quartz thin film and preparation thereof
US5653800A (en) *	1995-08-03	1997-08-05	Eneco, Inc.	Method for producing N-type semiconducting diamond
SE9600199D0 (sv) *	1996-01-19	1996-01-19	Abb Research Ltd	A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
KR20000068738A (ko) *	1997-08-13	2000-11-25	모리시타 요이찌	반도체기판 및 반도체소자
US6891236B1 (en) *	1999-01-14	2005-05-10	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method of fabricating the same
JP4294140B2 (ja) *	1999-01-27	2009-07-08	有限会社アプライドダイヤモンド	ダイヤモンド薄膜の改質方法及びダイヤモンド薄膜の改質及び薄膜形成方法並びにダイヤモンド薄膜の加工方法
EP2270875B1 (de)	2000-04-26	2018-01-10	OSRAM Opto Semiconductors GmbH	Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren
DE10051465A1 (de) *	2000-10-17	2002-05-02	Osram Opto Semiconductors Gmbh	Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
US7319247B2 (en)	2000-04-26	2008-01-15	Osram Gmbh	Light emitting-diode chip and a method for producing same
TWI289944B (en)	2000-05-26	2007-11-11	Osram Opto Semiconductors Gmbh	Light-emitting-diode-element with a light-emitting-diode-chip
US7358159B2 (en) *	2001-04-04	2008-04-15	Nippon Mining & Metals Co., Ltd.	Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device
US7033912B2 (en)	2004-01-22	2006-04-25	Cree, Inc.	Silicon carbide on diamond substrates and related devices and methods
US7612390B2 (en) *	2004-02-05	2009-11-03	Cree, Inc.	Heterojunction transistors including energy barriers
US7294324B2 (en) *	2004-09-21	2007-11-13	Cree, Inc.	Low basal plane dislocation bulk grown SiC wafers
US8129733B2 (en) *	2005-01-26	2012-03-06	Apollo Diamond, Inc	Gallium nitride light emitting devices on diamond
US7422634B2 (en) *	2005-04-07	2008-09-09	Cree, Inc.	Three inch silicon carbide wafer with low warp, bow, and TTV
US7709269B2 (en)	2006-01-17	2010-05-04	Cree, Inc.	Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en)	2006-01-17	2009-09-22	Cree, Inc.	Methods of fabricating transistors including supported gate electrodes
US7498191B2 (en) *	2006-05-22	2009-03-03	Chien-Min Sung	Semiconductor-on-diamond devices and associated methods
US7557378B2 (en) *	2006-11-08	2009-07-07	Raytheon Company	Boron aluminum nitride diamond heterostructure
US8853745B2 (en) *	2009-01-20	2014-10-07	Raytheon Company	Silicon based opto-electric circuits
US7994550B2 (en) *	2009-05-22	2011-08-09	Raytheon Company	Semiconductor structures having both elemental and compound semiconductor devices on a common substrate
US8183086B2 (en) *	2009-06-16	2012-05-22	Chien-Min Sung	Diamond GaN devices and associated methods
US8212294B2 (en) *	2010-01-28	2012-07-03	Raytheon Company	Structure having silicon CMOS transistors with column III-V transistors on a common substrate
US8389348B2 (en) *	2010-09-14	2013-03-05	Taiwan Semiconductor Manufacturing Company, Ltd.	Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
KR20150006837A (ko) *	2012-05-08	2015-01-19	신에쓰 가가꾸 고교 가부시끼가이샤	방열 기판 및 그 제조 방법
US9259818B2 (en) *	2012-11-06	2016-02-16	Sinmat, Inc.	Smooth diamond surfaces and CMP method for forming
US8823146B1 (en) *	2013-02-19	2014-09-02	Raytheon Company	Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
CN105669030B (zh) *	2016-01-21	2018-07-20	建德市天一玻璃制品有限公司	大红水晶钻及其加工方法
CN114628229A (zh) *	2020-12-11	2022-06-14	中国科学院微电子研究所	一种多层半导体材料结构及制备方法
CN112750690A (zh) *	2021-01-18	2021-05-04	西安电子科技大学	金刚石衬底上的N极性面GaN/InAlN异质结及制备方法

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US3630679A (en) *	1968-06-26	1971-12-28	Univ Case Western Reserve	Diamond growth process
US4028149A (en) *	1976-06-30	1977-06-07	Ibm Corporation	Process for forming monocrystalline silicon carbide on silicon substrates
JPS6014000B2 (ja) *	1977-05-25	1985-04-10	シャープ株式会社	炭化硅素基板の製造方法
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JPS5837713B2 (ja) *	1978-12-01	1983-08-18	富士通株式会社	半導体レ−ザ−装置の製造方法
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JPS59213126A (ja) *	1983-05-19	1984-12-03	Sumitomo Electric Ind Ltd	ダイヤモンド半導体素子の製造法
US4762806A (en) *	1983-12-23	1988-08-09	Sharp Kabushiki Kaisha	Process for producing a SiC semiconductor device
US4661176A (en) *	1985-02-27	1987-04-28	The United States Of America As Represented By The Secretary Of The Air Force	Process for improving the quality of epitaxial silicon films grown on insulating substrates utilizing oxygen ion conductor substrates
JPS61236687A (ja) *	1985-04-10	1986-10-21	Matsushita Electric Ind Co Ltd	ダイヤモンド部品
JPS61251158A (ja) *	1985-04-30	1986-11-08	Sumitomo Electric Ind Ltd	放熱基板
JPS623095A (ja) *	1985-06-07	1987-01-09	モリソン・パンプス・エスエイ・（プロプライアタリ−）・リミテツド	結晶生長法
US4751554A (en) *	1985-09-27	1988-06-14	Rca Corporation	Silicon-on-sapphire integrated circuit and method of making the same
EP0221531A3 (de) *	1985-11-06	1992-02-19	Kanegafuchi Kagaku Kogyo Kabushiki Kaisha	Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren
FR2616272B1 (fr) *	1987-06-02	1990-10-26	Thomson Csf	Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation

1988
- 1988-03-09 US US07/165,734 patent/US5373171A/en not_active Expired - Lifetime
- 1988-03-11 EP EP94106060A patent/EP0619599B1/de not_active Expired - Lifetime
- 1988-03-11 DE DE3852960T patent/DE3852960T2/de not_active Expired - Lifetime
- 1988-03-11 DE DE3856278T patent/DE3856278T2/de not_active Expired - Fee Related
- 1988-03-11 EP EP88103887A patent/EP0282075B1/de not_active Expired - Lifetime
- 1988-03-11 DE DE3856475T patent/DE3856475T2/de not_active Expired - Lifetime
- 1988-03-11 EP EP94111001A patent/EP0635874B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0282075A2 (de)	1988-09-14
DE3856278D1 (de)	1999-01-14
DE3852960T2 (de)	1995-07-06
EP0619599A1 (de)	1994-10-12
DE3852960D1 (de)	1995-03-23
EP0619599B1 (de)	2001-06-06
DE3856278T2 (de)	1999-05-20
US5373171A (en)	1994-12-13
EP0635874B1 (de)	1998-12-02
EP0282075A3 (en)	1990-02-28
EP0635874A1 (de)	1995-01-25
EP0282075B1 (de)	1995-02-08
DE3856475T2 (de)	2001-11-08

Publication	Publication Date	Title
DE3856278D1 (de)	1999-01-14	Monokristallines Dünnschichtsubstrat
KR880002268A (ko)	1988-04-30	박막 형성장치
KR890015366A (ko)	1989-10-30	반도체 박막형성법
DE3686605D1 (de)	1992-10-08	Photovoltaische duennfilmvorrichtung.
BR8707325A (pt)	1988-09-13	Pelicula selaveis
KR890700786A (ko)	1989-04-27	반사성 필름
KR970008455B1 (en)	1997-05-24	Thin film transistor
DE68926365D1 (de)	1996-06-05	Elektrolumineszentes Dünnschichtpaneel
EP0276002A3 (en)	1990-08-29	Thin film transistor
MX163513B (es)	1992-05-25	Casete de pelicula
DE3752021D1 (de)	1997-03-27	Filmpackung
EP0301571A3 (en)	1990-01-03	Thin film transistor array
DE3788134D1 (de)	1993-12-16	Dünnfilmanordnung.
KR880700738A (ko)	1988-04-12	박막형성장치
DE3883188D1 (de)	1993-09-16	Duennfilm-halbleiteranordung.
KR900009800A (ko)	1990-07-05	광학 필름
DE3681056D1 (de)	1991-10-02	Weichmagnetischer duenner film.
GB8704714D0 (en)	1987-04-01	Thin film transistors
DE3864160D1 (de)	1991-09-19	Klebstoffilm.
FI893573L (fi)	1990-01-30	Ohutkalvoelektroluminesenssilaite
DE3680213D1 (de)	1991-08-22	Amorpher weichmagnetischer duenner film.
GB2195823B (en)	1990-01-10	Thin film electroluminescent device
DK643688D0 (da)	1988-11-17	Bloedlodbar tyndfilm i en en- eller flerlaget metallisering
KR910011569U (ko)	1991-07-29	박막증착장치
KR900012120A (ko)	1990-08-03	박막장치

Legal Events

Date	Code	Title	Description
2002-07-04	8364	No opposition during term of opposition
2004-11-11	8320	Willingness to grant licences declared (paragraph 23)