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DE3850309D1 - Hochfrequenz-Bipolartransistor und dessen Herstellungsverfahren. - Google Patents

Hochfrequenz-Bipolartransistor und dessen Herstellungsverfahren.

Info

Publication number
DE3850309D1
DE3850309D1 DE3850309T DE3850309T DE3850309D1 DE 3850309 D1 DE3850309 D1 DE 3850309D1 DE 3850309 T DE3850309 T DE 3850309T DE 3850309 T DE3850309 T DE 3850309T DE 3850309 D1 DE3850309 D1 DE 3850309D1
Authority
DE
Germany
Prior art keywords
manufacturing process
bipolar transistor
frequency bipolar
frequency
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850309T
Other languages
English (en)
Other versions
DE3850309T2 (de
Inventor
Yorito Ota
Masanori Inada
Manabu Yanagihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62186181A external-priority patent/JPH0824126B2/ja
Priority claimed from JP62186176A external-priority patent/JPH0824125B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE3850309D1 publication Critical patent/DE3850309D1/de
Application granted granted Critical
Publication of DE3850309T2 publication Critical patent/DE3850309T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
DE3850309T 1987-07-24 1988-07-22 Hochfrequenz-Bipolartransistor und dessen Herstellungsverfahren. Expired - Fee Related DE3850309T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62186181A JPH0824126B2 (ja) 1987-07-24 1987-07-24 バイポ−ラトランジスタおよびその製造方法
JP62186176A JPH0824125B2 (ja) 1987-07-24 1987-07-24 バイポ−ラトランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
DE3850309D1 true DE3850309D1 (de) 1994-07-28
DE3850309T2 DE3850309T2 (de) 1995-01-19

Family

ID=26503595

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850309T Expired - Fee Related DE3850309T2 (de) 1987-07-24 1988-07-22 Hochfrequenz-Bipolartransistor und dessen Herstellungsverfahren.

Country Status (3)

Country Link
US (1) US5147775A (de)
EP (1) EP0300803B1 (de)
DE (1) DE3850309T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4967254A (en) * 1987-07-16 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
KR930007190B1 (ko) * 1990-08-21 1993-07-31 삼성전자 주식회사 화합물 반도체 장치
US5446294A (en) * 1991-07-31 1995-08-29 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5266505A (en) * 1992-12-22 1993-11-30 International Business Machines Corporation Image reversal process for self-aligned implants in planar epitaxial-base bipolar transistors
FR2706080B1 (fr) * 1993-06-04 1995-07-21 Thomson Csf Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré.
US5683919A (en) * 1994-11-14 1997-11-04 Texas Instruments Incorporated Transistor and circuit incorporating same
US5939738A (en) * 1995-10-25 1999-08-17 Texas Instruments Incorporated Low base-resistance bipolar transistor
US5716859A (en) * 1995-12-22 1998-02-10 The Whitaker Corporation Method of fabricating a silicon BJT
FR2764118B1 (fr) * 1997-05-30 2000-08-04 Thomson Csf Transistor bipolaire stabilise avec elements isolants electriques
JP3262056B2 (ja) 1997-12-22 2002-03-04 日本電気株式会社 バイポーラトランジスタとその製造方法
FR2803102B1 (fr) 1999-12-23 2002-03-22 Thomson Csf Transistor bipolaire a heterojonction a collecteur en haut et procede de realisation
US6927476B2 (en) 2001-09-25 2005-08-09 Internal Business Machines Corporation Bipolar device having shallow junction raised extrinsic base and method for making the same
US8557654B2 (en) * 2010-12-13 2013-10-15 Sandisk 3D Llc Punch-through diode
JP2015073001A (ja) * 2013-10-02 2015-04-16 三菱電機株式会社 半導体素子
US9865714B2 (en) * 2016-04-06 2018-01-09 International Business Machines Corporation III-V lateral bipolar junction transistor
US10332972B2 (en) * 2017-11-20 2019-06-25 International Business Machines Corporation Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface
EP4002481A1 (de) 2020-11-19 2022-05-25 Imec VZW Bipolarer transistor mit niedrigem parasitären ccb-heteroübergang

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
JPS607771A (ja) * 1983-06-28 1985-01-16 Toshiba Corp 半導体装置
JPS6095966A (ja) * 1983-10-31 1985-05-29 Fujitsu Ltd ヘテロ接合バイポ−ラトランジスタとその製造方法
EP0172878B1 (de) * 1984-02-03 1992-07-15 Advanced Micro Devices, Inc. Bipolartransistor mit in schlitzen gebildeten aktiven elementen
JPS6191959A (ja) * 1984-10-12 1986-05-10 Sony Corp ヘテロ接合型トランジスタ
JPH0744182B2 (ja) * 1984-11-09 1995-05-15 株式会社日立製作所 ヘテロ接合バイポ−ラ・トランジスタ
JPS61182257A (ja) * 1985-02-08 1986-08-14 Nec Corp ヘテロ接合バイポ−ラトランジスタ
JPS6281759A (ja) * 1985-10-05 1987-04-15 Fujitsu Ltd ヘテロ接合型バイポ−ラ・トランジスタ構造
JPS62117369A (ja) * 1985-11-18 1987-05-28 Fujitsu Ltd ヘテロ接合バイポ−ラトランジスタ

Also Published As

Publication number Publication date
EP0300803A2 (de) 1989-01-25
EP0300803B1 (de) 1994-06-22
EP0300803A3 (en) 1990-05-16
US5147775A (en) 1992-09-15
DE3850309T2 (de) 1995-01-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee