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DE3850285D1 - Verfahren zur Herstellung von dünnen supraleitenden Schichten. - Google Patents

Verfahren zur Herstellung von dünnen supraleitenden Schichten.

Info

Publication number
DE3850285D1
DE3850285D1 DE3850285T DE3850285T DE3850285D1 DE 3850285 D1 DE3850285 D1 DE 3850285D1 DE 3850285 T DE3850285 T DE 3850285T DE 3850285 T DE3850285 T DE 3850285T DE 3850285 D1 DE3850285 D1 DE 3850285D1
Authority
DE
Germany
Prior art keywords
production
superconducting layers
thin superconducting
thin
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850285T
Other languages
English (en)
Other versions
DE3850285T2 (de
Inventor
Shuichi C O Nissin Elec Nogawa
Eiji C O Nissin Electri Kamijo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Application granted granted Critical
Publication of DE3850285D1 publication Critical patent/DE3850285D1/de
Publication of DE3850285T2 publication Critical patent/DE3850285T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE3850285T 1987-03-27 1988-03-25 Verfahren zur Herstellung von dünnen supraleitenden Schichten. Expired - Fee Related DE3850285T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62075583A JPS63241823A (ja) 1987-03-27 1987-03-27 超電導薄膜の製造方法

Publications (2)

Publication Number Publication Date
DE3850285D1 true DE3850285D1 (de) 1994-07-28
DE3850285T2 DE3850285T2 (de) 1994-09-29

Family

ID=13580358

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850285T Expired - Fee Related DE3850285T2 (de) 1987-03-27 1988-03-25 Verfahren zur Herstellung von dünnen supraleitenden Schichten.

Country Status (4)

Country Link
US (1) US4920094A (de)
EP (1) EP0285030B1 (de)
JP (1) JPS63241823A (de)
DE (1) DE3850285T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2711253B2 (ja) * 1987-03-18 1998-02-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 超伝導膜及びその形成方法
US5175140A (en) * 1987-03-19 1992-12-29 Sumitomo Electric Industries, Ltd. High Tc superconducting material
JP2606698B2 (ja) * 1987-03-23 1997-05-07 株式会社 半導体エネルギー研究所 超電導セラミツクスの作製方法
JP2594271B2 (ja) * 1987-04-03 1997-03-26 松下電器産業株式会社 超電導体用薄膜の製造装置および超電導体用薄膜の製造方法
DE3854238T2 (de) * 1987-04-08 1996-03-21 Hitachi Ltd Verfahren zur Herstellung eines supraleitenden Elements.
JP2521950B2 (ja) * 1987-04-20 1996-08-07 日新電機株式会社 超電導薄膜の製造方法
DE3815185A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung einer hybridstruktur mit halbleitendem und supraleitendem material
JPH01102975A (ja) * 1987-10-16 1989-04-20 Sumitomo Cement Co Ltd 超電導セラミックスの製法
JPH01252573A (ja) * 1987-12-09 1989-10-09 Mitsubishi Metal Corp 超電導膜形成用ターゲット材
DE68922734T2 (de) * 1988-03-16 1995-09-14 Toshiba Kawasaki Kk VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS.
JPH01261204A (ja) * 1988-04-11 1989-10-18 Fujikura Ltd 酸化物系超電導体の製造方法
JPH01270581A (ja) * 1988-04-21 1989-10-27 Mitsubishi Metal Corp Ｂｉ−Ｃａ−Ｓｒ−Ｃｕ−Ｏ系超電導膜形成用ターゲット材の製造法
JPH02310363A (ja) * 1989-05-24 1990-12-26 Mitsubishi Electric Corp レーザ蒸着装置
AU7653391A (en) * 1990-03-16 1991-10-10 Conductus, Inc. High temperature superconducting films on aluminum oxide substrates
US5145713A (en) * 1990-12-21 1992-09-08 Bell Communications Research, Inc. Stoichiometric growth of compounds with volatile components
DE69331538T2 (de) * 1992-12-01 2002-08-29 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung einer elektrischen Dünnschicht
FR2699164B1 (fr) * 1992-12-11 1995-02-24 Saint Gobain Vitrage Int Procédé de traitement de couches minces à base d'oxyde ou de nitrure métallique.
US5637188A (en) * 1995-02-17 1997-06-10 Colorado Seminary Processing substrates with a photon-enhanced neutral beam
GB9519546D0 (en) * 1995-09-25 1995-11-29 Gec Marconi Avionics Holdings Depositing optical coatings
US6296741B1 (en) * 1999-06-25 2001-10-02 International Business Machines Corporation Method of making oxide barrier layer for a spin tunnel junction
US6488821B2 (en) 2001-03-16 2002-12-03 4 Wave Inc. System and method for performing sputter deposition using a divergent ion beam source and a rotating substrate
EP1419538B1 (de) * 2001-07-31 2007-03-07 American Superconductor Corporation Verfahren und reaktoren zur herstellung von supraleiterschichten
US6716545B1 (en) * 2001-11-21 2004-04-06 The Regents Of The University Of California High temperature superconducting composite conductors
US20050065035A1 (en) * 2003-06-10 2005-03-24 Rupich Martin W. Superconductor methods and reactors
US20090020415A1 (en) * 2007-07-16 2009-01-22 Michael Gutkin "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source
KR101124492B1 (ko) * 2009-09-09 2012-03-16 한국과학기술연구원 리튬전지용 양극 활물질의 제조방법
TWI402370B (zh) * 2010-06-11 2013-07-21 Ind Tech Res Inst 濺鍍含高蒸氣壓材料之鍍膜的方法與裝置
US20140147940A1 (en) * 2012-11-26 2014-05-29 Texas Instruments Incorporated Process-compatible sputtering target for forming ferroelectric memory capacitor plates
CN106884144A (zh) * 2017-03-20 2017-06-23 广东工业大学 n型CuO薄膜的制备方法、反型异质结
US20210404051A1 (en) * 2020-03-18 2021-12-30 Veeco Instruments, Inc. Ion beam deposition of a low resistivity metal

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2040315B (en) * 1978-12-13 1983-05-11 Glyco Metall Werke Laminar material or element and a process for its manufacture
JPS57145982A (en) * 1981-03-03 1982-09-09 Toshiba Corp Target for sputtering device
DE3149910A1 (de) * 1981-12-16 1983-06-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur kathodenzerstaeubung von mindestens zwei verschiedenen materialien
JPS59208815A (ja) * 1983-05-13 1984-11-27 Kyocera Corp マグネトロンスパツタリング装置における埋め込み式複合タ−ゲツト
JPS6089563A (ja) * 1983-10-20 1985-05-20 Matsushita Electric Ind Co Ltd 窒化ニオブ膜の製造方法
JPS61194786A (ja) * 1985-02-22 1986-08-29 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導体薄膜の熱処理方法
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
JPS63224116A (ja) * 1987-03-11 1988-09-19 Matsushita Electric Ind Co Ltd 薄膜超電導体の製造方法

Also Published As

Publication number Publication date
EP0285030A2 (de) 1988-10-05
EP0285030B1 (de) 1994-06-22
US4920094A (en) 1990-04-24
JPS63241823A (ja) 1988-10-07
DE3850285T2 (de) 1994-09-29
EP0285030A3 (en) 1990-03-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee