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DE3762295D1 - Halbleiterspeichereinrichtung mit redundanzschaltungsteil. - Google Patents

Halbleiterspeichereinrichtung mit redundanzschaltungsteil.

Info

Publication number
DE3762295D1
DE3762295D1 DE8787300721T DE3762295T DE3762295D1 DE 3762295 D1 DE3762295 D1 DE 3762295D1 DE 8787300721 T DE8787300721 T DE 8787300721T DE 3762295 T DE3762295 T DE 3762295T DE 3762295 D1 DE3762295 D1 DE 3762295D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
circuit part
redundancy circuit
redundancy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787300721T
Other languages
English (en)
Inventor
Isao Bira Hakuraku Fukushi
Yasuhiko Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61016050A external-priority patent/JPS62173700A/ja
Priority claimed from JP61031942A external-priority patent/JPS62217492A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3762295D1 publication Critical patent/DE3762295D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
DE8787300721T 1986-01-28 1987-01-28 Halbleiterspeichereinrichtung mit redundanzschaltungsteil. Expired - Lifetime DE3762295D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61016050A JPS62173700A (ja) 1986-01-28 1986-01-28 半導体記憶装置
JP61031942A JPS62217492A (ja) 1986-02-18 1986-02-18 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3762295D1 true DE3762295D1 (de) 1990-05-17

Family

ID=26352297

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787300721T Expired - Lifetime DE3762295D1 (de) 1986-01-28 1987-01-28 Halbleiterspeichereinrichtung mit redundanzschaltungsteil.

Country Status (4)

Country Link
US (1) US4757474A (de)
EP (1) EP0239196B1 (de)
KR (1) KR910000140B1 (de)
DE (1) DE3762295D1 (de)

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US6330687B1 (en) 1998-11-13 2001-12-11 Digi-Data Corporation System and method to maintain performance among N single raid systems during non-fault conditions while sharing multiple storage devices during conditions of a faulty host computer or faulty storage array controller
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US7102671B1 (en) 2000-02-08 2006-09-05 Lexar Media, Inc. Enhanced compact flash memory card
US6426893B1 (en) * 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
DE10126599C2 (de) * 2001-05-31 2003-12-18 Infineon Technologies Ag Speicherbaustein, Verfahren zum Aktivieren einer Speicherzelle und Verfahren zum Reparieren einer defekten Speicherzelle
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EP1695304A4 (de) 2003-12-17 2011-09-28 Lexar Media Inc Point-of-sale-aktivierung elektronischer geräte zur vermeidung von diebstahl
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CN102360568B (zh) * 2011-08-24 2014-08-20 北京兆易创新科技股份有限公司 一种并行异步存储器及其数据读取方法
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Also Published As

Publication number Publication date
KR870007520A (ko) 1987-08-19
EP0239196B1 (de) 1990-04-11
EP0239196A1 (de) 1987-09-30
KR910000140B1 (ko) 1991-01-21
US4757474A (en) 1988-07-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee