KR920003431B1
(ko)
*
|
1988-02-05 |
1992-05-01 |
가부시끼가이샤 한도다이 에네르기 겐뀨쇼 |
플라즈마 처리 방법 및 장치
|
GB8815782D0
(en)
*
|
1988-07-02 |
1988-08-10 |
Univ Liverpool |
Apparatus & method relating to plasma oxidiser
|
US4918031A
(en)
*
|
1988-12-28 |
1990-04-17 |
American Telephone And Telegraph Company,At&T Bell Laboratories |
Processes depending on plasma generation using a helical resonator
|
DE68924413T2
(de)
*
|
1989-01-25 |
1996-05-02 |
Ibm |
Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung.
|
US5122251A
(en)
*
|
1989-06-13 |
1992-06-16 |
Plasma & Materials Technologies, Inc. |
High density plasma deposition and etching apparatus
|
US5421891A
(en)
*
|
1989-06-13 |
1995-06-06 |
Plasma & Materials Technologies, Inc. |
High density plasma deposition and etching apparatus
|
US4948458A
(en)
*
|
1989-08-14 |
1990-08-14 |
Lam Research Corporation |
Method and apparatus for producing magnetically-coupled planar plasma
|
US6068784A
(en)
*
|
1989-10-03 |
2000-05-30 |
Applied Materials, Inc. |
Process used in an RF coupled plasma reactor
|
US5556501A
(en)
*
|
1989-10-03 |
1996-09-17 |
Applied Materials, Inc. |
Silicon scavenger in an inductively coupled RF plasma reactor
|
DE69128345T2
(de)
*
|
1990-01-04 |
1998-03-26 |
Mattson Tech Inc |
Induktiver plasmareaktor im unteren hochfrequenzbereich
|
US5155547A
(en)
*
|
1990-02-26 |
1992-10-13 |
Leco Corporation |
Power control circuit for inductively coupled plasma atomic emission spectroscopy
|
DE4022708A1
(de)
*
|
1990-07-17 |
1992-04-02 |
Balzers Hochvakuum |
Aetz- oder beschichtungsanlagen
|
DE4042417C2
(de)
*
|
1990-07-17 |
1993-11-25 |
Balzers Hochvakuum |
Ätz- oder Beschichtungsanlage sowie Verfahren zu ihrem Zünden oder intermittierenden Betreiben
|
US6251792B1
(en)
|
1990-07-31 |
2001-06-26 |
Applied Materials, Inc. |
Plasma etch processes
|
US6444137B1
(en)
|
1990-07-31 |
2002-09-03 |
Applied Materials, Inc. |
Method for processing substrates using gaseous silicon scavenger
|
US6545420B1
(en)
*
|
1990-07-31 |
2003-04-08 |
Applied Materials, Inc. |
Plasma reactor using inductive RF coupling, and processes
|
US20020004309A1
(en)
*
|
1990-07-31 |
2002-01-10 |
Kenneth S. Collins |
Processes used in an inductively coupled plasma reactor
|
JPH04362091A
(ja)
*
|
1991-06-05 |
1992-12-15 |
Mitsubishi Heavy Ind Ltd |
プラズマ化学気相成長装置
|
US6488807B1
(en)
|
1991-06-27 |
2002-12-03 |
Applied Materials, Inc. |
Magnetic confinement in a plasma reactor having an RF bias electrode
|
US6036877A
(en)
|
1991-06-27 |
2000-03-14 |
Applied Materials, Inc. |
Plasma reactor with heated source of a polymer-hardening precursor material
|
US6063233A
(en)
|
1991-06-27 |
2000-05-16 |
Applied Materials, Inc. |
Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
|
US6077384A
(en)
|
1994-08-11 |
2000-06-20 |
Applied Materials, Inc. |
Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
|
US5888414A
(en)
*
|
1991-06-27 |
1999-03-30 |
Applied Materials, Inc. |
Plasma reactor and processes using RF inductive coupling and scavenger temperature control
|
US6165311A
(en)
|
1991-06-27 |
2000-12-26 |
Applied Materials, Inc. |
Inductively coupled RF plasma reactor having an overhead solenoidal antenna
|
US6518195B1
(en)
|
1991-06-27 |
2003-02-11 |
Applied Materials, Inc. |
Plasma reactor using inductive RF coupling, and processes
|
US5480686A
(en)
*
|
1991-11-05 |
1996-01-02 |
Research Triangle Institute |
Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges
|
US5201995A
(en)
*
|
1992-03-16 |
1993-04-13 |
Mcnc |
Alternating cyclic pressure modulation process for selective area deposition
|
US5226967A
(en)
*
|
1992-05-14 |
1993-07-13 |
Lam Research Corporation |
Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
|
CH686254A5
(de)
*
|
1992-07-27 |
1996-02-15 |
Balzers Hochvakuum |
Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
|
DE4235064A1
(de)
*
|
1992-10-17 |
1994-04-21 |
Leybold Ag |
Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung
|
US6225744B1
(en)
|
1992-11-04 |
2001-05-01 |
Novellus Systems, Inc. |
Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil
|
US5346578A
(en)
*
|
1992-11-04 |
1994-09-13 |
Novellus Systems, Inc. |
Induction plasma source
|
US5309063A
(en)
*
|
1993-03-04 |
1994-05-03 |
David Sarnoff Research Center, Inc. |
Inductive coil for inductively coupled plasma production apparatus
|
US5391281A
(en)
*
|
1993-04-09 |
1995-02-21 |
Materials Research Corp. |
Plasma shaping plug for control of sputter etching
|
US5531834A
(en)
*
|
1993-07-13 |
1996-07-02 |
Tokyo Electron Kabushiki Kaisha |
Plasma film forming method and apparatus and plasma processing apparatus
|
US5865896A
(en)
|
1993-08-27 |
1999-02-02 |
Applied Materials, Inc. |
High density plasma CVD reactor with combined inductive and capacitive coupling
|
US5614055A
(en)
*
|
1993-08-27 |
1997-03-25 |
Applied Materials, Inc. |
High density plasma CVD and etching reactor
|
TW273067B
(de)
*
|
1993-10-04 |
1996-03-21 |
Tokyo Electron Co Ltd |
|
US5449432A
(en)
*
|
1993-10-25 |
1995-09-12 |
Applied Materials, Inc. |
Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication
|
JPH07161493A
(ja)
*
|
1993-12-08 |
1995-06-23 |
Fujitsu Ltd |
プラズマ発生装置及び方法
|
ATE251798T1
(de)
|
1994-04-28 |
2003-10-15 |
Applied Materials Inc |
Verfahren zum betreiben eines cvd-reaktors hoher plasma-dichte mit kombinierter induktiver und kapazitiver einkopplung
|
DE69506619T2
(de)
*
|
1994-06-02 |
1999-07-15 |
Applied Materials, Inc., Santa Clara, Calif. |
Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung der Plasmazündung
|
US5540800A
(en)
*
|
1994-06-23 |
1996-07-30 |
Applied Materials, Inc. |
Inductively coupled high density plasma reactor for plasma assisted materials processing
|
US5540824A
(en)
*
|
1994-07-18 |
1996-07-30 |
Applied Materials |
Plasma reactor with multi-section RF coil and isolated conducting lid
|
US5753044A
(en)
*
|
1995-02-15 |
1998-05-19 |
Applied Materials, Inc. |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
|
US5777289A
(en)
|
1995-02-15 |
1998-07-07 |
Applied Materials, Inc. |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
|
US5783101A
(en)
*
|
1994-09-16 |
1998-07-21 |
Applied Materials, Inc. |
High etch rate residue free metal etch process with low frequency high power inductive coupled plasma
|
DE69510427T2
(de)
|
1994-10-31 |
1999-12-30 |
Applied Materials, Inc. |
Plasmareaktoren zur Halbleiterscheibenbehandlung
|
US5607542A
(en)
*
|
1994-11-01 |
1997-03-04 |
Applied Materials Inc. |
Inductively enhanced reactive ion etching
|
US6291343B1
(en)
*
|
1994-11-14 |
2001-09-18 |
Applied Materials, Inc. |
Plasma annealing of substrates to improve adhesion
|
US6155198A
(en)
*
|
1994-11-14 |
2000-12-05 |
Applied Materials, Inc. |
Apparatus for constructing an oxidized film on a semiconductor wafer
|
US6699530B2
(en)
*
|
1995-07-06 |
2004-03-02 |
Applied Materials, Inc. |
Method for constructing a film on a semiconductor wafer
|
US5811022A
(en)
*
|
1994-11-15 |
1998-09-22 |
Mattson Technology, Inc. |
Inductive plasma reactor
|
JP3424867B2
(ja)
*
|
1994-12-06 |
2003-07-07 |
富士通株式会社 |
プラズマ処理装置及びプラズマ処理方法
|
JP3426382B2
(ja)
*
|
1995-01-24 |
2003-07-14 |
アネルバ株式会社 |
プラズマ処理装置
|
US5688357A
(en)
*
|
1995-02-15 |
1997-11-18 |
Applied Materials, Inc. |
Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
|
US6270617B1
(en)
|
1995-02-15 |
2001-08-07 |
Applied Materials, Inc. |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
|
US6224724B1
(en)
|
1995-02-23 |
2001-05-01 |
Tokyo Electron Limited |
Physical vapor processing of a surface with non-uniformity compensation
|
US6132564A
(en)
*
|
1997-11-17 |
2000-10-17 |
Tokyo Electron Limited |
In-situ pre-metallization clean and metallization of semiconductor wafers
|
US5688358A
(en)
*
|
1995-03-08 |
1997-11-18 |
Applied Materials, Inc. |
R.F. plasma reactor with larger-than-wafer pedestal conductor
|
US5759360A
(en)
*
|
1995-03-13 |
1998-06-02 |
Applied Materials, Inc. |
Wafer clean sputtering process
|
US5725740A
(en)
*
|
1995-06-07 |
1998-03-10 |
Applied Materials, Inc. |
Adhesion layer for tungsten deposition
|
US6238533B1
(en)
*
|
1995-08-07 |
2001-05-29 |
Applied Materials, Inc. |
Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
|
US5962923A
(en)
|
1995-08-07 |
1999-10-05 |
Applied Materials, Inc. |
Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
|
TW279240B
(en)
|
1995-08-30 |
1996-06-21 |
Applied Materials Inc |
Parallel-plate icp source/rf bias electrode head
|
US5597438A
(en)
*
|
1995-09-14 |
1997-01-28 |
Siemens Aktiengesellschaft |
Etch chamber having three independently controlled electrodes
|
US6264812B1
(en)
|
1995-11-15 |
2001-07-24 |
Applied Materials, Inc. |
Method and apparatus for generating a plasma
|
EP0799903A3
(de)
|
1996-04-05 |
1999-11-17 |
Applied Materials, Inc. |
Verfahren zum Sputtern eines Metalls auf ein Substrat und Vorrichtung zur Behandlung von Halbleitern
|
US6368469B1
(en)
*
|
1996-05-09 |
2002-04-09 |
Applied Materials, Inc. |
Coils for generating a plasma and for sputtering
|
KR100489918B1
(ko)
*
|
1996-05-09 |
2005-08-04 |
어플라이드 머티어리얼스, 인코포레이티드 |
플라즈마발생및스퍼터링용코일
|
US6254746B1
(en)
|
1996-05-09 |
2001-07-03 |
Applied Materials, Inc. |
Recessed coil for generating a plasma
|
US6254737B1
(en)
|
1996-10-08 |
2001-07-03 |
Applied Materials, Inc. |
Active shield for generating a plasma for sputtering
|
US6190513B1
(en)
|
1997-05-14 |
2001-02-20 |
Applied Materials, Inc. |
Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
|
US6514390B1
(en)
|
1996-10-17 |
2003-02-04 |
Applied Materials, Inc. |
Method to eliminate coil sputtering in an ICP source
|
US5961793A
(en)
*
|
1996-10-31 |
1999-10-05 |
Applied Materials, Inc. |
Method of reducing generation of particulate matter in a sputtering chamber
|
TW358964B
(en)
|
1996-11-21 |
1999-05-21 |
Applied Materials Inc |
Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
|
JPH10172792A
(ja)
*
|
1996-12-05 |
1998-06-26 |
Tokyo Electron Ltd |
プラズマ処理装置
|
US6599399B2
(en)
|
1997-03-07 |
2003-07-29 |
Applied Materials, Inc. |
Sputtering method to generate ionized metal plasma using electron beams and magnetic field
|
US5948215A
(en)
*
|
1997-04-21 |
1999-09-07 |
Tokyo Electron Limited |
Method and apparatus for ionized sputtering
|
US5800688A
(en)
*
|
1997-04-21 |
1998-09-01 |
Tokyo Electron Limited |
Apparatus for ionized sputtering
|
US6103070A
(en)
*
|
1997-05-14 |
2000-08-15 |
Applied Materials, Inc. |
Powered shield source for high density plasma
|
US6210539B1
(en)
|
1997-05-14 |
2001-04-03 |
Applied Materials, Inc. |
Method and apparatus for producing a uniform density plasma above a substrate
|
US6579426B1
(en)
|
1997-05-16 |
2003-06-17 |
Applied Materials, Inc. |
Use of variable impedance to control coil sputter distribution
|
US6652717B1
(en)
|
1997-05-16 |
2003-11-25 |
Applied Materials, Inc. |
Use of variable impedance to control coil sputter distribution
|
US6077402A
(en)
*
|
1997-05-16 |
2000-06-20 |
Applied Materials, Inc. |
Central coil design for ionized metal plasma deposition
|
US6361661B2
(en)
|
1997-05-16 |
2002-03-26 |
Applies Materials, Inc. |
Hybrid coil design for ionized deposition
|
US6504126B2
(en)
|
1997-06-30 |
2003-01-07 |
Applied Materials, Inc. |
Plasma reactor with coil antenna of concentrically spiral conductors with ends in common regions
|
US6235169B1
(en)
|
1997-08-07 |
2001-05-22 |
Applied Materials, Inc. |
Modulated power for ionized metal plasma deposition
|
US6375810B2
(en)
|
1997-08-07 |
2002-04-23 |
Applied Materials, Inc. |
Plasma vapor deposition with coil sputtering
|
US6345588B1
(en)
|
1997-08-07 |
2002-02-12 |
Applied Materials, Inc. |
Use of variable RF generator to control coil voltage distribution
|
US6565717B1
(en)
|
1997-09-15 |
2003-05-20 |
Applied Materials, Inc. |
Apparatus for sputtering ionized material in a medium to high density plasma
|
US6042700A
(en)
*
|
1997-09-15 |
2000-03-28 |
Applied Materials, Inc. |
Adjustment of deposition uniformity in an inductively coupled plasma source
|
US6023038A
(en)
*
|
1997-09-16 |
2000-02-08 |
Applied Materials, Inc. |
Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
|
US7253109B2
(en)
*
|
1997-11-26 |
2007-08-07 |
Applied Materials, Inc. |
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
|
KR20010032498A
(ko)
*
|
1997-11-26 |
2001-04-25 |
조셉 제이. 스위니 |
손상없는 스컵쳐 코팅 증착
|
US20050272254A1
(en)
*
|
1997-11-26 |
2005-12-08 |
Applied Materials, Inc. |
Method of depositing low resistivity barrier layers for copper interconnects
|
US6280579B1
(en)
|
1997-12-19 |
2001-08-28 |
Applied Materials, Inc. |
Target misalignment detector
|
JP4256587B2
(ja)
|
1998-04-13 |
2009-04-22 |
東京エレクトロン株式会社 |
低減インピーダンスチャンバ
|
US6146508A
(en)
*
|
1998-04-22 |
2000-11-14 |
Applied Materials, Inc. |
Sputtering method and apparatus with small diameter RF coil
|
US6080287A
(en)
*
|
1998-05-06 |
2000-06-27 |
Tokyo Electron Limited |
Method and apparatus for ionized physical vapor deposition
|
US6197165B1
(en)
|
1998-05-06 |
2001-03-06 |
Tokyo Electron Limited |
Method and apparatus for ionized physical vapor deposition
|
US6287435B1
(en)
|
1998-05-06 |
2001-09-11 |
Tokyo Electron Limited |
Method and apparatus for ionized physical vapor deposition
|
US6132566A
(en)
*
|
1998-07-30 |
2000-10-17 |
Applied Materials, Inc. |
Apparatus and method for sputtering ionized material in a plasma
|
US6217718B1
(en)
|
1999-02-17 |
2001-04-17 |
Applied Materials, Inc. |
Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
|
US6237526B1
(en)
|
1999-03-26 |
2001-05-29 |
Tokyo Electron Limited |
Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
|
US6474258B2
(en)
|
1999-03-26 |
2002-11-05 |
Tokyo Electron Limited |
Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
|
GB9930603D0
(en)
*
|
1999-12-24 |
2000-02-16 |
Surface Tech Sys Ltd |
Plasma process and apparatus
|
US6463873B1
(en)
*
|
2000-04-04 |
2002-10-15 |
Plasma Quest Limited |
High density plasmas
|
GB2361587B
(en)
|
2000-04-19 |
2003-11-26 |
Trikon Holdings Ltd |
Method of cooling an induction coil
|
US6401652B1
(en)
|
2000-05-04 |
2002-06-11 |
Applied Materials, Inc. |
Plasma reactor inductive coil antenna with flat surface facing the plasma
|
US6462481B1
(en)
|
2000-07-06 |
2002-10-08 |
Applied Materials Inc. |
Plasma reactor having a symmetric parallel conductor coil antenna
|
US6694915B1
(en)
|
2000-07-06 |
2004-02-24 |
Applied Materials, Inc |
Plasma reactor having a symmetrical parallel conductor coil antenna
|
US6414648B1
(en)
|
2000-07-06 |
2002-07-02 |
Applied Materials, Inc. |
Plasma reactor having a symmetric parallel conductor coil antenna
|
US6685798B1
(en)
|
2000-07-06 |
2004-02-03 |
Applied Materials, Inc |
Plasma reactor having a symmetrical parallel conductor coil antenna
|
US6409933B1
(en)
|
2000-07-06 |
2002-06-25 |
Applied Materials, Inc. |
Plasma reactor having a symmetric parallel conductor coil antenna
|
US6494998B1
(en)
|
2000-08-30 |
2002-12-17 |
Tokyo Electron Limited |
Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
|
US6537421B2
(en)
|
2001-07-24 |
2003-03-25 |
Tokyo Electron Limited |
RF bias control in plasma deposition and etch systems with multiple RF power sources
|
US6770521B2
(en)
*
|
2001-11-30 |
2004-08-03 |
Texas Instruments Incorporated |
Method of making multiple work function gates by implanting metals with metallic alloying additives
|
US7169440B2
(en)
*
|
2002-04-16 |
2007-01-30 |
Tokyo Electron Limited |
Method for removing photoresist and etch residues
|
US20030203123A1
(en)
*
|
2002-04-26 |
2003-10-30 |
Applied Materials, Inc. |
System and method for metal induced crystallization of polycrystalline thin film transistors
|
US7557362B2
(en)
*
|
2004-02-04 |
2009-07-07 |
Veeco Instruments Inc. |
Ion sources and methods for generating an ion beam with a controllable ion current density distribution
|
US8158016B2
(en)
*
|
2004-02-04 |
2012-04-17 |
Veeco Instruments, Inc. |
Methods of operating an electromagnet of an ion source
|
US7232767B2
(en)
*
|
2003-04-01 |
2007-06-19 |
Mattson Technology, Inc. |
Slotted electrostatic shield modification for improved etch and CVD process uniformity
|
US7556699B2
(en)
*
|
2004-06-17 |
2009-07-07 |
Cooper Clark Vantine |
Method of plasma nitriding of metals via nitrogen charging
|
US7700494B2
(en)
*
|
2004-12-30 |
2010-04-20 |
Tokyo Electron Limited, Inc. |
Low-pressure removal of photoresist and etch residue
|
WO2008147306A1
(en)
*
|
2007-05-15 |
2008-12-04 |
Arcam Ab |
Method and device for producing three-dimensional objects
|
US8396704B2
(en)
*
|
2007-10-24 |
2013-03-12 |
Red Shift Company, Llc |
Producing time uniform feature vectors
|
US20090238985A1
(en)
*
|
2008-03-24 |
2009-09-24 |
Chau Hugh D |
Systems and methods for deposition
|
JP5164107B2
(ja)
*
|
2008-07-01 |
2013-03-13 |
株式会社ユーテック |
プラズマcvd装置、薄膜の製造方法及び磁気記録媒体の製造方法
|
US8703001B1
(en)
|
2008-10-02 |
2014-04-22 |
Sarpangala Hari Harakeshava Hegde |
Grid assemblies for use in ion beam etching systems and methods of utilizing the grid assemblies
|
US20100096254A1
(en)
*
|
2008-10-22 |
2010-04-22 |
Hari Hegde |
Deposition systems and methods
|
US8426763B2
(en)
|
2009-04-23 |
2013-04-23 |
Micron Technology, Inc. |
Rapid thermal processing systems and methods for treating microelectronic substrates
|
US10475626B2
(en)
|
2015-03-17 |
2019-11-12 |
Applied Materials, Inc. |
Ion-ion plasma atomic layer etch process and reactor
|
US20180277340A1
(en)
*
|
2017-03-24 |
2018-09-27 |
Yang Yang |
Plasma reactor with electron beam of secondary electrons
|
US10544505B2
(en)
*
|
2017-03-24 |
2020-01-28 |
Applied Materials, Inc. |
Deposition or treatment of diamond-like carbon in a plasma reactor
|
US20190259559A1
(en)
*
|
2018-02-20 |
2019-08-22 |
Veeco Instruments, Inc. |
Plasma bridge neutralizer for ion beam etching
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