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DE3684539D1 - Herstellungsverfahren einer halbleitervorrichtung. - Google Patents

Herstellungsverfahren einer halbleitervorrichtung.

Info

Publication number
DE3684539D1
DE3684539D1 DE8686201493T DE3684539T DE3684539D1 DE 3684539 D1 DE3684539 D1 DE 3684539D1 DE 8686201493 T DE8686201493 T DE 8686201493T DE 3684539 T DE3684539 T DE 3684539T DE 3684539 D1 DE3684539 D1 DE 3684539D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686201493T
Other languages
English (en)
Inventor
Gordon Peter C O Mullard Burns
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB8522195A external-priority patent/GB2179930A/en
Priority claimed from GB8530053A external-priority patent/GB2183679A/en
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3684539D1 publication Critical patent/DE3684539D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
DE8686201493T 1985-09-06 1986-09-01 Herstellungsverfahren einer halbleitervorrichtung. Expired - Lifetime DE3684539D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8522195A GB2179930A (en) 1985-09-06 1985-09-06 A method of depositing an epitaxial silicon layer
GB8530053A GB2183679A (en) 1985-12-06 1985-12-06 A method of depositing an epitaxial silicon layer

Publications (1)

Publication Number Publication Date
DE3684539D1 true DE3684539D1 (de) 1992-04-30

Family

ID=26289740

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686201493T Expired - Lifetime DE3684539D1 (de) 1985-09-06 1986-09-01 Herstellungsverfahren einer halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US5011789A (de)
EP (1) EP0214690B1 (de)
JP (1) JPH0736387B2 (de)
DE (1) DE3684539D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221412A (en) * 1989-09-26 1993-06-22 Toagosei Chemical Industry Co., Ltd. Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film
CA2031253A1 (en) * 1989-12-01 1991-06-02 Kenji Aoki Method of producing bipolar transistor
EP0505877A2 (de) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Dotierungsverfahren mittels einer adsorbierten Diffusionsquelle
US5198071A (en) * 1991-11-25 1993-03-30 Applied Materials, Inc. Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer
US5227331A (en) * 1992-02-10 1993-07-13 Micron Technology, Inc. CVD method for semiconductor manufacture using rapid thermal pulses
US5716862A (en) * 1993-05-26 1998-02-10 Micron Technology, Inc. High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS
US5425392A (en) * 1993-05-26 1995-06-20 Micron Semiconductor, Inc. Method DRAM polycide rowline formation
JP3386651B2 (ja) 1996-04-03 2003-03-17 株式会社東芝 半導体装置の製造方法および半導体製造装置
EP1036407A1 (de) 1997-11-03 2000-09-20 ASM America, Inc. Verarbeitungsverfahren für wafer mit kleinmassigem träger
US6749687B1 (en) * 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
FR2774509B1 (fr) * 1998-01-30 2001-11-16 Sgs Thomson Microelectronics Procede de depot d'une region de silicium monocristallin
US7108748B2 (en) * 2001-05-30 2006-09-19 Asm America, Inc. Low temperature load and bake
JP4052150B2 (ja) * 2003-03-05 2008-02-27 住友電気工業株式会社 窒化物系半導体装置の製造方法
JP3961503B2 (ja) * 2004-04-05 2007-08-22 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
US8278176B2 (en) * 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US20080289650A1 (en) * 2007-05-24 2008-11-27 Asm America, Inc. Low-temperature cleaning of native oxide
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
KR20090033788A (ko) * 2007-10-01 2009-04-06 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법과 기판 처리 장치
US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
JP6775276B2 (ja) 2019-03-15 2020-10-28 株式会社ソディック 静圧流体軸受装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1071412A (en) * 1963-02-14 1967-06-07 Texas Instruments Ltd Improvements in or relating to epitaxial deposition of silicon
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
JPS52120763A (en) * 1976-04-05 1977-10-11 Hitachi Ltd Silicon epitaxial growth method
JPS52154347A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Low temperature single crystal thin film growth method
US4277320A (en) * 1979-10-01 1981-07-07 Rockwell International Corporation Process for direct thermal nitridation of silicon semiconductor devices
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
JPS5832409A (ja) * 1981-08-20 1983-02-25 Seiko Epson Corp 単結晶Ｓｉ膜育成装置
US4435445A (en) * 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition
DE3375590D1 (en) * 1982-06-22 1988-03-10 Hughes Aircraft Co Low temperature process for depositing epitaxial layers
JPS5959876A (ja) * 1982-09-30 1984-04-05 Ushio Inc 光照射炉の運転方法
JPS5989407A (ja) * 1982-11-15 1984-05-23 Mitsui Toatsu Chem Inc アモルフアスシリコン膜の形成方法
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
US4544423A (en) * 1984-02-10 1985-10-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon semiconductor and process for same
US4640004A (en) * 1984-04-13 1987-02-03 Fairchild Camera & Instrument Corp. Method and structure for inhibiting dopant out-diffusion
US4579609A (en) * 1984-06-08 1986-04-01 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition
US4590091A (en) * 1984-12-17 1986-05-20 Hughes Aircraft Company Photochemical process for substrate surface preparation

Also Published As

Publication number Publication date
JPH0736387B2 (ja) 1995-04-19
EP0214690A2 (de) 1987-03-18
EP0214690A3 (en) 1989-01-18
EP0214690B1 (de) 1992-03-25
JPS62112319A (ja) 1987-05-23
US5011789A (en) 1991-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee