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DE3680926D1 - Bipolare halbleiteranordnung und verfahren zu ihrer herstellung. - Google Patents

Bipolare halbleiteranordnung und verfahren zu ihrer herstellung.

Info

Publication number
DE3680926D1
DE3680926D1 DE8686100574T DE3680926T DE3680926D1 DE 3680926 D1 DE3680926 D1 DE 3680926D1 DE 8686100574 T DE8686100574 T DE 8686100574T DE 3680926 T DE3680926 T DE 3680926T DE 3680926 D1 DE3680926 D1 DE 3680926D1
Authority
DE
Germany
Prior art keywords
production
semiconductor arrangement
bipolar semiconductor
bipolar
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686100574T
Other languages
English (en)
Inventor
Shigeru C O Patent Div Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3680926D1 publication Critical patent/DE3680926D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H01L21/28531—Making of side-wall contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
DE8686100574T 1985-01-17 1986-01-17 Bipolare halbleiteranordnung und verfahren zu ihrer herstellung. Expired - Lifetime DE3680926D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60006218A JPS61166071A (ja) 1985-01-17 1985-01-17 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
DE3680926D1 true DE3680926D1 (de) 1991-09-26

Family

ID=11632376

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686100574T Expired - Lifetime DE3680926D1 (de) 1985-01-17 1986-01-17 Bipolare halbleiteranordnung und verfahren zu ihrer herstellung.

Country Status (4)

Country Link
US (1) US4710241A (de)
EP (1) EP0188291B1 (de)
JP (1) JPS61166071A (de)
DE (1) DE3680926D1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857479A (en) * 1985-10-08 1989-08-15 Motorola Method of making poly-sidewall contact transistors
DE3545244A1 (de) * 1985-12-20 1987-06-25 Licentia Gmbh Strukturierter halbleiterkoerper
JPS63128750A (ja) * 1986-11-19 1988-06-01 Toshiba Corp 半導体装置
NL8700640A (nl) * 1987-03-18 1988-10-17 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4851362A (en) * 1987-08-25 1989-07-25 Oki Electric Industry Co., Ltd. Method for manufacturing a semiconductor device
US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
NL8800157A (nl) * 1988-01-25 1989-08-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US5234844A (en) * 1988-03-10 1993-08-10 Oki Electric Industry Co., Inc. Process for forming bipolar transistor structure
US5001533A (en) * 1988-12-22 1991-03-19 Kabushiki Kaisha Toshiba Bipolar transistor with side wall base contacts
JP2623812B2 (ja) * 1989-01-25 1997-06-25 日本電気株式会社 半導体装置の製造方法
US5101256A (en) * 1989-02-13 1992-03-31 International Business Machines Corporation Bipolar transistor with ultra-thin epitaxial base and method of fabricating same
GB8907898D0 (en) * 1989-04-07 1989-05-24 Inmos Ltd Semiconductor devices and fabrication thereof
USRE37424E1 (en) * 1989-06-14 2001-10-30 Stmicroelectronics S.R.L. Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
IT1235843B (it) * 1989-06-14 1992-11-03 Sgs Thomson Microelectronics Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.
US5177582A (en) * 1989-09-22 1993-01-05 Siemens Aktiengesellschaft CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same
US5061646A (en) * 1990-06-29 1991-10-29 Motorola, Inc. Method for forming a self-aligned bipolar transistor
KR920007211A (ko) * 1990-09-06 1992-04-28 김광호 고속 바이폴라 트랜지스터 및 그의 제조방법
US5376823A (en) * 1991-03-15 1994-12-27 Fujitsu Limited Lateral bipolar transistor and method of producing the same
JP3132101B2 (ja) * 1991-11-20 2001-02-05 日本電気株式会社 半導体装置の製造方法
US5321301A (en) * 1992-04-08 1994-06-14 Nec Corporation Semiconductor device
JP4150076B2 (ja) * 1996-03-29 2008-09-17 エヌエックスピー ビー ヴィ 半導体装置の製造方法
JPH10303195A (ja) * 1997-04-23 1998-11-13 Toshiba Corp 半導体装置の製造方法
US5904536A (en) * 1998-05-01 1999-05-18 National Semiconductor Corporation Self aligned poly emitter bipolar technology using damascene technique
US6225181B1 (en) 1999-04-19 2001-05-01 National Semiconductor Corp. Trench isolated bipolar transistor structure integrated with CMOS technology
US6043130A (en) * 1999-05-17 2000-03-28 National Semiconductor Corporation Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6262472B1 (en) 1999-05-17 2001-07-17 National Semiconductor Corporation Bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6313000B1 (en) 1999-11-18 2001-11-06 National Semiconductor Corporation Process for formation of vertically isolated bipolar transistor device
US6998305B2 (en) * 2003-01-24 2006-02-14 Asm America, Inc. Enhanced selectivity for epitaxial deposition
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA931665A (en) * 1970-08-10 1973-08-07 Motorola Polycrystalline silicon structures for integrated circuits
US4396933A (en) * 1971-06-18 1983-08-02 International Business Machines Corporation Dielectrically isolated semiconductor devices
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4381953A (en) * 1980-03-24 1983-05-03 International Business Machines Corporation Polysilicon-base self-aligned bipolar transistor process
JPS57126162A (en) * 1981-01-29 1982-08-05 Toshiba Corp Semiconductor device
JPS5856320A (ja) * 1981-09-29 1983-04-04 Nec Corp 気相成長方法
JPS58147040A (ja) * 1982-02-24 1983-09-01 Fujitsu Ltd 半導体装置
US4462847A (en) * 1982-06-21 1984-07-31 Texas Instruments Incorporated Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition
JPS5940571A (ja) * 1982-08-30 1984-03-06 Hitachi Ltd 半導体装置
JPS5945997A (ja) * 1982-09-03 1984-03-15 Nec Corp 半導体の気相成長方法
JPS59165455A (ja) * 1983-03-10 1984-09-18 Toshiba Corp 半導体装置
JPS59217364A (ja) * 1983-05-26 1984-12-07 Sony Corp 半導体装置の製法
JPS6016420A (ja) * 1983-07-08 1985-01-28 Mitsubishi Electric Corp 選択的エピタキシヤル成長方法
JPS60117613A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon

Also Published As

Publication number Publication date
US4710241A (en) 1987-12-01
EP0188291A2 (de) 1986-07-23
JPS61166071A (ja) 1986-07-26
EP0188291A3 (en) 1987-10-28
EP0188291B1 (de) 1991-08-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)