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DE3679108D1 - Halbleiteranordnungen. - Google Patents

Halbleiteranordnungen.

Info

Publication number
DE3679108D1
DE3679108D1 DE8686200991T DE3679108T DE3679108D1 DE 3679108 D1 DE3679108 D1 DE 3679108D1 DE 8686200991 T DE8686200991 T DE 8686200991T DE 3679108 T DE3679108 T DE 3679108T DE 3679108 D1 DE3679108 D1 DE 3679108D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangements
arrangements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686200991T
Other languages
English (en)
Inventor
Stephen John C O Mullard Mundy
John Martin C O Philip Shannon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3679108D1 publication Critical patent/DE3679108D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
DE8686200991T 1985-06-10 1986-06-09 Halbleiteranordnungen. Expired - Lifetime DE3679108D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08514628A GB2176339A (en) 1985-06-10 1985-06-10 Semiconductor device with schottky junctions

Publications (1)

Publication Number Publication Date
DE3679108D1 true DE3679108D1 (de) 1991-06-13

Family

ID=10580473

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686200991T Expired - Lifetime DE3679108D1 (de) 1985-06-10 1986-06-09 Halbleiteranordnungen.

Country Status (5)

Country Link
US (1) US4862229A (de)
EP (1) EP0205217B1 (de)
JP (1) JPH0734479B2 (de)
DE (1) DE3679108D1 (de)
GB (1) GB2176339A (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
JPH0817229B2 (ja) * 1988-03-31 1996-02-21 サンケン電気株式会社 半導体装置
JPH0618276B2 (ja) * 1988-11-11 1994-03-09 サンケン電気株式会社 半導体装置
CH676402A5 (en) * 1988-11-29 1991-01-15 Asea Brown Boveri Solid state pinch diode - has three zone structure with channel form and schottky electrode regions
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JP2513010B2 (ja) * 1988-12-27 1996-07-03 日本電気株式会社 半導体集積回路の入力保護装置
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
US5256889A (en) * 1989-09-20 1993-10-26 Hitachi, Ltd. Semiconductor rectifying diode with PN geometry
JP2829067B2 (ja) * 1989-12-11 1998-11-25 株式会社東芝 半導体装置
JPH065736B2 (ja) * 1989-12-15 1994-01-19 株式会社東芝 ショットキー・ダイオード
JP2590284B2 (ja) * 1990-02-28 1997-03-12 株式会社日立製作所 半導体装置及びその製造方法
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
US5262669A (en) * 1991-04-19 1993-11-16 Shindengen Electric Manufacturing Co., Ltd. Semiconductor rectifier having high breakdown voltage and high speed operation
JP2809253B2 (ja) * 1992-10-02 1998-10-08 富士電機株式会社 注入制御型ショットキーバリア整流素子
DE19737360C1 (de) * 1997-08-27 1999-01-21 Siemens Ag Hochfrequenzdiode und Verfahren zu deren Herstellung
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6066884A (en) * 1999-03-19 2000-05-23 Lucent Technologies Inc. Schottky diode guard ring structures
US6717229B2 (en) 2000-01-19 2004-04-06 Fabtech, Inc. Distributed reverse surge guard
WO2001054197A1 (en) * 2000-01-19 2001-07-26 Fabtech, Inc. Distributed reverse surge guard
US6525389B1 (en) * 2000-02-22 2003-02-25 International Rectifier Corporation High voltage termination with amorphous silicon layer below the field plate
US6699775B2 (en) * 2000-02-22 2004-03-02 International Rectifier Corporation Manufacturing process for fast recovery diode
US6486524B1 (en) * 2000-02-22 2002-11-26 International Rectifier Corporation Ultra low Irr fast recovery diode
DE10015884A1 (de) * 2000-03-30 2001-10-11 Philips Corp Intellectual Pty Schottky-Diode
US6653707B1 (en) * 2000-09-08 2003-11-25 Northrop Grumman Corporation Low leakage Schottky diode
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
US20020195613A1 (en) * 2001-04-02 2002-12-26 International Rectifier Corp. Low cost fast recovery diode and process of its manufacture
US6740951B2 (en) * 2001-05-22 2004-05-25 General Semiconductor, Inc. Two-mask trench schottky diode
DE102004056663A1 (de) * 2004-11-24 2006-06-01 Robert Bosch Gmbh Halbleitereinrichtung und Gleichrichteranordnung
JP4803211B2 (ja) * 2008-05-27 2011-10-26 トヨタ自動車株式会社 半導体装置
TW201034205A (en) * 2009-03-04 2010-09-16 Actron Technology Corp Rectifier used in high temperature application
US9263598B2 (en) * 2014-02-14 2016-02-16 Semiconductor Components Industries, Llc Schottky device and method of manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463366A (en) * 1980-06-20 1984-07-31 Nippon Telegraph & Telephone Public Corp. Field effect transistor with combination Schottky-junction gate
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS60143496A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd 半導体記憶装置
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions

Also Published As

Publication number Publication date
JPH0734479B2 (ja) 1995-04-12
GB8514628D0 (en) 1985-07-10
JPS61287266A (ja) 1986-12-17
EP0205217B1 (de) 1991-05-08
EP0205217A2 (de) 1986-12-17
US4862229A (en) 1989-08-29
GB2176339A (en) 1986-12-17
EP0205217A3 (en) 1988-01-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee