[go: up one dir, main page]

DE3588050D1 - Halbleiterspeichervorrichtung und Verfahren zu deren Herstellung. - Google Patents

Halbleiterspeichervorrichtung und Verfahren zu deren Herstellung.

Info

Publication number
DE3588050D1
DE3588050D1 DE3588050T DE3588050T DE3588050D1 DE 3588050 D1 DE3588050 D1 DE 3588050D1 DE 3588050 T DE3588050 T DE 3588050T DE 3588050 T DE3588050 T DE 3588050T DE 3588050 D1 DE3588050 D1 DE 3588050D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
memory device
semiconductor memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3588050T
Other languages
English (en)
Other versions
DE3588050T2 (de
Inventor
Masao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3588050D1 publication Critical patent/DE3588050D1/de
Application granted granted Critical
Publication of DE3588050T2 publication Critical patent/DE3588050T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE3588050T 1984-12-29 1985-12-20 Halbleiterspeichervorrichtung und Verfahren zu deren Herstellung. Expired - Lifetime DE3588050T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59279911A JPS61179568A (ja) 1984-12-29 1984-12-29 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
DE3588050D1 true DE3588050D1 (de) 1995-09-28
DE3588050T2 DE3588050T2 (de) 1996-01-18

Family

ID=17617629

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3588050T Expired - Lifetime DE3588050T2 (de) 1984-12-29 1985-12-20 Halbleiterspeichervorrichtung und Verfahren zu deren Herstellung.

Country Status (6)

Country Link
US (1) US5006910A (de)
EP (1) EP0187596B1 (de)
JP (1) JPS61179568A (de)
KR (1) KR900008649B1 (de)
CA (1) CA1261469A (de)
DE (1) DE3588050T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685427B2 (ja) * 1986-03-13 1994-10-26 三菱電機株式会社 半導体記憶装置
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US6028346A (en) * 1986-04-25 2000-02-22 Mitsubishi Denki Kabushiki Kaisha Isolated trench semiconductor device
JPS63124454A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置
JPH0810755B2 (ja) * 1986-10-22 1996-01-31 沖電気工業株式会社 半導体メモリの製造方法
US5250458A (en) * 1987-02-25 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor memory device having stacked memory capacitors
JPH0795568B2 (ja) * 1987-04-27 1995-10-11 日本電気株式会社 半導体記憶装置
JPH01287956A (ja) * 1987-07-10 1989-11-20 Toshiba Corp 半導体記憶装置およびその製造方法
JPH07105476B2 (ja) * 1987-09-29 1995-11-13 株式会社東芝 半導体記憶装置
US5258321A (en) * 1988-01-14 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Manufacturing method for semiconductor memory device having stacked trench capacitors and improved intercell isolation
KR910000246B1 (ko) * 1988-02-15 1991-01-23 삼성전자 주식회사 반도체 메모리장치
DE58909255D1 (de) * 1989-05-22 1995-06-29 Siemens Ag Halbleiterspeicheranordnung mit Kondensatoren mir zwei in einem Graben angeordneten Elektroden und Verfahren zu deren Herstellung.
US5701022A (en) * 1989-05-22 1997-12-23 Siemens Aktiengesellschaft Semiconductor memory device with trench capacitor
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
DE3932683A1 (de) * 1989-09-29 1991-04-11 Siemens Ag Verfahren zur herstellung eines grabenkondensators einer ein-transistor-speicherzelle in einem halbleitersubstrat mit einer selbstjustierten kondensator-gegenelektrode
JPH0449654A (ja) * 1990-06-19 1992-02-19 Nec Corp 半導体メモリ
US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
KR940006681B1 (ko) * 1991-10-12 1994-07-25 금성일렉트론 주식회사 스택트렌치 셀 및 그 제조방법
US5363327A (en) * 1993-01-19 1994-11-08 International Business Machines Corporation Buried-sidewall-strap two transistor one capacitor trench cell
US5998821A (en) * 1997-05-21 1999-12-07 Kabushiki Kaisha Toshiba Dynamic ram structure having a trench capacitor
KR100268907B1 (ko) * 1998-03-13 2000-11-01 김영환 반도체소자의격리막및이의형성방법
US6440794B1 (en) 1999-05-28 2002-08-27 International Business Machines Corporation Method for forming an array of DRAM cells by employing a self-aligned adjacent node isolation technique
US20030052365A1 (en) * 2001-09-18 2003-03-20 Samir Chaudhry Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
JP4969771B2 (ja) * 2004-07-12 2012-07-04 ソニー株式会社 固体撮像装置及びそのキャパシタ調整方法
JP6480300B2 (ja) 2015-10-16 2019-03-06 株式会社スギノマシン ノズル体を装着できる工作機械

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
JPS5797210A (en) * 1980-12-08 1982-06-16 Sanyo Electric Co Ltd Amplifier
JPS58220444A (ja) * 1982-06-16 1983-12-22 Toshiba Corp 半導体装置の製造方法
JPS5963757A (ja) * 1982-10-04 1984-04-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置
JPH0665225B2 (ja) * 1984-01-13 1994-08-22 株式会社東芝 半導体記憶装置の製造方法
JPS60152058A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体記憶装置
US4688063A (en) * 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
JPS6187358A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
KR860005443A (ko) 1986-07-23
JPH0365905B2 (de) 1991-10-15
EP0187596B1 (de) 1995-08-23
JPS61179568A (ja) 1986-08-12
US5006910A (en) 1991-04-09
KR900008649B1 (ko) 1990-11-26
DE3588050T2 (de) 1996-01-18
EP0187596A3 (en) 1987-01-07
CA1261469A (en) 1989-09-26
EP0187596A2 (de) 1986-07-16

Similar Documents

Publication Publication Date Title
DE3588050D1 (de) Halbleiterspeichervorrichtung und Verfahren zu deren Herstellung.
DE3586822D1 (de) Halbleiteranordnung und verfahren zu deren herstellung.
DE68922254D1 (de) Halbleiterspeicher und Verfahren zu deren Herstellung.
DE3769400D1 (de) Verkapselte halbleiteranordnung und verfahren zu deren herstellung.
DE3852782D1 (de) Mit Harz eingekapselte Halbleiteranordnung und Verfahren zu deren Herstellung.
DE3565339D1 (en) Semiconductor memory device and method of manufacturing the same
DE3381711D1 (de) Halbleiteranordnung und verfahren zu deren herstellung.
DE3685124D1 (de) Integriertes halbleiterschaltungsbauelement und verfahren zu seiner herstellung.
DE3679087D1 (de) Halbleitervorrichtung und verfahren zu seiner herstellung.
KR860005374A (ko) 판독전용 반도체기억장치 및 그 제조방법
KR880005624A (ko) 반도체메모리와 그 시험방법
KR860001495A (ko) 반도체장치 및 그 제조방법
DE3483709D1 (de) Halbleiterspeicher und verfahren zu seiner herstellung.
DE3571895D1 (en) Semiconductor memory device having stacked-capacitor type memory cells and manufacturing method for the same
DE68905267D1 (de) Halbleiteranordnung von metallhoecker-typ und verfahren zu deren herstellung.
DE3854455D1 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung.
DE68912722D1 (de) Halbleiterlaservorrichtung und Verfahren zu deren Herstellung.
DE3675741D1 (de) Vernetzte copolyamidimide und verfahren zu deren herstellung.
EP0273728A3 (en) Semiconductor memory device and method of manufacturing the same
KR840008214A (ko) 반도체장치 및 그 제조방법
KR870009477A (ko) 반도체장치와 그 제조방법
DE3579367D1 (de) Halbleiterphotodetektor und verfahren zu seiner herstellung.
DE3484825D1 (de) Halbleiterlaser-vorrichtung und verfahren zu deren herstellung.
DE3685969D1 (de) Integrierte schaltung mit halbleiterkondensator und verfahren zu ihrer herstellung.
KR890004398A (ko) 반도체장치 및 그의 제조방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition