DE3585901D1 - Verfahren und vorrichtung fuer gasstrahlniederschlag von leitfaehigen und dielektrischen duennen festfilmen und so hergestellte erzeugnisse. - Google Patents
Verfahren und vorrichtung fuer gasstrahlniederschlag von leitfaehigen und dielektrischen duennen festfilmen und so hergestellte erzeugnisse.Info
- Publication number
- DE3585901D1 DE3585901D1 DE8585901214T DE3585901T DE3585901D1 DE 3585901 D1 DE3585901 D1 DE 3585901D1 DE 8585901214 T DE8585901214 T DE 8585901214T DE 3585901 T DE3585901 T DE 3585901T DE 3585901 D1 DE3585901 D1 DE 3585901D1
- Authority
- DE
- Germany
- Prior art keywords
- species
- depositing
- synthesis
- deposition
- transport
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 5
- 230000008021 deposition Effects 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 abstract 7
- 230000015572 biosynthetic process Effects 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 4
- 238000003786 synthesis reaction Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 239000013626 chemical specie Substances 0.000 abstract 2
- 238000009833 condensation Methods 0.000 abstract 2
- 230000005494 condensation Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000006482 condensation reaction Methods 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0404—Methods of deposition of the material by coating on electrode collectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/12—Making metallic powder or suspensions thereof using physical processes starting from gaseous material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/4551—Jet streams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0423—Physical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0428—Chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0438—Processes of manufacture in general by electrochemical processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0471—Processes of manufacture in general involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/049—Manufacturing of an active layer by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/383—Hydrogen absorbing alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/14—Cells with non-aqueous electrolyte
- H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
- H01M6/185—Cells with non-aqueous electrolyte with solid electrolyte with oxides, hydroxides or oxysalts as solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/14—Cells with non-aqueous electrolyte
- H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
- H01M6/188—Processes of manufacture
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57967684A | 1984-02-13 | 1984-02-13 | |
PCT/US1985/000219 WO1985003460A1 (en) | 1984-02-13 | 1985-02-12 | Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3585901D1 true DE3585901D1 (de) | 1992-05-27 |
Family
ID=24317878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585901214T Expired - Lifetime DE3585901D1 (de) | 1984-02-13 | 1985-02-12 | Verfahren und vorrichtung fuer gasstrahlniederschlag von leitfaehigen und dielektrischen duennen festfilmen und so hergestellte erzeugnisse. |
Country Status (7)
Country | Link |
---|---|
US (2) | US4788082A (de) |
EP (1) | EP0173715B1 (de) |
JP (1) | JPH0627329B2 (de) |
AT (1) | ATE75167T1 (de) |
AU (1) | AU3994785A (de) |
DE (1) | DE3585901D1 (de) |
WO (1) | WO1985003460A1 (de) |
Families Citing this family (139)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4798165A (en) * | 1985-10-07 | 1989-01-17 | Epsilon | Apparatus for chemical vapor deposition using an axially symmetric gas flow |
DE3884653T2 (de) * | 1987-04-03 | 1994-02-03 | Fujitsu Ltd | Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant. |
US4885067A (en) * | 1987-08-31 | 1989-12-05 | Santa Barbara Research Center | In-situ generation of volatile compounds for chemical vapor deposition |
WO1989001988A1 (en) * | 1987-08-31 | 1989-03-09 | Santa Barbara Research Center | In-situ generation of volatile compounds for chemical vapor deposition |
US5440872A (en) | 1988-11-18 | 1995-08-15 | Pfefferle; William C. | Catalytic method |
US5466651A (en) * | 1988-11-18 | 1995-11-14 | Pfefferle; William C. | Catalytic method |
EP0442681B1 (de) * | 1990-02-13 | 1997-08-06 | Yuasa Corporation | Herstellungsverfahren für eine Elektrode und Herstellungsverfahren für eine Verbund-Elektrode-Elektrolyte |
US5256205A (en) * | 1990-05-09 | 1993-10-26 | Jet Process Corporation | Microwave plasma assisted supersonic gas jet deposition of thin film materials |
US5356672A (en) * | 1990-05-09 | 1994-10-18 | Jet Process Corporation | Method for microwave plasma assisted supersonic gas jet deposition of thin films |
EP0480581A1 (de) * | 1990-09-10 | 1992-04-15 | Applied Science & Technology, Inc. | Kreislaufreaktorsystem mit Konvektion bei hoher Geschwindigkeit |
US5356673A (en) * | 1991-03-18 | 1994-10-18 | Jet Process Corporation | Evaporation system and method for gas jet deposition of thin film materials |
US5246746A (en) * | 1991-04-26 | 1993-09-21 | Michalske Terry A | Method for forming hermetic coatings for optical fibers |
US5286331A (en) * | 1991-11-01 | 1994-02-15 | International Business Machines Corporation | Supersonic molecular beam etching of surfaces |
US5261963A (en) * | 1991-12-04 | 1993-11-16 | Howmet Corporation | CVD apparatus comprising exhaust gas condensation means |
DE4221011A1 (de) * | 1992-06-26 | 1994-01-05 | Basf Ag | Schalenkatalysatoren |
US5290358A (en) * | 1992-09-30 | 1994-03-01 | International Business Machines Corporation | Apparatus for directional low pressure chemical vapor deposition (DLPCVD) |
JPH06146825A (ja) * | 1992-11-04 | 1994-05-27 | Fuji Oozx Inc | チタン製エンジンバルブ |
US5759634A (en) * | 1994-03-11 | 1998-06-02 | Jet Process Corporation | Jet vapor deposition of nanocluster embedded thin films |
US5650197A (en) * | 1994-03-11 | 1997-07-22 | Jet Process Corporation | Jet vapor deposition of organic molecule guest-inorganic host thin films |
US5534314A (en) * | 1994-08-31 | 1996-07-09 | University Of Virginia Patent Foundation | Directed vapor deposition of electron beam evaporant |
US5501875A (en) * | 1994-12-27 | 1996-03-26 | Dow Corning Corporation | Metal coated silica precursor powders |
US5571332A (en) * | 1995-02-10 | 1996-11-05 | Jet Process Corporation | Electron jet vapor deposition system |
DE19510318B4 (de) * | 1995-03-22 | 2004-02-19 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Verfahren und Vorrichtung zur Herstellung epitaktischer Schichten |
US5795626A (en) * | 1995-04-28 | 1998-08-18 | Innovative Technology Inc. | Coating or ablation applicator with a debris recovery attachment |
KR0183729B1 (ko) * | 1995-08-18 | 1999-04-15 | 김광호 | 극 박막의 금속층 형성방법 및 이를 이용한 배선 형성방법 |
US5874134A (en) * | 1996-01-29 | 1999-02-23 | Regents Of The University Of Minnesota | Production of nanostructured materials by hypersonic plasma particle deposition |
US6142163A (en) * | 1996-03-29 | 2000-11-07 | Lam Research Corporation | Method and apparatus for pressure control in vacuum processors |
US6136654A (en) * | 1996-06-07 | 2000-10-24 | Texas Instruments Incorporated | Method of forming thin silicon nitride or silicon oxynitride gate dielectrics |
US6429120B1 (en) | 2000-01-18 | 2002-08-06 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
US5731238A (en) * | 1996-08-05 | 1998-03-24 | Motorola Inc. | Integrated circuit having a jet vapor deposition silicon nitride film and method of making the same |
US6152074A (en) * | 1996-10-30 | 2000-11-28 | Applied Materials, Inc. | Deposition of a thin film on a substrate using a multi-beam source |
US6028012A (en) * | 1996-12-04 | 2000-02-22 | Yale University | Process for forming a gate-quality insulating layer on a silicon carbide substrate |
FR2758318B1 (fr) * | 1997-01-15 | 1999-02-05 | Air Liquide | Procede et installation d'elaboration d'un melange gazeux comportant un gaz porteur, un gaz oxydant et un silane |
US6338809B1 (en) | 1997-02-24 | 2002-01-15 | Superior Micropowders Llc | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
US6165247A (en) * | 1997-02-24 | 2000-12-26 | Superior Micropowders, Llc | Methods for producing platinum powders |
US5972804A (en) * | 1997-08-05 | 1999-10-26 | Motorola, Inc. | Process for forming a semiconductor device |
US5969382A (en) | 1997-11-03 | 1999-10-19 | Delco Electronics Corporation | EPROM in high density CMOS having added substrate diffusion |
US5904553A (en) * | 1997-08-25 | 1999-05-18 | Motorola, Inc. | Fabrication method for a gate quality oxide-compound semiconductor structure |
US6022832A (en) * | 1997-09-23 | 2000-02-08 | American Superconductor Corporation | Low vacuum vapor process for producing superconductor articles with epitaxial layers |
US6027564A (en) * | 1997-09-23 | 2000-02-22 | American Superconductor Corporation | Low vacuum vapor process for producing epitaxial layers |
US6458223B1 (en) | 1997-10-01 | 2002-10-01 | American Superconductor Corporation | Alloy materials |
US6428635B1 (en) | 1997-10-01 | 2002-08-06 | American Superconductor Corporation | Substrates for superconductors |
US6067244A (en) * | 1997-10-14 | 2000-05-23 | Yale University | Ferroelectric dynamic random access memory |
US6165554A (en) * | 1997-11-12 | 2000-12-26 | Jet Process Corporation | Method for hydrogen atom assisted jet vapor deposition for parylene N and other polymeric thin films |
US6337102B1 (en) | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US6041735A (en) * | 1998-03-02 | 2000-03-28 | Ball Semiconductor, Inc. | Inductively coupled plasma powder vaporization for fabricating integrated circuits |
US5975011A (en) * | 1997-12-22 | 1999-11-02 | Ball Semiconductor, Inc. | Apparatus for fabricating spherical shaped semiconductor integrated circuits |
US6211073B1 (en) | 1998-02-27 | 2001-04-03 | Micron Technology, Inc. | Methods for making copper and other metal interconnections in integrated circuits |
US6349668B1 (en) * | 1998-04-27 | 2002-02-26 | Msp Corporation | Method and apparatus for thin film deposition on large area substrates |
US6015459A (en) * | 1998-06-26 | 2000-01-18 | Extreme Devices, Inc. | Method for doping semiconductor materials |
US6284656B1 (en) | 1998-08-04 | 2001-09-04 | Micron Technology, Inc. | Copper metallurgy in integrated circuits |
US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
US6288442B1 (en) | 1998-09-10 | 2001-09-11 | Micron Technology, Inc. | Integrated circuit with oxidation-resistant polymeric layer |
US6359328B1 (en) | 1998-12-31 | 2002-03-19 | Intel Corporation | Methods for making interconnects and diffusion barriers in integrated circuits |
US20020127845A1 (en) * | 1999-03-01 | 2002-09-12 | Paul A. Farrar | Conductive structures in integrated circuits |
US6475311B1 (en) | 1999-03-31 | 2002-11-05 | American Superconductor Corporation | Alloy materials |
SG98436A1 (en) | 1999-12-21 | 2003-09-19 | United Technologies Corp | Method of forming an active-element containing aluminide as stand alone coating and as bond coat and coated article |
US6420262B1 (en) | 2000-01-18 | 2002-07-16 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
US7262130B1 (en) | 2000-01-18 | 2007-08-28 | Micron Technology, Inc. | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals |
US6376370B1 (en) | 2000-01-18 | 2002-04-23 | Micron Technology, Inc. | Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy |
US7211512B1 (en) | 2000-01-18 | 2007-05-01 | Micron Technology, Inc. | Selective electroless-plated copper metallization |
US6426280B2 (en) | 2000-01-26 | 2002-07-30 | Ball Semiconductor, Inc. | Method for doping spherical semiconductors |
US6344416B1 (en) | 2000-03-10 | 2002-02-05 | International Business Machines Corporation | Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions |
US6544339B1 (en) * | 2000-03-22 | 2003-04-08 | Micro C Technologies, Inc. | Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing |
JP2001308082A (ja) * | 2000-04-20 | 2001-11-02 | Nec Corp | 液体有機原料の気化方法及び絶縁膜の成長方法 |
US6674167B1 (en) | 2000-05-31 | 2004-01-06 | Micron Technology, Inc. | Multilevel copper interconnect with double passivation |
US6423629B1 (en) | 2000-05-31 | 2002-07-23 | Kie Y. Ahn | Multilevel copper interconnects with low-k dielectrics and air gaps |
EP1174526A1 (de) * | 2000-07-17 | 2002-01-23 | Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO | Kontinuierliches Abscheiden aus der Gasphase |
AU2001277007A1 (en) | 2000-07-19 | 2002-01-30 | Regents Of The University Of Minnesota | Apparatus and method for synthesizing films and coatings by focused particle beam deposition |
US6607597B2 (en) | 2001-01-30 | 2003-08-19 | Msp Corporation | Method and apparatus for deposition of particles on surfaces |
US6746539B2 (en) | 2001-01-30 | 2004-06-08 | Msp Corporation | Scanning deposition head for depositing particles on a wafer |
US7201940B1 (en) | 2001-06-12 | 2007-04-10 | Advanced Cardiovascular Systems, Inc. | Method and apparatus for thermal spray processing of medical devices |
US6426305B1 (en) | 2001-07-03 | 2002-07-30 | International Business Machines Corporation | Patterned plasma nitridation for selective epi and silicide formation |
CN1287002C (zh) * | 2001-09-04 | 2006-11-29 | 普林斯顿大学理事会 | 喷射沉积有机物蒸汽的方法和装置 |
US6716656B2 (en) | 2001-09-04 | 2004-04-06 | The Trustees Of Princeton University | Self-aligned hybrid deposition |
US8535759B2 (en) | 2001-09-04 | 2013-09-17 | The Trustees Of Princeton University | Method and apparatus for depositing material using a dynamic pressure |
US7431968B1 (en) | 2001-09-04 | 2008-10-07 | The Trustees Of Princeton University | Process and apparatus for organic vapor jet deposition |
US7744957B2 (en) * | 2003-10-23 | 2010-06-29 | The Trustees Of Princeton University | Method and apparatus for depositing material |
US7404862B2 (en) | 2001-09-04 | 2008-07-29 | The Trustees Of Princeton University | Device and method for organic vapor jet deposition |
US6793966B2 (en) | 2001-09-10 | 2004-09-21 | Howmet Research Corporation | Chemical vapor deposition apparatus and method |
US20030166311A1 (en) * | 2001-09-12 | 2003-09-04 | Seiko Epson Corporation | Method for patterning, method for forming film, patterning apparatus, film formation apparatus, electro-optic apparatus and method for manufacturing the same, electronic equipment, and electronic apparatus and method for manufacturing the same |
US20060159838A1 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Controlling ink migration during the formation of printable electronic features |
US7629017B2 (en) * | 2001-10-05 | 2009-12-08 | Cabot Corporation | Methods for the deposition of conductive electronic features |
US7524528B2 (en) * | 2001-10-05 | 2009-04-28 | Cabot Corporation | Precursor compositions and methods for the deposition of passive electrical components on a substrate |
US7115516B2 (en) | 2001-10-09 | 2006-10-03 | Applied Materials, Inc. | Method of depositing a material layer |
US6588934B2 (en) * | 2001-10-29 | 2003-07-08 | United Technologies Corporation | Silver-containing copper alloys for journal bearings |
US6951765B1 (en) * | 2001-12-12 | 2005-10-04 | Novellus Systems, Inc. | Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor |
SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
US6995445B2 (en) * | 2003-03-14 | 2006-02-07 | The Trustees Of Princeton University | Thin film organic position sensitive detectors |
US7220665B2 (en) | 2003-08-05 | 2007-05-22 | Micron Technology, Inc. | H2 plasma treatment |
US7281853B2 (en) * | 2003-12-01 | 2007-10-16 | United Technologies Corporation | Bearing material |
US7939129B2 (en) * | 2004-01-26 | 2011-05-10 | Pilington North America, Inc. | Deposition of iron oxide coatings on a glass substrate |
US20050233203A1 (en) * | 2004-03-15 | 2005-10-20 | Hampden-Smith Mark J | Modified carbon products, their use in fluid/gas diffusion layers and similar devices and methods relating to the same |
US7334881B2 (en) * | 2004-07-12 | 2008-02-26 | Hewlett-Packard Development Company, L.P. | Method and system to deposit drops |
SE0402865L (sv) * | 2004-11-04 | 2006-05-05 | Sandvik Intellectual Property | Belagd produkt och framställningsmetod för denna |
WO2006076608A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | A system and process for manufacturing custom electronics by combining traditional electronics with printable electronics |
WO2006076603A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Printable electrical conductors |
US8383014B2 (en) | 2010-06-15 | 2013-02-26 | Cabot Corporation | Metal nanoparticle compositions |
US7824466B2 (en) | 2005-01-14 | 2010-11-02 | Cabot Corporation | Production of metal nanoparticles |
CN101870218A (zh) * | 2005-01-14 | 2010-10-27 | 卡伯特公司 | 防伪特征件、其使用及其制造方法 |
US20060189113A1 (en) * | 2005-01-14 | 2006-08-24 | Cabot Corporation | Metal nanoparticle compositions |
US8167393B2 (en) * | 2005-01-14 | 2012-05-01 | Cabot Corporation | Printable electronic features on non-uniform substrate and processes for making same |
WO2006076614A1 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | A process for manufacturing application specific printable circuits (aspc's) and other custom electronic devices |
US8334464B2 (en) * | 2005-01-14 | 2012-12-18 | Cabot Corporation | Optimized multi-layer printing of electronics and displays |
WO2006076615A1 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Ink-jet printing of compositionally no-uniform features |
WO2006114686A1 (en) * | 2005-04-25 | 2006-11-02 | CARL ZEISS VISION SOUTH AFRICA (Pty) LTD | A method and apparatus for coating objects |
US7495743B2 (en) * | 2005-09-30 | 2009-02-24 | International Business Machines Corporation | Immersion optical lithography system having protective optical coating |
JP4677873B2 (ja) * | 2005-10-05 | 2011-04-27 | 株式会社デンソー | 成膜装置 |
WO2007053408A2 (en) * | 2005-10-28 | 2007-05-10 | Cabot Corporation | Luminescent compositions, methods for making luminescent compositions and inks incorporating the same |
JP4952227B2 (ja) * | 2006-01-06 | 2012-06-13 | 富士通株式会社 | 微粒子サイズ選別装置 |
US20070298961A1 (en) * | 2006-06-22 | 2007-12-27 | Rice Gordon L | Method of producing electrodes |
US8603250B2 (en) * | 2006-06-27 | 2013-12-10 | First Solar, Inc. | System and method for deposition of a material on a substrate |
US7382944B1 (en) | 2006-07-14 | 2008-06-03 | The United States Of America As Represented By The Administration Of The National Aeronautics And Space Administration | Protective coating and hyperthermal atomic oxygen texturing of optical fibers used for blood glucose monitoring |
US7922936B2 (en) * | 2006-10-26 | 2011-04-12 | Cabot Corporation | Luminescent compositions, methods for making luminescent compositions and inks incorporating the same |
KR101149408B1 (ko) * | 2006-11-15 | 2012-06-01 | 삼성전자주식회사 | 연료 전지용 전극의 제조 방법 및 제조 장치 |
JP2008204835A (ja) * | 2007-02-21 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 電気化学素子とその電極の前処理方法および製造方法、前処理装置 |
US20080292903A1 (en) * | 2007-05-25 | 2008-11-27 | United Technologies Corporation | Coated gas turbine engine component repair |
US20110057358A1 (en) * | 2007-08-28 | 2011-03-10 | Behnam Mostajeran Goortani | Method of production of solid and porous films from particulate materials by high heat flux source |
US8931431B2 (en) | 2009-03-25 | 2015-01-13 | The Regents Of The University Of Michigan | Nozzle geometry for organic vapor jet printing |
WO2011008778A2 (en) * | 2009-07-14 | 2011-01-20 | University Of Massachusetts | Metal and metal oxide structures and preparation thereof |
US8801856B2 (en) | 2009-09-08 | 2014-08-12 | Universal Display Corporation | Method and system for high-throughput deposition of patterned organic thin films |
US8989335B2 (en) | 2009-11-12 | 2015-03-24 | Global Medical Isotope Systems Llc | Techniques for on-demand production of medical radioactive iodine isotopes including I-131 |
US8957265B2 (en) | 2009-12-09 | 2015-02-17 | Green Technology Llc | Separation and extraction of hydrocarbons from source material |
US8273244B2 (en) * | 2009-12-09 | 2012-09-25 | Green Technology Llc | Separation and extraction of bitumen from tar sands |
DE102010034653A1 (de) * | 2010-08-17 | 2012-02-23 | Centrotherm Photovoltaics Ag | Verfahren zur Kondensation von Chalkogendampf sowie Vorrichtung zur Durchführung des Verfahrens |
US9607955B2 (en) * | 2010-11-10 | 2017-03-28 | Cree, Inc. | Contact pad |
DE102010043949B4 (de) * | 2010-11-16 | 2013-06-20 | Innovent E.V. | Vorrichtung und Verfahren zum Beschichten von Oberflächen |
US20130000552A1 (en) * | 2011-06-28 | 2013-01-03 | Nitride Solutions Inc. | Device and method for producing bulk single crystals |
EP2803078A1 (de) | 2012-01-12 | 2014-11-19 | First Solar, Inc | Verfahren und system zur dotierungsdichtesteuerung in verschiedenen schichten eines halbleiterbauelements |
JP6078335B2 (ja) * | 2012-12-27 | 2017-02-08 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム |
US8978669B2 (en) | 2014-04-14 | 2015-03-17 | Wanda S. Klopf | Dental floss dispenser with clip |
US9606430B2 (en) * | 2014-08-28 | 2017-03-28 | Xerox Corporation | Method of aerosol printing a solder mask ink composition |
JP6321200B2 (ja) * | 2014-10-29 | 2018-05-09 | 東芝三菱電機産業システム株式会社 | ガス噴射装置 |
KR101974289B1 (ko) * | 2014-10-29 | 2019-04-30 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 성막 장치에의 가스 분사 장치 |
GB201713930D0 (en) * | 2017-08-31 | 2017-10-18 | Univ Leuven Kath | Rotor gas accelerator system and methods |
WO2019136261A1 (en) * | 2018-01-04 | 2019-07-11 | Ih Ip Holdings Limited | Gas phase co-deposition of hydrogen/deuterium loaded metallic structures |
DE102018120580A1 (de) * | 2018-08-23 | 2020-02-27 | Infineon Technologies Ag | Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck |
JP7080140B2 (ja) * | 2018-09-06 | 2022-06-03 | 東京エレクトロン株式会社 | 基板処理装置 |
EP3786311A1 (de) * | 2019-08-30 | 2021-03-03 | Theva Dünnschichttechnik GmbH | Vorrichtung, verfahren und system zur beschichtung eines substrats, insbesondere eines supraleitenden bandleiter sowie beschichteter supraleitender bandleiter |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2155932A (en) * | 1938-04-26 | 1939-04-25 | Howard C Davis | Process of deposition |
US3511703A (en) * | 1963-09-20 | 1970-05-12 | Motorola Inc | Method for depositing mixed oxide films containing aluminum oxide |
US3382845A (en) * | 1964-07-21 | 1968-05-14 | Avisun Corp | Separating liquid droplets in spray coating operation |
US4089735A (en) * | 1968-06-05 | 1978-05-16 | Siemens Aktiengesellschaft | Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors |
NL7005770A (de) * | 1969-07-02 | 1971-01-05 | ||
US3654895A (en) * | 1969-08-15 | 1972-04-11 | Texas Instruments Inc | Apparatus for forming a refractory coating on the inner periphery of a tubular object |
FR2110622A5 (de) * | 1970-10-23 | 1972-06-02 | Commissariat Energie Atomique | |
US3808035A (en) * | 1970-12-09 | 1974-04-30 | M Stelter | Deposition of single or multiple layers on substrates from dilute gas sweep to produce optical components, electro-optical components, and the like |
US3850679A (en) * | 1972-12-15 | 1974-11-26 | Ppg Industries Inc | Chemical vapor deposition of coatings |
US3942469A (en) * | 1972-12-15 | 1976-03-09 | Ppg Industries, Inc. | Vapor deposition nozzle |
GB1507465A (en) * | 1974-06-14 | 1978-04-12 | Pilkington Brothers Ltd | Coating glass |
JPS5853548B2 (ja) * | 1975-08-11 | 1983-11-30 | カブシキガイシヤ コウナンカメラケンキユウシヨ | パノラマカンサツソウチ |
US4048955A (en) * | 1975-09-02 | 1977-09-20 | Texas Instruments Incorporated | Continuous chemical vapor deposition reactor |
US4033286A (en) * | 1976-07-12 | 1977-07-05 | California Institute Of Technology | Chemical vapor deposition reactor |
JPS5320951A (en) * | 1976-08-11 | 1978-02-25 | Seiko Instr & Electronics Ltd | Display device |
DE2638270C2 (de) * | 1976-08-25 | 1983-01-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium |
CH628600A5 (fr) * | 1979-02-14 | 1982-03-15 | Siv Soc Italiana Vetro | Procede pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide et installation pour la mise en oeuvre de ce procede. |
DE3016807A1 (de) * | 1980-05-02 | 1981-11-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von silizium |
CH640571A5 (fr) * | 1981-03-06 | 1984-01-13 | Battelle Memorial Institute | Procede et dispositif pour deposer sur un substrat une couche de matiere minerale. |
US4466876A (en) * | 1981-03-17 | 1984-08-21 | Clarion Co., Ltd. | Thin layer depositing apparatus |
FR2514033B1 (fr) * | 1981-10-02 | 1985-09-27 | Henaff Louis | Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma |
CH643469A5 (fr) * | 1981-12-22 | 1984-06-15 | Siv Soc Italiana Vetro | Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide. |
JPS58116725A (ja) * | 1981-12-29 | 1983-07-12 | Pioneer Electronic Corp | Cvd装置 |
US4430149A (en) * | 1981-12-30 | 1984-02-07 | Rca Corporation | Chemical vapor deposition of epitaxial silicon |
JPS5980361A (ja) * | 1982-10-29 | 1984-05-09 | Chikara Hayashi | 超微粒子の膜形成法 |
US4468283A (en) * | 1982-12-17 | 1984-08-28 | Irfan Ahmed | Method for etching and controlled chemical vapor deposition |
JPS60106964A (ja) * | 1983-11-12 | 1985-06-12 | Res Dev Corp Of Japan | 超微粒子膜の形成法並に装置 |
DE3884653T2 (de) * | 1987-04-03 | 1994-02-03 | Fujitsu Ltd | Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant. |
-
1985
- 1985-02-12 JP JP60500942A patent/JPH0627329B2/ja not_active Expired - Lifetime
- 1985-02-12 AU AU39947/85A patent/AU3994785A/en not_active Abandoned
- 1985-02-12 EP EP85901214A patent/EP0173715B1/de not_active Expired
- 1985-02-12 AT AT85901214T patent/ATE75167T1/de not_active IP Right Cessation
- 1985-02-12 WO PCT/US1985/000219 patent/WO1985003460A1/en active IP Right Grant
- 1985-02-12 DE DE8585901214T patent/DE3585901D1/de not_active Expired - Lifetime
- 1985-12-12 US US06/888,590 patent/US4788082A/en not_active Expired - Lifetime
-
1995
- 1995-01-24 US US08/377,672 patent/US5725672A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1985003460A1 (en) | 1985-08-15 |
EP0173715A1 (de) | 1986-03-12 |
JPH0627329B2 (ja) | 1994-04-13 |
JPS61501214A (ja) | 1986-06-19 |
US4788082A (en) | 1988-11-29 |
ATE75167T1 (de) | 1992-05-15 |
EP0173715B1 (de) | 1992-04-22 |
AU3994785A (en) | 1985-08-27 |
EP0173715A4 (de) | 1988-06-27 |
US5725672A (en) | 1998-03-10 |
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