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DE3482076D1 - Plasmabearbeitungsverfahren und geraet zur anwendung dieses verfahrens. - Google Patents

Plasmabearbeitungsverfahren und geraet zur anwendung dieses verfahrens.

Info

Publication number
DE3482076D1
DE3482076D1 DE8484112571T DE3482076T DE3482076D1 DE 3482076 D1 DE3482076 D1 DE 3482076D1 DE 8484112571 T DE8484112571 T DE 8484112571T DE 3482076 T DE3482076 T DE 3482076T DE 3482076 D1 DE3482076 D1 DE 3482076D1
Authority
DE
Germany
Prior art keywords
plasma processing
processing method
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484112571T
Other languages
English (en)
Inventor
Toru Otsubo
Susumu Aiuchi
Takashi Kamimura
Minoru Noguchi
Teru Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19431183A external-priority patent/JPS6086831A/ja
Priority claimed from JP13311784A external-priority patent/JPS6113625A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3482076D1 publication Critical patent/DE3482076D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
DE8484112571T 1983-10-19 1984-10-18 Plasmabearbeitungsverfahren und geraet zur anwendung dieses verfahrens. Expired - Lifetime DE3482076D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19431183A JPS6086831A (ja) 1983-10-19 1983-10-19 プラズマ処理方法およびその装置
JP13311784A JPS6113625A (ja) 1984-06-29 1984-06-29 プラズマ処理装置

Publications (1)

Publication Number Publication Date
DE3482076D1 true DE3482076D1 (de) 1990-05-31

Family

ID=26467539

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484112571T Expired - Lifetime DE3482076D1 (de) 1983-10-19 1984-10-18 Plasmabearbeitungsverfahren und geraet zur anwendung dieses verfahrens.

Country Status (4)

Country Link
US (1) US4808258A (de)
EP (1) EP0140294B1 (de)
KR (1) KR890004881B1 (de)
DE (1) DE3482076D1 (de)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3439254A1 (de) * 1984-10-26 1986-04-30 MAP Mikrofilm Apparatebau Dr. Poehler GmbH & Co KG, 6352 Ober-Mörlen Objektivhalterung
US4581100A (en) * 1984-10-29 1986-04-08 International Business Machines Corporation Mixed excitation plasma etching system
US4926791A (en) * 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
NL8701867A (nl) * 1987-08-07 1989-03-01 Cobrain Nv Werkwijze voor het behandelen, in het bijzonder droog etsen van een substraat en etsinrichting.
GB2212974B (en) * 1987-11-25 1992-02-12 Fuji Electric Co Ltd Plasma processing apparatus
JPH0216731A (ja) * 1988-07-05 1990-01-19 Mitsubishi Electric Corp プラズマ反応装置
US4950377A (en) * 1988-09-23 1990-08-21 Siemens Aktiengesellschaft Apparatus and method for reactive ion etching
IT1227877B (it) * 1988-11-25 1991-05-14 Eniricerche S P A Agip S P A Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
DE69017271T2 (de) * 1989-06-15 1995-06-22 Semiconductor Energy Lab Gerät zur Bearbeitung mittels Mikrowellen in einem magnetischen Feld.
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US5223457A (en) * 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
DE59209786D1 (de) * 1991-09-20 2000-02-03 Balzers Hochvakuum Verfahren zur Schutzbeschichtung von Substraten sowie Beschichtungsanlage
US5849136A (en) * 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
US5478429A (en) * 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus
JP3252507B2 (ja) * 1993-01-29 2002-02-04 ソニー株式会社 プラズマ処理装置
DE4307768A1 (de) * 1993-03-11 1994-09-15 Fraunhofer Ges Forschung Verfahren zur Anregung von Gasentladungen
US6328845B1 (en) * 1993-03-18 2001-12-11 Hitachi, Ltd. Plasma-processing method and an apparatus for carrying out the same
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
US5441596A (en) * 1994-07-27 1995-08-15 Cypress Semiconductor Corporation Method for forming a stable plasma
US5618758A (en) * 1995-02-17 1997-04-08 Sharp Kabushiki Kaisha Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method
US5614060A (en) * 1995-03-23 1997-03-25 Applied Materials, Inc. Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
DE19610012B4 (de) * 1996-03-14 2005-02-10 Unaxis Deutschland Holding Gmbh Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
JPH10150025A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp プラズマ反応装置
JP3042450B2 (ja) * 1997-06-24 2000-05-15 日本電気株式会社 プラズマ処理方法
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
US6083355A (en) * 1997-07-14 2000-07-04 The University Of Tennessee Research Corporation Electrodes for plasma treater systems
US6093332A (en) * 1998-02-04 2000-07-25 Lam Research Corporation Methods for reducing mask erosion during plasma etching
KR100521120B1 (ko) 1998-02-13 2005-10-12 가부시끼가이샤 히다치 세이사꾸쇼 반도체소자의 표면처리방법 및 장치
US6660647B1 (en) 1998-03-12 2003-12-09 Hitachi, Ltd. Method for processing surface of sample
JP4351755B2 (ja) * 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
DE10145297A1 (de) * 2001-09-14 2003-04-10 Bosch Gmbh Robert Verfahren zum Einätzen von Strukturen in einen Ätzkörper mit einem Plasma
US7361287B2 (en) 1999-04-30 2008-04-22 Robert Bosch Gmbh Method for etching structures in an etching body by means of a plasma
JP4672941B2 (ja) 1999-07-13 2011-04-20 東京エレクトロン株式会社 誘導結合プラズマを発生させるための高周波電源
CN100371491C (zh) * 1999-08-17 2008-02-27 东京电子株式会社 脉冲等离子体处理方法及其设备
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
US6472822B1 (en) * 2000-04-28 2002-10-29 Applied Materials, Inc. Pulsed RF power delivery for plasma processing
US6544895B1 (en) * 2000-08-17 2003-04-08 Micron Technology, Inc. Methods for use of pulsed voltage in a plasma reactor
US6485572B1 (en) * 2000-08-28 2002-11-26 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
US7112533B2 (en) * 2000-08-31 2006-09-26 Micron Technology, Inc. Plasma etching system and method
US6562190B1 (en) * 2000-10-06 2003-05-13 Lam Research Corporation System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
US6726804B2 (en) * 2001-01-22 2004-04-27 Liang-Guo Wang RF power delivery for plasma processing using modulated power signal
US6777037B2 (en) * 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
DE10309711A1 (de) 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
JP2003173757A (ja) * 2001-12-04 2003-06-20 Nissin Electric Co Ltd イオンビーム照射装置
US7025895B2 (en) * 2002-08-15 2006-04-11 Hitachi High-Technologies Corporation Plasma processing apparatus and method
US20040132311A1 (en) * 2003-01-06 2004-07-08 Applied Materials, Inc. Method of etching high-K dielectric materials
US6942813B2 (en) * 2003-03-05 2005-09-13 Applied Materials, Inc. Method of etching magnetic and ferroelectric materials using a pulsed bias source
US7976673B2 (en) 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
KR100971370B1 (ko) * 2003-08-12 2010-07-20 주성엔지니어링(주) 균일한 대면적 플라즈마 발생을 위한 고주파전원 공급장치
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
KR101170597B1 (ko) * 2006-05-10 2012-08-02 주성엔지니어링(주) 진폭변조 알에프 전력을 이용한 갭필 방법 및 이를 위한갭필 장치
US8207010B2 (en) * 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
JP5337159B2 (ja) * 2007-10-26 2013-11-06 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系及びこれを有する投影露光装置
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
JP5211332B2 (ja) * 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
EP2416629B1 (de) * 2009-08-07 2021-04-21 Kyosan Electric Mfg. Co. Ltd Pulsmoduliertes hochfrequenz-leistungssteuerungsverfahren und pulsmodulierte hochfrequenzstromquellenvorrichtung
JP5845754B2 (ja) * 2010-09-15 2016-01-20 東京エレクトロン株式会社 プラズマエッチング処理方法
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
JP6316735B2 (ja) * 2014-12-04 2018-04-25 東京エレクトロン株式会社 プラズマエッチング方法
KR102346036B1 (ko) * 2014-12-25 2021-12-30 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
TW202147445A (zh) * 2020-05-14 2021-12-16 日商東京威力科創股份有限公司 電漿處理裝置
TW202147444A (zh) * 2020-05-14 2021-12-16 日商東京威力科創股份有限公司 電漿處理方法及電漿處理裝置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
US4233109A (en) * 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
FR2463975A1 (fr) * 1979-08-22 1981-02-27 Onera (Off Nat Aerospatiale) Procede et appareil pour la gravure chimique par voie seche des circuits integres
JPS5633839A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Plasma treatment and device therefor
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
JPS5825742B2 (ja) * 1979-12-22 1983-05-30 富士通株式会社 プラズマエッチング処理方法及び処理装置
US4349409A (en) * 1980-05-12 1982-09-14 Fujitsu Limited Method and apparatus for plasma etching
JPS58100430A (ja) * 1981-12-11 1983-06-15 Hitachi Ltd プラズマ処理装置
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4496448A (en) * 1983-10-13 1985-01-29 At&T Bell Laboratories Method for fabricating devices with DC bias-controlled reactive ion etching
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor

Also Published As

Publication number Publication date
EP0140294A2 (de) 1985-05-08
KR890004881B1 (ko) 1989-11-30
KR850003059A (ko) 1985-05-28
EP0140294A3 (en) 1986-08-20
US4808258A (en) 1989-02-28
EP0140294B1 (de) 1990-04-25

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