DE3463882D1 - Mos-transistor amplifier - Google Patents
Mos-transistor amplifierInfo
- Publication number
- DE3463882D1 DE3463882D1 DE8484101514T DE3463882T DE3463882D1 DE 3463882 D1 DE3463882 D1 DE 3463882D1 DE 8484101514 T DE8484101514 T DE 8484101514T DE 3463882 T DE3463882 T DE 3463882T DE 3463882 D1 DE3463882 D1 DE 3463882D1
- Authority
- DE
- Germany
- Prior art keywords
- mos transistor
- transistor amplifier
- amplifier
- mos
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58024558A JPS59151510A (ja) | 1983-02-18 | 1983-02-18 | C−mos負荷型増幅器 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3463882D1 true DE3463882D1 (de) | 1987-06-25 |
Family
ID=12141482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484101514T Expired DE3463882D1 (de) | 1983-02-18 | 1984-02-14 | Mos-transistor amplifier |
Country Status (5)
Country | Link |
---|---|
US (1) | US4563654A (de) |
EP (1) | EP0121688B1 (de) |
JP (1) | JPS59151510A (de) |
KR (1) | KR900000992B1 (de) |
DE (1) | DE3463882D1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4641194A (en) * | 1984-08-27 | 1987-02-03 | Rca Corporation | Kinescope driver in a digital video signal processing system |
DE3663764D1 (en) * | 1986-03-21 | 1989-07-06 | Itt Ind Gmbh Deutsche | Differential amplifier with nmos transistors |
JP2559032B2 (ja) * | 1986-09-13 | 1996-11-27 | 富士通株式会社 | 差動増幅回路 |
US4841254A (en) * | 1987-05-29 | 1989-06-20 | International Business Machines Corp. | CMOS precision gain amplifier |
DE69507023T2 (de) * | 1994-04-29 | 1999-06-10 | Analog Devices Inc., Norwood, Mass. | Ladungswiederverteilung-ad-wandler mit systemeichung |
US5600322A (en) * | 1994-04-29 | 1997-02-04 | Analog Devices, Inc. | Low-voltage CMOS analog-to-digital converter |
US5600275A (en) * | 1994-04-29 | 1997-02-04 | Analog Devices, Inc. | Low-voltage CMOS comparator with offset cancellation |
US5668551A (en) * | 1995-01-18 | 1997-09-16 | Analog Devices, Inc. | Power-up calibration of charge redistribution analog-to-digital converter |
US5621409A (en) * | 1995-02-15 | 1997-04-15 | Analog Devices, Inc. | Analog-to-digital conversion with multiple charge balance conversions |
US5798660A (en) * | 1996-06-13 | 1998-08-25 | Tritech Microelectronics International Pte Ltd. | Cascoded differential pair amplifier with current injection for gain enhancement |
JPH11251848A (ja) * | 1998-03-05 | 1999-09-17 | Nec Corp | チューナブルmos線形トランスコンダクタンス・アンプ |
US6909310B2 (en) * | 2003-01-30 | 2005-06-21 | Agilent Technologies, Inc. | CMOS controlled-impedance transmission line driver |
JP2005223627A (ja) * | 2004-02-05 | 2005-08-18 | Asahi Kasei Microsystems Kk | 演算増幅回路 |
JP2017112537A (ja) * | 2015-12-17 | 2017-06-22 | シナプティクス・ジャパン合同会社 | インバータ回路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913026A (en) * | 1974-04-08 | 1975-10-14 | Bulova Watch Co Inc | Mos transistor gain block |
JPS5341057A (en) * | 1976-09-26 | 1978-04-14 | Masao Takagi | Drainage treating method |
GB1592800A (en) * | 1977-12-30 | 1981-07-08 | Philips Electronic Associated | Linear amplifier |
GB2058248B (en) * | 1979-09-12 | 1982-09-22 | Butterworth System Inc | Sealing arrangement |
-
1983
- 1983-02-18 JP JP58024558A patent/JPS59151510A/ja active Pending
-
1984
- 1984-02-14 EP EP84101514A patent/EP0121688B1/de not_active Expired
- 1984-02-14 DE DE8484101514T patent/DE3463882D1/de not_active Expired
- 1984-02-16 KR KR1019840000735A patent/KR900000992B1/ko not_active Expired
- 1984-02-17 US US06/581,271 patent/US4563654A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS59151510A (ja) | 1984-08-30 |
KR900000992B1 (ko) | 1990-02-23 |
EP0121688A1 (de) | 1984-10-17 |
US4563654A (en) | 1986-01-07 |
EP0121688B1 (de) | 1987-05-20 |
KR840008091A (ko) | 1984-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3881304D1 (de) | Mos-transistor. | |
DE3381367D1 (de) | Mos-transistor. | |
KR860700189A (ko) | 전계효과 트랜지스터용 무변압기 구동회로 | |
GB2077493B (en) | Mos transistor | |
IT1176216B (it) | Procedimento per fabbricare transistor ad effetto di campo | |
DE3477448D1 (de) | Complementary mos circuit | |
DE3485038D1 (de) | Mos-speicher. | |
DE3873839D1 (de) | Mos-leistungstransistoranordnung. | |
DE3788525D1 (de) | Feldeffekttransistoranordnungen. | |
DE3866016D1 (de) | Mos-transistor-brueckenschaltung. | |
GB8333696D0 (en) | Transistor amplifier | |
DE3689433D1 (de) | Feldeffekttransistor. | |
DK139285D0 (da) | Mos dosimeter | |
KR850002677A (ko) | 게이트 에레이 | |
KR840003539A (ko) | 전계효과 트랜지스터의 제조방법 | |
DE3751098D1 (de) | Feldeffekttransistor. | |
DE3576612D1 (de) | Halbleiteranordnung mit mos-transistoren. | |
DE3463882D1 (de) | Mos-transistor amplifier | |
GB2077494B (en) | Mos transistor | |
DE3676259D1 (de) | Geschuetzte mos-transistorschaltung. | |
FI811919L (fi) | Skyddskrets foer transistor | |
DE3583064D1 (de) | Supraleitender transistor. | |
DE3686180D1 (de) | Vertikaler mos-transistor mit peripherer schaltung. | |
DE3673509D1 (de) | Feldeffekttransistorverstaerkerschaltungen. | |
DE3370245D1 (de) | A mos transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8339 | Ceased/non-payment of the annual fee |