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KR850002677A - 게이트 에레이 - Google Patents

게이트 에레이

Info

Publication number
KR850002677A
KR850002677A KR1019840005670A KR840005670A KR850002677A KR 850002677 A KR850002677 A KR 850002677A KR 1019840005670 A KR1019840005670 A KR 1019840005670A KR 840005670 A KR840005670 A KR 840005670A KR 850002677 A KR850002677 A KR 850002677A
Authority
KR
South Korea
Prior art keywords
erey
gate
gate erey
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019840005670A
Other languages
English (en)
Other versions
KR890003147B1 (ko
Inventor
히데오 몬다
마사또 이시구로
데쯔오 가와노
Original Assignee
후지쓰가부끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰가부끼가이샤 filed Critical 후지쓰가부끼가이샤
Publication of KR850002677A publication Critical patent/KR850002677A/ko
Application granted granted Critical
Publication of KR890003147B1 publication Critical patent/KR890003147B1/ko
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/903Masterslice integrated circuits comprising field effect technology
    • H10D84/907CMOS gate arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
KR1019840005670A 1983-09-30 1984-09-17 게이트 에레이 Expired KR890003147B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58181996A JPS6074644A (ja) 1983-09-30 1983-09-30 Cmosゲ−トアレ−
JP58-181996 1983-09-30

Publications (2)

Publication Number Publication Date
KR850002677A true KR850002677A (ko) 1985-05-15
KR890003147B1 KR890003147B1 (ko) 1989-08-23

Family

ID=16110497

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840005670A Expired KR890003147B1 (ko) 1983-09-30 1984-09-17 게이트 에레이

Country Status (5)

Country Link
US (1) US4692783A (ko)
EP (1) EP0136952B1 (ko)
JP (1) JPS6074644A (ko)
KR (1) KR890003147B1 (ko)
DE (1) DE3478074D1 (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO861166L (no) * 1985-04-24 1986-10-27 Siemens Ag Celle oppbygget i cmos-teknikk.
JPH0758762B2 (ja) * 1985-07-26 1995-06-21 日本電気株式会社 相補mos形半導体集積回路装置
KR870009285A (ko) * 1986-03-25 1987-10-24 드로스트, 후흐스 세 입력신호를 논리-연결하기 위한 모듈로-2 가산기
JPH0650761B2 (ja) * 1986-08-12 1994-06-29 富士通株式会社 半導体装置
DE3850790T2 (de) * 1987-02-09 1994-12-22 Fujitsu Ltd Gatematrix mit in Verbindungsgebiet begrabenem Transistor.
JPH079978B2 (ja) * 1987-02-24 1995-02-01 富士通株式会社 マスタスライス型半導体集積回路
JPS63306641A (ja) * 1987-06-08 1988-12-14 Nec Corp 半導体集積回路
JPH01289138A (ja) * 1988-05-16 1989-11-21 Toshiba Corp マスタースライス型半導体集積回路
JPH0289365A (ja) * 1988-09-27 1990-03-29 Nec Corp Cmos集積回路
JPH02177457A (ja) * 1988-12-28 1990-07-10 Hitachi Ltd 半導体装置
EP0712164B1 (en) * 1989-04-19 2003-07-02 Seiko Epson Corporation Semiconductor device
DE68925897T2 (de) * 1989-04-28 1996-10-02 Ibm Gate-Array-Zelle, bestehend aus FET's von verschiedener und optimierter Grösse
US5214299A (en) * 1989-09-22 1993-05-25 Unisys Corporation Fast change standard cell digital logic chip
US5182577A (en) * 1990-01-25 1993-01-26 Canon Kabushiki Kaisha Ink jet recording head having an improved substance arrangement device
JPH0475377A (ja) * 1990-07-18 1992-03-10 Nec Ic Microcomput Syst Ltd 半導体集積回路
JPH05243532A (ja) * 1991-11-01 1993-09-21 Texas Instr Inc <Ti> 複数のpチャンネルトランジスタを有するゲートアレイ基本セル
JPH0997885A (ja) * 1995-09-28 1997-04-08 Denso Corp ゲートアレイ
JP3152635B2 (ja) * 1996-09-09 2001-04-03 三洋電機株式会社 マスタスライス方式の基本セル、半導体集積回路装置、フリップフロップ回路、排他的論理和回路、マルチプレクサ及び加算器
US5932900A (en) * 1997-06-20 1999-08-03 Faraday Technology Corporation Flexible cell for gate array
US6285088B1 (en) * 1998-05-13 2001-09-04 Texas Instruments Incorporated Compact memory circuit
US6974978B1 (en) * 1999-03-04 2005-12-13 Intel Corporation Gate array architecture
US6399989B1 (en) 1999-08-03 2002-06-04 Bae Systems Information And Electronic Systems Integration Inc. Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
US6716728B2 (en) 1999-08-03 2004-04-06 Bae Systems Information And Electronic Systems Integration, Inc. Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
DE102004052581B4 (de) * 2004-10-29 2008-11-20 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer CMOS-Gatestruktur mit einem vordotierten Halbleitergatematerial

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US4272830A (en) * 1978-12-22 1981-06-09 Motorola, Inc. ROM Storage location having more than two states
US4278897A (en) * 1978-12-28 1981-07-14 Fujitsu Limited Large scale semiconductor integrated circuit device
JPS57133712A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Constituting method of delay circuit in master slice ic
JPS5851536A (ja) * 1981-09-24 1983-03-26 Ricoh Co Ltd マスタスライスチツプ
JPS58122771A (ja) * 1982-01-14 1983-07-21 Nec Corp 半導体集積回路装置
JPS58139446A (ja) * 1982-02-15 1983-08-18 Nec Corp 半導体集積回路装置
US4575745A (en) * 1983-06-21 1986-03-11 Rca Corporation Tailorable standard cells and method for tailoring the performance of IC designs

Also Published As

Publication number Publication date
DE3478074D1 (en) 1989-06-08
KR890003147B1 (ko) 1989-08-23
JPS6074644A (ja) 1985-04-26
US4692783A (en) 1987-09-08
EP0136952B1 (en) 1989-05-03
EP0136952A3 (en) 1986-02-26
EP0136952A2 (en) 1985-04-10

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