DE3381607D1 - Photoelektrischer umwandler mit halbleiter. - Google Patents

Photoelektrischer umwandler mit halbleiter.

Info

Publication number: DE3381607D1
Authority: DE; Germany
Prior art keywords: semiconductor; photoelectric converter; photoelectric; converter
Prior art date: 1982-09-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8383902825T

Other languages

English (en)

Inventor

Junichi Nishizawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Individual

Original Assignee

Individual

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-09-03

Filing date

1983-09-02

Publication date

1990-06-28

1983-09-02 Application filed by Individual filed Critical Individual

1990-06-28 Application granted granted Critical

1990-06-28 Publication of DE3381607D1 publication Critical patent/DE3381607D1/de

2003-09-03 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
- H10F30/2863—Field-effect phototransistors having PN homojunction gates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/343—Gate regions of field-effect devices having PN junction gates

DE8383902825T 1982-09-03 1983-09-02 Photoelektrischer umwandler mit halbleiter. Expired - Lifetime DE3381607D1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP57153429A JPS5943581A (ja)	1982-09-03	1982-09-03	半導体光電変換装置
PCT/JP1983/000295 WO1984001056A1 (fr)	1982-09-03	1983-09-02	Convertisseur photo-electrique a semiconducteur

Publications (1)

Publication Number	Publication Date
DE3381607D1 true DE3381607D1 (de)	1990-06-28

Family

ID=15562317

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8383902825T Expired - Lifetime DE3381607D1 (de)	1982-09-03	1983-09-02	Photoelektrischer umwandler mit halbleiter.

Country Status (5)

Country	Link
US (1)	US4613881A (de)
EP (1)	EP0117874B1 (de)
JP (1)	JPS5943581A (de)
DE (1)	DE3381607D1 (de)
WO (1)	WO1984001056A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59107578A (ja) *	1982-12-11	1984-06-21	Junichi Nishizawa	半導体光電変換装置
JPS59107688A (ja) *	1982-12-13	1984-06-21	Fuji Photo Film Co Ltd	半導体撮像装置
JPS59188277A (ja) *	1983-04-08	1984-10-25	Hamamatsu Photonics Kk	半導体撮像装置
JPS60143668A (ja) *	1983-12-29	1985-07-29	Res Dev Corp Of Japan	カラ−用イメ−ジセンサ
JPH0828526B2 (ja) *	1985-10-14	1996-03-21	新技術事業団	半導体光電変換装置の製造方法
JPH0641665B2 (ja) *	1986-06-09	1994-06-01	東レ株式会社	布帛の擦過処理方法および擦過処理装置
US5331164A (en) *	1991-03-19	1994-07-19	California Institute Of Technology	Particle sensor array
US6992322B2 (en) *	2001-01-02	2006-01-31	Kavassery Sureswaran Narayan	Photo-responsive organic field effect transistor
WO2004070849A1 (de) *	2003-02-06	2004-08-19	Siemens Aktiengesellschaft	Sperrschicht-feldeffekttransistor
CN2788876Y (zh) *	2005-05-10	2006-06-21	张逸夫	模拟花开动作的仿真玩具花
GB2445313B (en)	2006-02-14	2011-03-23	Nat Inst Of Advanced Ind Scien	Photo field effect transistor and integrated photodetector using same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3714522A (en) *	1968-11-14	1973-01-30	Kogyo Gijutsuin Agency Of Ind	Semiconductor device having surface electric-field effect
US4284997A (en) *	1977-07-07	1981-08-18	Zaidan Hojin Handotai Kenkyu Shinkokai	Static induction transistor and its applied devices
JPS6020910B2 (ja) *	1977-07-07	1985-05-24	財団法人半導体研究振興会	静電誘導トランジスタ及び半導体集積回路
US4326210A (en) *	1977-09-26	1982-04-20	Sharp Kabushiki Kaisha	Light-responsive field effect mode semiconductor devices
JPS5546548A (en) *	1978-09-28	1980-04-01	Semiconductor Res Found	Electrostatic induction integrated circuit
JPS56107583A (en) *	1980-01-30	1981-08-26	Matsushita Electric Ind Co Ltd	Field effect transistor
JPS56124273A (en) *	1980-03-04	1981-09-29	Semiconductor Res Found	Semiconductor device
US4422087A (en) *	1980-06-03	1983-12-20	Xerox Corporation	Self-aligned short channel MESFET
JPH077844B2 (ja) *	1981-11-30	1995-01-30	財団法人半導体研究振興会	静電誘導型半導体光電変換装置

1982
- 1982-09-03 JP JP57153429A patent/JPS5943581A/ja active Granted
1983
- 1983-09-02 EP EP83902825A patent/EP0117874B1/de not_active Expired
- 1983-09-02 US US06/610,300 patent/US4613881A/en not_active Expired - Lifetime
- 1983-09-02 WO PCT/JP1983/000295 patent/WO1984001056A1/ja active IP Right Grant
- 1983-09-02 DE DE8383902825T patent/DE3381607D1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPS6259902B2 (de)	1987-12-14
JPS5943581A (ja)	1984-03-10
EP0117874A1 (de)	1984-09-12
EP0117874A4 (de)	1987-01-20
WO1984001056A1 (fr)	1984-03-15
EP0117874B1 (de)	1990-05-23
US4613881A (en)	1986-09-23

Publication	Publication Date	Title
DE3382709D1 (de)	1993-09-23	Fotovoltaischer wandler.
DE3788393D1 (de)	1994-01-20	Photoelektrischer Umformer.
DE3486462D1 (de)	1998-01-29	Lichtelektrischer Wandler
DE3382499D1 (de)	1992-03-05	Fotowandlerschaltung.
DE3168333D1 (en)	1985-02-28	Semiconductor photoelectric converter
DE3581561D1 (de)	1991-03-07	Waermebestaendiger photoelektrischer duennschicht-konverter.
DE3072175D1 (de)	1990-04-26	Halbleitervorrichtungen mit heterouebergang.
NL187415C (nl)	1991-09-16	Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
DE3751242D1 (de)	1995-05-24	Photoelektrischer Wandler.
FI833113L (fi)	1984-03-11	Silikon-kontrollerade vidhaeftningshindrande sammansaettningar, vilka inte innehaoller loesningsmed
DE3483769D1 (de)	1991-01-31	Halbleiterdiode.
ES278144Y (es)	1985-09-01	Anillo colector.
NL192900B (nl)	1997-12-01	Foto-elektrische halfgeleideromzetter.
NO159980C (no)	1989-03-01	Baereanordning.
ES517864A0 (es)	1983-10-16	Dispositivo fotovoltaico pindesilicio amorfo.
NL188125C (nl)	1992-04-01	Halfgeleiderfotodiode.
IT8322373A0 (it)	1983-08-02	Dispositivo semiconduttore.
DE3280111D1 (de)	1990-03-15	Halbleiter-gleichrichterdiode.
DE3688633D1 (de)	1993-08-05	Photoelektrischer wandler.
DE3788481D1 (de)	1994-01-27	Photoelektrischer Umformer.
DE3280176D1 (de)	1990-06-21	Photoelektrischer halbleiterumwandler.
DE3851275D1 (de)	1994-10-06	Photoelektrischer Umsetzer.
DE3381607D1 (de)	1990-06-28	Photoelektrischer umwandler mit halbleiter.
DE3484817D1 (de)	1991-08-22	Halbleiteranordnung.
DE3783507D1 (de)	1993-02-25	Zusammengesetztes halbleiterbauelement.

Legal Events

Date	Code	Title	Description
1991-06-20	8364	No opposition during term of opposition