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DE3379523D1 - One-dimensional semiconductor imaging device - Google Patents

One-dimensional semiconductor imaging device

Info

Publication number
DE3379523D1
DE3379523D1 DE8383112544T DE3379523T DE3379523D1 DE 3379523 D1 DE3379523 D1 DE 3379523D1 DE 8383112544 T DE8383112544 T DE 8383112544T DE 3379523 T DE3379523 T DE 3379523T DE 3379523 D1 DE3379523 D1 DE 3379523D1
Authority
DE
Germany
Prior art keywords
imaging device
dimensional semiconductor
semiconductor imaging
dimensional
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383112544T
Other languages
English (en)
Inventor
Junichi Nishizawa
Takashige Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3379523D1 publication Critical patent/DE3379523D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors
DE8383112544T 1982-12-13 1983-12-13 One-dimensional semiconductor imaging device Expired DE3379523D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57218586A JPS59107569A (ja) 1982-12-13 1982-12-13 一次元半導体撮像装置

Publications (1)

Publication Number Publication Date
DE3379523D1 true DE3379523D1 (en) 1989-05-03

Family

ID=16722270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383112544T Expired DE3379523D1 (en) 1982-12-13 1983-12-13 One-dimensional semiconductor imaging device

Country Status (4)

Country Link
US (1) US4574310A (de)
EP (1) EP0111346B1 (de)
JP (1) JPS59107569A (de)
DE (1) DE3379523D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107570A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59108372A (ja) * 1982-12-13 1984-06-22 Fuji Photo Film Co Ltd 半導体光検出装置及びその製造方法
DE3585516D1 (de) * 1984-12-26 1992-04-09 Canon Kk Bildsensoranordnung.
JPS61248567A (ja) * 1985-04-26 1986-11-05 Matsushita Electronics Corp 接合型電界効果トランジスタ
JPH0630392B2 (ja) * 1985-12-25 1994-04-20 新技術事業団 一次元半導体撮像装置
JPS62152162A (ja) * 1985-12-25 1987-07-07 Res Dev Corp Of Japan 一次元半導体撮像装置
JPH0644619B2 (ja) * 1986-07-17 1994-06-08 キヤノン株式会社 光電変換装置
JPS6331161A (ja) * 1986-07-24 1988-02-09 Tokyo Electric Co Ltd 光電変換装置
US4856367A (en) * 1987-04-15 1989-08-15 Kanzaki Kokyukoki Mfg., Co. Ltd. Driving power transmission
CN1040073C (zh) * 1989-12-25 1998-10-07 石川岛播磨重工业株式会社 轧机的板厚控制系统
JP2509127B2 (ja) * 1992-03-04 1996-06-19 財団法人半導体研究振興会 静電誘導デバイス
DE4331392A1 (de) * 1993-09-15 1995-03-16 Josef Dr Kemmer Unipolartransistor mit integrierter Rücksetzstruktur
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
JP2001264439A (ja) * 2000-03-17 2001-09-26 Olympus Optical Co Ltd 距離測定装置及び距離測定方法
GB0012137D0 (en) 2000-05-20 2000-07-12 Koninkl Philips Electronics Nv A semiconductor device
DE102006061994B4 (de) 2006-12-21 2011-05-05 Infineon Technologies Austria Ag Ladungskompensationsbauelement mit einer Driftstrecke zwischen zwei Elektroden und Verfahren zur Herstellung desselben

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326209A (en) * 1977-04-13 1982-04-20 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
JPS5918870B2 (ja) * 1977-05-15 1984-05-01 財団法人半導体研究振興会 半導体集積回路
US4236829A (en) * 1978-01-31 1980-12-02 Matsushita Electric Industrial Co., Ltd. Solid-state image sensor
JPS5515229A (en) * 1978-07-18 1980-02-02 Semiconductor Res Found Semiconductor photograph device
JPS5546548A (en) * 1978-09-28 1980-04-01 Semiconductor Res Found Electrostatic induction integrated circuit
JPS55138269A (en) * 1979-04-14 1980-10-28 Nippon Gakki Seizo Kk Integrated circuit device
JPS585086A (ja) * 1981-07-01 1983-01-12 Matsushita Electric Ind Co Ltd 固体撮像装置
JPS5813079A (ja) * 1981-07-16 1983-01-25 Olympus Optical Co Ltd イメ−ジセンサ
JPS58105672A (ja) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd 半導体撮像装置
JP2560038B2 (ja) * 1987-08-03 1996-12-04 日本合成ゴム株式会社 半導体素子の製造方法

Also Published As

Publication number Publication date
US4574310A (en) 1986-03-04
EP0111346B1 (de) 1989-03-29
JPH0454987B2 (de) 1992-09-01
EP0111346A3 (en) 1985-10-09
EP0111346A2 (de) 1984-06-20
JPS59107569A (ja) 1984-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition