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DE3376937D1 - Double-channel planar heterostructure semiconductor laser - Google Patents

Double-channel planar heterostructure semiconductor laser

Info

Publication number
DE3376937D1
DE3376937D1 DE8383109574T DE3376937T DE3376937D1 DE 3376937 D1 DE3376937 D1 DE 3376937D1 DE 8383109574 T DE8383109574 T DE 8383109574T DE 3376937 T DE3376937 T DE 3376937T DE 3376937 D1 DE3376937 D1 DE 3376937D1
Authority
DE
Germany
Prior art keywords
double
semiconductor laser
heterostructure semiconductor
channel planar
planar heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383109574T
Other languages
English (en)
Inventor
Ikuo Mito
Kohroh Kobayashi
Tetsuhiko Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3376937D1 publication Critical patent/DE3376937D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8383109574T 1982-09-27 1983-09-26 Double-channel planar heterostructure semiconductor laser Expired DE3376937D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57167963A JPS5957486A (ja) 1982-09-27 1982-09-27 埋め込み形半導体レ−ザ

Publications (1)

Publication Number Publication Date
DE3376937D1 true DE3376937D1 (en) 1988-07-07

Family

ID=15859280

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383109574T Expired DE3376937D1 (en) 1982-09-27 1983-09-26 Double-channel planar heterostructure semiconductor laser

Country Status (5)

Country Link
US (1) US4597085A (de)
EP (1) EP0111650B1 (de)
JP (1) JPS5957486A (de)
CA (1) CA1197001A (de)
DE (1) DE3376937D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8401172A (nl) * 1984-04-12 1985-11-01 Philips Nv Halfgeleiderlaser.
JPH0766994B2 (ja) * 1985-02-19 1995-07-19 シャープ株式会社 半導体レーザ素子
JPS61274385A (ja) * 1985-05-29 1986-12-04 Fujitsu Ltd 埋込型半導体レ−ザ
JPS61284987A (ja) * 1985-06-10 1986-12-15 Sharp Corp 半導体レ−ザ素子
GB8516853D0 (en) * 1985-07-03 1985-08-07 British Telecomm Manufacture of semiconductor structures
US4839900A (en) * 1985-08-21 1989-06-13 Sharp Kabushiki Kaisha Buried type semiconductor laser device
US4805178A (en) * 1986-03-28 1989-02-14 American Telephone And Telegraph Company, At&T Bell Laboratories Preservation of surface features on semiconductor surfaces
US4902644A (en) * 1986-03-28 1990-02-20 American Telephone And Telegraph Company At&T Bell Laboratories Preservation of surface features on semiconductor surfaces
JPS6393183A (ja) * 1986-10-08 1988-04-23 Sharp Corp 埋込型半導体レ−ザ素子
JPS6392078A (ja) * 1986-10-07 1988-04-22 Sharp Corp 半導体レ−ザ素子
JPS6393182A (ja) * 1986-10-08 1988-04-23 Sharp Corp 埋込型半導体レ−ザ素子
NL8603009A (nl) * 1986-11-27 1988-06-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
JPS63144589A (ja) * 1986-12-09 1988-06-16 Sharp Corp 半導体レ−ザ素子
JPS63169085A (ja) * 1987-01-05 1988-07-13 Nec Corp ２重チヤネル型プレ−ナ埋込み構造半導体レ−ザ
DE3714523A1 (de) * 1987-04-30 1988-11-10 Siemens Ag Laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung und verfahren zu deren herstellung
NL8702233A (nl) * 1987-09-18 1989-04-17 Philips Nv Dcpbh laser met goede temperatuurstabiliteit.
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
JP2973794B2 (ja) * 1993-09-24 1999-11-08 トヨタ自動車株式会社 半導体レーザー
JP2871635B2 (ja) * 1996-07-24 1999-03-17 日本電気株式会社 半導体レーザおよびその製造方法
US5956360A (en) * 1997-03-28 1999-09-21 Lucent Technologies Inc. Uncooled lasers with reduced low bias capacitance effect
GB0126642D0 (en) * 2001-11-06 2002-01-02 Denselight Semiconductors Pte Design of current blocking structure to improve semiconductor laser performance
JP2003309330A (ja) 2002-04-12 2003-10-31 Sumitomo Electric Ind Ltd 半導体光素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
US4340967A (en) * 1980-06-02 1982-07-20 Bell Telephone Laboratories, Incorporated Semiconductor lasers with stable higher-order modes parallel to the junction plane
EP0083697B1 (de) * 1981-10-19 1987-09-09 Nec Corporation Zweikanaliger Planar-vergrabene-Heterostruktur-Laser
US4426701A (en) * 1981-12-23 1984-01-17 Rca Corporation Constricted double heterostructure semiconductor laser

Also Published As

Publication number Publication date
EP0111650A2 (de) 1984-06-27
EP0111650B1 (de) 1988-06-01
JPS6350873B2 (de) 1988-10-12
US4597085A (en) 1986-06-24
CA1197001A (en) 1985-11-19
EP0111650A3 (en) 1986-03-12
JPS5957486A (ja) 1984-04-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition