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DE3364511D1 - Semiconductor laser device with a graded-index guide, and method of realising such a device - Google Patents

Semiconductor laser device with a graded-index guide, and method of realising such a device

Info

Publication number
DE3364511D1
DE3364511D1 DE8383401029T DE3364511T DE3364511D1 DE 3364511 D1 DE3364511 D1 DE 3364511D1 DE 8383401029 T DE8383401029 T DE 8383401029T DE 3364511 T DE3364511 T DE 3364511T DE 3364511 D1 DE3364511 D1 DE 3364511D1
Authority
DE
Germany
Prior art keywords
realising
graded
semiconductor laser
index guide
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383401029T
Other languages
English (en)
Inventor
Cremoux Baudouin De
Robert Blondeau
Jean Ricciardi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3364511D1 publication Critical patent/DE3364511D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8383401029T 1982-06-04 1983-05-24 Semiconductor laser device with a graded-index guide, and method of realising such a device Expired DE3364511D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8209735A FR2528234A1 (fr) 1982-06-04 1982-06-04 Dispositif semi-conducteur photoemetteur de type laser a guidage par gradient d'indice, et procede de realisation d'un tel dispositif

Publications (1)

Publication Number Publication Date
DE3364511D1 true DE3364511D1 (en) 1986-08-21

Family

ID=9274630

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383401029T Expired DE3364511D1 (en) 1982-06-04 1983-05-24 Semiconductor laser device with a graded-index guide, and method of realising such a device

Country Status (6)

Country Link
EP (1) EP0096613B1 (de)
JP (1) JPS58219772A (de)
KR (1) KR840005276A (de)
CA (1) CA1215160A (de)
DE (1) DE3364511D1 (de)
FR (1) FR2528234A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563051B1 (fr) * 1984-04-13 1987-08-07 Telecommunications Sa Diode laser a confinement electrique par jonction inverse
US4634928A (en) * 1985-04-19 1987-01-06 Trw Inc. Superluminescent light-emitting diode and related method
DE3728566A1 (de) * 1987-08-27 1989-03-09 Telefunken Electronic Gmbh Optoelektronisches halbleiterbauelement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser

Also Published As

Publication number Publication date
KR840005276A (ko) 1984-11-05
CA1215160A (en) 1986-12-09
FR2528234A1 (fr) 1983-12-09
EP0096613B1 (de) 1986-07-16
FR2528234B1 (de) 1985-05-17
EP0096613A1 (de) 1983-12-21
JPS58219772A (ja) 1983-12-21

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DE3364511D1 (en) Semiconductor laser device with a graded-index guide, and method of realising such a device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee