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DE2543909A1 - Elektrische schaltung mit einem hochfrequenzthyristor - Google Patents

Elektrische schaltung mit einem hochfrequenzthyristor

Info

Publication number
DE2543909A1
DE2543909A1 DE19752543909 DE2543909A DE2543909A1 DE 2543909 A1 DE2543909 A1 DE 2543909A1 DE 19752543909 DE19752543909 DE 19752543909 DE 2543909 A DE2543909 A DE 2543909A DE 2543909 A1 DE2543909 A1 DE 2543909A1
Authority
DE
Germany
Prior art keywords
thyristor
zone
gate
layer
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19752543909
Other languages
German (de)
English (en)
Inventor
Patrick De Dipl Ing Bruyne
Roland Dr Sittig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Original Assignee
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE, BBC Brown Boveri AG Switzerland filed Critical BBC BROWN BOVERI and CIE
Publication of DE2543909A1 publication Critical patent/DE2543909A1/de
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/523Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with LC-resonance circuit in the main circuit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/241Asymmetrical thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
DE19752543909 1975-09-09 1975-10-01 Elektrische schaltung mit einem hochfrequenzthyristor Ceased DE2543909A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1169575A CH589942A5 (xx) 1975-09-09 1975-09-09

Publications (1)

Publication Number Publication Date
DE2543909A1 true DE2543909A1 (de) 1977-03-17

Family

ID=4375973

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752543909 Ceased DE2543909A1 (de) 1975-09-09 1975-10-01 Elektrische schaltung mit einem hochfrequenzthyristor

Country Status (7)

Country Link
JP (1) JPS6016104B2 (xx)
CH (1) CH589942A5 (xx)
DE (1) DE2543909A1 (xx)
FR (1) FR2324125A1 (xx)
GB (1) GB1558886A (xx)
NO (1) NO763077L (xx)
SE (1) SE416600B (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176766A (en) * 1981-04-03 1982-10-30 Westinghouse Electric Corp Gate control switch
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
JPS6455005A (en) * 1987-08-25 1989-03-02 Yao Seisakusho Kk End processor for covered wire
JPH09181092A (ja) * 1995-12-27 1997-07-11 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489946A (fr) * 1965-07-29 1967-07-28 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
DE1934866A1 (de) * 1968-08-05 1970-05-14 Rca Corp Halbleiterbauelement
NL165333C (nl) * 1969-05-20 Bbc Brown Boveri & Cie Bestuurbaar halfgeleiderelement met vier laagvormige zones van afwisselend geleidingstype.

Also Published As

Publication number Publication date
SE416600B (sv) 1981-01-19
FR2324125A1 (fr) 1977-04-08
FR2324125B1 (xx) 1980-05-09
JPS5235574A (en) 1977-03-18
JPS6016104B2 (ja) 1985-04-23
NO763077L (xx) 1977-03-10
SE7609773L (sv) 1977-03-10
CH589942A5 (xx) 1977-07-29
GB1558886A (en) 1980-01-09

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Legal Events

Date Code Title Description
8120 Willingness to grant licences paragraph 23
8110 Request for examination paragraph 44
8131 Rejection