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FR2324125A1 - Montage electrique a thyristor haute frequence - Google Patents

Montage electrique a thyristor haute frequence

Info

Publication number
FR2324125A1
FR2324125A1 FR7626908A FR7626908A FR2324125A1 FR 2324125 A1 FR2324125 A1 FR 2324125A1 FR 7626908 A FR7626908 A FR 7626908A FR 7626908 A FR7626908 A FR 7626908A FR 2324125 A1 FR2324125 A1 FR 2324125A1
Authority
FR
France
Prior art keywords
high frequency
electrical mounting
frequency thyristor
thyristor electrical
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626908A
Other languages
English (en)
Other versions
FR2324125B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2324125A1 publication Critical patent/FR2324125A1/fr
Application granted granted Critical
Publication of FR2324125B1 publication Critical patent/FR2324125B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/523Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with LC-resonance circuit in the main circuit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/241Asymmetrical thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
FR7626908A 1975-09-09 1976-09-07 Montage electrique a thyristor haute frequence Granted FR2324125A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1169575A CH589942A5 (fr) 1975-09-09 1975-09-09

Publications (2)

Publication Number Publication Date
FR2324125A1 true FR2324125A1 (fr) 1977-04-08
FR2324125B1 FR2324125B1 (fr) 1980-05-09

Family

ID=4375973

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626908A Granted FR2324125A1 (fr) 1975-09-09 1976-09-07 Montage electrique a thyristor haute frequence

Country Status (7)

Country Link
JP (1) JPS6016104B2 (fr)
CH (1) CH589942A5 (fr)
DE (1) DE2543909A1 (fr)
FR (1) FR2324125A1 (fr)
GB (1) GB1558886A (fr)
NO (1) NO763077L (fr)
SE (1) SE416600B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144876A2 (fr) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Dispositif à semi-conducteurs
EP0782199A3 (fr) * 1995-12-27 1999-07-28 Kabushiki Kaisha Toshiba Dispositif semi-conducteur à tension élevée et procédé de fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176766A (en) * 1981-04-03 1982-10-30 Westinghouse Electric Corp Gate control switch
JPS6455005A (en) * 1987-08-25 1989-03-02 Yao Seisakusho Kk End processor for covered wire

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489946A (fr) * 1965-07-29 1967-07-28 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
FR2015064A1 (fr) * 1968-08-05 1970-04-24 Rca Corp
FR2043541A7 (fr) * 1969-05-20 1971-02-19 Bbc Brown Boveri & Cie

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489946A (fr) * 1965-07-29 1967-07-28 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
FR2015064A1 (fr) * 1968-08-05 1970-04-24 Rca Corp
FR2043541A7 (fr) * 1969-05-20 1971-02-19 Bbc Brown Boveri & Cie

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV8011/66 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144876A2 (fr) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Dispositif à semi-conducteurs
EP0144876A3 (en) * 1983-12-07 1985-07-03 Bbc Aktiengesellschaft Brown, Boveri & Cie. Semiconductor device
EP0782199A3 (fr) * 1995-12-27 1999-07-28 Kabushiki Kaisha Toshiba Dispositif semi-conducteur à tension élevée et procédé de fabrication

Also Published As

Publication number Publication date
SE416600B (sv) 1981-01-19
FR2324125B1 (fr) 1980-05-09
JPS5235574A (en) 1977-03-18
DE2543909A1 (de) 1977-03-17
JPS6016104B2 (ja) 1985-04-23
NO763077L (fr) 1977-03-10
SE7609773L (sv) 1977-03-10
CH589942A5 (fr) 1977-07-29
GB1558886A (en) 1980-01-09

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Legal Events

Date Code Title Description
ST Notification of lapse