[go: up one dir, main page]

DE1521353A1 - Anordnung zur Herstellung eines Oberflaechenschutzes bei Festkoerpern - Google Patents

Anordnung zur Herstellung eines Oberflaechenschutzes bei Festkoerpern

Info

Publication number
DE1521353A1
DE1521353A1 DE19631521353 DE1521353A DE1521353A1 DE 1521353 A1 DE1521353 A1 DE 1521353A1 DE 19631521353 DE19631521353 DE 19631521353 DE 1521353 A DE1521353 A DE 1521353A DE 1521353 A1 DE1521353 A1 DE 1521353A1
Authority
DE
Germany
Prior art keywords
arrangement according
medium
electrode
treated
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19631521353
Other languages
German (de)
English (en)
Inventor
Dr Rer Nat Kurt Lertes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of DE1521353A1 publication Critical patent/DE1521353A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
DE19631521353 1963-10-15 1963-10-15 Anordnung zur Herstellung eines Oberflaechenschutzes bei Festkoerpern Pending DE1521353A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL0046086 1963-10-15

Publications (1)

Publication Number Publication Date
DE1521353A1 true DE1521353A1 (de) 1969-07-24

Family

ID=7271442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19631521353 Pending DE1521353A1 (de) 1963-10-15 1963-10-15 Anordnung zur Herstellung eines Oberflaechenschutzes bei Festkoerpern

Country Status (5)

Country Link
CH (1) CH440906A (xx)
DE (1) DE1521353A1 (xx)
FR (1) FR1411517A (xx)
GB (1) GB1093815A (xx)
NL (1) NL6411951A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015694A2 (en) * 1979-03-09 1980-09-17 Fujitsu Limited Method for forming an insulating film on a semiconductor substrate surface

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4420497A (en) * 1981-08-24 1983-12-13 Fairchild Camera And Instrument Corporation Method of detecting and repairing latent defects in a semiconductor dielectric layer
CH684831A5 (de) * 1991-12-11 1995-01-13 Alusuisse Lonza Services Ag Vorrichtung zur Herstellung von extrusionsbeschichteten Laminaten.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015694A2 (en) * 1979-03-09 1980-09-17 Fujitsu Limited Method for forming an insulating film on a semiconductor substrate surface
EP0015694A3 (en) * 1979-03-09 1980-11-12 Fujitsu Limited Method for forming an insulating film on a semiconductor substrate surface

Also Published As

Publication number Publication date
GB1093815A (en) 1967-12-06
FR1411517A (fr) 1965-09-17
NL6411951A (xx) 1965-04-20
CH440906A (de) 1967-07-31

Similar Documents

Publication Publication Date Title
DE2614951B2 (de) Verfahren zur Herstellung einer Flüssigkristall-Zelle
DE2425382A1 (de) Verfahren zur herstellung von isolierschicht-feldeffekttransistoren
DE2601656A1 (de) Hochohmige metallkeramikschicht und verfahren zu deren herstellung
DE2722900C3 (de) Verfahren zur Herstellung einer eine Flüssigkristallschicht homöotrop orientierenden, Siliciumoxid enthaltenden Schicht
DE2636961A1 (de) Verfahren zur herstellung eines halbleiterspeicherelementes
DE1544190C3 (de) Verfahren zum Einführen von Störstellen in Diamant
DE840418C (de) Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter
DE1515884B2 (de) Verfahren zum abgleich des widerstandswertes eines in monolithischer technik hergestellten widerstandes
DE2538331C3 (de) Flüssigkristallanzeigeelement
DE1514359B1 (de) Feldeffekt-Halbleiterbauelement und Verfahren zu seiner Herstellung
DE1521353A1 (de) Anordnung zur Herstellung eines Oberflaechenschutzes bei Festkoerpern
DE2613924B2 (de) Verfahren zur Herstellung einer FeIdeffekt-Flüssigkristallanzeigezelle
DE2454413A1 (de) Verfahren zur herstellung einer wiedergabevorrichtung mit einer fluessigkristallschicht
DE1275221B (de) Verfahren zur Herstellung eines einen Tunneleffekt aufweisenden elektronischen Festkoerperbauelementes
DE2019091A1 (de) Verfahren zur Herstellung stabiler Duennfilmwiderstaende
DE2715242A1 (de) Verfahren zum herstellen einer kathode
DE1279242B (de) Elektronisches Festkoerperbauelement zum Schalten
DE1195135B (de) Verfahren zur Verbesserung der elektrischen Leitfaehigkeit von auf Unterlagen, wie Glas und Kunststoffen, insbesondere durch Vakuum-bedampfen aufgebrachten duennen, licht-durchlaessigen oxydischen Schichten
DE1194064B (de) Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium
DE1614015B1 (de) Verfahren zur behandlung und zum fuellen bei der herstellung von fuer hohe arbeitstemperaturen geeigneten halogen-geiger-mueller-zaehlrohren
DE851227C (de) Selengleichrichter
DE803919C (de) Verfahren zur Herstellung einer Kathode einer elektrischen Entladungsroehre
DE901447C (de) Entladungsroehre mit zu einem Elektronenstrahl gebuendelter Entladung
DE2234679A1 (de) Verfahren zur herstellung der elektroden einer gasentladungs-anzeigevorrichtung
DE4103959A1 (de) Verfahren zur herstellung von beschichteten werkstuecken

Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971