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DE1242298B - Tragplatte fuer ein Sperrschichtelektrodensystem, das einen halbleitenden Einkristall aus Germanium oder Silizium enthaelt - Google Patents

Tragplatte fuer ein Sperrschichtelektrodensystem, das einen halbleitenden Einkristall aus Germanium oder Silizium enthaelt

Info

Publication number
DE1242298B
DE1242298B DEN27010A DEN0027010A DE1242298B DE 1242298 B DE1242298 B DE 1242298B DE N27010 A DEN27010 A DE N27010A DE N0027010 A DEN0027010 A DE N0027010A DE 1242298 B DE1242298 B DE 1242298B
Authority
DE
Germany
Prior art keywords
support plate
single crystal
germanium
electrode system
barrier electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN27010A
Other languages
English (en)
Inventor
Theo Willem Willemse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1242298B publication Critical patent/DE1242298B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Description

BUNDESREPUBLIK DEUTSCHLAND
DEUTSCHES
PATENTAMT
AUSLEGESCHRIFT
Int. Cl.:
HOIl
Deutsche Kl.: 21 g -11/02
Nummer: 1242 298
Aktenzeichen: N 27010 VIII c/21 g
Anmeldetag: 28. Juni 1955
Auslegetag: 15. Juni 1967
Die Erfindung bezieht sich auf ein Sperrschichtelektrodensystem, das einen halbleitenden Einkristall aus Germanium oder Silizium enthält, insbesondere Kristalldiode oder Transistor, wobei der halbleitende Einkristall auf einer Wärme ableitenden Tragplatte festgelötet ist.
Es ist bekannt, daß bei solchen Systemen die Gefahr eines Bruches im Halbleiterkörper besteht, unter anderem infolge seiner Sprödigkeit und seines abweichenden Ausdehnungskoeffizienten gegenüber dem Material der Tragplatte. Man hat daher einen Einkristall aus Germanium auf einer Tragplatte befestigt, die aus einer Legierung von 54 % Eisen, 29 % Nickel und 17% Kobalt besteht. Der lineare Ausdehnungskoeffizient dieser Legierung beträgt 4 · 10~6 im harten Zustand und 6 · 10~6 im ausgeglühten Zustand. Diese Werte nähern sich daher demjenigen für Germanium. So läßt sich im allgemeinen bei einem bestimmten Halbleiter ein Metall oder eine Legierung mit einem angemessenen Ausdehnungskoeffizienten für die Tragplatte wählen. An das Material für eine Tragplatte können aber noch weitere Anforderungen gestellt werden. Zur Erzielung einer guten Kühlung ist eine hohe Wärmeleitfähigkeit erwünscht. Das Material muß weiterhin gegen die Ätzflüssigkeiten in für praktische Zwecke ausreichendem Maß beständig sein, durch die der halbleitende Körper nach dem Löten gewöhnlich gereinigt wird. Außerdem darf das vom Ätzmittel etwa gelöste Material der Tragplatte nicht als störende Verunreinigung im Halbleiterkörper wirken.
Diesen Anforderungen kann die obenerwähnte Eisen-Nickel-Kobalt-Legierung nicht entsprechen.
Bei dem Sperrschichtelektrodensystem nach der Erfindung wird daher eine Tragplatte verwendet, die aus Molybdän, Wolfram oder Chrom besteht und vergoldet ist. Die Ausdehnungskoeffizienten dieser Metalle sind:
2-10°
Chrom 6,8
Molybdän 4,9
Wolfram 4,3
Diese Ausdehnungskoeffizienten haben somit einen solchen Wert, daß für einen aufgelöteten Germaniumoder Silizium-Einkristall die Bruchgefahr bei Temperaturschwankungen sehr gering ist.
Besonders geeignet sind Molybdän und Wolfram wegen ihrer hohen Wärmeleitfähigkeit, so daß die im halbleitenden Körper bei Stromdurchgang entwickelte Wärme schnell abgeleitet werden kann.
Tragplatte für ein Sperrschichtelektrodensystem, das einen halbleitenden Einkristall aus
Germanium oder Silizium enthält
Anmelder:
N. V. Philips' Gloeilampenfabrieken,
Eindhoven (Niederlande)
Vertreter:
Dr. P. Roßbach, Patentanwalt,
Hamburg 1, Mönckebergstr. 7
Als Erfinder benannt:
Theo Willem Willemse, Delft (Niederlande)
Beanspruchte Priorität:
Niederlande vom 1. Juli 1954 (188 893)
Bei der üblichen Ätzbehandlung sind diese Metalle für praktische Zwecke hinreichend beständig, und sie rufen keine störenden Verunreinigungen im Halbleiterkörper hervor.
Diese Metalle haben ferner eine hohe mechanische Festigkeit, so daß, wenn der halbleitende Körper unter Zwischenfügung einer Tragplatte aus diesen Metallen auf einer anderen Platte, z. B. einer Kühlplatte aus Kupfer, festgelötet wird, die Formänderung der Tragplatte gegenüber der Formänderung der Kühlplatte aus Kupfer gering ist.
Für einen guten Wärmeübergang muß eine gut haftende Lötschicht zwischen dem halbleitenden Körper und der Tragplatte angebracht werden. Molybdän, Wolfram und Chrom lassen sich praktisch nicht oder nur schwierig löten.
Bei einem Sperrschichtelektrodensystem der eingangs erwähnten Art kann dieser Nachteil vermieden werden, wenn eine nach der Erfindung vorgeschlagene Tragplatte vorgesehen ist.
Die Erfindung wird an Hand eines in der Zeichnung dargestellten Ausführungsbeispieles näher erläutert, in der eine Diode in vergrößertem Maßstab dargestellt ist.
Mit 1 ist die Tragplatte bezeichnet, die z. B. aus Molybdän besteht. Diese Platte ist mit einer dünnen Goldschicht 2 bedeckt, die zur besseren Haftung einer
.. ■ . 709 590/229
dünnen Lötschicht 3 dient, durch die der halbleitende Körper 4, z. B. ein Germanium-Einkristall, befestigt ist. Die Goldschicht kann auf galvanischem Wege aufgebracht werden.
Als Lötmaterial kann Zinn verwendet werden, dem in an sich bekannter Weise Donatoren oder Akzeptoren zugesetzt sein können.
Die Tragplatte ist selbst wieder auf einer Kühlplatte 5 festgelötet, die z. B. aus Kupfer, Aluminium, Nickel oder Eisen besteht. Als Lötmittel 6 kann Silber verwendet werden.
Naturgemäß kann die Unterseite der Tragplatte wieder vergoldet sein; in diesem Fall ist die Zahl der möglichen Lötmittel viel größer.

Claims (2)

Patentansprüche:
1. Sperrschichtelektrodensystem, das einen halbleitenden Einkristall aus Germanium oder Silizium enthält, wobei der halbleitende Einkristall auf einer Wärme ableitenden Tragplatte festgelötet ist, dadurchge kennzeichnet, daß die Tragplatte aus Molybdän, Wolfram oder Chrom besteht und vergoldet ist.
2. Sperrschichtelektrodensystem nach Anspruch 1, dadurch gekennzeichnet, daß die Tragplatte auf einer Kühlplatte festgelötet ist.
In Betracht gezogene Druckschriften:
Deutsche Auslegeschrift Nr. 1 212 639.
Hierzu 1 Blatt Zeichnungen
709 590/229 6.67 © Bundesdruckerei Berlin
DEN27010A 1954-07-01 1955-06-28 Tragplatte fuer ein Sperrschichtelektrodensystem, das einen halbleitenden Einkristall aus Germanium oder Silizium enthaelt Pending DE1242298B (de)

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NL188893 1954-07-01

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DE1242298B true DE1242298B (de) 1967-06-15

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DEN27010A Pending DE1242298B (de) 1954-07-01 1955-06-28 Tragplatte fuer ein Sperrschichtelektrodensystem, das einen halbleitenden Einkristall aus Germanium oder Silizium enthaelt
DE19551212639 Pending DE1212639B (de) 1954-07-01 1955-06-28 Sperrschichtelektrodensystem, das einen halbleitenden einkristall aus germanium oder silizium enthaelt

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US (1) US2971251A (de)
BE (1) BE539442A (de)
CH (1) CH333704A (de)
DE (2) DE1242298B (de)
ES (1) ES222691A1 (de)
FR (1) FR1126817A (de)
GB (1) GB772583A (de)
NL (1) NL107577C (de)

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Also Published As

Publication number Publication date
CH333704A (de) 1958-10-31
US2971251A (en) 1961-02-14
FR1126817A (fr) 1956-12-03
GB772583A (en) 1957-04-17
BE539442A (de)
NL107577C (de)
ES222691A1 (es) 1956-01-01
DE1212639B (de) 1966-03-17

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