DE1237942B - Device for holding disc-shaped workpieces made of semiconductor material by suction - Google Patents
Device for holding disc-shaped workpieces made of semiconductor material by suctionInfo
- Publication number
- DE1237942B DE1237942B DE1962S0080487 DES0080487A DE1237942B DE 1237942 B DE1237942 B DE 1237942B DE 1962S0080487 DE1962S0080487 DE 1962S0080487 DE S0080487 A DES0080487 A DE S0080487A DE 1237942 B DE1237942 B DE 1237942B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- layer
- porous
- vacuum vessel
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 239000000463 material Substances 0.000 title claims description 11
- 235000012431 wafers Nutrition 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000006748 scratching Methods 0.000 claims description 6
- 230000002393 scratching effect Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims 6
- 229910003460 diamond Inorganic materials 0.000 claims 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 241001674044 Blattodea Species 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 229920001821 foam rubber Polymers 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000010985 leather Substances 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000005373 porous glass Substances 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000007779 soft material Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000002604 ultrasonography Methods 0.000 claims 1
- 241000021559 Dicerandra Species 0.000 description 2
- 235000010654 Melissa officinalis Nutrition 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000865 liniment Substances 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. Cl.:Int. Cl .:
Nummer:
Aktenzeichen:
Anmeldetag:
Auslegetag:Number:
File number:
Registration date:
Display day:
B28dB28d
Deutsche Kl.: 8Od-2German class: 8Od- 2
1237942
S80487Ib/80d
19. Juli 1962
30. März 19671237942
S80487Ib / 80d
July 19, 1962
March 30, 1967
Die Erfindung bezieht sich auf eine Vorrichtung zum Haltern scheibenförmiger Werkstücke aus Halbleitermaterial durch Ansaugen an eine ebene, mit Öffnungen für den Durchtritt von Luft versehene feste Auflage.The invention relates to a device for holding disc-shaped workpieces made of semiconductor material by suction on a flat one provided with openings for the passage of air fixed edition.
Kristalle aus Halbleiterstoffen, insbesondere Einkristalle, fallen bei den meisten zur Darstellung hochreinen bzw. dotierten Halbleitermaterials gebräuchlichen Prozessen als stabförmige Körper an. Zur Weiterbehandlung werden dann diese Körper in Scheiben zersägt oder gespalten. Die erhaltenen Scheiben werden ihrerseits wiederum in Teilstücke, die der Größe der zu fertigenden Halbleiterbauelemente entsprechen, unterteilt. Bei der serienweisen Fertigung von Halbleiterbauelementen ist es dabei vielfach zweckmäßig, einen großen Teil der zur Fertigung der Bauelemente dienenden Schritte an einem solchen flachen Halbleiterkörper vorzunehmen und die Auftrennung dieses flachen Halbleiterkörpers in die den einzelnen Bauelementen entsprechenden Stücke möglichst hinauszuschieben. Der Grund hierfür liegt vor allem darin, daß größere Halbleiterscheiben für eine Reihe von Fertigungsprozessen wesentlich handlicher als die winzigen Halbleiterstücke sind, die den Halbleiterkörper von modernen Halbleiterbauelementen bilden.Crystals made of semiconductor materials, in particular single crystals, fall for most of the display high-purity or doped semiconductor material common processes as a rod-shaped body. These bodies are then sawn or split into slices for further treatment. The received In turn, wafers are subdivided into sections that correspond to the size of the semiconductor components to be manufactured. In the case of the series Production of semiconductor components, it is often expedient to use a large part of the To carry out the steps serving to manufacture the components on such a flat semiconductor body and the separation of this flat semiconductor body into those corresponding to the individual components Postpone pieces if possible. The reason for this is mainly that larger semiconductor wafers for a number of manufacturing processes much more manageable than the tiny semiconductor pieces which form the semiconductor body of modern semiconductor components.
So können die bei dem Herstellen von Mesatransistoren erforderlichen Schritte des Vordiffundierens, des Aufdampfens von Elektrodenpaaren und des Einlegierens an einer größeren Halbleiterscheibe von 1 bis 2 cm Durchmesser wesentlich präziser und einfacher durchgeführt werden, als dies bei einem Halbleiterstück der Fall ist, dessen größter Durchmesser 1 bis 2 mm ist. Um das Halbleitermaterial besser ausnutzen zu können, werden dann, z. B. auf einer Halbleiterscheibe von 1 bis 2 cm Durchmesser, je nach Größe der herzustellenden Bauelemente eine mehr oder weniger große Anzahl von Elektrodenpaaren nach bekannten Verfahren aufgedampft und einlegiert. Erst dann werden die Halbleiterscheibe in eine Anzahl gleicher Stücke mit je einem Elektrodenpaar aufgeteilt und die einzelnen Stücke durch Auflöten auf eine metallische, insbesondere gleichzeitig als Gehäuseteil dienende Platte mit der erforderlichen dritten Elektrode versehen. Auf diese Weise erzielt man eine beachtliche Erleichterung der Fertigung sowie eine erheblich geringere Streuung der elektrischen Eigenschaften der erhaltenen Transistoren. In this way, the steps of prediffusion required in the manufacture of mesa transistors, the vapor deposition of pairs of electrodes and the alloying on a larger semiconductor wafer from 1 to 2 cm in diameter can be carried out much more precisely and easily than with one Semiconductor piece is the case, the largest diameter of which is 1 to 2 mm. About the semiconductor material to be able to better exploit, z. B. on a semiconductor wafer with a diameter of 1 to 2 cm, Depending on the size of the components to be produced, a more or less large number of electrode pairs vapor-deposited and alloyed using known methods. Only then are the semiconductor wafers in a number of equal pieces, each with a pair of electrodes, and the individual pieces by soldering on a metallic plate, in particular serving as a housing part at the same time, with the required third electrode provided. In this way one achieves a considerable facilitation of the production as well as a considerably lower spread of the electrical properties of the transistors obtained.
Um jedoch den genannten Vorteil nicht wieder dadurch zu verlieren, daß bei der Zerteilung der
Halbleiterscheiben durch Beschädigung des HaIb-Vorrichtung zum Haltern scheibenförmiger
Werkstücke aus Halbleitermaterial durch
AnsaugenHowever, in order not to lose the advantage mentioned again by the fact that when the semiconductor wafers are broken up due to damage to the halving device for holding the wafers
Workpieces made of semiconductor material
Suction
Anmelder:Applicant:
Siemens Aktiengesellschaft, Berlin und München, München 2, Wittelsbacherplatz 2Siemens Aktiengesellschaft, Berlin and Munich, Munich 2, Wittelsbacherplatz 2
Als Erfinder benannt:Named as inventor:
Dipl.-Phys. Winfried Meer, MünchenDipl.-Phys. Winfried Meer, Munich
leitermaterials unerwünschte Verluste auftreten, ist ein sorgfältiges Arbeiten bei der Zerteilung der Halbleiterscheiben notwendig. Man bedient sich hierbei zweckmäßig der z. B. beim Glasschneiden üblichen Technik des Brechens, nachdem man die beabsichtigten Bruchstellen durch Anritzen markiert hat. Da die zu zerteilenden Scheiben im allgemeinen sehr dünn sind, d. h. eine Stärke von größenordnungsmäßig einigen 100 μ, ζ. B. von 150 bis 250 μ, besitzen, ist ein Einspannen während des Ritzens sehr gefährlich. Um dennoch die für das Anritzen erforderliche Maßhaltigkeit einhalten zu können, hat man sich dadurch geholfen, daß man die flachen Halbleiterscheiben auf eine insbesondere aus Glas bestehende gereinigte ebene Unterlage mit Kanada-Balsam aufgekittet und dann das zu der gewünschten Aufteilung führende System von Linien auf die Halbleiterscheibe aufgeritzt hat. Nach erfolgtem Anritzen wurde dann die Glasunterlage mit der anhaftenden Halbleiterscheibe in eine den Kanada-Balsam lösende, z. B. aus Trichloräthylen bestehende Flüssigkeit gebracht, welche gleichzeitig durch Ultraschallschwingungen angeregt wurde. Bei entsprechender Intensität der Ultraschallschwingungen wird die von der Glasscheibe im Flüssigkeitsbad abgelöste Halbleiterscheibe längs der eingeritzten Linien zerbrochen. Conductor material undesirable losses occur, is a careful work when dividing the Semiconductor wafers necessary. It is useful to use the z. B. usual when cutting glass Breaking technique after marking the intended break point by scoring Has. Since the slices to be cut are generally very thin, i. H. a strength of the order of magnitude some 100 μ, ζ. B. from 150 to 250 μ, is a clamping during the scratching very dangerous. In order to still be able to maintain the dimensional accuracy required for the scoring, has one helped oneself by the fact that one the flat semiconductor wafers on one in particular made of glass Existing, cleaned, level surface puttied on with Canada balm and then that to the desired Division leading system of lines scratched on the semiconductor wafer. After the scoring has been completed The glass underlay with the adhering semiconductor wafer was then placed in a Canada balm dissolving, z. B. brought from trichlorethylene existing liquid, which at the same time by ultrasonic vibrations was stimulated. With a corresponding intensity of the ultrasonic vibrations, the Semiconductor wafer detached from the glass in the liquid bath broken along the incised lines.
Als Stand der Technik ist ferner neben den bekannten Saugpipetten für den Transport von Werkstücken für Halbleiterzwecke auf die sogenannten Vakuumverspannungsvorrichtungen hinzuweisen, bei denen das Werkstück an einem Transportorgan bzw.In addition to the known suction pipettes for the transport of workpieces, the state of the art refer to the so-called vacuum tensioning devices for semiconductor purposes, at which the workpiece is on a conveyor or
709 547/10709 547/10
Claims (5)
geholfen, die zu ritzende und zu zerteilende Halb- Die Technik des Einritzens ist bekannt. Der anleiterscheibe an einer Arbeitsunterlage festzukleben. zuwendende Druck der Diamantspitze muß natürlich Es besteht ohne weiteres die Möglichkeit, das An- 5 der SprÖdigkeit sowohl des Diamants als äucfc des kleben zu vermeiden und das Werkstück mittels der Halbleitermaterials Rechnung tragen. Er ist zweckbekannten pneumatischen Werkstückhalter zu hai- mäßig so einzustellen, daß die Linien eine Tiefe von tern. Die bekannten Vorrichtungen bestehen aus etwa Va bis 1 μ erhalten.is recorded on a working document. When creating arbitrarily curved incised lines in the heating of semiconductor wafers, one has to take advantage of semiconductor wafers,
helped to cut and cut the half The technique of scratching is well known. To glue the instruction disc to a work surface. The pressure applied by the diamond tip must of course. There is easily the possibility of avoiding the brittleness of both the diamond and the sticking and taking the workpiece into account by means of the semiconductor material. The pneumatic workpiece holder, which is known for its purpose, is to be adjusted in such a way that the lines have a depth of tern. The known devices consist of about Va to 1 μ obtained.
Kraft kann durch entsprechende Bemessung der Als Unterlage wird ein Unterdruckgefäß 31 verSaugleistung der Pumpe bzw. durch entsprechende 40 wendet, welches über einen Evaküierungsstützeö 31' Verminderung der von der Halbleiterscheibe nicht an eine Vakuumpumpe, z.B. eine Wasserstrahl'· bedeckten Fläche der porösen Glasschicht 2 ohne pumpe, angeschlossen ist. In ähnlicher Weise, wi* weiteres so eingestellt werden, daß die Halbleiter- das Unterdruckgefäß bei der Vorrichtung gemäß platte 4 durch die beim Anritzen auftretenden me- F i g. 1, ist auch das Unterdruckgefäß in diesem Fall chanischen Kräfte nicht aus ihrer Stellung gerückt 45 mit einer porösen festen Schicht 32, z. B. einer Gl&s* werden kann. fritte, abgedeckt. Auf die Glasfritte ist eine wedelte,With regard to an expedient implementation, the fragments of the FIG. 1 pointed out. A space formed by a sub-divided semiconductor wafer in a completely disorderly pressure vessel 1 is due to a porous, wet state at the bottom of the applied liquid hard layer 2 with a flat-ground surface (outdoor bath. In most cases, however, it is zw & ekfläche) completed. Layer 2 consists e.g. B. from moderate, if the pieces obtained without re-sintered glass or quartz powder, in particular orientation, as it is often necessary, üitt Ait a glass frit. When the semiconductor pieces are actuated to bring the semiconductor pieces to the position required for the vacuum process connected to the vacuum vessel connected to the socket 1 ', air is sucked through the layer 2 from the pump 3 (e.g. a water jet pump), which serves to break the semiconductor wafer . One can refer to the layer 2 device. When the semiconductor wafer 4 is used, this is also attracted to the porous layer 2 in the device according to the invention, for example. The configuration achieved in this way according to FIG. 2 possible.
A vacuum vessel 31 is used by the pump or by means of a corresponding 40, which via an evacuation support 31 'reduces the area of the porous glass layer 2 that is not covered by the semiconductor wafer, e.g. a water jet' pump, is connected. In a similar way, wi * further are set so that the semiconductor, the vacuum vessel in the device according to plate 4 by the me- F i g. 1, the vacuum vessel in this case is not moved out of its position by mechanical forces 45 with a porous solid layer 32, e.g. B. a Gl & s * can be. frit, covered. There is a waved on the glass frit,
Bewegungen wird die Diamantspitze und gleichzeitig PatentarKiwVhp·
auch das Gesichtsfeld des auf die anzuritzende Halb- ratemansprucne.
lederoberfläche scharf eingestellten Mikroskops über 1. Vorrichtung zum Haltern scheibenförmiger die Oberfläche der Halbleiterscheibe unter Erzeu- Werkstücke aus Halbleitermaterial durch Angung und gleichzeitiger Kontrolle der gewünschten 65 saugen an eine ebene, mit öffnungen für den eingeritzten Linien geführt. Dabei bereitet es keine Durchtritt Von Luft versehene fest© Auflage, Schwierigkeiten, die Justierschrauben des Kreuz- dadurch gekennzeichnet, daß die Auf* tisches nicht nur zur Erzeugung gerader, sondern lage aus porösem Werkstoff besteht.The scratching is carried out by means of a diamond tip, preferably likewise porous intermediate layer 33, i> B. whereby it is advisable to place a soft cloth or a layer of foam rubber on the disc with appropriate pressure during the scratching. On this the H & lb-disc to be broken is to move the pressed diamond tip, because 50 plate washer 34 is placed, which in turn can be easily adjusted by ftindr in this case, the gas device of the cross table, which is made of elastic, soft material, is covered by the film 35, which is leakproof for monitoring is. If one uses the microscope used for the scoring on the wall of the vacuum vessel 31 with the film 35 in carrying out the scoring. For this purpose, the required dimensions are gas-tight, e.g. B. The vacuum vessel 1 is fastened to the cross-clamping device 36 via eiöfc, connected, operated at the operating table of the microscope and pressed against the vacuum vessel 34 in the manner described in the evacuation process the porous soft layer 33 presses the suctioned semiconductor wafer from below against the stationary, the porous layer 32 having a diamond tip held for breaking. A suitable fixed base of the adjusting device of the cross table provides a controlled δο position by breaking with a steel roller.
Movements becomes the diamond tip and at the same time PatentarKiwVhp
also the field of vision of the half-ratemansprucne to be scratched.
Leather surface sharply set microscope over 1. Device for holding disk-shaped the surface of the semiconductor wafer under production workpieces made of semiconductor material by anging and simultaneous control of the desired 65 suction on a flat, with openings for the incised lines. There is no passage of air provided firm © support, difficulties, the adjusting screws of the cross - characterized in that the table is made of porous material not only to produce straight, but layered material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1962S0080487 DE1237942B (en) | 1962-07-19 | 1962-07-19 | Device for holding disc-shaped workpieces made of semiconductor material by suction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1962S0080487 DE1237942B (en) | 1962-07-19 | 1962-07-19 | Device for holding disc-shaped workpieces made of semiconductor material by suction |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1237942B true DE1237942B (en) | 1967-03-30 |
Family
ID=7508908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1962S0080487 Pending DE1237942B (en) | 1962-07-19 | 1962-07-19 | Device for holding disc-shaped workpieces made of semiconductor material by suction |
Country Status (1)
Country | Link |
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DE (1) | DE1237942B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2315402A1 (en) * | 1972-03-31 | 1973-10-04 | Ibm | PROCESS FOR AUTOMATIC CUTTING OF SEMI-CONDUCTOR PLATES IN CHIPS AND FOR ORIENTED SOLDERING OF CHIPS ON MODULE SUBSTRATES |
DE2608642A1 (en) * | 1975-03-06 | 1976-09-16 | Ibm | DEVICE FOR TESTING INTEGRATED CIRCUITS |
DE3120477A1 (en) * | 1980-05-23 | 1982-03-11 | Disco Co., Ltd., Tokyo | DEVICE FOR CLAMPING AND FIXING SEMICONDUCTOR PLATES |
EP0147094A2 (en) * | 1983-12-19 | 1985-07-03 | Citizen Watch Co. Ltd. | Vacuum suction device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE526249C (en) * | 1927-08-12 | 1931-06-04 | Heinrich Eberhard | Pneumatic workpiece holder |
US2198765A (en) * | 1938-08-05 | 1940-04-30 | Merritt Engineering & Sales Co | Vacuum cup and vacuum cup system |
DE836401C (en) * | 1950-07-20 | 1952-04-10 | Wilhelm Dichmann Ii | Method and table for holding paper, cardboard, wood veneers, metal foils or the like. |
US2970730A (en) * | 1957-01-08 | 1961-02-07 | Motorola Inc | Dicing semiconductor wafers |
US3040489A (en) * | 1959-03-13 | 1962-06-26 | Motorola Inc | Semiconductor dicing |
-
1962
- 1962-07-19 DE DE1962S0080487 patent/DE1237942B/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE526249C (en) * | 1927-08-12 | 1931-06-04 | Heinrich Eberhard | Pneumatic workpiece holder |
US2198765A (en) * | 1938-08-05 | 1940-04-30 | Merritt Engineering & Sales Co | Vacuum cup and vacuum cup system |
DE836401C (en) * | 1950-07-20 | 1952-04-10 | Wilhelm Dichmann Ii | Method and table for holding paper, cardboard, wood veneers, metal foils or the like. |
US2970730A (en) * | 1957-01-08 | 1961-02-07 | Motorola Inc | Dicing semiconductor wafers |
US3040489A (en) * | 1959-03-13 | 1962-06-26 | Motorola Inc | Semiconductor dicing |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2315402A1 (en) * | 1972-03-31 | 1973-10-04 | Ibm | PROCESS FOR AUTOMATIC CUTTING OF SEMI-CONDUCTOR PLATES IN CHIPS AND FOR ORIENTED SOLDERING OF CHIPS ON MODULE SUBSTRATES |
DE2608642A1 (en) * | 1975-03-06 | 1976-09-16 | Ibm | DEVICE FOR TESTING INTEGRATED CIRCUITS |
DE3120477A1 (en) * | 1980-05-23 | 1982-03-11 | Disco Co., Ltd., Tokyo | DEVICE FOR CLAMPING AND FIXING SEMICONDUCTOR PLATES |
EP0147094A2 (en) * | 1983-12-19 | 1985-07-03 | Citizen Watch Co. Ltd. | Vacuum suction device |
EP0147094A3 (en) * | 1983-12-19 | 1986-09-17 | Citizen Watch Co. Ltd. | Vacuum suction device |
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