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DE1196301B - Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen - Google Patents

Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen

Info

Publication number
DE1196301B
DE1196301B DET27618A DET0027618A DE1196301B DE 1196301 B DE1196301 B DE 1196301B DE T27618 A DET27618 A DE T27618A DE T0027618 A DET0027618 A DE T0027618A DE 1196301 B DE1196301 B DE 1196301B
Authority
DE
Germany
Prior art keywords
circuit elements
microminiaturized
german
production
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DET27618A
Other languages
English (en)
Inventor
Jack St Clair Kilby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27408060&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE1196301(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1196301B publication Critical patent/DE1196301B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Thyristors (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Description

BUNDESREPUBLIK DEUTSCHLAND
DEUTSCHES
PATENTAMT
AUSLEGESCHRIFT
BIBLIOTHEK
3ES DEUTSCHEN
PATEKTAtIiIiS
Int. α.:
HOIl
Deutsche Kl.: 21g-11/02
Nummer:
Aktenzeichen:
Anmeldetag:
Auslegetag:
T 27618 VIII c/21 g
5. Februar 1960
8. Juli 1965
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen, bei welchen eine Anzahl aktiver und/oder passiver elektrischer Schaltungselemente in einem Halbleiterplättchen gebildet werden.
Zur Miniaturisierung von Schaltungsanordnungen ist bereits der theoretische Vorschlag bekannt, einen Siliziumblock so zu dotieren und zu formen, daß er vier normalen Transistoren und vier Widerständen äquivalent ist, wobei den Transistoren zwei Emitterzonen und zwei Kollektorzonen gemeinsam sind. Weitere Widerstände und Kondensatoren sind unter Einfügung von isolierenden Schichten in Form von Filmen unmittelbar so auf dem Siliziumblock gebildet, daß alle Schaltungselemente zusammen einen Multivibrator bilden. Zu diesem Zweck sind parallel zu der Ober- und Unterseite des Siliziumblocks zwei pn-Übergänge gebildet, die sich zu den Seitenflächen des Blocks erstrecken. Zur gegenseitigen Trennung der einzelnen Transistoren und Widerstände sind Durchbohrungen von den Seitenflächen her quer durch den Block sowie verschiedene Einschnitte gebildet, so daß schließlich die vier Ecken des Blocks je einen Transistor darstellen, deren Kollektor- und Emitterzonen zum Teil durch stehengebliebene Siliziumbrücken verbunden sind, welche die Rolle von Widerständen bilden. Zur Vervollständigung der Schaltung sind Kontakte an den verschiedenen Flächen des Blocks, einschließlich der Seitenflächen, sowie Verbindungsleiter zu den aufgebrachten filmförmigen Schaltungselementen angebracht. Die bei diesem geplanten Multivibrator zur Trennung der Schaltungselemente erforderliche mechanische Herstellung von Einschnitten und Durchbohrungen ist um so schwieriger, je kleiner die Abmessungen des Halbleiterblocks sind. Der Miniaturisierung sind dadurch Grenzen gesetzt. Ferner ist die Zahl der Schaltungselemente begrenzt, die auf diese Weise voneinander getrennt werden können, und die zu trennenden Schaltungselemente müssen auch in bestimmter Anordnung vorliegen, damit die Einschnitte und Durchbohrungen angebracht werden können, ohne daß die mechanische Festigkeit zu sehr beeinträchtigt wird. Schließlich eignen sich solche mechanischen Bearbeitungsvorgänge, die von verschiedenen Seiten aus an dem Halbleiterblock vorgenommen werden müssen, nur schlecht für eine automatisierte Massenfertigung.
Ziel der Erfindung ist die Schaffung eines Verfahrens, mit welchem die erforderliche Trennung der Schaltungselemente von mikrominiaturisierten, integrierten Halbleiterschaltungsanordnungen ohne Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen
Anmelder:
Texas Instruments Incorporated,
Dallas, Tex. (V. St. A.)
Vertreter:
Dipl.-Ing. E. Prinz, Dr. rer. nat. G. Hauser
und Dipl.-Ing. G. Leiser, Patentanwälte,
München-Pasing, Ernsbergerstr. 19
Als Erfinder benannt:
Jack St. Clair Kilby, Dallas, Tex. (V. St. A.)
Beanspruchte Priorität:
ao V. St. v. Amerika vom 6. Februar 1959 (791 602), vom 12. Februar 1959 (792 840)
as mechanische Bearbeitung unter Anwendung von Verfahrensschritten möglich ist, die mit den zur Herstellung der Schaltungselemente angewendeten Verfahrensschritten, wie Maskierung und Diffusion vereinbar sind.
Nach der Erfindung wird dies dadurch erreicht, daß zur Abgrenzung des für jedes der Schaltungselemente verwendeten Gebietes oder zur Schaffung der erforderlichen elektrischen Trennung zwischen den Schaltungselementen in das Innere eines eigenleitenden Halbleiterplättchens Störstoffe an entsprechenden Stellen eindiffundiert werden.
Bei dem erfindungsgemäßen Verfahren erfolgt die elektrische Trennung zwischen den Schaltungselementen im Innern des Halbleiterplättchens durch den hohen Widerstand des eigenleitenden Halbleitermaterials, der nur an den die Schaltungselemente bildenden Gebieten durch die eindiffundierten Störstoffe herabgesetzt wird. Es ist daher möglich, eine beliebige Zahl von gleichartigen oder verschiedenartigen Schaltungselementen in beliebiger Anordnung in einem einzigen Halbleiterplättchen zu bilden, ohne daß diese sich gegenseitig beeinflussen. Die Bildung dieser Schaltungselemente durch Diffusionsverfahren eignet sich besonders für eine Massenfertigung und erlaubt die Herstellung von integrierten Halbleiterschaltungsanordnungen von äußerst kleinen Abmessungen mit großer Präzision.
509 599/300
Das erfindungsgemäße Verfahren wird beispielsweise so durchgeführt, daß von einem Plättchen aus einkristallinem Halbleitermaterial mit Eigenleitfähigkeit ausgegangen wird. Ein Plättchen ist ein Körper mit zwei im wesentlichen parallelen Hauptflächen, deren Abmessungen groß gegen die Dicke des Plättchens sind. In diesem Plättchen werden Schaltungselemente an der einen Hauptfläche dadurch abgegrenzt, daß der Widerstand des eigenleitenden Halbleitermaterials durch Eindiffundieren von Störstoffen an den entsprechenden Stellen herabgesetzt wird. Auf diese Weise können beispielsweise Stromwege niedrigeren Widerstands gebildet werden, welche die Rolle von elektrischen Widerständen spielen und durch das sie umgebende eigenleitende Material von den anderen im gleichen HaIbleiterplättchen gebildeten Schaltungselementen praktisch isoliert sind.

Claims (1)

  1. Patentanspruch:
    Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen, bei welchem eine Anzahl aktiver und/oder passiver elektrischer Schaltungselemente in einem HaIbleiterplättchen gebildet werden, dadurch gekennzeichnet, daß zur Abgrenzung des für jedes der Schaltungselemente verwendeten Gebietes oder zur Schaffung der erforderlichen elektrischen Trennung zwischen den Schaltungselementen in das Innere eines eigenleitenden Halbleiterplättchens Störstoffe an entsprechenden Stellen eindiffundiert werden.
    In Betracht gezogene Druckschriften:
    Deutsche Auslegeschriften Nr. 1 011 081, 1040 700;
    deutsche Patentschriften Nr. 833 366, 949 422; deutsches Gebrauchsmuster Nr. 1 672 315;
    britische Patentschriften Nr. 736 289, 761926, 805 207; ■■-·■
    belgische Patentschrift Nr. 550 586;
    USA.-Patentschriften Nr. 2 493 199, 2 629 802, 2 660 624, 2 662 957, 2 663 806, 2 663 830, 2 667 607, 2 680 220, 2 709 232, 2 735 948, 2 748 041, 2 816 228, 2 817 048,
    2 713 644,
    2 824 977,
    2 836 776, 2 754 431, 2 847 583,
    2 856 544, 2 858 489, 2 878 147, 2 897 295, 2 910 634, 2 915 647, 2 916 408, 2 922 937, 2 935 668, 2 944 165, 2 967 952, 2 976 426,
    2 994 834, 2 995 686, 2 998 550, 3 005 937,
    3 022 472, 3 038 085, 3 070 466;
    Electronic & Radio Engineer, November S. 429;
    Aviation Week, April 8, 1957, S. 86 bis 94; Instruments & Automation, April 1957, S. 667 bis 668;
    a5 Electronics, 7. 8. 1959, S. 110 bis 111; »Proceedings of an International Symposium on
    Electronic Components« by Dummer, S.4, Fig. 19, Royal Radar Establishment Malvern, England, bis 26. September 1957, veröffentlicht im United Kingdom August 1958;
    Control Engineering, Februar 1958, S. 31/32, »Army develops printed Transistors«.
    509 599/300 6.65 © Bandesdruckerei Berlin
DET27618A 1959-02-06 1960-02-05 Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen Pending DE1196301B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US791602A US3138743A (en) 1959-02-06 1959-02-06 Miniaturized electronic circuits
US792840A US3138747A (en) 1959-02-06 1959-02-12 Integrated semiconductor circuit device
US352380A US3261081A (en) 1959-02-06 1964-03-16 Method of making miniaturized electronic circuits

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DE1196301B true DE1196301B (de) 1965-07-08

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DET27617A Pending DE1196300B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiter-schaltungsanordnung
DE1960T0027614 Expired DE1196297C2 (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DET27618A Pending DE1196301B (de) 1959-02-06 1960-02-05 Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen
DE19601196299D Expired DE1196299C2 (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung
DET27613A Pending DE1196296B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DET17835A Pending DE1196295B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung
DET27615A Pending DE1196298B (de) 1959-02-06 1960-02-05 Verfahren zur Herstellung einer mikrominiaturisierten, integrierten Halbleiterschaltungsanordnung
DE19641439754 Pending DE1439754B2 (de) 1959-02-06 1964-12-02 Kondensator und verfahren zu seiner herstellung

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DE1960T0027614 Expired DE1196297C2 (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung

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DET27613A Pending DE1196296B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DET17835A Pending DE1196295B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung
DET27615A Pending DE1196298B (de) 1959-02-06 1960-02-05 Verfahren zur Herstellung einer mikrominiaturisierten, integrierten Halbleiterschaltungsanordnung
DE19641439754 Pending DE1439754B2 (de) 1959-02-06 1964-12-02 Kondensator und verfahren zu seiner herstellung

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US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material

Also Published As

Publication number Publication date
DE1196297B (de) 1965-07-08
NL6608451A (de) 1970-07-23
DK104005C (da) 1966-03-21
MY6900301A (en) 1969-12-31
DE1196299B (de) 1965-07-08
MY6900292A (en) 1969-12-31
JPS6155256B1 (de) 1986-11-27
US3261081A (en) 1966-07-19
MY6900290A (en) 1969-12-31
DK104006C (da) 1966-03-21
DE1439754B2 (de) 1972-04-13
DE1196295B (de) 1965-07-08
DE1196298B (de) 1965-07-08
DE1196297C2 (de) 1974-01-17
CH415869A (fr) 1966-06-30
GB945746A (en) 1964-01-08
GB945743A (en) 1964-01-08
MY6900283A (en) 1969-12-31
NL6608447A (de) 1970-07-23
GB945745A (en) 1964-01-08
CH410201A (fr) 1966-03-31
US3138747A (en) 1964-06-23
DE1196300B (de) 1965-07-08
MY6900286A (en) 1969-12-31
GB945734A (en) 1964-01-08
GB945744A (en) 1964-01-08
CH415868A (fr) 1966-06-30
NL6608446A (de) 1970-07-23
NL6608452A (de) 1970-07-23
DK104185C (da) 1966-04-18
DK104470C (da) 1966-05-23
NL6608445A (de) 1970-07-23
GB945742A (de)
GB945737A (en) 1964-01-08
DE1196296B (de) 1965-07-08
GB945738A (en) 1964-01-08
CH387799A (fr) 1965-02-15
CH410194A (fr) 1966-03-31
DE1439754A1 (de) 1969-12-04
MY6900291A (en) 1969-12-31
CH415867A (fr) 1966-06-30
MY6900300A (en) 1969-12-31
CH416845A (fr) 1966-07-15
DK103790C (da) 1966-02-21
GB945740A (de)
MY6900287A (en) 1969-12-31
MY6900315A (en) 1969-12-31
MY6900293A (en) 1969-12-31
NL134915C (de) 1972-04-17
SE314440B (de) 1969-09-08
US3138743A (en) 1964-06-23
MY6900284A (en) 1969-12-31
GB945747A (de)
GB945748A (en) 1964-01-08
MY6900296A (en) 1969-12-31
DK104008C (da) 1966-03-21
MY6900302A (en) 1969-12-31
NL6608448A (de) 1970-07-23
NL6608449A (de) 1970-07-23
GB945739A (en) 1964-01-08
MY6900285A (en) 1969-12-31
AT247482B (de) 1966-06-10
GB945749A (en) 1964-01-08
GB945741A (en) 1964-01-08
CH380824A (fr) 1964-08-14
DE1196299C2 (de) 1974-03-07
DK104007C (da) 1966-03-21

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