[go: up one dir, main page]

AT247482B - Kondensator und Verfahren zu seiner Herstellung - Google Patents

Kondensator und Verfahren zu seiner Herstellung

Info

Publication number
AT247482B
AT247482B AT926861A AT926861A AT247482B AT 247482 B AT247482 B AT 247482B AT 926861 A AT926861 A AT 926861A AT 926861 A AT926861 A AT 926861A AT 247482 B AT247482 B AT 247482B
Authority
AT
Austria
Prior art keywords
capacitor
capacitors
silicon
dielectric layer
semiconductor
Prior art date
Application number
AT926861A
Other languages
English (en)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27408060&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AT247482(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of AT247482B publication Critical patent/AT247482B/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Thyristors (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Description


   <Desc/Clms Page number 1> 
 



  Kondensator und Verfahren zu seiner Herstellung 
Die Erfindung betrifft einen Kondensator mit einer Dielektrikum-Schichte auf einem seiner Beläge und mit einem leitenden Belag, welcher auf der Dielektrikum-Schichte aufliegt, sowie ein Verfahren zur Herstellung dieses Kondensators. 



   Ziel der Erfindung ist es, einen Kondensator zu schaffen, der wesentlich kleiner, kompakter und viel zuverlässiger ist als die Kondensatoren der bisherigen Art. Gemäss der Erfindung wird dies dadurch erreicht, dass der erstgenannte Belag aus einem Einkristall-Halbleitermaterial besteht, welches aus der Gruppe, die im wesentlichen von Silizium, Germanium und intermetallischen Legierungen gebildet ist, ausgewählt ist, und dass die Dielektrikum-Schichte aus einem Siliziumoxyd besteht. 



   Gemäss einem weiteren Merkmal der Erfindung kann der erstgenannte Belag ein Bereich eines Halb- 
 EMI1.1 
 render Teil einer kompletten elektronischen Schaltung, die sich auf einem einzelnen Halbleiterkörper befindet, wie dies in der Patentschrift Nr. 226 274 beschrieben ist. 



   Gegenstand der Erfindung ist auch ein Verfahren zur Herstellung eines derartigen Kondensators, wobei der erstgenannte Belag von Silizium gebildet   ist ;   dieses Verfahren ist dadurch gekennzeichnet, dass die Dielektrikum-Schichte durch Oberflächen-Oxydieren des Siliziumkörpers erzeugt wird. Auf diese Weise kann der Kondensator schneller und besser als die bisher üblichen Kondensatoren hergestellt werden. 



   Es ist an sich bereits bekanntgeworden, ein Dielektrikum aus Siliziumoxyd anzuwenden, jedoch ist die gleichzeitige Anwendung einer Schicht aus einem Oxyd des Siliziums als Dielektrikum und eines Halbleitermaterials als zweiter Belag eines Kondensators demgegenüber nicht nur neu, sondern es ergeben sich hiedurch auch nicht zu erwartende Vorteile verschiedenster Art, wie sie später noch dargelegt werden sollen. 



   Im folgenden wird die Erfindung an Hand der Zeichnungen genauer erläutert, welche bevorzugte Ausführungsformen der Erfindung darstellt. Hiebei zeigt Fig. 1 einen nicht unter das Schutzbegehren fallenden Halbleiter-Kondensator und Fig. 2 zeigt einen   Halbleiterkondensator   gemäss einer Verwirklichungsform der Erfindung. 



   Wie in Fig. 1 gezeigt wird, wird der Kondensator durch die Verwendung eines   pn-Überganges   erhalten. Ein Halbleiterplättchen 15 der p-Leitfähigkeitstype weist eine eindiffundierte Schicht 16 der   n-Leitfähigkeitstype   auf und besitzt an seinen gegenüberliegenden Seiten ohmische Kontakte 17. 



  Die Kapazität C eines diffundierten Überganges ist gegeben durch den Ausdruck 
 EMI1.2 
 

 <Desc/Clms Page number 2> 

 hierin bedeutet A die Flache des Überganges in   cm2, s   ist die Dielektrizitätskonstante, q ist die elektrische Ladung, a ist der Gradient der Dichte der Verunreinigungen und V ist die ange- legte Spannung. 



   Bei dem in Fig. 2 gezeigten Kondensator wird die Kapazität in einem Halbleiter-Einkristallkörper auf die im folgenden beschriebene Art erhalten. In Fig. 2 ist ein Körper 15a aus halbleitendem Mate- rial der n-oder der p-Leitfähigkeitstype gezeigt, welcher die eine Platte des Kondensators bildet. Auf den Halbleiterkörper 15a ist eine   Schichte   18 aufgedampft, welche das Dielektrikum für den Kon- densator bildet. 



   Es ist erforderlich, dass die Schichte 18 eine entsprechende Dielektrizitätskonstante aufweist und ohne jeden (chemischen) Einfluss auf den Halbleiterkörper 15a ist, wenn sie mit diesem in Berührung kommt. Siliziumoxyd wurde als brauchbares Material für eine solche Dielektrizitätsschichte 18 er- kannt und kann durch Aufdampfen oder durch thermischeOxydationsverfahren auf den Körper 15a auf- gebracht werden. Das Plättchen 19 bildet die andere Platte des Kondensators und ist durch Aufdampfen eines leitenden Materials auf die Schichte 18 gebildet. 



   Gold und Aluminium wurden als zur Herstellung des Plättchens 19 brauchbar befunden. Ein ohmscher Kontakt 17a ist am Körper des Halbleitermaterials 15a   vorgesehen, während die   Verbin- dung zum Plättchen 19 durch irgendeinen elektrischen Kontakt (nicht gezeigt) hergestellt werden kann. 



   Kondensatoren, die in der an Hand der Fig. 2 beschriebenen Weise hergestellt sind, zeigen viel stabilere Eigenschaften als Kondensatoren, die nur durch einen Übergang gebildet sind, wie etwa der Kondensator, der in Fig. 1 gezeigt ist und durch einen pn-Übergang gebildet ist. Weiters können Kon- densatoren gemäss Fig. 2 auch als einzelnes Schaltelement oder Einzelteil erzeugt werden. Als weiterer Vorteil solcher Kondensatoren ergibt sich, dass sie auch in einem bestimmten Gebiet eines Körpers von halbleitendem Material, angrenzend an andere Schaltelemente oder Einzelteile, gebildet werden können, so dass eine komplette elektrische Schaltung, solche Kondensatoren mit eingeschlossen, auf einem einzigen Körper von halbleitendem Material hergestellt werden kann. 



   Bei einem Kondensator des Aufbaues nach Fig.1 können sich Ladungsträger an den einander gegen- überliegenden Seiten des   pn- Überganges ansammeln   und hiedurch den Effekt der Kapazität hervorbringen. 



  Wie aus Fig. 1 hervorgeht, sind derartige Kondensatoren aber auch Dioden und müssen dementsprechend innerhalb der Schaltung richtig polarisiert sein. Nichtpolarisierte Kondensatoren können so hergestellt werden, dass zwei solcher Übergänge gegenpolig hintereinandergeschaltet werden ("Rücken an Rücken"). 



   Wenngleich polarisierte Kondensatoren eine ausgeprägte Spannungsabhängigkeit zeigen, so ist diese Abhängigkeit   in einem wenn auch geringerem Ausmass   bei geringen Spannungen auch in der nicht-polarisierten Konfiguration vorhanden. 



   Obwohl die Erfindung an Hand von bestimmten Ausführungsformen gezeigt und erläutert worden ist, ist es klar, dass Abänderungen möglich sind, ohne den Rahmen der Erfindung zu verlassen. Derartige Ver- änderungen und Modifikationen fallen   natürlich   in das Gebiet der Erfindung. 



    PATENTANSPRÜCHE :    
1. Kondensator mit einer Dielektrikum-Schichte auf einem seiner Beläge und mit einem leitenden Belag, welcher auf der Dielektrikum-Schichte aufliegt, dadurch gekennzeichnet, dass der erstgenannte Belag aus einem Einkristall-Halbleitermaterial besteht, welches aus der Gruppe, die im   wesentlichen von Silizium, Germanium u : id intermetallischen Legierungen gebildet ist, ausgewählt   ist, und dass die Dielektrikum-Schichte aus einem Siliziumoxyd besteht.

Claims (1)

  1. 2. Kondensator nach Anspruch 1, dadurch gekennzeichnet, dass der erstgenannte Belag ein Bereich eines Halbleiter-Einkristallkörpers ist, welcher zumindest noch ein weiteres Schaltelement in sich oder auf sich trägt.
    3. Verfahren zur Herstellung eines Kondensators nach einem oder beiden der vorhergehenden Ansprüche, wobei der erstgenannte Belag von Silizium gebildet ist, dadurch gekennzeichnet, dass die Dielektrikum-Schichte durch Oberflächen-Oxydieren des Siliziumkörpers gebildet wird.
AT926861A 1959-02-06 1960-02-06 Kondensator und Verfahren zu seiner Herstellung AT247482B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US791602A US3138743A (en) 1959-02-06 1959-02-06 Miniaturized electronic circuits
US792840A US3138747A (en) 1959-02-06 1959-02-12 Integrated semiconductor circuit device
US352380A US3261081A (en) 1959-02-06 1964-03-16 Method of making miniaturized electronic circuits

Publications (1)

Publication Number Publication Date
AT247482B true AT247482B (de) 1966-06-10

Family

ID=27408060

Family Applications (1)

Application Number Title Priority Date Filing Date
AT926861A AT247482B (de) 1959-02-06 1960-02-06 Kondensator und Verfahren zu seiner Herstellung

Country Status (10)

Country Link
US (3) US3138743A (de)
JP (1) JPS6155256B1 (de)
AT (1) AT247482B (de)
CH (8) CH415867A (de)
DE (8) DE1196300B (de)
DK (7) DK104006C (de)
GB (14) GB945744A (de)
MY (14) MY6900286A (de)
NL (7) NL6608449A (de)
SE (1) SE314440B (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208012C2 (de) * 1959-08-06 1966-10-20 Telefunken Patent Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen
US3202891A (en) * 1960-11-30 1965-08-24 Gen Telephone & Elect Voltage variable capacitor with strontium titanate dielectric
BE623677A (de) * 1961-10-20
NL298196A (de) * 1962-09-22
US3235945A (en) * 1962-10-09 1966-02-22 Philco Corp Connection of semiconductor elements to thin film circuits using foil ribbon
GB1047390A (de) * 1963-05-20 1900-01-01
US3300832A (en) * 1963-06-28 1967-01-31 Rca Corp Method of making composite insulatorsemiconductor wafer
BE650116A (de) * 1963-07-05 1900-01-01
US3290758A (en) * 1963-08-07 1966-12-13 Hybrid solid state device
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3323071A (en) * 1964-07-09 1967-05-30 Nat Semiconductor Corp Semiconductor circuit arrangement utilizing integrated chopper element as zener-diode-coupled transistor
US3274670A (en) * 1965-03-18 1966-09-27 Bell Telephone Labor Inc Semiconductor contact
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
US3486085A (en) * 1966-03-30 1969-12-23 Intelligent Instr Inc Multilayer integrated circuit structure
US3562560A (en) * 1967-08-23 1971-02-09 Hitachi Ltd Transistor-transistor logic
US3521134A (en) * 1968-11-14 1970-07-21 Hewlett Packard Co Semiconductor connection apparatus
US4416049A (en) * 1970-05-30 1983-11-22 Texas Instruments Incorporated Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor
CA1007308A (en) * 1972-12-29 1977-03-22 Jack A. Dorler Cross-coupled capacitor for ac performance tuning
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material
US4603372A (en) * 1984-11-05 1986-07-29 Direction De La Meteorologie Du Ministere Des Transports Method of fabricating a temperature or humidity sensor of the thin film type, and sensors obtained thereby
US5144158A (en) * 1984-11-19 1992-09-01 Fujitsu Limited ECL latch circuit having a noise resistance circuit in only one feedback path
FR2596922B1 (fr) * 1986-04-04 1988-05-20 Thomson Csf Resistance integree sur un substrat semi-conducteur
RU2212079C1 (ru) * 1999-08-30 2003-09-10 Инститьют Оф Байофизикс Чайниз Академи Оф Сайенсиз Пластинчатый диод
KR100368930B1 (ko) * 2001-03-29 2003-01-24 한국과학기술원 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법
US7415421B2 (en) * 2003-02-12 2008-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for implementing an engineering change across fab facilities
US7297589B2 (en) 2005-04-08 2007-11-20 The Board Of Trustees Of The University Of Illinois Transistor device and method
US7741971B2 (en) * 2007-04-22 2010-06-22 James Neil Rodgers Split chip
JP2009231891A (ja) * 2008-03-19 2009-10-08 Nec Electronics Corp 半導体装置
US8786355B2 (en) * 2011-11-10 2014-07-22 Qualcomm Incorporated Low-power voltage reference circuit
US9900943B2 (en) 2016-05-23 2018-02-20 On-Bright Electronics (Shanghai) Co., Ltd. Two-terminal integrated circuits with time-varying voltage-current characteristics including phased-locked power supplies
CN105979626B (zh) 2016-05-23 2018-08-24 昂宝电子（上海）有限公司 包括锁相电源的具有时变电压电流特性的双端子集成电路
US10872950B2 (en) 2016-10-04 2020-12-22 Nanohenry Inc. Method for growing very thick thermal local silicon oxide structures and silicon oxide embedded spiral inductors
US11325093B2 (en) 2020-01-24 2022-05-10 BiologIC Technologies Limited Modular reactor systems and devices, methods of manufacturing the same and methods of performing reactions

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2493199A (en) * 1947-08-15 1950-01-03 Globe Union Inc Electric circuit component
US2660624A (en) * 1949-02-24 1953-11-24 Rca Corp High input impedance semiconductor amplifier
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker
US2662957A (en) * 1949-10-29 1953-12-15 Eisler Paul Electrical resistor or semiconductor
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2935668A (en) * 1951-01-05 1960-05-03 Sprague Electric Co Electrical capacitors
US2629802A (en) * 1951-12-07 1953-02-24 Rca Corp Photocell amplifier construction
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2667607A (en) * 1952-04-26 1954-01-26 Bell Telephone Labor Inc Semiconductor circuit element
BE519804A (de) * 1952-05-09
DE1672315U (de) * 1952-07-29 1954-02-25 Licentia Gmbh Gleichrichter aus einem halbleitermaterial, das mit hoher stromdichte belastet werden kann.
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
BE525202A (de) * 1952-12-19
BE525823A (de) * 1953-01-21
BE526156A (de) * 1953-02-02
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
BE530809A (de) * 1953-08-03
US2976426A (en) * 1953-08-03 1961-03-21 Rca Corp Self-powered semiconductive device
DE1011081B (de) * 1953-08-18 1957-06-27 Siemens Ag Zu einem Bauelement zusammengefasste Widerstandskondensator-Kombination
BE553173A (de) * 1954-05-10
US2713644A (en) * 1954-06-29 1955-07-19 Rca Corp Self-powered semiconductor devices
US2998550A (en) * 1954-06-30 1961-08-29 Rca Corp Apparatus for powering a plurality of semi-conducting units from a single radioactive battery
NL92927C (de) * 1954-07-27
US2847583A (en) * 1954-12-13 1958-08-12 Rca Corp Semiconductor devices and stabilization thereof
DE1066666B (de) * 1954-12-16 1959-10-08
US2824977A (en) * 1954-12-24 1958-02-25 Rca Corp Semiconductor devices and systems
US2836776A (en) * 1955-05-07 1958-05-27 Nippon Electric Co Capacitor
US2877358A (en) * 1955-06-20 1959-03-10 Bell Telephone Labor Inc Semiconductive pulse translator
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2889469A (en) * 1955-10-05 1959-06-02 Rca Corp Semi-conductor electrical pulse counting means
NL121810C (de) * 1955-11-04
NL210216A (de) * 1955-12-02
US2922937A (en) * 1956-02-08 1960-01-26 Gen Electric Capacitor and dielectric material therefor
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
NL215949A (de) * 1956-04-03
BE556305A (de) * 1956-04-18
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
US2814853A (en) * 1956-06-14 1957-12-03 Power Equipment Company Manufacturing transistors
US2897295A (en) * 1956-06-28 1959-07-28 Honeywell Regulator Co Cascaded tetrode transistor amplifier
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
DE1040700B (de) * 1956-11-16 1958-10-09 Siemens Ag Verfahren zur Herstellung eines Diffusionstransistors
US2866140A (en) * 1957-01-11 1958-12-23 Texas Instruments Inc Grown junction transistors
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
BE568830A (de) * 1957-06-25
GB800221A (en) * 1957-09-10 1958-08-20 Nat Res Dev Improvements in or relating to semi-conductor devices
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3038085A (en) * 1958-03-25 1962-06-05 Rca Corp Shift-register utilizing unitary multielectrode semiconductor device
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
US2995686A (en) * 1959-03-02 1961-08-08 Sylvania Electric Prod Microelectronic circuit module
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material

Also Published As

Publication number Publication date
DE1196297B (de) 1965-07-08
NL6608451A (de) 1970-07-23
DK104005C (da) 1966-03-21
DE1196301B (de) 1965-07-08
MY6900301A (en) 1969-12-31
DE1196299B (de) 1965-07-08
MY6900292A (en) 1969-12-31
JPS6155256B1 (de) 1986-11-27
US3261081A (en) 1966-07-19
MY6900290A (en) 1969-12-31
DK104006C (da) 1966-03-21
DE1439754B2 (de) 1972-04-13
DE1196295B (de) 1965-07-08
DE1196298B (de) 1965-07-08
DE1196297C2 (de) 1974-01-17
CH415869A (fr) 1966-06-30
GB945746A (en) 1964-01-08
GB945743A (en) 1964-01-08
MY6900283A (en) 1969-12-31
NL6608447A (de) 1970-07-23
GB945745A (en) 1964-01-08
CH410201A (fr) 1966-03-31
US3138747A (en) 1964-06-23
DE1196300B (de) 1965-07-08
MY6900286A (en) 1969-12-31
GB945734A (en) 1964-01-08
GB945744A (en) 1964-01-08
CH415868A (fr) 1966-06-30
NL6608446A (de) 1970-07-23
NL6608452A (de) 1970-07-23
DK104185C (da) 1966-04-18
DK104470C (da) 1966-05-23
NL6608445A (de) 1970-07-23
GB945742A (de)
GB945737A (en) 1964-01-08
DE1196296B (de) 1965-07-08
GB945738A (en) 1964-01-08
CH387799A (fr) 1965-02-15
CH410194A (fr) 1966-03-31
DE1439754A1 (de) 1969-12-04
MY6900291A (en) 1969-12-31
CH415867A (fr) 1966-06-30
MY6900300A (en) 1969-12-31
CH416845A (fr) 1966-07-15
DK103790C (da) 1966-02-21
GB945740A (de)
MY6900287A (en) 1969-12-31
MY6900315A (en) 1969-12-31
MY6900293A (en) 1969-12-31
NL134915C (de) 1972-04-17
SE314440B (de) 1969-09-08
US3138743A (en) 1964-06-23
MY6900284A (en) 1969-12-31
GB945747A (de)
GB945748A (en) 1964-01-08
MY6900296A (en) 1969-12-31
DK104008C (da) 1966-03-21
MY6900302A (en) 1969-12-31
NL6608448A (de) 1970-07-23
NL6608449A (de) 1970-07-23
GB945739A (en) 1964-01-08
MY6900285A (en) 1969-12-31
GB945749A (en) 1964-01-08
GB945741A (en) 1964-01-08
CH380824A (fr) 1964-08-14
DE1196299C2 (de) 1974-03-07
DK104007C (da) 1966-03-21

Similar Documents

Publication Publication Date Title
AT247482B (de) Kondensator und Verfahren zu seiner Herstellung
DE2312414C2 (de) Verfahren zur Herstellung von integrierten MOSFET-Schaltkreisen
DE1260029B (de) Verfahren zum Herstellen von Halbleiterbauelementen auf einem Halbleitereinkristallgrundplaettchen
DE1764712A1 (de) Widerstandskoerper fuer eine integrierte Schaltung
DE69033647T2 (de) Methode zur Herstellung einer Halbleiterstruktur für integrierte Hochleistungsschaltungen
DE1439737A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1194500B (de) Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen
DE2261541A1 (de) Verfahren zur herstellung von integrierten schaltungen
DE69324952T2 (de) Wechselspannungsschalter
DE1614250B2 (de) Halbleiteranordnung mit gruppen von sich kreuzenden verbindungen
DE2507038B2 (de) Inverser Planartransistor und Verfahren zu seiner Herstellung
DE1489193B2 (de) Verfahren zum herstellen einer halbleiteranordnung
DE1769271C3 (de) Verfahren zum Herstellen einer Festkörperschaltung
DE2549670A1 (de) Duennfilmtransformator
DE1639176A1 (de) Integrierte Festkoerperschaltung mit lediglich zwei Elektrodenzuleitungen
AT225236B (de) Verfahren zur Herstellung von abgeschlossenen Schaltungseinheiten sehr geringer Abmessungen
DE2101278A1 (de) Integrierte Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE2952318C2 (de) Integrierte Schaltungsanordnung und Verfahren zu ihrer Herstellung
DE2038283C3 (de) Halbleiterbauelement
DE2603746A1 (de) Integrierte schaltungsanordnung
DE2050320A1 (de) Halbleiteranordnung
DE2844420A1 (de) Integriertes hall-bauelement
AT226274B (de) Halbleiteranordnung
DE2259188C3 (de) Integrierbare Schottky-Diode und ihre Verwendung in einer integrierten Halbleiterschaltung, insbesondere einem Festwertspeicherwerk
DE1639355A1 (de) Verfahren zur Herstellung einer integrierten Halbleitervorrichtung und nach diesem Verfahren hergestellte integrierte Halbleitervorrichtung