DE10143363A1 - Microswitch for use in a bore - Google Patents

Abstract

A device in a well includes a device to be activated by electrical energy and a microswitch that includes conductors and an element between the first and second conductors selected from a group that includes: a dielectric element that can be regulated to act as a Generate a conductive path in response to receipt of electrical energy; and an element that can be moved in response to the application of electrical energy. The microswitch can be designed with microelectromechanical system technology (MEMS technology) or with microelectronic technology.

Description

BACKGROUND

The invention relates to microswitches for use in various devices such as in drilling machines in a hole.

Many different types of operations can be performed when drilling including drilling, logging, closing and production operations be carried out. To perform the desired operations, meh Various devices are used. Examples of such devices include perforation guns for performing perforation operations, Flow control devices for controlling fluid flow (injection or generation gung), sealing pieces for isolating different areas of the bore and other devices.

The activation mechanisms for activating these devices can mechanical, hydraulic and electrical activation mechanisms sen. To electrically activate a device in a hole, the Device connected to a power source in the bore. typically, this is done with switches either on the surface or in a module in the Drilling. Initially the switch is open to the power source from the device isolate in the hole. If activation is desired, the switch closed to supply electrical current to the device in the well.

One type of switch in drilling applications is from a gas discharge tube, being either a triggered type switch or a Surge switch is. A triggered type switch uses one external stimulus to close or activate the switch. On Surge switch is activated every time the voltage level is on one side of the switch exceeds a threshold.

Some switches use a gas tube with an electrode on each The End. To make the switch conductive, either a third internal  Grid or a trigger voltage applied to an anode or the switch in the Result of an overvoltage condition made conductive. Because the typical gas tube discharge switch is arranged in a tubular geometry, it is usually associated with a relatively high inductance. Moreover leaves the tubular shape of a gas pipe no convenient reduction in Total size of a switch too. It can also be difficult to gas Integrate pipe switches with other components.

Another type of switch includes an explosion shock switch. The Shock switch is using a flexible flat cable with a upper conductive layer, a middle insulating layer and a lower conductive Layer constructed. A small explosive charge can be placed on the top layer Explosion are brought, which leads to the fact that the insulating layer is a conductive Forms ionization path between the two conductive layers. A variation of which is a "thumb pin" switch, in which a pointed metal pin for Piercing the insulating layer is used to cover the top conductive layer to electrically connect the lower conductive layer.

The explosion shock switch creates a switch with lower Inductance, but the switch is ignited by an explosive cushion got to. The thumb stick switch is similar to the explosive switch, possibly but not so reliable. There is therefore still a need for switches with improved reliability and improved trigger properties.

SUMMARY

According to one embodiment, includes an apparatus for use in a device in a bore generally a component in the bore and a switch containing conductors and a microelectromechanical device, which is designed to electrically connect the conductors when activated becomes.

Further features and embodiments result from the following Be spelling, from the drawing and from the claims.

BRIEF DESCRIPTION OF THE DRAWING

Fig. 1 shows an embodiment of a tool string for use in a bore.

FIG. 2 is a circuit diagram of an explosive film trigger trigger circuit (EFI trigger circuit) according to an embodiment applicable in the tool strand from FIG. 1.

Fig. 3 shows an embodiment of a switch with a micro-electro mechanical pin.

FIGS. 4A-4B show another embodiment of a switch with a connected through a frangible element electrode.

FIG. 5 shows yet another embodiment of a switch with parallel plates and with a dielectric layer that can break down in response to an applied electrical current.

Fig. 6 shows a further embodiment of a switch with a bistable element.

FIGS. 7A-7D show a still further embodiment of a scarf ters with a chamber containing a dielectric gas.

Fig. 8 shows another embodiment of a switch with a movable electrode.

DETAILED DESCRIPTION

In the following description, numerous details are presented, to gain an understanding of the present invention. For the specialist in the field, however, it is understood that the present invention without these details can be realized and that at the described from management forms numerous changes or modifications are possible. whether reference is immediately made to switches used to activate explosive foils triggers (EFIs) can be used, other embodiments for example, include switches that are used to activate other components be det.

As used here, the terms "up" and "down";"upper" and "lower";"up" and "down";"above" and "below"; and other similar terms that indicate relative locations above or below a given point or element are used in this specification only to more clearly describe some embodiments of the invention. When applied to equipment and methods for use in holes that are deviating or horizontal, or if this equipment has a different or horizontal orientation, these terms can refer to a left-right, right-left or to one relate to another relationship. As shown in Fig. 1, a device 10 is lowered in a bore, which may include, for example, a perforation gun 15 , through a pipe 7 located in a bore 8 , which is aligned with a casing 9 . Between the piping 7 and the casing 9 , a sealing piece 6 is inserted to isolate the casing casing annulus. The device 10 in the bore runs on a support 12 , which can be rope work, a silt line, piping or another support. Certain types of beams 12 (such as rope work) may include one or more electrical conductors 13 through which the current and signals may be transmitted to the device 10 in the well. The perforation gun 15 shown in FIG. 1 contains a plurality of hollow spaces 20 . In one embodiment, these shaped charges 20 can be detonated with the trigger devices 22 , which are activated by a command issued from the surface of the bore, which may take the form of electrical signals sent via one or more electrical conductors 13 in the carrier 12 . Alternatively, the command may take the form of a pressure pulse or hydraulic commands. The trigger devices 22 may be electrically activated by signals transmitted over one or more electrical lines 24 .

Other embodiments of the device 10 in the bore may include sealing pieces, valves, plugs, bits, or other devices. Thus, in these other embodiments, the command issued from the bore surface can activate control modules for adjusting seals, opening and closing valves, or actuating or releasing other devices. To activate a device in the device 10 in the bore, switches can be provided which connect an electrical signal or the electrical current to the device. For example, the trigger device 22 may include a switch and an explosive foil trigger circuit (EFI) for triggering an explosive.

According to some embodiments, the switches can be microelectrome contain mechanical elements based on the microelectromechanical system techno logic (MEMS technology). MEMS elements include mecha nical elements caused by an input energy (electrical energy or an whose type of energy) could be moved. MEMS switches can with microfabri cation techniques are trained, the micromachining on a Semiconductor substrate (z. B. a silicon substrate) may include. In the mic  material processing process can have various etching and structuring steps can be used to form the desired micromechanical parts. Some advantages of MEMS elements are that they have a small space ingest, need relatively low power, relatively robust are and can be relatively inexpensive.

The switches according to other embodiments can be micro-electro Techniques are produced that are similar to those used to manufacture integrated circuit devices can be used. As used here with the MEMS or with another microelectronic technology gie trained switches are generally referred to as "microswitches". The Elements in such microswitches can be called "micro-elements", i.e. H. generally as trained with MEMS or with microelectronics technology elements. In general, those with MEMS technology realized switches or devices as "microelectromechanical switches" be designated.

In one embodiment, the microswitches can be used with others Components such as with EFI circuits for triggering explosives be integrated. The integrated components are contained in smaller housings that allow more efficient use of space in a well. Like it Components used here are referred to as "integrated" if they arranged on a relatively small size encapsulation common support structure formed or otherwise in more narrow Neighborhood are assembled to each other. Thus, for example, a Microswitches on the same support structure as the EFI circuit represents to due to the lower effective series resistance (ESR) and because of the lower effective series inductance (ESL) a more efficient one To create switches. The microswitch can also be on a common sub strat be formed with other components.

As shown in FIG. 2, according to one embodiment, a capacitor discharge unit (CDU) includes a capacitor 202 that can be charged up to a trigger voltage level. Capacitor 202 provides a local energy source that provides the activation energy. The capacitor 202 is connected to a microswitch 204 , which can be activated by a trigger voltage V _trigger or by a trigger current I _trigger . When the switch 204 is closed, the activation energy of a EFI circuit 206 is coupled to activate the EFI 206th

An EFI circuit typically includes a metal foil connected to an electrical power source such as capacitor 202 . A thinned neck section with a very small width is formed in the film, an insulating layer being arranged over part of the film with the neck section. When a high current is applied through the neck portion of the film, the neck portion explodes or evaporates. As a result, a small plane is sheared from the insulating layer, which passes through a drum and strikes an explosive to cause an explosion.

Various embodiments of microswitches are described below. Such microswitches are applicable in the CDU of FIG. 2 or can alternatively be used to connect the electrical energy to other compo nents in the bore.

As shown in FIG. 3, according to one embodiment, a MEMS switch 300 can be activated by a MEMS pin 302 . In this embodiment, MEMS pin 302 replaces the thumb pin actuator used in some conventional thumb pin switches. Switch 300 includes upper and lower conductive layers 304 and 308 with an insulating layer 306 between them. Conductors 304 and 308 may each be formed from a metal or other suitable conductive material. Insulating layer 306 may include a polyimide layer, for example. MEMS pin 302 may be disposed over top conductive layer 304 . When an actuator 303 is actuated with a predetermined amplitude, such as by an applied trigger voltage V _trigger , it releases the MEMS pin 302 so that it moves through layers 304 and 306 and contacts lower conductive layer 308 , This electrically couples the upper and lower conductive layers 304 and 306 and activates the switch 300 . Thus, the electrically conductive layer 304 can be driven to a drive voltage V _Drive , while the electrically conductive layer 308 is connected to the component to be activated (e.g. to the EFI circuit 206 from FIG. 2).

In one embodiment, layers 304 and 306 may already have a preformed bore 307 through which MEMS pin 302 may pass. In another embodiment, MEMS pin 302 may have a pointed end that pierces layers 304 and 306 and reaches layer 308 .

In one arrangement, the actuator 303 includes movable support members 305 which support the pin 302 in an enlarged flange portion 312 . When the support members 305 are withdrawn from the flange portion 312 of the flange, they allow the pin 302 to fall into the bore 307 . The support elements 305 can be moved radially by a MEMS drive mechanism 303 . When electrical power is applied, MEMS drive mechanism 303 radially retracts support members 305 from pin 302 to allow it to fall into bore 307 and bring conductors 304 and 308 into electrical contact. In an alternative arrangement, instead of withdrawing support from pin 302, a MEMS drive mechanism 303 can be used to drive pin 302 into bore 307 .

The layer structure contained in the microswitch 300 can be formed on a substrate 310 , which can be a semiconductor, an insulator or another substrate. In one example, substrate 310 may be a silicon substrate. First, the conductor layer 308 is deposited on the substrate 310 , followed by the insulator layer 306 and the next conductor layer 304 . Bore 307 may be patterned through layers 304 and 306 by anisotropic etching. The MEMS structure with the pin 302 and the actuating element 303 can then be formed on the conductor layer 304 above the bore 307 .

As shown in FIGS. 4A-4B, a microswitch 500 according to another embodiment includes a first substrate 502 and a second substrate 504 . In fact, first substrate 502 and the layers formed over it are shown upside down in Figures 4A-4B. When the microswitch 500 is formed , the two substrates 502 and 504 are independently structured, one being turned over so that it faces the other.

An insulator layer 506 (e.g., a nitride or S _x N _y layer) is formed over a surface of the substrate 502 . A conductive line 510 (e.g., a metal layer with aluminum, nickel, gold, copper, tungsten, and titanium) is formed on the insulator layer 506 . A plurality of tethers 516 may then be formed on the substrate 502 , each of which is made of a semiconductor material such as doped silicon with a selected resistance to support a conductive plate 514 made of a metal such as aluminum, nickel, gold , Copper, tungsten and titanium can be produced. The tethers 516 are connected to the conductive plate 514 at the contact points between the tethers 516 and the plate 514 . When the halves 516 are subjected to a relatively large current, they dissolve or otherwise tear, which allows the conductive plate 514 to fall over the space 515 and come into contact with a conductive layer 512 formed over the substrate 504 , Thus, tethers 516 are effectively fragile elements that can break in response to the application of an electrical voltage or current.

As shown in FIG. 4B, the bonded plate 514 has a bent portion 517 that allows it to be connected to a connection pad 519 formed over the substrate 502 . The connection pad 519 can, for example, be in contact with a connection finger which supplies the connected conductive plate 514 with a drive voltage V _Drive . The holding cables 516 are in contact with the conductive line 510 , which in turn can be connected to a further connection pad 521 , which receives a trigger current I _trigger .

In operation, the conductive plate 514 is driven to a drive voltage Vorive. If the microswitch 500 is to be closed (or activated), a trigger current ITrigger is applied via the conductive line 510 , which at least tears or dissolves a part of the holding cables 516 . This allows the conductive plate 514 (which is at the drive voltage V _Drive ) to drop where it contacts the conductive layer 512 , thereby driving the voltage V _o to the _drive voltage V _Drive . Conductive layer 512 (and voltage V _o ) may be connected to a device to be activated, such as EFI circuit 206 of FIG. 2.

As shown in FIG. 5, yet another embodiment of a microswitch 600 includes two parallel plates 602 and 604 with a dielectric layer 610 between the parallel plates. The dielectric properties of the dielectric layer 610 may be regulated by electrical energy in the form of a trigger voltage or a trigger current to create a conductive path between the two conductive plates 602 and 604 . A conductive line 606 may be formed over the conductive plate 604 , with an insulator layer 607 between the line 606 and the conductive plate 604 . The dielectric layer 610 that separates the conductive plates 602 and 604 may be a solid dielectric, a dielectric liquid, or a dielectric gas. When a trigger current is applied to line 606 , this causes dielectric layer 610 to breakdown and a conductive path is created between conductive plates 602 and 604 .

In operation, a drive voltage VDrive is applied to the conductive plate 602 , the conductive plate 604 being coupled to a device to be activated. When a trigger current I _{trigger is applied} to line 606 , dielectric layer 610 is stripped, passing voltage V _Drive over the conductive path from conductive plate 602 to plate 604 , to change voltage V _o to drive voltage V _Drive to increase.

As shown in FIG. 6, a microswitch 700 according to another embodiment includes a bistable microelectromechanical switch 700 . The switch 700 contains a contact plate 706 , which is held in a neutral position (ie in an inactive position) when a drive voltage V _Drive is applied. The contact plate 706 is located substantially in the middle plane between the plates 702 and 704 . Plates 702 and 704 are each driven on VDrive to hold contact plate 706 in its neutral position. When activation of the microswitch 700 is desired, a trigger voltage V _{trigger is} added to one of the plates 702 and 704 to increase the voltage to V _Drive + V _Trigger . This creates an electrostatic force that causes an imbalance in the switch that moves plate 706 so that it contacts plate 704 . The contact plate 706 is attached at its foot end to a support column 710 . In one embodiment, the contact plate 706 and the support column are integrally formed with a metal to create a boom. The boom is designed so that it bends when applied by an electrostatic force. When the cantilever plate 706 contacts the plate 704 , the voltage V _Drive + V _{Trigger is} transmitted to the cantilever plate 706 .

With reference to FIGS. 7A-7D shows a further embodiment of a micro-switch 800 is shown. FIG. 7A is an exploded side view of the micro switch 800, which includes an upper substrate 802 and a lower substrate 804th Structures can be formed on each of the substrates 802 and 804 . FIG. 7B shows a top view of the lower substrate 804 , while FIG. 7C shows a bottom view of the upper substrate 802 . A conductive plate 806 and an upper dielectric layer 810 are deposited on the upper substrate 802 . A lower conductive plate 808 is formed over the lower substrate 804 , while a lower dielectric layer 812 is formed over the lower conductive plate 808 . In addition, a trigger electrode 814 is formed over the dielectric layer 812 .

As shown in FIG. 7C, the dielectric layer 810 has a cut-away portion that forms a window that exposes the upper conductive plate 806 . Similarly, as shown in FIG. 7B, the dielectric layer 812 has a cut-away portion that forms a window that exposes the lower conductive plate 808 .

As shown in FIG. 7A, the upper substrate 802 is folded into an upside-down position. When the top and bottom substrates 802 and 804 and the attached substrates come into contact, the structure of Fig. 7D is achieved. The fabrication of the structure can be carried out in a chamber filled with a noble gas (e.g. argon) so that the space 816 formed as a result of bringing the two substrates 802 and 804 together is also filled with the noble gas. Alternatively, the space 816 can be filled with another dielectric element, such as a liquid or solid dielectric. The dielectric material is selected in such a way that, when a trigger signal is applied, it breaks down with a predetermined voltage or with a predetermined current.

In operation, a trigger voltage is applied to the trigger circuit board 814, which breaks down the insulator in the space 816 to create a conductive path between the upper conductive plate 806 and the lower conductive plate 808 and thereby close the microswitch 800 .

As shown in FIG. 8, a MEMS switch 400 according to a further embodiment may include the electrical contacts 404 , 406 , 408 and 410 separated by the spaces 420 and 422 . Contacts 404 and 406 are electrically coupled to leads 416 and 418 , respectively, which terminate at electrodes 412 and 414 , respectively. The electrodes 412 and 414 can be in electrical contact with corresponding components, such as an energy source and a device to be activated by the energy source. The contacts 404 and 406 are inclined so that when the contacts 408 and 410 are moved by an actuating element 402 upwards, they adjoin the contacts 408 and 410, respectively. The actuating element 402 can be movable, for example, by applying a trigger voltage. When contacts 404 , 406 , 408, and 410 contact each other, an electrically conductive path is established between electrodes 412 and 414 . Movement of actuator 402 can be accomplished with MEMS drives (not shown).

The contacts 404 , 406 , 408 and 410 can be formed from metal or from another electrically conductive material. The switch 400 may be formed in a semiconductor substrate such as silicon.

The advantages of the various switches disclosed can be the following include. In general, the switches can be in relatively small units be realized what because of the reduced resistance and the reduced Inductance improves the efficiency of the switches. Furthermore, some of the scarf ter be integrated with other devices such as EFI circuits, so that they form an overall package of reduced size. Because explosives or the mechanical actuation as used in some conventional switches The reliability and safety of the switches will be avoided elevated.

Although the invention relates to a limited number of designs Forms have been disclosed are numerous for those skilled in the art modifications and changes are obvious. The appended claims all such modifications and changes that are in the Erfin idea and fall within the scope of the invention include. example wise, other circuit configurations can be made using micro elements are used.

Claims (30)

1. An apparatus for use in a device in a bore, comprising:
a component in the bore; and
a switch with conductors and a microelectromechanical device designed to, when activated, electrically connect the conductors to provide electrical energy to the component in the bore. 2. Device according to claim 1, wherein the microelectromechanical Device includes an actuator that is responsive to an applied electrical signal can be moved. 3. Apparatus according to claim 2, wherein the microelectromechanical Switch also a multi-layer assembly with the conductors and an insulator contains, wherein the actuator is such that it is through the Isolator moves. 4. The device according to claim 1, wherein the microelectromechanical Device includes a contact assembly having at least a first contact and contains a second contact, which is an electrical signal to each other too can be moved. 5. The device of claim 1, wherein the microelectromechanical Device contains a fragile element, which is designed so that it as Reaction to the application of electrical energy breaks. 6. The device according to claim 5, wherein one of the conductors on the fragile element is fastened, the one ladder being such that it moves when the fragile element breaks, and with the other Head came into contact. 7. The apparatus of claim 6, wherein the fragile element Includes a tether formed over a support structure, the device further includes an electrical line formed over the support structure and is in electrical contact with the tether.   8. The device of claim 7, further comprising at least one other Tether. 9. The device according to claim 1, wherein the microelectromechanical Device contains one of the conductors, which is set up as a boom, the Switch also contains two further equilibrium conductors, which initially in the essence Chen are at the same voltage so that they are in contact with the cantilever conductor Are balance. 10. The device according to claim 9, in which one of the two Equilibrium conductor a trigger voltage is applied, which is an electrostatic Generates force that causes the boom ladder to match one weight manager moves. 11. The device of claim 10, wherein the component in the Boh tion is electrically coupled to the boom conductor. 12. The apparatus of claim 1, wherein the microelectromechanical Device has a chamber which is arranged between the conductors dielectric element while the device further includes a trigger line contains, through which electrical energy can be applied to the dielectric Ele to penetrate and create a conductive path between the components train. 13. The apparatus of claim 12, wherein the dielectric element contains dielectric gas. 14. The apparatus of claim 13, wherein the dielectric gas is a noble contains gas. 15. The apparatus of claim 1, wherein the component in the bore contains an explosive foil trigger circuit. 16. An apparatus for use in a well, comprising:
a component;
a microswitch designed to couple electrical energy to activate the component, the microswitch including conductors and a movable member for forming an electrical path between the conductors. 17. The apparatus of claim 16, wherein the microswitch by Microelectromechanical technology is formed. 18. The apparatus of claim 16, wherein the component is a  Contains explosive film release. 19. Switch for use in a device in a bore that includes:
a first conductor at a first voltage;
a second conductor for coupling to a device in the device in the bore; and
a microelement between the first and second conductors selected from the group consisting of a dielectric element that can be regulated to produce a conductive path in response to receipt of electrical energy; and contains an element that can be moved in response to the application of electrical energy. 20. The switch of claim 19, wherein the dielectric element is a contains dielectric gas. 21. The switch of claim 19, wherein the dielectric gas is a noble contains gas. 22. The switch of claim 19, wherein the dielectric element is a contains dielectric solid or a dielectric liquid. 23. The switch of claim 19, wherein the dielectric gas is a noble contains gas. 24. The switch of claim 19, wherein the micro-element is a microelectr contains tromechanical element or a microelectronic element. 25. A method of making a switch for use in a device in a well, comprising:
Forming a first conductor and a second conductor; and
Forming a microelectromechanical element between the first and second conductors, the microelectromechanical element having an inactive state in which it electrically insulates the first and second conductors, and an active state in which it is electrically the first and second conductors coupled. 26. The method of claim 25, wherein forming the microelectromechanical element, the formation of a movable element includes. 27. The method of claim 26, wherein forming the microelectromechanical element comprises forming a cantilever which  contains an electrically conductive material that is designed so that it by a electrostatic force can be moved. 28. The method of claim 26, wherein forming the microelectromechanical element forming a fragile ele elements and attaching the fragile element to a conductive plate comprises wherein the fragile element shatters in response to electrical energy can. 29. The method of claim 25, wherein forming the microelectromechanical element, the provision of a dielectric element, that can be regulated by electrical energy to create a conductive path form, includes. 30. A method of activating a component in a well, comprising:
Providing a microswitch coupled to the component in the bore, the microswitch having at least one of a movable element and a dielectric element that can be regulated to create a conductive path; and
Activate the microswitch to couple electrical energy with the component in the bore.