CN102064041B - Normally-off state field emission type radio frequency micromechanical switch - Google Patents
Normally-off state field emission type radio frequency micromechanical switch Download PDFInfo
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- CN102064041B CN102064041B CN 201010591238 CN201010591238A CN102064041B CN 102064041 B CN102064041 B CN 102064041B CN 201010591238 CN201010591238 CN 201010591238 CN 201010591238 A CN201010591238 A CN 201010591238A CN 102064041 B CN102064041 B CN 102064041B
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- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000007373 indentation Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
本发明公开了一种新型常关态场发射型射频微机械开关，低损耗衬底，绝缘介质薄膜、共面波导的信号线和地线，信号线有两根，设在低损耗衬底中部，纵向位于同一条直线上，地线也有两根，分别位于信号线的左右两侧，地线及信号线与绝缘衬底之间均有绝缘介质薄膜，其特征在于两根信号线相邻的端部各设有一排金属微尖，两排金属微尖之间有间隔；低损耗衬底与两排金属微尖相对应的位置内凹形成一个空腔，使两排金属微尖处于悬空状态。本发明中的共面波导的信号线结构从物理上进行隔断类似机械开关，因此它的隔离度高；而其无可动结构的通断方式类似半导体开关，因此它的可靠性高且响应速度快；且通过采用尖对尖结构，可以获得较低的开关阈值电压。
The invention discloses a novel normally-off state field emission type radio frequency micromechanical switch, a low-loss substrate, an insulating dielectric film, a signal wire and a ground wire of a coplanar waveguide, two signal wires are arranged in the middle of the low-loss substrate , located on the same straight line in the longitudinal direction, there are also two ground wires, which are located on the left and right sides of the signal line, and there is an insulating dielectric film between the ground wire and the signal line and the insulating substrate, which is characterized in that the two signal lines are adjacent Each end is provided with a row of metal micro-tips, and there is a gap between the two rows of metal micro-tips; the position corresponding to the low-loss substrate and the two rows of metal micro-tips is concave to form a cavity, so that the two rows of metal micro-tips are in a suspended state . The signal line structure of the coplanar waveguide in the present invention is physically isolated similar to a mechanical switch, so its isolation is high; and the on-off mode of its non-movable structure is similar to a semiconductor switch, so its reliability is high and the response speed is high. Fast; and by adopting a tip-to-tip structure, a lower switching threshold voltage can be obtained.
Description
Technical field
The present invention relates to a kind of novel normal OFF state field emission type rf micromechanical switch.
Background technology
There are the following problems for existing radio-frequency (RF) switch:
(1) some adopt the mechanical movement of structure to reach the purpose of control radiofrequency signal break-make, and these switches cut off radiofrequency signal physically, so isolation is higher.These switches can be divided into again contact and condenser type two large classes, the reliability of touch switch is determined by the contact damage of structure and the fatigue properties of material, the reliability of capacitance-type switch is then determined by the charge injection effect of dielectric layer and the fatigue properties of material, so the reliability of these two kinds of switches is all undesirable.And owing to adopted the mode of mechanical movement, so that the response time of these switches is longer.
(2) some then adopt semiconductor PIN structure to control the break-make of radiofrequency signal, and integrity problem and long defective of response time that these switches have avoided mechanical movement to bring have high reliability and fast-response speed.The defective of this method mainly is: thorough not to the isolation of radiofrequency signal when adopting semiconductor PIN structure, so isolation is not high.
Summary of the invention
The problem that exists for overcoming above-mentioned prior art the invention provides a kind of high-isolation, high reliability, fast-response speed and the low normal OFF state field emission type rf micromechanical switch of carrying out voltage.
The present invention includes low loss substrate, the holding wire of dielectric film, co-planar waveguide and ground wire, holding wire has two, be located at the low loss substrate middle part, vertically be located on the same line, ground wire also has two, lay respectively at the left and right sides of holding wire, the dielectric film is all arranged between ground wire and holding wire and the dielectric substrate, and two adjacent ends of holding wire respectively are provided with the little point of row's metal, between the little point of two row's metals the interval are arranged; The low loss substrate position indent corresponding with the little point of two row's metals forms a cavity, makes the little point of two row's metals be vacant state.
The equal indentation of above-mentioned two row's little points of metal, the position one-to-one relationship of employing tip to tip is to reach the effect that reduces threshold voltage.
The present invention utilizes the little point of metal that the principle of field emission can occur under certain field intensity, make between the little point of two row's metals and produce electronic beam current, make the switch that is in OFF state originally come the conducting radiofrequency signal by electronic beam current, namely reached the effect of control radiofrequency signal break-make.
The present invention combines the advantage of mechanical switch and semiconductor switch, namely adopts the signal line structure of the co-planar waveguide that physically cuts off, and without the break-make mode of movable structure, the effect of high reliability and fast-response speed is arranged again when having reached existing high-isolation.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the A-A cutaway view of Fig. 1.
Embodiment
Join and Fig. 1 and Fig. 2, the present invention is by low loss substrate 1, the holding wire 5 of dielectric film 2, metal co-planar waveguide and ground wire 3, and holding wire 5 has two, is located at the middle part of low loss substrate 1, vertically is located on the same line.Two ground wires 3 lay respectively at the left and right sides of holding wire, between ground wire 3 and holding wire 5 and the dielectric substrate 1 dielectric film 2 are arranged all.Two adjacent ends of holding wire respectively are provided with the little point of row's metal, between two row's metals little sharp 4 interval are arranged; The low loss substrate 1 position indent corresponding with the little point of two row's metals forms a cavity 6, makes the zigzag end of two blocks of metals little sharp 4 be vacant state.Two arrange metals little sharp 4 equal indentations, and are the one-to-one relationship of tip to tip.
Manufacture method of the present invention is as follows:
At first at low loss substrate 1 growth one deck dielectric film 2, carry out for the first time photoetching and etching dielectric film and form the required window of corrosion cavity 6; Carry out the photoetching second time, then splash-proofing sputtering metal and peel off ground wire 3 and holding wire 5 and the metal little sharp 4 that forms co-planar waveguide; Again low loss substrate is carried out anisotropic etch, obtain cavity 6, make simultaneously metal little sharp 4 unsettled.
Operation principle of the present invention is:
Apply the electric field of some strength to the metal surface after, electric field can accelerate the metal surface electronics.When the energy that obtains by electric field acceleration when the metal surface electronics exceeded the work function of this metal, the electronics of metal surface will be escaped out from metal, and moves along direction of an electric field, formation field emitted electron line.Field emission makes the metal of originally keeping apart by the electronic beam current conducting, much smaller impedance when forming than isolation, and this little impedance can be carried out conducting with the radiofrequency signal of originally keeping apart.
The course of work of the present invention is as follows:
Radiofrequency signal is connected to the port of co-planar waveguide, adds dc offset voltage at the two ends of co-planar waveguide holding wire simultaneously.When dc offset voltage was zero, switch was in isolated state, not conducting of radiofrequency signal; After adding, dc offset voltage surpassed the threshold voltage of field emission, switch was in conducting state, but the conducting radiofrequency signal.
Using method of the present invention is:
Radiofrequency signal is connected to the port of co-planar waveguide, adds dc offset voltage at the two ends of co-planar waveguide holding wire simultaneously.Come the break-make of radiofrequency signal on the control switch with the added dc offset voltage in co-planar waveguide holding wire two ends.
Claims (2)
1. normal OFF state field emission type rf micromechanical switch, comprise low loss substrate (1), dielectric film (2), the holding wire of co-planar waveguide (5) and ground wire (3), holding wire has two, be located at the low loss substrate middle part, vertically be located on the same line, ground wire also has two, lay respectively at the left and right sides of holding wire, between ground wire (3) and holding wire (5) and the dielectric substrate dielectric film (2) is arranged all, it is characterized in that the adjacent end of two holding wires (5) respectively is provided with row's little point of metal (4), has the interval between two row's little points of metal (4); Low loss substrate (1) the position indent corresponding with two row's little points of metal (4) forms a cavity (6), makes two row's little points of metal (4) be in vacant state.
2. normal OFF state field emission type rf micromechanical switch as claimed in claim 1 is characterized in that all indentations of two row's little points of metal (4), and is the one-to-one relationship of tip to tip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010591238 CN102064041B (en) | 2010-12-16 | 2010-12-16 | Normally-off state field emission type radio frequency micromechanical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010591238 CN102064041B (en) | 2010-12-16 | 2010-12-16 | Normally-off state field emission type radio frequency micromechanical switch |
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| Publication Number | Publication Date |
|---|---|
| CN102064041A CN102064041A (en) | 2011-05-18 |
| CN102064041B true CN102064041B (en) | 2013-04-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010591238 Expired - Fee Related CN102064041B (en) | 2010-12-16 | 2010-12-16 | Normally-off state field emission type radio frequency micromechanical switch |
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| CN113848001B (en) * | 2021-09-14 | 2023-12-15 | 东南大学 | An RF resonant pressure sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201886965U (en) * | 2010-12-16 | 2011-06-29 | 东南大学 | Normally-closed field-emission RF MEMS switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7336474B2 (en) * | 1999-09-23 | 2008-02-26 | Schlumberger Technology Corporation | Microelectromechanical devices |
| GB2367574B (en) * | 2000-09-05 | 2003-02-19 | Schlumberger Holdings | Switches for downhole use |
| US6850133B2 (en) * | 2002-08-14 | 2005-02-01 | Intel Corporation | Electrode configuration in a MEMS switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201886965U (en) * | 2010-12-16 | 2011-06-29 | 东南大学 | Normally-closed field-emission RF MEMS switch |
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| CN102064041A (en) | 2011-05-18 |
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