CN222653962U - Power modules and power devices - Google Patents

Abstract

The present disclosure provides a power module and a power device, which belongs to the field of heat dissipation technology. The power module includes a first copper clad laminate, a second copper clad laminate, m power chips and a strip clip; the m power chips and the clip are both located between the first copper clad laminate and the second copper clad laminate, and m is an integer greater than or equal to 1; each power chip is electrically connected to the first copper clad laminate or the second copper clad laminate through the clip. With the present disclosure, the m power chips are located between the first copper clad laminate and the second copper clad laminate, and double-sided heat dissipation is adopted for the power chips, which can improve the heat dissipation capacity of the power module. In addition, a clip is arranged between the first copper clad laminate and the second copper clad laminate, and the area of the clip is relatively large, which can quickly transfer the heat of the power chip to the copper clad laminate, further improving the heat dissipation capacity of the power module.

Description

Power module and power device

Technical Field

The disclosure relates to the technical field of heat dissipation, and in particular relates to a power module and power equipment.

Background

Power modules, such as insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) modules, silicon carbide SiC modules, and power modules, require higher and higher heat dissipation capacities as the power increases, and current power modules have heat dissipation capacities that are bottlenecks that restrict further increases in power.

Disclosure of utility model

The utility model provides a power module and power equipment, this power module include two copper-clad plates, and a plurality of power chips are located between two copper-clad plates, and this kind adopts two-sided radiating scheme to the power chip, can promote power module's heat dispersion. In addition, clips (strips) are arranged between the power chips and the copper-clad plate instead of spacers, the clips are large in area, heat of the power chips can be quickly transferred to the copper-clad plate, and the heat dissipation capacity of the power module is further improved.

In a first aspect, the present disclosure provides a power module, including a first copper-clad plate, a second copper-clad plate, m power chips, and a stripe clip;

The m power chips and the clip are positioned between the first copper-clad plate and the second copper-clad plate, and m is an integer greater than or equal to 1;

and each power chip is electrically connected with the first copper-clad plate or the second copper-clad plate through the clip.

In the scheme shown in the disclosure, the power module comprises a first copper-clad plate and a second copper-clad plate, a plurality of power chips are positioned between the two copper-clad plates, the two copper-clad plates are used for radiating the power chips, and the scheme of double-sided radiation is adopted, so that the heat radiation of the power chips can be accelerated, and the heat radiation capacity of the power module is improved. And between first copper-clad plate and the second copper-clad plate, still arranged the clip, realize the electrical interconnection between power chip and first copper-clad plate or the second copper-clad plate by the clip, the area ratio of clip is great for the clip can be fast with the heat of power chip, transmits to the copper-clad plate, further accelerates power chip heat dissipation, thereby further promotes power module's heat dispersion.

In addition, the clip is arranged between the power chips and the copper-clad plate, and in the power module package, the clip is only required to be adhered to the surfaces of all the power chips, so that the package process can be simplified and the package efficiency can be improved compared with the case that the space is adhered to the surfaces of all the power chips respectively.

In one possible embodiment, the copper layer of the first copper-clad plate has electrically interconnected lines;

The bottom surfaces of the m power chips are welded on the surface of the first copper-clad plate, wherein the bottom surfaces of the power chips are the bottom surfaces of the substrates of the power chips;

The clips are located between the top surfaces of the m power chips and the second copper-clad plate and connected with the first copper-clad plate, wherein the top surfaces of the power chips are surfaces opposite to the substrate of the power chips.

In the scheme shown in the disclosure, the bottom surface of each power chip is welded with the first copper-clad plate, so that the electrode of the bottom surface of each power chip is directly and electrically connected with the first copper-clad plate. And the top surfaces of the power chips are connected with the first copper-clad plate through clips, so that the electrodes on the top surfaces of the power chips are indirectly and electrically connected with the first copper-clad plate through clips. Thus, each power chip is electrically connected with an external circuit through the first copper-clad plate. Thus, the first copper-clad plate is used for realizing electric interconnection on one hand and heat dissipation on the other hand, and the second copper-clad plate is used for realizing heat dissipation.

In one possible implementation manner, the copper layer of the first copper-clad plate and the copper layer of the second copper-clad plate are provided with electrically interconnected circuits, and m is an integer greater than or equal to 2;

The bottom surface of a first power chip in the m power chips is welded on the surface of the first copper-clad plate, wherein the bottom surface of the first power chip is the bottom surface of the substrate of the first power chip;

the bottom surface of a second power chip in the m power chips is welded on the surface of the second copper-clad plate, wherein the bottom surface of the second power chip is the bottom surface of the substrate of the second power chip;

The first part of the clip is positioned between the top surface of the first power chip and the second copper-clad plate and is connected with the first copper-clad plate, and the top surface of the first power chip is the surface of the substrate facing away from the first power chip;

The second part of the clip is positioned between the top surface of the second power chip and the first copper-clad plate and is connected with the second copper-clad plate, and the top surface of the second power chip is the surface of the substrate facing away from the second power chip;

The first and second parts of the clip are connected.

The number of the first power chips is at least one, and the number of the second power chips is at least one.

In the scheme shown in the disclosure, the bottom surface of each first power chip is welded with the first copper-clad plate, so that the electrode of the bottom surface of each first power chip is directly and electrically connected with the first copper-clad plate. And the top surfaces of the first power chips are connected with the first copper-clad plate through clips, so that the electrodes on the top surfaces of the first power chips are indirectly and electrically connected with the first copper-clad plate through clips. Thus, each first power chip is electrically connected with an external circuit through the first copper-clad plate. Thus, the first copper-clad plate is used for realizing electric interconnection on one hand and heat dissipation on the other hand.

In the scheme shown in the disclosure, the bottom surface of each second power chip is welded with the second copper-clad plate, so that the electrode of the bottom surface of each second power chip is directly and electrically connected with the second copper-clad plate. And the top surfaces of the second power chips are connected with the second copper-clad plate through clips, so that the electrodes on the top surfaces of the second power chips are indirectly and electrically connected with the second copper-clad plate through clips. Thus, each second power chip is electrically connected with an external circuit through the second copper-clad plate. Thus, the second copper-clad plate is used for realizing electric interconnection on one hand and heat dissipation on the other hand.

In one possible embodiment, the clip has m connecting tabs, which are connected one to the top surface of the power chip.

In a possible implementation manner, m is an integer greater than or equal to 2, and two power chips are electrically connected through the clip.

In the solution shown in the present disclosure, the number of power chips is plural, and if there is an electrical interconnection relationship between two power chips, the electrical interconnection may be implemented by clip.

In one possible embodiment, the clip is made of copper.

In the scheme shown in the disclosure, the clip made of copper material has better electric conductivity and thermal conductivity.

In one possible implementation manner, the first copper-clad plate and the second copper-clad plate are both copper-clad ceramic plates.

In the scheme shown in the disclosure, the first copper-clad plate and the second copper-clad plate are copper-clad ceramic plates, structurally comprise a ceramic plate, a copper layer positioned on the upper surface of the ceramic plate and a copper layer positioned on the lower surface of the ceramic plate, wherein the copper layer can also be etched with patterns to serve as a circuit of electric interconnection.

In one possible embodiment, the first copper-clad plate is a direct copper-clad DBC ceramic plate or an active metal brazing AMB ceramic plate, and the second copper-clad plate is a direct copper-clad DBC ceramic plate or an active metal brazing AMB ceramic plate.

In the scheme disclosed by the disclosure, the DBC ceramic plate is coated with copper by adopting a DBC process, namely a direct sintering process, and the process is also called a direct bonding copper process, so that the copper layer of the DBC ceramic plate is thicker, and the DBC ceramic plate has good heat resistance and is mainly applied to packaging of high-power and large-temperature-change power modules.

In the scheme disclosed by the disclosure, the AMB ceramic plate is coated with copper by adopting an AMB process, and similar to a DBC process, the copper layer of the AMB ceramic plate is thicker, the heat resistance is better, and the AMB ceramic plate is mainly applied to packaging of high-power and large-temperature-change power modules. But the AMB ceramic plate manufactured by the AMB process has stronger metal binding force, better thermal cycle and higher electrical performance.

In one possible embodiment, the power chip and the clip are fixedly connected by solder or sintered silver or sintered copper;

The power chip is fixedly connected with the copper-clad plate through solder or sintered silver or sintered copper, and the copper-clad plate is the first copper-clad plate or the second copper-clad plate;

The clip is fixedly connected with the copper-clad plate through solder or sintered silver or sintered copper, and the copper-clad plate is the first copper-clad plate or the second copper-clad plate.

In one possible implementation manner, the power module further includes a plastic molding compound, and the first copper-clad plate, the second copper-clad plate, the m power chips and the strip clip are all encapsulated in the plastic molding compound.

In the scheme disclosed by the disclosure, the power chip is coated in the plastic packaging material, so that the air tightness of the power chip is ensured to be good.

In one possible embodiment, the power module further comprises a heat dissipation structure;

The heat dissipation structure is arranged on the surface of the first copper-clad plate and/or the second copper-clad plate, which is opposite to the m power chips.

In the scheme shown in the disclosure, the heat dissipation structure can outwards emit the heat of the power chip, so that the heat dissipation capacity of the power module is further improved.

In one possible implementation, the power module further includes a thermally conductive interface material TIM located on a surface of the heat dissipation structure facing the power chip.

In the solution shown in the present disclosure, the heat dissipation structure is directly mounted on the copper-clad plate, and then the TIM is filled between the heat dissipation structure and the copper-clad plate to absorb the gap between the heat dissipation structure and the copper-clad plate. For another example, the heat dissipating structure is mounted on the copper clad laminate through the base plate, and then the TIM is filled between the heat dissipating structure and the base plate to absorb the air gap between the heat dissipating structure and the base plate to reduce the thermal resistance.

In one possible embodiment, the heat dissipating structure is a radiator or a liquid cooling plate.

In a second aspect, a power device is provided, where the power device includes a motherboard and the power module of the first aspect, and the power module is located on the motherboard and is used to implement power conversion.

Drawings

Fig. 1 is a schematic view of a structure of a power module in which a power chip and a first copper-clad plate are electrically connected according to an exemplary embodiment of the present disclosure;

Fig. 2 is a schematic diagram of a structure of a power module in which a power chip and a second copper-clad plate are electrically connected according to an exemplary embodiment of the present disclosure;

Fig. 3 is a schematic view of a structure of a power module in which a part of a power chip is electrically connected to a first copper-clad plate and another part of the power chip is electrically connected to a second copper-clad plate according to an exemplary embodiment of the present disclosure;

FIG. 4 is a schematic diagram of a clip of a power module provided by an exemplary embodiment of the present disclosure;

FIG. 5 is a schematic illustration of the fixed relationship inside the power module shown in FIG. 1, implemented by solder or sintered silver or sintered copper;

Fig. 6 is a schematic structural diagram of the power module shown in fig. 1 encapsulated by a molding compound;

fig. 7 is a schematic structural diagram of the power module shown in fig. 1, and further including a heat dissipation structure.

Description of the drawings

1. The heat-dissipating device comprises a first copper-clad plate, a first ceramic plate, a second copper-clad plate, a second ceramic plate, a power chip, a first power chip, a second power chip, a connecting sheet, a first part, a second part, a plastic package material, a base plate, a heat-dissipating structure and a TIM.

Detailed Description

For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.

The present embodiment relates to a Power Module, and in particular, to a Power Module with relatively large Power, such as an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) Module, a silicon carbide SiC Module, a Power Module (Power Module), and the like.

The power modules have larger and larger working power along with the increase of the performance, and the number of the included power chips is larger and larger along with the increase of the integration degree, so that the heat generation of the power modules is aggravated, and the heat dissipation performance is one of the bottlenecks for limiting the development of the power modules.

In order to improve the heat dissipation capability of the power module, in general, in the package, a bare chip (die) of the power module is arranged on a copper-clad plate, the copper-clad plate comprises a ceramic plate and copper layers laid on the upper surface and the lower surface of the ceramic plate, and the copper layers on the surface of the ceramic plate can also etch circuit patterns, so that the power chip is arranged on the copper-clad plate, and the copper-clad plate not only plays a role of electrical interconnection, but also plays a role of dissipating heat for the power chip.

Although the copper-clad plate is used for radiating the power chip, the radiating capacity of the power module is still not strong, and in order to further improve the radiating capacity of the power module, the embodiment provides the power module, and the radiating capacity of the power module can be further improved by increasing the radiating area.

The power module according to the present embodiment will be described below.

Before describing the power module, the location nouns referred to in this embodiment are explained first.

The above and below relationships in the embodiments of the present disclosure, unless otherwise specified, are all based on the above and below relationships shown in the drawings. The top surface of the power chip, unless specified otherwise, refers to the surface of the power chip facing away from its substrate, also referred to as the front surface of the power chip. The bottom surface of the power chip, unless specified otherwise, refers to the bottom surface of the substrate of the power chip, also referred to as the back surface of the power chip.

Referring to fig. 1, a power module is shown in fig. 1, and the power module includes a first copper-clad plate 1, a second copper-clad plate 2, and m power chips 3.

Referring to fig. 1, the first copper-clad plate 1 structurally includes a ceramic plate, and a copper layer on an upper surface of the ceramic plate and a copper layer on a lower surface of the ceramic plate, so the first copper-clad plate 1 may also be a copper-clad ceramic plate.

Referring to fig. 1, for convenience of description, the ceramic plate of the first copper-clad plate 1 is referred to as a first ceramic plate 11, the copper layer located on the upper surface of the first ceramic plate 11 is referred to as an upper copper layer a, and the copper layer located on the lower surface of the first ceramic plate 11 is referred to as a lower copper layer b.

Similarly, the second copper-clad plate 2 structurally comprises a ceramic plate, and a copper layer positioned on the upper surface of the ceramic plate and a copper layer positioned on the lower surface of the ceramic plate, so that the second copper-clad plate 2 can also be a copper-clad ceramic plate.

Referring to fig. 1, for convenience of description, the ceramic plate of the second copper-clad plate 2 is referred to as a second ceramic plate 21, the copper layer on the upper surface of the second ceramic plate 21 is also referred to as an upper copper layer a, and the copper layer on the lower surface of the second ceramic plate 21 is also referred to as a lower copper layer b.

In one example, the first copper-clad plate 1 may specifically be a direct copper-clad (Direct Bond Copper, DBC) ceramic plate or an active metal brazing (ACTIVE METAL Brazing, AMB) ceramic plate. Likewise, the second copper-clad plate 2 may be a DBC ceramic plate or an AMB ceramic plate.

The DBC ceramic plate is coated with copper by adopting a DBC process, has the characteristics of thicker copper layer and good heat resistance, and is mainly applied to packaging of high-power and large-temperature-change power modules.

The AMB ceramic plate is coated with copper by adopting an AMB process and also has the characteristics of thicker copper layer and good heat resistance, but compared with the DBC ceramic plate, the AMB ceramic plate also has the characteristics of stronger metal binding force, better heat cycle and higher electrical property, and is mainly applied to packaging of high-power and high-temperature-change power modules.

In one example, the power chip 3 of the power module is an unpackaged bare chip, also referred to as bare die. The number of the power chips 3 is at least one, so m is an integer greater than or equal to 1, and for convenience of description, m=2 is used in this embodiment, and the power module includes two power chips 3 for illustration, and the two power chips 3 are respectively denoted as a first power chip 31 and a second power chip 32 for illustration.

With continued reference to fig. 1, the m power chips 3 are located between the first copper-clad plate 1 and the second copper-clad plate 2, so that heat of each power chip 3 can be transferred in an upper direction and a lower direction, heat transferred to the first copper-clad plate 1 is dissipated outwards through the first copper-clad plate 1, heat transferred to the second copper-clad plate 2 is dissipated outwards through the second copper-clad plate 2. The double-sided heat dissipation of the power chip 3 can accelerate the heat dissipation of the power chip 3 and improve the heat dissipation capacity of the power module.

The electrical interconnection of the power chip 3 with the first copper-clad plate 1 or the second copper-clad plate 2 is described below.

The power chip 3 is electrically interconnected with the copper-clad plate, that is, the electrode of the power chip 2 is electrically connected with the copper-clad plate, and the electrode of the power chip 3 is also called a pad (pad).

In one example, since the power chip 3 is packaged in a closed environment, before the power chip 3 is packaged, the electrodes of the power chip 3 need to be connected to the wires of the copper-clad plate, so that the power chip 3 is externally connected through the copper-clad plate, and thus, an external circuit (such as a driving circuit or a control circuit) can input signals to the power chip 3 through electrical connection with the copper-clad plate.

The top surface and the bottom surface of the power chip 3 are both distributed with electrodes, for example, the top surface of the power chip 3 is distributed with a source (source) and a gate (gate), and the bottom surface of the power chip 3 is distributed with a drain (drain).

In this embodiment, the top surface of the power chip 3, which may also be referred to as the front surface of the power chip 3, refers to the surface facing away from the substrate of the power chip 3. The bottom surface of the power chip 3, which may also be referred to as the back surface of the power chip 3, refers to the bottom surface of the substrate of the power chip 3, which is also the outer surface of the substrate of the power chip 3 facing away from other layers.

In one example, the copper layer of the first copper-clad plate 1 has an electrically interconnected circuit, and the electrode of the power chip 3 may be connected to the circuit of the first copper-clad plate 1, so that the power chip 3 is externally connected through the first copper-clad plate 1.

For example, the electrode on the top surface of the power chip 3 is electrically connected with the first copper-clad plate 1, and the electrode on the bottom surface of the power chip 3 is electrically connected with the first copper-clad plate 1, so that the power chip 3 can be externally connected through the first copper-clad plate 1.

Referring to fig. 1, the power chip 3 is located on the inner surface of the first copper-clad plate 1 (i.e., the upper surface of the upper copper layer a of the first copper-clad plate 1 in fig. 1), and the bottom surface of the power chip 3 is welded to the inner surface of the first copper-clad plate 1. Thus, the electrode on the bottom surface of the power chip 3 is electrically connected with the first copper-clad plate 1 through welding. The top surface of the power chip 3 and the first copper-clad plate 1 can be connected through a clip (strip) 4. Furthermore, the electrodes on the top surface and the bottom surface of the power chip 3 are electrically connected with the first copper-clad plate 1, and the power chip 3 is externally connected through the first copper-clad plate 1.

With continued reference to fig. 1, in order to connect the electrode on the top surface of the power chip 3 with the electrode on the inner surface of the first copper-clad plate 1, correspondingly, the clip4 is located between the power chip 3 and the second copper-clad plate 2, extends between the power chip 3 and the second copper-clad plate 2, and is bent to the first copper-clad plate 1 to be connected with the electrode of the first copper-clad plate 1.

In fig. 1, the electrodes of the power chip 3 are not shown, but only one (but not limited to one) electrode is shown on the inner surface of the first copper-clad plate 1, and the electrode on the inner surface of the first copper-clad plate 1 is also a local area of the upper copper layer a.

Referring to fig. 1, clip4 is bent, and one part is adjacent to first copper-clad plate 1, and is connected to first copper-clad plate 1, and the other part is adjacent to second copper-clad plate 2, and is sandwiched between power chip 3 and second copper-clad plate 2.

In another example, the copper layer of the second copper-clad plate 2 has an electrically interconnected circuit, and the electrode of the power chip 3 may be connected to the circuit of the second copper-clad plate 2, so that the power chip 3 is externally connected through the second copper-clad plate 2.

For example, the electrode on the top surface of the power chip 3 is electrically connected with the second copper-clad plate 2, and the electrode on the bottom surface of the power chip 3 is electrically connected with the second copper-clad plate 2, so that the power chip 3 can be externally connected through the second copper-clad plate 2.

As shown in fig. 2, the power chip 3 is located on the inner surface of the second copper-clad plate 2 (i.e., the lower surface of the lower copper layer b of the second copper-clad plate 2 in fig. 2), and the bottom surface of the power chip 3 is welded with the inner surface of the second copper-clad plate 2. Thus, the electrode on the bottom surface of the power chip 3 is electrically connected with the second copper-clad plate 2 through welding. The top surface of the power chip 3 and the second copper-clad plate 2 can be connected through a clip (strip) 4. Furthermore, the electrodes on the top surface and the bottom surface of the power chip 3 are electrically connected with the second copper-clad plate 2, and the power chip 3 is externally connected through the second copper-clad plate 2.

With continued reference to fig. 2, in order to connect the electrode on the top surface of the power chip 3 with the electrode on the inner surface of the second copper-clad plate 2, correspondingly, the clip4 is located between the power chip 3 and the first copper-clad plate 1, extends between the power chip 3 and the first copper-clad plate 1, and is bent to the second copper-clad plate 2 to be connected with the second copper-clad plate 2.

In fig. 2, the electrodes of the power chip 3 are not shown, but only one (but not limited to one) electrode is shown on the inner surface of the second copper-clad plate 2, and the electrode on the inner surface of the second copper-clad plate 2 is also a local area of the lower copper layer b.

Referring to fig. 2, clip4 is bent, and one part is adjacent to second copper-clad plate 2, and is connected to second copper-clad plate 2, and the other part is adjacent to first copper-clad plate 1, and is sandwiched between power chip 3 and first copper-clad plate 1.

In fig. 1, all electrodes of the power chip 3 are electrically connected to the outside through a first copper-clad plate 1, the first copper-clad plate 1 is used for heat dissipation and electrical interconnection, and the second copper-clad plate 2 is used for heat dissipation. Fig. 2 shows that all the electrodes of the power chip 3 are electrically connected to the outside through a second copper-clad plate 2, the second copper-clad plate 2 being used for heat dissipation and electrical interconnection, and the first copper-clad plate 1 being used for heat dissipation.

In another example, the copper layers of the first copper-clad plate 1 and the second copper-clad plate 2 are respectively provided with an electrically interconnected circuit, the number of the power chips 3 is multiple, one part of the electrodes of the power chips 3 can be connected to the first copper-clad plate 1 to realize external electrical connection, and the other part of the electrodes of the power chips 3 can be connected to the second copper-clad plate 2 to realize external electrical connection.

For example, the electrode of the first power chip 31 of the plurality of power chips 3 is electrically connected to the first copper-clad laminate 1, and the electrode of the second power chip 32 of the plurality of power chips 3 is electrically connected to the second copper-clad laminate 2. Wherein the number of the first power chips 31 is at least one, the number of the second power chips 32 is at least one, and one first power chip 31 and one second power chip 32 are exemplified in fig. 3.

Referring to fig. 3, the first power chip 31 is located on the inner surface of the first copper-clad plate 1, the bottom surface of the first power chip 31 is welded with the inner surface of the first copper-clad plate 1, and the top surface of the first power chip 31 is connected with the first copper-clad plate 1 through a clip 4. Furthermore, the electrodes on the top and bottom surfaces of the first power chip 31 are connected to the first copper-clad plate 1, and the first power chip 31 is electrically connected to the external power through the first copper-clad plate 1.

With continued reference to fig. 3, the second power chip 32 is located on the inner surface of the second copper-clad plate 2, and the bottom surface of the second power chip 32 is welded with the inner surface of the second copper-clad plate 2, and the top surface of the second power chip 32 is connected with the second copper-clad plate 2 through a clip 4. Furthermore, the electrodes on the top surface and the bottom surface of the second power chip 32 are connected to the second copper-clad plate 2, and the second power chip 32 is electrically connected to the outside through the second copper-clad plate 2.

With continued reference to fig. 3, clip4 connects the electrode on the top surface of the first power chip 31 with the electrode on the inner surface of the first copper-clad plate 1, and clip4 connects the electrode on the top surface of the second power chip 32 with the electrode on the inner surface of the second copper-clad plate 2.

Therefore, referring to fig. 3, the clip4 includes a first portion 41 and a second portion 42 that are connected, where the first portion 41 of the clip4 is located between the first power chip 31 and the second copper-clad plate 2 and extends between the first power chip 31 and the second copper-clad plate 2, and is bent to the first copper-clad plate 1 to connect with the first copper-clad plate 1, and the second portion 42 of the clip4 is located between the second power chip 32 and the first copper-clad plate 1 and extends between the second power chip 32 and the first copper-clad plate 1 to bend to the second copper-clad plate 2 to connect with the second copper-clad plate 2.

It should be noted that the first copper-clad plate 1 and the second copper-clad plate 2 in fig. 3 are both used for heat dissipation and electrical interconnection.

It should be noted that, if there is an electrical interconnection relationship between the power chips 3 and 3, electrical interconnection may also be achieved through the clip4, and of course, electrical interconnection between the power chips 3 and 3 may also be achieved through the first copper-clad plate 1 or the second copper-clad plate 2.

Based on the above, the power chip 3 is electrically connected with which copper-clad plate, only the bottom surface of the power chip 3 is required to be welded with the inner surface of the copper-clad plate, and the top surface of the power chip 3 is connected with the electrode of the inner surface of the copper-clad plate through clip 4. Therefore, the placement of clip4 is not limited in this embodiment, and the top surface of the power chip 3 and the copper-clad plate welded by the power chip 3 are connected through clip 4.

Based on the above, referring to fig. 4, clip4 has connecting pieces 40, and the number of connecting pieces 40 is equal to that of power chips 3, and m, and connecting pieces 40 are fixedly connected to the top surfaces of power chips 3 one by one.

In an embodiment where m is greater than or equal to 2, referring to fig. 4, there may be a space between the connecting pieces 40, but the m connecting pieces 40 have an interconnection relationship, and the m connecting pieces 40 are integrally formed.

The function of clip4 is described below.

In one example, clip4 may be made of a conductive metal, such as copper and aluminum. As an example, clip4 is copper, and clip4 may be referred to as a Cu-clip.

In one example, electrical connection through clip4 can increase current carrying capability, reduce line resistance and parasitic inductance, and the like, as compared to electrical connection through bond wire.

In addition, clip4 not only has advantages in electrical connection, in terms of heat dissipation, but also can promote the heat dissipation capability of the power module. This is because clip4 is in contact with all of the power chips 3, and the area of clip4 is relatively large, e.g., the area of clip4 is larger than the area of any one of the power chips 3. Then, when the heat on a certain power chip is transferred to the copper-clad plate through the clip4, the clip4 can quickly absorb the heat on the power chip and transfer the heat to the copper-clad plate because the area of the clip4 is relatively large.

For example, referring to fig. 1, heat generated by the power chip 3 is directly transferred downward to the first copper-clad plate 1, and is quickly transferred upward to the second copper-clad plate 2 via the clip4 with a large area, so that heat is dissipated outward via the first copper-clad plate 1 and the second copper-clad plate 2. Referring to fig. 2, heat generated by the power chip 3 is directly transferred to the second copper-clad plate 2 upwards, and is quickly transferred to the first copper-clad plate 1 downwards through the clip4 with a large area, so that heat is dissipated outwards through the first copper-clad plate 1 and the second copper-clad plate 2. Referring to fig. 3, the heat generated by the first power chip 31 is directly transferred to the first copper-clad plate 1 downward, and is quickly transferred to the second copper-clad plate 2 upward via the clip4 with a large area, so that heat is dissipated outward via the first copper-clad plate 1 and the second copper-clad plate 2. The heat generated by the second power chip 32 is directly transferred to the second copper-clad plate 2 upwards, and is quickly transferred to the first copper-clad plate 1 downwards through the clip4 with a large area, so that heat is dissipated outwards through the first copper-clad plate 1 and the second copper-clad plate 2.

Therefore, the heat of the power chip 3 can be quickly transferred to the welded copper-clad plate no matter what the clip4 is, and the larger the number of the power chips 3 is, the larger the area of the clip4 is, so that the more obvious the clip4 is in terms of improving heat dissipation performance.

In one example, the shape of clip4 is primarily related to the number of power chips 3, the placement of these power chips 3, and which copper-clad plate each power chip 3 is electrically connected to. For example, clip4 may be in the shape of a frame or a band or strip.

For example, fig. 4 shows a schematic diagram of clip4, and fig. 4 shows a schematic diagram of two power chips 3 connected in parallel through clip 4.

The specific shape of clip4 is not limited in this embodiment, and may be flexibly designed according to practical situations.

Additional features of the power module are described below and may be illustrated in the configuration of the power module shown in fig. 1 for ease of description.

In one example, the fixed connections inside the power module may be connected by solder, by sintered silver, or by sintered copper.

For example, referring to fig. 5, the bottom surface of the power chip 3 is fixedly connected with the upper copper layer a of the first copper-clad laminate 1 by solder, sintered silver or sintered copper. The top surface of the power chip 3 and the clip4 can be fixedly connected by solder, sintered silver or sintered copper. The clip4 and the lower copper layer b of the second copper-clad plate 2 can be fixedly connected through solder or sintered silver or sintered copper. The clip4 is fixedly connected with the electrode of the first copper-clad plate 1 through solder or sintered silver or sintered copper. Wherein the black filled portion in fig. 5 represents solder or sintered silver or sintered copper.

As shown in fig. 6, which is a schematic structural diagram of a power module, referring to fig. 6, the power module further includes a molding compound 5, and the first copper-clad plate 1, the second copper-clad plate 2, the m power chips 3 and the clip4 are all encapsulated in the molding compound 5.

In one example, in order to avoid the interference of the molding compound 5 with the heat dissipation of the first copper-clad plate 1 and the second copper-clad plate 2, correspondingly, as shown in fig. 6, the upper surface of the molding compound 5 is flush with the outer surface of the second copper-clad plate 2 facing away from the power chip 3, that is, the upper surface of the molding compound 5 is flush with the outer surface of the upper copper layer a of the second copper-clad plate 2. Or the outer surface of the upper copper layer a of the second copper-clad plate 2 may be exposed.

With continued reference to fig. 6, the lower surface of the molding compound 5 is flush with the outer surface of the first copper-clad plate 1 facing away from the power chip 3, that is, the lower surface of the molding compound 5 is flush with the outer surface of the lower copper layer b of the first copper-clad plate 1. Or the outer surface of the lower copper layer b of the first copper-clad plate 1 may be exposed.

In an example, in order to further enhance the heat dissipation capability of the power module, as shown in fig. 7, which is a schematic structural diagram of the power module, referring to fig. 7, the power module further includes a heat dissipation structure 7, where the heat dissipation structure 7 may be a heat sink or a liquid cooling plate, and in fig. 7, the heat sink is exemplified.

In an example, the heat dissipation structure 7 may be located on a surface of the first copper-clad plate 1 facing away from the power chip 3, or may be mounted on a surface of the second copper-clad plate 2 facing away from the power chip 3, or may be mounted with a heat dissipation structure 7 on a surface of the first copper-clad plate 1 facing away from the power chip 3, or may be mounted with a heat dissipation structure 7 on a surface of the second copper-clad plate 2 facing away from the power chip 3.

For example, referring to fig. 7, the heat dissipation structure 7 is located below the first copper-clad plate 1 facing away from the power chip 3.

In one example, because the structural strength of the copper-clad plate is insufficient, the heat dissipation structure 7 is not easy to install, and then, as shown in fig. 7, the power module may further include a bottom plate 6, where the bottom plate 6 is located below the first copper-clad plate 1 and facing away from the power chip 3, and the heat dissipation structure 7 is installed below the bottom plate 6 and facing away from the first copper-clad plate 1.

The first copper-clad plate 1 and the bottom plate 6 are fixed together by solder, sintered silver or sintered copper, as described above.

In one example, in order to transfer the heat on the first copper-clad plate 1 to the heat dissipation structure 7, the heat is dissipated outwards through the heat dissipation structure 7, and accordingly, the material of the bottom plate 6 is a heat conducting material, so as to enhance the heat transfer between the first copper-clad plate 1 and the heat dissipation structure 7.

In one example, to further enhance the heat transfer between the first copper-clad laminate 1 and the heat dissipation structure 7, correspondingly, as shown in fig. 7, the power module further comprises a thermally conductive interface material (THERMAL INTERFACE MATERIAL, TIM) 8, wherein the TIM8 is located on the surface of the heat dissipation structure 7 facing the first copper-clad laminate 1. For example, the TIM fills between the heat sink structure 7 and the base plate 6 to absorb the air gap between the heat sink structure 7 and the base plate 6 to reduce the thermal resistance.

In this embodiment, the power module includes two copper-clad plates of first copper-clad plate and second copper-clad plate, and a plurality of power chips are located between two copper-clad plates, and two copper-clad plates are a plurality of power chips heat dissipation, and this kind of adoption two-sided radiating scheme can accelerate power chip heat dissipation, promotes power module's heat dispersion. And between first copper-clad plate and the second copper-clad plate, still arranged the clip, realize the electrical interconnection between power chip and first copper-clad plate or the second copper-clad plate by the clip, the area ratio of clip is great for the clip can be fast with the heat of power chip, transmits to the copper-clad plate, further accelerates power chip heat dissipation, thereby further promotes power module's heat dispersion.

In addition, the clip is arranged between the power chips and the copper-clad plate, and in the power module package, the clip is only required to be adhered to the surfaces of all the power chips, so that the package process can be simplified and the package efficiency can be improved compared with the case that the spacers are adhered to the surfaces of all the power chips respectively.

The embodiment also provides power equipment, which comprises a main board and the power module, wherein the power module is arranged on the main board and is electrically connected with other devices through the main board, and the power module is particularly used for realizing power conversion.

The terminology used in the description of the embodiments of the disclosure is for the purpose of describing the embodiments of the disclosure only and is not intended to be limiting of the disclosure. Unless defined otherwise, technical or scientific terms used in the embodiments of the present disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which the present disclosure belongs. The terms "first," "second," and the like in the description and in the claims, are not used for any order, quantity, or importance, but are used for distinguishing between different elements. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, is intended to mean that elements or items that are present in front of "comprising" or "comprising" are included in the word "comprising" or "comprising", and equivalents thereof, without excluding other elements or items. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, and when the absolute position of the object to be described is changed, the relative positional relationships may be changed accordingly. "plurality" means two or more, unless expressly defined otherwise.

Claims (10)

1. The power module is characterized by comprising a first copper-clad plate (1), a second copper-clad plate (2), m power chips (3) and a strip clip (4);

The m power chips (3) and the clip (4) are positioned between the first copper-clad plate (1) and the second copper-clad plate (2), and m is an integer greater than or equal to 1;

each power chip (3) is electrically connected with the first copper-clad plate (1) or the second copper-clad plate (2) through the clip (4).

2. The power module according to claim 1, characterized in that the copper layer of the first copper-clad plate (1) has electrically interconnected lines;

The bottom surfaces of the m power chips (3) are welded on the surface of the first copper-clad plate (1), wherein the bottom surface of the power chip (3) is the bottom surface of the substrate of the power chip (3);

The clip (4) is located between the top surfaces of the m power chips (3) and the second copper-clad plate (2), and is connected with the first copper-clad plate (1), wherein the top surface of the power chip (3) is the surface of the substrate opposite to the power chip (3).

3. The power module according to claim 1, wherein the copper layer of the first copper-clad plate (1) and the copper layer of the second copper-clad plate (2) both have electrically interconnected lines, and m is an integer greater than or equal to 2;

the bottom surface of a first power chip (31) in the m power chips (3) is welded on the surface of the first copper-clad plate (1), wherein the bottom surface of the first power chip (31) is the bottom surface of a substrate of the first power chip (31);

The bottom surface of a second power chip (32) in the m power chips (3) is welded on the surface of the second copper-clad plate (2), wherein the bottom surface of the second power chip (32) is the bottom surface of the substrate of the second power chip (32);

The first part (41) of the clip (4) is positioned between the top surface of the first power chip (31) and the second copper-clad plate (2) and is connected with the first copper-clad plate (1), wherein the top surface of the first power chip (31) is the surface facing away from the substrate of the first power chip (31);

The second part (42) of the clip (4) is located between the second power chip (32) and the first copper-clad plate (1) and is connected with the second copper-clad plate (2), wherein the top surface of the second power chip (32) is a surface opposite to the substrate of the second power chip (32);

The first part (41) and the second part (42) of the clip (4) are connected.

4. The power module according to claim 1, characterized in that the clip (4) has m connection pads (40), the connection pads (40) being connected one to one with the top surface of the power chip (3).

5. The power module according to claim 1, characterized in that the clip (4) is copper.

6. The power module according to claim 1, wherein the first copper-clad plate (1) is a direct copper-clad DBC ceramic plate or an active metal brazing AMB ceramic plate, and the second copper-clad plate (2) is a direct copper-clad DBC ceramic plate or an active metal brazing AMB ceramic plate.

7. The power module according to claim 1, further comprising a molding compound (5), wherein the first copper-clad plate (1), the second copper-clad plate (2), the m power chips (3) and the clip (4) are all encapsulated in the molding compound (5).

8. The power module according to claim 7, characterized in that a first surface of the plastic packaging material (5) is flush with an outer surface of the first copper-clad plate (1) facing away from the power chip (3), and a second surface of the plastic packaging material (5) is flush with an outer surface of the second copper-clad plate (2) facing away from the power chip (3).

9. The power module according to any of claims 1 to 8, characterized in that the power module further comprises a heat dissipation structure (7);

The first copper-clad plate (1) and/or the second copper-clad plate (2) are/is provided with the heat dissipation structure (7) on the outer surface facing away from the m power chips (3).

10. A power device, characterized in that it comprises a motherboard and a power module as claimed in any of claims 1 to 9, said power module being arranged on said motherboard, said power module being arranged to perform power conversion.