CN221806942U - MEMS resonator - Google Patents

Abstract

The present application discloses a MEMS resonator, including a device layer and a routing layer arranged in a stacked manner, wherein the device layer includes a ring resonator, a connecting beam, an anchor, a driving electrode, and a sensing electrode; the ring resonator is configured as a plurality and arranged in a ring array, a connecting beam is connected between adjacent ring resonators, at least one connecting beam is fixedly connected to an anchor located in the ring array, the driving electrode and some of the ring resonators are configured as driving capacitors; the sensing electrode and the remaining ring resonators are configured as sensing capacitors, the driving capacitor and the sensing capacitor are symmetrically arranged, and the routing layer includes a first routing line connecting each driving electrode in series, a second routing line connecting each sensing electrode in series, and a third routing line connected to the anchor. The routing can realize single-ended driving of the MEMS resonator, and at the same time, the driving electrode and the sensing electrode have the same effective capacitance and the capacitance is exactly the same, at which time the dynamic impedance of the resonator is the lowest and the signal strength is the highest.

Description

MEMS resonator

Technical Field

The application relates to the technical field of micro-electromechanical systems, in particular to an MEMS resonator.

Background

MEMS resonators are a type of microelectromechanical system (MEMS) device that is used to generate a stable oscillating signal. It is usually composed of micromechanical structures and electronic circuits, which can generate an oscillating signal with high accuracy over a wide frequency range. MEMS resonators play an important role in many applications. For example, in the field of communications, they are used in frequency control, clock synchronization, filtering, and the like. In the sensing field, they can be used in inertial navigation systems, gas sensors, biosensors, etc. In addition, MEMS resonators are also used in the fields of medical equipment, industrial automation, consumer electronics, and the like.

In a resonator, the variation of the dynamic impedance can have a significant impact on its performance. Dynamic impedance refers to impedance that varies with frequency in a circuit. In some cases, the dynamic impedance of the resonator varies greatly, resulting in an increase in distortion or nonlinear distortion of the resonator output signal.

Disclosure of utility model

The application provides a MEMS resonator, which aims to solve the problem of large dynamic impedance change of the existing resonator.

In order to achieve the technical effects, the application adopts the following technical scheme: the MEMS resonator comprises a device layer and a wiring layer which are arranged in a stacked mode, wherein the device layer comprises an annular resonator, a connecting beam, an anchoring piece, a driving electrode and a sensing electrode; the annular resonators are configured into a plurality of annular arrays, the connecting beams are connected between adjacent annular resonators, at least one connecting beam is fixedly connected with an anchoring piece positioned in the annular array, and the driving electrode and part of the annular resonators are configured into a driving capacitor; the sensing electrode and the rest of the annular harmonic oscillators are configured to be sensing capacitors, and the driving capacitors and the sensing capacitors are symmetrically arranged;

The wiring layer comprises a first wiring connected with each driving electrode in series, a second wiring connected with each sensing electrode in series and a third wiring connected with the anchoring piece, wherein the first wiring, the second wiring and the third wiring are arranged in a staggered mode, and the first wiring and the second wiring are symmetrically arranged.

Preferably, the wiring layer further comprises a driving terminal, a sensing terminal and a bias terminal which are respectively arranged on the wiring layer; the first wire is electrically connected with the driving terminal, the second wire is electrically connected with the sensing terminal, and the third wire is electrically connected with the bias terminal.

Preferably, the number of the annular resonators is twelve, and two ends of each connecting beam are respectively connected with one annular resonator, so that the twelve annular resonators and the corresponding connecting beams are arranged in a surrounding manner to form a cross shape and are arranged in an annular array.

Preferably, the annular array has a center;

The driving capacitor and the sensing capacitor are arranged in a central symmetry way by taking the center as the center; or defining a straight line passing through the center as a first straight line, wherein the driving capacitor and the sensing capacitor are arranged in an axisymmetric way by taking the first straight line as a symmetry axis.

Preferably, the driving electrode includes:

The first sub-driving electrode is arranged on the inner side of the annular array and is arranged in a clearance with the corresponding annular harmonic oscillator; and

The second sub-driving electrode is arranged on the outer side of the annular array and is arranged in a gap with the corresponding annular harmonic oscillator, and the first wiring is connected in series to form the first sub-driving electrode and the second sub-driving electrode.

Preferably, the sensing electrode includes:

The first sub-sensing electrode is arranged on the inner side of the annular array and is arranged in a clearance with the corresponding annular harmonic oscillator; and

The second sub-sensing electrode is arranged on the outer side of the annular array and is arranged in a gap with the corresponding annular harmonic oscillator, and the second wiring is connected in series to form the first sub-sensing electrode and the second sub-sensing electrode.

Preferably, the ring resonator is configured as a ring shape.

Preferably, the connection beam is configured as a resilient straight beam.

Preferably, the anchor is cross-shaped, at least one cross-shaped end of the anchor being connected to the connecting beam.

Preferably, the routing layer is in a rounded rectangle shape.

According to the scheme, single-end driving of the MEMS resonator can be realized through wiring, meanwhile, the effective capacitance of the driving electrode is identical to that of the sensing electrode, the capacitance is identical, at the moment, the dynamic impedance of the MEMS resonator is the lowest, and the signal strength is the highest.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of an exemplary device layer structure of the present application;

FIG. 2 is a schematic diagram of an exemplary wiring layer of the present application;

FIG. 3 is a schematic diagram of another example of a trace layer of the present application;

Fig. 4 is a schematic structural view of an example of the overall structure of the MEMS resonator of the present application.

10. A ring resonator; 20. a connecting beam; 21. a center; 22. a first straight line; 30. a driving electrode; 31. a first sub-driving electrode; 32. a second sub-driving electrode; 40. a sensing electrode; 41. a first sub-sensing electrode; 42. a second sub-sense electrode; 50. an anchor; 51. a fixed section; 52. a connection section; 60. a wiring layer; 61. a first wiring; 62. a second wiring; 63. a third wiring; 64. a drive terminal; 65. a sense terminal; 66. a bias terminal; 67. and a ground terminal.

Detailed Description

The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.

In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In the present application, the term "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described as "exemplary" in this disclosure is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the application. In the following description, details are set forth for purposes of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes have not been described in detail so as not to obscure the description of the application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

The resonator is widely used as a linear passive element in electronic devices such as household appliances, automobile electronic devices, security devices, industrial devices, medical devices, aviation devices and the like. MEMS resonators are a type of MEMS resonant element that can convert a small amount of force into resonant energy and create a resonant frequency. The working principle of the MEMS resonator is as follows: when an external input force excites one annular harmonic oscillator element, the annular harmonic oscillator is vibrated to form a waveform with a specific frequency, and therefore resonance energy is generated.

In some cases, the MEMS resonator comprises a driving electrode, an induction electrode and a ring resonator, wherein a capacitive driving structure is arranged between the driving electrode and the ring resonator, and the driving electrode applies voltage to induce the ring resonator to generate resonance; the sensing electrode and the annular harmonic oscillator are configured to sense capacitance, and a resonant frequency electric signal can be output through the sensing electrode.

During operation of a MEMS resonator, changes in dynamic impedance can cause shifts in resonant frequency, which can affect resonator performance such as bandwidth, selectivity, and stability. The change in dynamic impedance also affects the impedance matching of the resonator. In designing resonators, it is often necessary to ensure impedance matching of the input and output terminals. When the dynamic impedance changes, the input and output impedance of the resonator also changes, resulting in failure of the impedance match, which may lead to reflection of signal energy, increased power consumption, and reduced resonator performance. In addition, the change in dynamic impedance can also have an effect on the linearity of the resonator. During operation, the resonator is often affected by external interference or nonlinear factors, resulting in a change in dynamic impedance. Since the change in dynamic impedance changes the characteristics of the resonator circuit, an increase in distortion or nonlinear distortion of the output signal may result. Therefore, reducing the dynamic impedance in a MEMS resonator is critical to improving the performance of the resonator.

Referring to fig. 1 to 4, an example of the present application proposes a MEMS resonator (hereinafter referred to as resonator) comprising a device layer (not shown in the drawings) and a trace layer 60, which are stacked, wherein the device layer comprises a ring resonator 10, a connection beam 20, an anchor 50, a driving electrode 30, and a sensing electrode 40; the annular resonators 10 are configured to be a plurality of annular arrays, connecting beams 20 are connected between adjacent annular resonators 10, at least one connecting beam 20 is fixedly connected with an anchor 50 positioned in the annular array, and the driving electrode 30 and part of the annular resonators 10 are configured to drive a capacitor; the sensing electrode 40 and the remaining ring resonator 10 are configured as a sensing capacitance, and the driving capacitance and the sensing capacitance are symmetrically arranged.

The ring resonator 10 is used for generating resonance, and when the driving electrode 30 and the ring resonator 10 are provided with a capacitive driving structure, the driving electrode 30 applies voltage, and the ring resonator 10 generates vibration according to a preset rule. The ring resonator 10 in the example of the present application may have a circular ring shape or a polygonal ring shape, and for example, the ring resonator 10 may have a triangular ring shape, a rectangular ring shape, or the like.

The number of ring resonators 10 in this example is plural, and the number of ring resonators 10 may be four, six, eight, ten or twelve. Alternatively in this example, each connecting beam 20 connects two ring resonators 10, and may be a cross-shaped ring array of twelve ring resonators 10. Other numbers of rectangular ring array structures are also possible, such as four ring array structures, eight ring array structures, etc., without limitation. The connection beam 20 is used for connecting the ring resonator 10, and the connection beam 20 may be a straight beam structure, a curved beam structure, or the like, and is not limited herein. In this example, alternatively, two ends of the connection beam 20 are respectively connected to a ring resonator 10. In some examples, the connecting beam 20 is a resilient straight beam.

Of the plurality of ring resonators 10, a part of the ring resonators 10 may be disposed adjacent to the driving electrode 30 and disposed with a gap from the driving electrode 30 such that the driving electrode 30 and the corresponding ring resonator 10 are configured as a driving capacitance. The driving electrode 30 applies an alternating voltage to induce the corresponding ring resonator 10 to resonate. Of the plurality of ring resonators 10, the remaining ring resonators 10 may be disposed adjacent to the sensing electrode 40 with a gap therebetween such that the sensing electrode 40 and the corresponding ring resonator 10 are configured to sense capacitance. The sensing capacitor can be used to output a resonant frequency electrical signal.

The sensing capacitor and the driving capacitor in this example are symmetrically arranged, which means that the sensing capacitor and the driving capacitor are axisymmetric or centrosymmetric.

Taking the structural form as in fig. 1 as an example, taking the first straight line 22 as a symmetry axis, one side of the resonator is a driving capacitor, the other side of the resonator is a sensing capacitor, the driving capacitor and the sensing capacitor are symmetrically arranged, the input impedance and the output impedance are more matched, the effective capacitance of the driving electrode 30 and the sensing electrode 40 is the same, the dynamic impedance is lower at the moment, and the signal strength of the resonator is also better.

The driving capacitor and the sensing capacitor in the example are symmetrically arranged, and when the wiring layer 60 of the resonator performs wiring, the wirings of the driving capacitor and the sensing capacitor can be staggered, so that on one hand, the mutual interference between the wirings can be reduced, the signal interference of the resonator can be reduced, and the dynamic impedance is further reduced; on the other hand, the wires can be staggered, so that the wires do not have the cross problem when the wire layer 60 is used for wiring, the structure of the wire layer 60 can be simplified, and the processing technology of the resonator is simplified; in yet another aspect, the method is helpful for reducing dynamic impedance changes caused by external interference factors, and reducing distortion or nonlinear distortion of an output signal.

In this example, the plurality of ring resonators 10 are configured in a ring array, so that stability of the ring resonators 10 can be improved, dynamic impedance variation caused by external interference factors can be reduced, and distortion or nonlinear distortion of an output signal can be reduced.

In some examples, the plurality of ring resonators 10 are configured in a ring array arrangement, the ring array having a center 21; the driving capacitor and the sensing capacitor are arranged in a central symmetry way by taking the center 21 as the center; the center 21 in this example may be the geometric center of the annular array. The number of driving capacitors and sensing capacitors in this example may be one, or may have a plurality of driving capacitors and a plurality of sensing capacitors at the same time.

In some examples, the resonator further includes an anchor 50, and the anchor 50 may be used to connect the ring resonator 10 with a predetermined position of a substrate (not shown in the figures) to support the ring resonator 10 at the predetermined position on the substrate so that the ring resonator 10 is suspended from the substrate. The ring resonator 10 has a gap from the substrate surface so that the ring resonator 10 has a space required for vibration.

Alternatively, the anchors 50 may be connected to the connection beam 20. Specifically, the anchor 50 has one end connected to the connection beam 20 and the other end for connection to the substrate. One end of the anchor 50 may be connected to the middle of the connection beam 20, and the other end of the anchor 50 may be welded to the substrate or may be connected to the substrate by other means.

Alternatively, the number of the ring resonators 10 is at least four, and the ring resonators 10 and the connection beams 20 are enclosed into a ring structure. The number of anchors 50 is plural, and the plural anchors 50 are arranged at intervals. By providing a plurality of anchors 50 in this example, the ring resonator 10 can be supported from a plurality of positions to promote stability of the ring resonator 10. In this example, by distributing the plurality of ring resonators 10 at intervals, the vibration amplitudes of the plurality of ring resonators 10 can be approximated, so that the sensing electrode 40 can obtain a stable frequency signal.

In this example, a plurality of ring resonators 10 are surrounded to form a ring structure, and anchors 50 are located inside the ring structure. Alternatively, the number of the ring resonators 10 is twelve, and the ring resonators 10 and the connection beams 20 enclose a cross-shaped ring array. The anchors 50 are located inside the cross-shaped annular array. So that the anchor 50 does not occupy the space outside the ring resonator 10, which is helpful to fully utilize the space structures inside the ring resonators 10, and facilitate the miniaturized design of the resonator. In some examples, the anchor 50 is cross-shaped, with at least one cross-shaped end of the anchor 50 being connected to the connection beam 20. The annular array formed by the plurality of annular resonators 10 has a center 21, the anchor 50 has a fixing section 51 and a connecting section 52 connected to the fixing section 51, the fixing section 51 in this example may be provided at the geometric center of the annular array, i.e. at the center 21, the connecting section 52 is connected to the connecting beam 20 remote from the center 21, and the fixing section 51 is used for connection to the substrate. The anchor 50 in this example has a fixed section 51 for attachment to the substrate and a connecting section 52 for attachment of the fixed section 51 to the connecting beam 20. By connecting the connection segments 52 with the connection beam 20 away from the center 21, the effect of the stress of the anchors 50 on the ring resonator 10 can be reduced. In some examples, the number of connecting segments 52 is four, and the ends of the four connecting segments 52 remote from the fixed segment 51 are respectively connected to the connecting beams 20 remote from the center 21. The anchors 50 in this example may be symmetrically disposed about the first straight line 22 as the symmetry axis in the above example, or may be symmetrically disposed about the center 21 as the center.

In some examples, the resonator further comprises a rounded rectangular trace layer 60, the trace layer 60 comprising a first trace 61 in series with each drive electrode 30, a second trace 62 in series with each sense electrode 40, and a third trace 63 connected to the anchor 50, wherein the first trace 61, the second trace 62, the third trace 63 are offset, and the first trace 61 is symmetrically disposed with the second trace 62. The first wiring 61 is used for connecting the driving electrode 30 in series to the corresponding terminal; the second wire 62 is used for connecting the sensing electrode 40 in series to a corresponding terminal, the third wire 63 is used for transmitting a direct-current bias voltage to the ring resonator 10, and the first wire 61, the second wire 62 and the third wire 63 can be positioned on the same plane on the wire layer 60 and do not interfere with each other so as to simplify the manufacturing process of the leads of the wire layer 60. The third wire 63 is electrically connected to at least one anchor, by means of which the bias voltage signal is transmitted to the anchor, the connection beam, the ring resonator.

The first trace 61, the second trace 62 and the third trace 63 in this example may be provided using photolithography, etching, deposition and/or doping techniques for electrical signal transmission with the corresponding electrodes. The first, second and third wires 61, 62 and 63 in the example of the present application may be metal plating.

The wiring layer 60 is provided with a drive terminal 64, a sense terminal 65, and a bias terminal 66, the drive terminal 64 is connected to the first wiring 61, the sense terminal 65 is connected to the second wiring 62, and the bias terminal 66 is connected to the third wiring 63.

The first wiring 61 connects all the driving electrodes 30 in series to the driving terminal 64, and the driving voltage is supplied to the driving electrodes 30 through the driving terminal 64 and the first wiring 61; the second wiring 62 connects all the sensing electrodes 40 in series to the sensing terminal 65, and the resonant frequency electric signal of the resonator is output to the back-end processing circuit through the second wiring 62 and the sensing terminal 65; the third wire 63 inputs a bias voltage to the anchor 50 through the bias terminal 66, and the third wire 63 supplies a dc bias voltage to the ring resonator 10 through the bias terminal 66. The single-ended drive of the MEMS resonator can be realized through wiring, meanwhile, the effective capacitance of the drive electrode and the effective capacitance of the sensing electrode are identical, the capacitance is identical, and at the moment, the dynamic impedance of the resonator is the lowest, and the signal strength is the highest.

In some examples, the device layer 60 further includes a ground terminal 67 for grounding, and the number of ground terminals 67 may be plural, with the plural ground terminals 67 being disposed at intervals. By providing a plurality of ground terminals 67 in this example, it is possible to ensure reliable grounding, the ground terminals 67 being used to ground the rest of the structure of the device (e.g., the outer frame, the electrical shielding structure, the top metal, etc.), thereby avoiding floating potentials.

In some examples, the annular array has a center 21; a straight line passing through the center 21 is defined as a first straight line 22, and the driving capacitor and the sensing capacitor are disposed in axisymmetry with the first straight line 22 as a symmetry axis. The center 21 in this example may be a geometric center of an annular array, the first straight line 22 is a straight line passing through the center 21, the first straight line 22 is used as a symmetry axis, and the driving capacitor and the sensing capacitor are symmetrically arranged.

In some examples, the drive electrodes 30 include a first sub-drive electrode 31 and a second sub-drive electrode 32, the first sub-drive electrode 31 being disposed inside the annular array and being disposed in gap with the corresponding annular resonator 10; the second sub-driving electrode 32 is arranged outside the annular array and is arranged in a gap with the corresponding annular harmonic oscillator 10, and the first wiring 61 is connected in series with the first sub-driving electrode 31 and the second sub-driving electrode 32.

The first sub-driving electrode 31 and the second sub-driving electrode 32 in this example are configured as driving capacitances with the ring resonator 10, respectively. In this example, by adopting the first sub-driving electrode 31 and the second sub-driving electrode 32, the driving area is increased, and by increasing the capacitance area, more electric quantity can be stored, and thus the dynamic impedance can be reduced, and the signal strength can be increased.

In some examples, the sensing electrode 40 includes a first sub-sensing electrode 41 and a second sub-sensing electrode 42, the first sub-sensing electrode 41 being disposed inside the annular array and disposed in gap with the corresponding annular resonator 10; the second sub-sensing electrode 42 is disposed outside the annular array and is disposed in a gap with the corresponding annular resonator 10, and the second trace 62 is connected in series with the first sub-sensing electrode 41 and the second sub-sensing electrode 42. The first sub-sensing electrode 41 and the second sub-sensing electrode 42 in this example are configured as sensing capacitances with the ring resonator 10, respectively, and thus can contribute to a reduction in dynamic impedance and an increase in signal strength.

In some examples, the number of the ring resonators 10 is twelve, two ends of each connecting beam 20 are respectively connected with one ring resonator 10, and two adjacent connecting beams 20 are vertically arranged, so that the twelve ring resonators 10 and the corresponding connecting beams 20 enclose to form a cross-shaped ring structure. In this example, four ring resonators 10 are located in the middle, as an inner ring structure, the remaining eight ring resonators 10 are grouped in pairs, as an outer ring structure, to form four end portions of a cross shape, and the twelve ring resonators 10 are sequentially connected to form a closed ring structure of the cross shape. In this example, the annular resonator 10 with the cross-shaped closed annular structure is adopted, so that the annular resonator 10 tends to be symmetrically arranged, the dynamic impedance of the resonator is reduced, the performance of the resonator device can be conveniently controlled, and the performance of the resonator device is improved. Alternatively in this example, the outer ring structure corresponding to the four ends of the cross may be connected to the substrate through anchors 50, and the anchors 50 may be connected to the connection beams 20 of the outer ring structure. The annular structure formed by the twelve ring resonators 10 in the present example may be a center symmetrical structure with the center 21 in the above example as the center, or may be axisymmetrically arranged with the first straight line 22 described in the above example as the symmetry axis.

The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the present application.

Claims (10)

1. A MEMS resonator, characterized in that it comprises a stacked device layer and a routing layer, wherein the device layer comprises a ring resonator, a connecting beam, an anchor, a driving electrode and a sensing electrode; the ring resonators are configured as a plurality and arranged in a ring array, the connecting beams are connected between adjacent ring resonators, at least one of the connecting beams is fixedly connected to an anchor located in the ring array, the driving electrode and some of the ring resonators are configured as driving capacitors; the sensing electrode and the remaining ring resonators are configured as sensing capacitors, and the driving capacitors and the sensing capacitors are symmetrically arranged; The routing layer includes a first routing line connecting each driving electrode in series, a second routing line connecting each sensing electrode in series, and a third routing line connected to the anchor, wherein the first routing line, the second routing line and the third routing line are staggered, and the first routing line and the second routing line are symmetrically arranged. 2. The MEMS resonator as described in claim 1 is characterized in that the routing layer also includes a driving terminal, a sensing terminal and a bias terminal; wherein the first routing is electrically connected to the driving terminal, the second routing is electrically connected to the sensing terminal, and the third routing is electrically connected to the bias terminal. 3. The MEMS resonator as described in claim 1 is characterized in that the number of the annular resonators is twelve, and each of the two ends of the connecting beam is respectively connected to a annular resonator, so that the twelve annular resonators and the corresponding connecting beams are arranged in a cross-shaped annular array. 4. A MEMS resonator according to any one of claims 1 to 3, wherein the annular array has a center; The driving capacitor and the sensing capacitor are centrally symmetrically arranged with the center as the center; or, a straight line passing through the center is defined as a first straight line, and the driving capacitor and the sensing capacitor are axisymmetrically arranged with the first straight line as the axis of symmetry. 5. The MEMS resonator according to any one of claims 1 to 3, wherein the driving electrode comprises: A first sub-driving electrode is disposed inside the annular array and is disposed corresponding to the gap between the annular resonators; and The second sub-driving electrode is arranged outside the annular array and is arranged in a gap corresponding to the annular resonator. The first wiring connects the first sub-driving electrode and the second sub-driving electrode in series. 6. The MEMS resonator according to any one of claims 1 to 3, wherein the sensing electrode comprises: A first sub-sensing electrode is disposed inside the annular array and is disposed corresponding to the gap between the annular resonators; and The second sub-sensing electrode is arranged outside the annular array and is arranged corresponding to the gap of the annular resonator. The second wiring connects the first sub-sensing electrode and the second sub-sensing electrode in series. 7 . The MEMS resonator according to claim 1 , wherein the ring resonator is configured in a circular ring shape. 8 . The MEMS resonator according to claim 1 , wherein the connecting beam is configured as an elastic straight beam. 9 . The MEMS resonator according to claim 1 , wherein the anchor is cross-shaped, and at least one cross-shaped end of the anchor is connected to the connecting beam. 10 . The MEMS resonator according to claim 1 , wherein the wiring layer is in a rounded rectangular shape.