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CN221806939U - MEMS Resonators - Google Patents

MEMS Resonators Download PDF

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Publication number
CN221806939U
CN221806939U CN202323515535.6U CN202323515535U CN221806939U CN 221806939 U CN221806939 U CN 221806939U CN 202323515535 U CN202323515535 U CN 202323515535U CN 221806939 U CN221806939 U CN 221806939U
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electrode
annular
routing
resonators
terminal
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CN202323515535.6U
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朱怀远
吴振云
李明
金怡
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Mestar Microelectronics Shenzhen Co ltd
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Mestar Microelectronics Shenzhen Co ltd
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Abstract

The application discloses an example of an MEMS resonator, which comprises a device layer and a wiring layer which are arranged in a stacked manner, wherein the device layer comprises an annular harmonic oscillator, a connecting beam, an anchoring piece, a first electrode, a second electrode, a third electrode and a fourth electrode; the annular resonators are configured into a plurality of annular arrays, and the first electrode surrounds the annular resonators and is arranged with the annular resonators in a clearance manner; a second electrode which is arranged in the partial annular harmonic oscillator in a clearance way is arranged in the partial annular harmonic oscillator, and the first electrode and the second electrode are configured into a differential driving structure; the third electrode is arranged in the annular array and is in clearance arrangement with the annular harmonic oscillator; a fourth electrode which is arranged in the partial annular harmonic oscillator in a clearance way is arranged in the partial annular harmonic oscillator, and the third electrode and the fourth electrode are configured into another differential driving structure; the annular harmonic oscillator is driven in a differential mode by adopting a differential driving structure, so that the common mode interference resistance can be improved when a high-frequency signal is processed, and the transmission speed can be improved.

Description

MEMS resonator
Technical Field
The application relates to the technical field of micro-electromechanical systems, in particular to an MEMS resonator.
Background
MEMS resonators are a type of microelectromechanical system (MEMS) device that is used to generate a stable oscillating signal. It is usually composed of micromechanical structures and electronic circuits, which can generate an oscillating signal with high accuracy over a wide frequency range.
In some cases, the resonator has weak common mode interference resistance when processing high frequency signals, and the transmission speed is relatively slow.
Disclosure of utility model
The application provides an MEMS resonator, which aims to solve the problems of weak common mode interference resistance and low transmission speed when the existing resonator processes high-frequency signals.
In order to achieve the technical effects, the application adopts the following technical scheme: the MEMS resonator comprises a device layer and a wiring layer which are arranged in a stacked mode, wherein the device layer comprises an annular resonator, a connecting beam, an anchoring piece, a first electrode, a second electrode, a third electrode and a fourth electrode; the annular resonators are configured into a plurality of annular arrays, the connecting beams are connected between the adjacent annular resonators, and at least one connecting beam is fixedly connected with the anchoring piece positioned in the annular arrays of the annular resonators;
The first electrode surrounds a plurality of the resonators and is arranged with the annular resonators in a gap manner; a second electrode which is arranged in the annular harmonic oscillator in a clearance way is arranged in part of the annular harmonic oscillator, and the first electrode and the second electrode are configured into a differential driving structure; the third electrode is arranged in the annular array and is in clearance arrangement with the annular harmonic oscillator; the fourth electrode is arranged in part of the annular harmonic oscillator in a clearance way, and the third electrode and the fourth electrode are configured into another differential driving structure;
The wiring layer comprises a first wiring connected with each first electrode in series, a second wiring connected with each second electrode in series, a third wiring connected with each third electrode in series, a fourth wiring connected with each fourth electrode in series and a fifth wiring connected with the anchoring piece; the first wire, the second wire, the third wire and the fourth wire are staggered and are arranged at intervals from outside to inside.
Preferably, the wiring layer further comprises a driving terminal, an induction terminal, a bias terminal and a grounding terminal; the driving terminal comprises a positive phase driving terminal and a negative phase driving terminal, and the sensing terminal comprises a positive phase sensing terminal and a negative phase sensing terminal;
One of the first wiring and the second wiring is electrically connected with the positive phase driving terminal, and the other is electrically connected with the negative phase driving terminal; one of the third wire and the fourth wire is electrically connected with the positive phase induction terminal, and the other is electrically connected with the negative phase induction terminal; the fifth wiring is electrically connected with the bias terminal, and the grounding terminal is used for grounding.
Preferably, the sensing terminal and the driving terminal are respectively positioned at two different vertex angle positions of the wiring layer.
Preferably, the number of the annular resonators is twelve, and two ends of each connecting beam are respectively connected with one annular resonator, so that the twelve annular resonators and the corresponding connecting beams are arranged in a surrounding manner to form a cross shape and are arranged in an annular array.
Preferably, one of the first electrode and the second electrode is a positive drive electrode, and the other is a negative drive electrode;
one of the third electrode and the fourth electrode is a positive phase induction electrode, and the other is a negative phase induction electrode.
Preferably, the ring resonator is configured as a ring shape.
Preferably, the connection beam is configured as a resilient straight beam.
Preferably, the anchor is cross-shaped, at least one cross-shaped end of the anchor being connected to the connecting beam.
Preferably, the routing layer is in a rounded rectangle shape.
According to the scheme, the annular harmonic oscillator is driven in a differential mode by adopting the differential driving structure, so that the common mode interference resistance can be improved when a high-frequency signal is processed, and the transmission speed can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an exemplary device layer structure of the present application;
FIG. 2 is a schematic diagram of an exemplary wiring layer of the present application;
FIG. 3 is a schematic diagram of another example of a trace layer of the present application;
fig. 4 is a schematic structural view of an example of the MEMS resonator of the present application.
100; A ring resonator; 10. a first harmonic oscillator; 11. a first annular cavity; 20. a second harmonic oscillator; 21. a second annular cavity; 30. a connecting beam; 31. an anchor; 311. a fixed section; 312. a connection section; 313. a first center; 40. a first electrode; 41. a second electrode; 50. a third electrode; 51. a fourth electrode; 60. a wiring layer; 61. a drive terminal; 611. a positive drive terminal; 612. a negative phase drive terminal; 613. a first wiring; 614. a second wiring; 62. an induction terminal; 621. a positive phase induction terminal; 622. a negative phase induction terminal; 623. a third wiring; 624. a fourth wiring; 63. a bias terminal; 631. a fifth wiring; 64. and a ground terminal.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present application, the term "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described as "exemplary" in this disclosure is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the application. In the following description, details are set forth for purposes of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes have not been described in detail so as not to obscure the description of the application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
The resonator is widely used as a linear passive element in electronic devices such as household appliances, automobile electronic devices, security devices, industrial devices, medical devices, aviation devices and the like.
MEMS resonators are a type of MEMS resonant element that can convert a small amount of force into resonant energy and create a resonant frequency. The working principle of the MEMS resonator is as follows: when a harmonic oscillator element is excited by external force, the harmonic oscillator is vibrated, and a waveform with a specific frequency is set, so that resonance energy is generated.
In some cases, the MEMS resonator comprises a driving electrode, an induction electrode and a ring resonator, a capacitive driving structure is formed between the driving electrode and the ring resonator, and the driving electrode applies a voltage to induce the ring resonator to resonate; an inductive capacitor is formed between the inductive electrode and the annular harmonic oscillator, and a resonant frequency electric signal can be output through the inductive electrode.
When some MEMS resonators are used, the common-mode interference resistance is poor and the transmission speed is low when high-frequency signals are processed.
Referring to fig. 1, the present application proposes an example of a MEMS resonator (hereinafter referred to as resonator), which includes a device layer (not shown in the drawings) and a trace layer 60 that are stacked, wherein the device layer includes a ring resonator 100, a connection beam 30, an anchor 31, a first electrode 40, a second electrode 41, a third electrode 50, and a fourth electrode 51; the annular resonators 100 are configured in a plurality of annular arrays, connecting beams 30 are connected between adjacent annular resonators 100, and at least one connecting beam 30 is fixedly connected with an anchor 31 positioned in the annular arrays of the plurality of annular resonators 100.
The ring resonator 100 is used for generating resonance, and when the driving electrode and the ring resonator 100 are provided with a capacitive driving structure, the driving electrode applies voltage, and the ring resonator 100 generates vibration according to a preset rule. The ring resonator 100 in the example of the present application may have a circular or polygonal ring structure, and for example, the ring resonator 100 may have a triangular ring shape, a rectangular ring shape, or the like. In this example, the plurality of ring resonators 100 are distributed at intervals, so that the vibration amplitudes of the plurality of ring resonators 100 can be close, and the sensing electrode can conveniently obtain a stable frequency signal. Alternatively in this example, the ring structure may be a closed ring.
Referring to fig. 1 to 4, the number of ring resonators 100 in the present example is plural, and the number of ring resonators 100 may be four, six, eight, ten or twelve. Alternatively, in this example, each connecting beam 30 connects two ring resonators 100, and may be a cross-shaped ring structure formed by twelve ring resonators 100. Other numbers of rectangular ring array structures are also possible, such as four ring array structures, eight ring array structures, etc., without limitation.
The first electrode 40 surrounds the plurality of resonators and is disposed in gap with the ring resonator 100; the second electrode 41 is arranged in the partial annular harmonic oscillator 100 and is in clearance with the partial annular harmonic oscillator, and the first electrode 40 and the second electrode 41 are configured into a differential driving structure; the third electrode 50 is arranged in the annular array and is arranged in a gap with the annular harmonic oscillator 100; a fourth electrode 51 is disposed in the partial ring resonator 100 in a gap therebetween, and the third electrode 50 and the fourth electrode 51 are configured as another differential driving structure.
The ring resonator 100 in the example of the present application may include a plurality of first resonators 10 and a plurality of second resonators 20, and the shapes and sizes of the first resonators 10 and the second resonators 20 may be the same or different. The number of the first resonators 10 and the second resonators 20 in this example may be the same or different. The connecting beams 30 are used for connecting two adjacent annular resonators 100, each connecting beam 30 is respectively connected with two annular resonators 100, the connecting beams 30 can be used for connecting two first resonators 10, the connecting beams 30 can also be used for connecting two second resonators 20, and the connecting beams 30 can also be used for connecting the first resonators 10 and the second resonators 20. The connecting beam 30 in the example of the present application may have a linear structure, the connecting beam 30 may have a curved structure, and the connecting beam 30 may have a combination of linear and curved structures. Alternatively, the connecting beam 30 in the example of the present application may be a resilient straight beam.
In the present embodiment, the first electrode 40 and the second electrode 41 form a differential driving structure, and the third electrode 50 and the fourth electrode 51 form another differential driving structure, so that the harmonic oscillator can realize differential driving. In the differential drive structure in this example, a normal phase resonator and a reverse phase resonator may be formed, and adjustment of the resonance frequency is achieved by controlling the coupling force between the normal phase resonator and the reverse phase resonator. When a voltage or current is applied, a phase difference occurs between the normal resonator and the reverse resonator, thereby generating a differential signal. The phase difference of the differential signals can be changed by adjusting the coupling force of the normal resonator and the reverse resonator, thereby realizing the adjustment of the resonant frequency. The differential resonator in the example of the application has the advantages of small volume, low power consumption, adjustable frequency and the like, so the differential resonator can be used in the fields of wireless communication, oscillators, filters and the like; the differential resonator in examples of the application may be used to implement a frequency tunable oscillator, a frequency selector for a wireless communication system, a filter for implementing frequency tuning, and the like.
The differential resonator in the examples of the application can be composed of micro devices and can have the characteristics of small size and low power consumption, which makes it very suitable for integration into high frequency circuits, in particular in wireless communication systems. The differential resonator in the embodiment of the application can reduce the occupied space of the system through small size, and the low power consumption can prolong the service life of the battery and improve the efficiency of the system. The differential resonators in the examples of the present application can achieve high resonant frequencies in high frequency applications, typically up to several GHz and even higher, which makes them very useful in high frequency applications such as high speed data transmission, wireless communication and radar systems. The differential resonator in the examples of the present application has the characteristics of high accuracy and stability, can achieve a higher quality factor (Q value), and has less influence on temperature and environmental changes, which enables it to provide stable and reliable performance in high frequency applications.
Referring to fig. 1, in some examples, the resonator further includes an anchor 31, the anchor 31 being used to support the ring resonator 100 on the substrate so that the ring resonator 100 can be suspended at a predetermined position on the substrate. The anchor 31 in this example may be connected to any of the connection beams 30. In some examples, the anchor 31 is cross-shaped, with at least one cross-shaped end of the anchor 31 being connected to the connection beam 30. The anchor 31 has a fixing section 311 and a connecting section 312 connected to the fixing section 311, the fixing section 311 in this example may be provided at the geometric center of the ring-shaped structure, i.e. at the first center 313, the connecting section 312 being connected to the connecting beam 30 remote from the first center 313, the fixing section 311 being for connection to the substrate. The fixing section 311 of the anchor 31 in this example is for connection to the substrate, and the connection section 312 is for connection of the fixing section 311 and the connection beam 30. By connecting the connection section 312 with the connection beam 30 away from the first center 313, the influence of the stress of the anchor 31 on the ring resonator 100 can be reduced.
In some examples, the resonator further includes a trace layer 60, the trace layer 60 including a first trace 613 in series with each first electrode 40, a second trace 614 in series with each second electrode 41, a third trace 623 in series with each third electrode 50, and a fourth trace 624 in series with each fourth electrode 51, and a fifth trace 631 connected to anchor 31; the first trace 613, the second trace 614, the third trace 623 and the fourth trace 624 are offset from each other and are disposed at intervals from outside to inside. In this example, by arranging the first trace 613, the second trace 614, the third trace 623 and the fourth trace 624 in a staggered manner from outside to inside, mutual interference between the traces can be reduced, so as to simplify wiring and simplify the manufacturing process of the resonator.
The first trace 613, the second trace 614, the third trace 623, and the fourth trace 624 in this example may be provided using photolithography, etching, deposition, and/or doping techniques for electrical signal transmission to the respective electrodes. Optionally, the first trace 613, the second trace 614, the third trace 623, and the fourth trace 624 may be metal plating.
In some examples, the trace layer 60 further includes a drive terminal 61, a sense terminal 62, a bias terminal 63, and a ground terminal 64; the driving terminal 61 includes a positive phase driving terminal 611 and a negative phase driving terminal 612, and the sensing terminal 62 includes a positive phase sensing terminal 621 and a negative phase sensing terminal 622; one of the first trace 613 and the second trace 614 is electrically connected to the positive phase drive terminal 611, and the other is electrically connected to the negative phase drive terminal 612; one of the third trace 623 and the fourth trace 624 is electrically connected to the positive phase sense terminal 621, and the other is electrically connected to the negative phase sense terminal 622; the fifth trace 631 is electrically connected to the bias terminal 63, and the ground terminal 64 is grounded. In some examples, the trace layer 60 is rounded rectangular in shape.
The wiring layer 60 in this example is provided with a first wiring 613 and a second wiring 614 corresponding to the drive terminal 61; the driving terminal 61 may include a negative phase driving terminal 612 and a positive phase driving terminal 611; the first trace 613 may connect all the first electrodes 40 of the ring resonators 100 in series to the positive driving terminal 611, and the positive driving voltage may be supplied to the first electrodes 40 through the positive driving terminal 611 and the first trace 613. The second trace 614 may connect all the second electrodes 41 in series to the negative phase driving terminal 612, and the negative phase driving voltage is supplied to the second electrodes 41 through the positive phase driving terminal 611 and the second trace 614.
The trace layer 60 in this example is provided with a third trace 623 and a fourth trace 624 corresponding to the sense terminal 62; the sense terminal 62 may include a negative sense terminal 622 and a positive sense terminal 621; the third trace 623 may connect all the third electrodes 50 of the ring resonators 100 in series to the positive sensing terminal 621, and the positive sensing voltage is supplied to the third electrodes 50 through the positive sensing terminal 621 and the third trace 623. The fourth wire 624 may connect all the fourth electrodes 51 of the ring resonator 100 in series to the negative phase sensing terminal 622, and the negative phase sensing voltage is supplied to the fourth electrodes 51 through the negative phase sensing terminal 622 and the fourth wire 624.
In the present embodiment, the first electrode 40 surrounds the ring resonator 100 and is disposed in a gap with the ring resonator 100 by using an annular array formed by a plurality of ring resonators 100, and when wiring is performed, the first wiring 613 corresponding to the first electrode 40 and the second wiring 614 corresponding to the second electrode 41 may be staggered with each other, so as to reduce the crossing of the wires in the wiring layer 60, thereby reducing the process difficulty of the resonator wiring design and improving the processing efficiency.
Optionally, in some examples, third electrode 50 is disposed within the annular array and disposed in gap with annular resonator 100 and fourth electrode 51 is disposed within annular resonator 100. When the third electrode 50 and the fourth electrode 51 are routed, the routing of the third electrode 50 and the fourth electrode 51 may be completely shifted.
The fifth wire 631 inputs a bias voltage to the anchor 31 through the bias terminal 63, and the dc bias voltage is supplied to the ring resonator 100 through the bias terminal 63 and the fifth wire 631. The ground terminal 64 is used to ground the remaining structure of the device (e.g., the housing, electrical shielding structure, top metal, etc.) and thereby avoid floating potentials. The fifth wire 631 is electrically connected to at least one anchor, and transmits bias voltage signals to the anchor, the connection beam, and the ring resonator via the fifth wire 631.
In some examples, sense terminal 62 and drive terminal 61 are located at two different top corner portions of trace layer 60, respectively.
In this example, by making the sensing terminal 62 close to the first vertex angle, the driving terminal 61 and the driving terminal 61 are respectively located at two different vertex angle positions of the routing layer 60, so that the distance between the driving terminal 61 and the sensing terminal 62 can be increased, on one hand, the feed-through capacitance in the CP test process can be reduced, and the CP test precision can be improved, and on the other hand, when the WLCSP packaging process is implemented, the layout of the ports can be facilitated, so as to realize stress balance.
With continued reference to the figures, in some examples, the ring-shaped harmonic oscillator 100 includes a first harmonic oscillator 10 and a second harmonic oscillator 20, the number of the first harmonic oscillators 10 is eight, the first harmonic oscillators 10 form a harmonic oscillator group in pairs, the two first harmonic oscillators 10 in each harmonic oscillator group are connected with each other through a connecting beam 30, and the harmonic oscillator groups are in a ring-shaped array with a first center 313 as a center; the number of the second harmonic oscillators 20 is four, the four second harmonic oscillators 20 are respectively connected with the adjacent first harmonic oscillators 10 through connecting beams 30, the distance between the second harmonic oscillator 20 and the first center 313 is smaller than the distance between the first harmonic oscillator 10 and the first center 313, and two adjacent connecting beams 30 are vertically arranged. The plurality of resonators in this example are combined to form a cross-shaped rectangular ring array structure, wherein four second resonators 20 are located in the middle of the cross shape, and eight second resonators 20 are in a group two by two form four tops of the cross shape respectively. Two ends of the connecting beam 30 are respectively connected with a harmonic oscillator, and two adjacent connecting beams 30 can be vertical to each other, so that the first harmonic oscillator 10 and the second harmonic oscillator 20 are connected to form a cross-shaped annular structure.
The first resonators 10 in this example are located at four ends of the cross, and may be circled with the geometric center of the cross as the first center 313, the first center 313 as the center, the connection lines of the first resonators 10 form an outer ring, and the connection lines of the four second resonators 20 form an inner ring. When the wiring is performed, a plurality of loop layer lead structures are formed from outside to inside, and the first wiring 613, the second wiring 614, the third wiring 623 and the fourth wiring 624 are sequentially formed from outside to inside. Because each lead wire can be staggered, the cross of the lead wires is reduced, the structure of the resonator can be simplified, and the processing difficulty of the resonator is reduced.
Referring to fig. 1 to 4, in some examples, a ring resonator 100 in the present example includes a first resonator 10 and a second resonator 20, the first resonator 10 is formed with a first ring cavity 11, a second electrode 41 is disposed in the first ring cavity 11 with a gap between the second electrode and an inner wall surface of the first ring cavity 11, and the other electrode is disposed outside the first resonator 10 with a gap between the second electrode and the first resonator 10.
The first resonator 10 has a cavity so that the first resonator 10 can form a first annular cavity 11. The first resonator 10 in the example of the present application may have a circular ring shape or a polygonal structure, for example, the cross section of the first resonator 10 may be triangular, quadrangular, or the like. The first annular cavity 11 is a cavity formed inside the first harmonic oscillator 10, and the shape of the first annular cavity 11 may or may not be consistent with the cross-sectional shape of the first harmonic oscillator 10.
In some examples, the second resonator 20 is formed with a second annular cavity 21, the fourth electrode 51 is disposed in the second annular cavity 21, the third electrode 50 is disposed outside the second resonator 20 with a gap from the second resonator 20, and the third electrode 50 is located within an annular array formed by the plurality of annular resonators 100.
The second resonator 20 has a cavity so that the second resonator 20 can form a second annular cavity 21. The second harmonic oscillator 20 in the present example may have a circular ring shape or a polygonal structure, for example, the cross section of the second harmonic oscillator 20 may have a triangle shape, a quadrilateral shape, or the like. The second annular cavity 21 is a cavity formed inside the second harmonic oscillator 20, and the shape of the second annular cavity 21 may or may not be consistent with the cross-sectional shape of the second harmonic oscillator 20. The second annular cavity 21 of the second resonator 20 in the example of the present application may or may not coincide with the shape and size of the first annular cavity 11 in the above example.
The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the present application.

Claims (9)

1.一种MEMS谐振器,其特征在于,包括层叠设置的器件层和走线层,其中,所述器件层包括环形谐振子、连接梁、锚固件、第一电极、第二电极、第三电极以及第四电极;所述环形谐振子被配置为多个并呈环形阵列排布,相邻的所述环形谐振子之间连接有所述连接梁,至少一所述连接梁与一位于多个环形谐振子的环形阵列内的所述锚固件固定连接;1. A MEMS resonator, characterized in that it comprises a stacked device layer and a routing layer, wherein the device layer comprises a ring resonator, a connecting beam, an anchor, a first electrode, a second electrode, a third electrode and a fourth electrode; the ring resonators are configured as a plurality and arranged in a ring array, the connecting beams are connected between adjacent ring resonators, and at least one of the connecting beams is fixedly connected to an anchor located in the ring array of the plurality of ring resonators; 所述第一电极将多个所述环形谐振子包围并与所述环形谐振子间隙设置;部分所述环形谐振子内设有与其间隙设置的所述第二电极,所述第一电极与所述第二电极被配置为一差分驱动结构;所述第三电极设于所述环形阵列内并与所述环形谐振子间隙设置;部分所述环形谐振子内设有与其间隙设置的所述第四电极,所述第三电极与所述第四电极被配置为另一差分驱动结构;The first electrode surrounds the plurality of the annular resonators and is disposed with a gap between the annular resonators; the second electrode is disposed with a gap between the annular resonators in some of the annular resonators, and the first electrode and the second electrode are configured as a differential drive structure; the third electrode is disposed in the annular array and is disposed with a gap between the annular resonators; the fourth electrode is disposed with a gap between the annular resonators in some of the annular resonators, and the third electrode and the fourth electrode are configured as another differential drive structure; 所述走线层包括串联起各个所述第一电极的第一走线、串联起各个所述第二电极的第二走线、串联起各个所述第三电极的第三走线以及串联起各个所述第四电极的第四走线以及与所述锚固件连接的第五走线;所述第一走线、第二走线、第三走线以及第四走线相互错位并由外向内间隔设置。The routing layer includes a first routing connecting each of the first electrodes in series, a second routing connecting each of the second electrodes in series, a third routing connecting each of the third electrodes in series, a fourth routing connecting each of the fourth electrodes in series, and a fifth routing connected to the anchor; the first routing, the second routing, the third routing, and the fourth routing are staggered with each other and spaced from the outside to the inside. 2.如权利要求1所述的MEMS谐振器,其特征在于,所述走线层还包括驱动端子、感应端子、偏置端子以及接地端子;所述驱动端子包括正相驱动端子和负相驱动端子,所述感应端子包括正相感应端子和负相感应端子;2. The MEMS resonator according to claim 1, characterized in that the routing layer further comprises a driving terminal, a sensing terminal, a bias terminal and a ground terminal; the driving terminal comprises a positive phase driving terminal and a negative phase driving terminal, and the sensing terminal comprises a positive phase sensing terminal and a negative phase sensing terminal; 所述第一走线和所述第二走线中的一者与所述正相驱动端子电信号连接,另一者与所述负相驱动端子电信号连接;所述第三走线和所述第四走线中的一者与所述正相感应端子电信号连接,另一者与所述负相感应端子电信号连接;所述第五走线与所述偏置端子电信号连接,所述接地端子用于接地。One of the first routing and the second routing is connected to the positive phase driving terminal electrical signal, and the other is connected to the negative phase driving terminal electrical signal; one of the third routing and the fourth routing is connected to the positive phase sensing terminal electrical signal, and the other is connected to the negative phase sensing terminal electrical signal; the fifth routing is connected to the bias terminal electrical signal, and the ground terminal is used for grounding. 3.如权利要求2所述的MEMS谐振器,其特征在于,所述感应端子和所述驱动端子分别位于所述走线层的两个不同顶角部位。3 . The MEMS resonator according to claim 2 , wherein the sensing terminal and the driving terminal are respectively located at two different vertex corners of the routing layer. 4.如权利要求1至3中的任一项所述的MEMS谐振器,其特征在于,所述环形谐振子的数量为十二个,每一所述连接梁的两端分别连接一所述环形谐振子,以使十二个所述环形谐振子和对应所述连接梁围合设置呈十字型呈环形阵列排布。4. The MEMS resonator according to any one of claims 1 to 3, characterized in that the number of the annular resonators is twelve, and each of the two ends of the connecting beam is respectively connected to a annular resonator, so that the twelve annular resonators and the corresponding connecting beams are arranged in a cross-shaped annular array. 5.如权利要求1至3中的任一项所述的MEMS谐振器,其特征在于,5. The MEMS resonator according to any one of claims 1 to 3, characterized in that: 所述第一电极和所述第二电极中的一者为正相驱动电极,另一者为负相驱动电极;One of the first electrode and the second electrode is a positive phase driving electrode, and the other is a negative phase driving electrode; 所述第三电极和所述第四电极中的一者为正相感应电极,另一者为负相感应电极。One of the third electrode and the fourth electrode is a positive phase sensing electrode, and the other is a negative phase sensing electrode. 6.如权利要求1至3中的任一项所述的MEMS谐振器,其特征在于,所述环形谐振子被配置为圆环形。6 . The MEMS resonator according to claim 1 , wherein the ring resonator is configured in a circular ring shape. 7.如权利要求1至3中的任一项所述的MEMS谐振器,其特征在于,所述连接梁被配置为弹性直梁。7 . The MEMS resonator according to claim 1 , wherein the connecting beam is configured as an elastic straight beam. 8.如权利要求1至3中的任一项所述的MEMS谐振器,其特征在于,所述锚固件呈十字状,所述锚固件的至少一个十字状端部连接所述连接梁。8 . The MEMS resonator according to claim 1 , wherein the anchor is cross-shaped, and at least one cross-shaped end of the anchor is connected to the connecting beam. 9.如权利要求1至3中的任一项所述的MEMS谐振器,其特征在于,所述走线层呈圆角矩形状。9 . The MEMS resonator according to claim 1 , wherein the wiring layer is in a rounded rectangular shape.
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