CN221263779U - Radio frequency module packaging structure - Google Patents

Abstract

The utility model provides a radio frequency module packaging structure, which is characterized in that a groove is arranged in a rewiring layer, a filter chip is bonded on the groove of the rewiring layer based on a virtual metal wiring layer and a virtual metal connecting piece to form a closed cavity, the packaging size can be reduced, the preparation process is simple, the manufacturing process cost is low, furthermore, the virtual metal wiring layer can be prepared while the metal wiring layer is prepared, and the virtual metal connecting piece can be prepared while the metal connecting piece is prepared, so that the groove can be closed to form the closed cavity under the condition that other materials and process steps are not additionally introduced, and the cost is further reduced.

Description

Radio frequency module packaging structure

Technical Field

The utility model belongs to the technical field of semiconductor manufacturing, and relates to a radio frequency module packaging structure.

Background

The rapid development of electronic products is a main driving force for the evolution of the packaging technology nowadays, and miniaturization, high density, high frequency, high speed, high reliability and low cost are main stream development directions of advanced packaging. Among them, system in package (SYSTEM IN A PACKAGE, SIP) is one of the most important and potentially most promising technologies for such high density system integration.

SIP packaging refers to integrating multiple functional chips, such as a processor, a memory, and other functional chips, into one packaging structure according to application scenarios, the number of layers of packaging substrates, and other factors, so that complete functions are realized through the one packaging structure. Therefore, the package of the radio frequency device can adopt the SIP package technology to integrate a filter, a switch, an amplifier, a capacitor, an inductor and the like into the same package structure, so as to prepare the radio frequency module package structure, reduce the package size and improve the package integration degree.

At present, in the radio frequency module packaging structure, for the preparation of the filter chip packaging body, a cavity is formed on the surface of a filter wafer through the preparation of the patterned insulating layer twice, then a metal interconnection piece is prepared on the surface of the filter wafer and the outer side of the cavity, and then cutting is performed to prepare the filter chip packaging body, and then the filter chip packaging body is integrated with other functional chips to prepare the radio frequency module packaging structure. However, when the filter chip is manufactured, the volume of the radio frequency module package structure is increased due to the patterned insulating layer, and the packaging cost is increased due to the additional insulating layer.

Therefore, it is necessary to provide a radio frequency module packaging structure.

Disclosure of utility model

In view of the above-mentioned drawbacks of the prior art, an objective of the present utility model is to provide a radio frequency module package structure for solving the problems of large volume and high cost of the radio frequency module package structure in the prior art.

To achieve the above and other related objects, the present utility model provides a radio frequency module packaging structure, including:

The rewiring layer comprises a first surface and a second surface which are oppositely arranged, the rewiring layer comprises a dielectric layer, a metal wiring layer and a virtual metal wiring layer, and a groove is formed in the dielectric layer;

The filter chip is bonded on the first surface of the rewiring layer, a metal connecting piece and a virtual metal connecting piece are arranged on the surface of the filter chip, the metal connecting piece is electrically connected with the filter chip and the metal wiring layer, and the virtual metal connecting piece is bonded with the virtual metal wiring layer and forms a closed cavity between the rewiring layer and the filter chip in combination with the groove;

The packaging layer is positioned on the first surface of the rewiring layer and is used for coating the filter chip, the metal wiring layer, the virtual metal wiring layer, the metal connecting piece and the virtual metal connecting piece;

and the metal bump is positioned on the second surface of the rewiring layer and is electrically connected with the metal wiring layer.

Optionally, the dummy metal wiring layer is located on the first face of the rewiring layer and extends outward from an opening edge of the groove.

Optionally, the dummy metal wiring layer and the metal wiring layer have the same material and are prepared based on the same step.

Optionally, the metal wiring layer comprises one or a combination of a copper layer, an aluminum layer, a nickel layer, a gold layer and a silver layer; the virtual metal wiring layer comprises one or a combination of a copper layer, an aluminum layer, a nickel layer, a gold layer and a silver layer.

Optionally, the metal connectors and the dummy metal connectors are of the same material and are prepared based on the same step.

Optionally, the metal connector comprises a solder ball bump; the virtual metal connector comprises a solder ball bump; the solder ball bump comprises a Sn solder ball bump, a SnPb solder ball bump or a SnAg solder ball bump.

Optionally, the cross-sectional profile of the closed cavity comprises one or a combination of a circle, an ellipse, and a polygon.

Optionally, the circuit further comprises a functional chip electrically connected with the rewiring layer, wherein the functional chip comprises one or a combination of a switch chip, an amplifier chip, a capacitor and an inductor.

Optionally, the functional chip is located on a first side of the rewiring layer and/or the functional chip is located on a second side of the rewiring layer.

Optionally, the rf module package structure includes a wafer level rf module package structure.

As described above, in the radio frequency module packaging structure, the groove is arranged in the rewiring layer, the filter chip is bonded on the groove of the rewiring layer based on the virtual metal wiring layer and the virtual metal connecting piece to form the closed cavity, so that the packaging size can be reduced, the preparation process is simple, the manufacturing process cost is low, furthermore, the virtual metal wiring layer can be prepared while the metal wiring layer is prepared, and the virtual metal connecting piece can be prepared while the metal connecting piece is prepared, so that the closed cavity is formed by sealing the groove under the condition that other materials and process steps are not additionally introduced, and the cost is further reduced.

Drawings

Fig. 1 is a process flow diagram of preparing a package structure of a radio frequency module according to an embodiment of the utility model.

Fig. 2 is a schematic view showing a structure of a support substrate according to an embodiment of the present utility model.

Fig. 3 is a schematic diagram of a structure after forming a rewiring layer according to an embodiment of the utility model.

Fig. 4 is a schematic top view of the area a in fig. 3.

Fig. 5 is a schematic structural diagram of a bonded chip according to an embodiment of the utility model.

Fig. 6 is a schematic top view of the area B in fig. 5.

Fig. 7 is a schematic diagram of a structure after forming a package layer and removing a support substrate segment according to an embodiment of the utility model.

Fig. 8 is a schematic structural view of the metal bump according to the embodiment of the utility model.

Description of the reference numerals

100. Support substrate

200. Separating layer

301. Dielectric layer

302. Metal wiring layer

303. Virtual metal wiring layer

304. Groove

401. Filter chip

402. Switch chip

403. Amplifier chip

404. Capacitance device

501. Metal connecting piece

502. Virtual metal connector

600. Closed cavity

700. Encapsulation layer

800. Metal bump

Detailed Description

Other advantages and effects of the present utility model will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present utility model with reference to specific examples. The utility model may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present utility model.

As described in detail in the embodiments of the present utility model, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present utility model. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures, including embodiments in which the first and second features are formed in direct contact, as well as embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact, and further, when a layer is referred to as being "between" two layers, it may be the only layer between the two layers, or there may be one or more intervening layers.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present utility model by way of illustration, and only the components related to the present utility model are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be changed at will, and the layout of the components may be more complex.

As shown in fig. 8, the embodiment provides a radio frequency module packaging structure, which includes a re-wiring layer, a filter chip 401, a packaging layer 700 and a metal bump 800, wherein the re-wiring layer includes a first surface and a second surface that are disposed opposite to each other, the re-wiring layer includes a dielectric layer 301, a metal wiring layer 302 and a virtual metal wiring layer 303, and a groove 304 is disposed in the dielectric layer 301; the filter chip 401 is bonded on the first surface of the rewiring layer, a metal connector 501 and a virtual metal connector 502 are arranged on the surface of the filter chip 401, the metal connector 501 is electrically connected with the filter chip 401 and is electrically connected with the metal wiring layer 302, and the virtual metal connector 502 is bonded with the virtual metal wiring layer 303 and forms a closed cavity 600 between the rewiring layer and the filter chip 401 in combination with the groove 304; the encapsulation layer 700 is located on the first surface of the rewiring layer, and the encapsulation layer 700 encapsulates the filter chip 401, the metal wiring layer 302, the virtual metal wiring layer 303, the metal connection 501 and the virtual metal connection 502; the metal bump 800 is located on the second side of the re-routing layer and is electrically connected to the metal routing layer 302.

In the radio frequency module package structure of this embodiment, the groove 304 is disposed in the rewiring layer, and the filter chip 401 is bonded on the groove 304 of the rewiring layer based on the virtual metal wiring layer 303 and the virtual metal connector 502 to form the closed cavity 600, so that the package size can be reduced, the preparation process is simple, the manufacturing cost is low, further, the virtual metal wiring layer 303 can be prepared while the metal wiring layer 302 is prepared, and the virtual metal connector 502 can be prepared while the metal connector 501 is prepared, so that the groove 304 can be closed to form the closed cavity 600 without introducing other materials and process steps additionally, so as to further reduce the cost.

Referring to fig. 1, a process for preparing the rf module package structure is illustrated, but the preparation of the rf module package structure is not limited thereto.

The following describes the structure and preparation of the radio frequency module packaging structure with reference to fig. 1 to 8 of the specification.

First, referring to fig. 1 and 2, step S1 is performed to provide a support substrate 100.

Specifically, the support substrate 100 may include, for example, a glass substrate, a metal substrate, a semiconductor substrate, etc., to provide support for a subsequent process through the support substrate 100, and the size of the support substrate 100 is not limited herein, but is preferably at a wafer level.

In this embodiment, a separation layer 200 is preferably formed on the surface of the support substrate 100 in order to facilitate subsequent removal of the support substrate 100, where the separation layer 200 includes, but is not limited to, an adhesive tape and a polymer layer, and a photothermal conversion layer may be selected for the separation layer 200, so that subsequent heating of the separation layer 200, such as laser, may be used to separate the support substrate 100, thereby improving the operation convenience.

Next, referring to fig. 1 and 3, step S2 is performed to form a re-wiring layer on the support substrate 100, where the re-wiring layer includes a first surface and a second surface that are disposed opposite to each other, the re-wiring layer includes a dielectric layer 301, a metal wiring layer 302, and a dummy metal wiring layer 303, and a groove 304 is disposed in the dielectric layer 301.

Specifically, the dimensions of the groove 304 may be selected according to the needs, and are not limited herein, and the method of forming the groove 304 may include, but is not limited to, mechanical grooving, laser grooving, etc., and may be specifically selected according to the needs.

As an example, the dummy metal wiring layer 303 is located on the first surface of the re-wiring layer and preferably extends outward from the opening edge of the recess 304 to minimize the space occupied when the filter chip 401 is bonded to form the closed cavity 600, so as to reduce the package size as much as possible.

As an example, the dummy metal wiring layer 303 and the metal wiring layer 302 are preferably made of the same material and based on the same step, so as to reduce the number of process steps, and the dummy metal wiring layer 303 can be made while the metal wiring layer 302 is being made, so that the introduction of other materials can be avoided, and thus the cost can be further reduced.

Specifically, as shown in fig. 3 and 4, in the present embodiment, the dummy metal wiring layer 303 and the metal wiring layer 302 are prepared simultaneously, except that the metal wiring layer 302 is used for electrical connection, and the dummy metal wiring layer 303 is not used for electrical connection, but is used as a surrounding ring of the groove 304, so as to form the closed cavity 600 later.

Wherein the cross-sectional profile of the dummy metal wiring layer 303 may include one or a combination of a circle, an ellipse, and a polygon, which is not limited herein, so that the closed cavity 600 having the cross-sectional profile including one or a combination of a circle, an ellipse, and a polygon may be subsequently prepared.

As an example, the metal wiring layer 302 may include one or a combination of a copper layer, an aluminum layer, a nickel layer, a gold layer, and a silver layer; the dummy metal wiring layer 303 may include one or a combination of a copper layer, an aluminum layer, a nickel layer, a gold layer, and a silver layer.

The specific materials and layer numbers of the metal wiring layer 302, the dummy metal wiring layer 303, and the dielectric layer 301 in the re-wiring layer are not limited herein.

In the preparation of the grooves 304, the dielectric layer 301 may be prepared after patterning after forming the dummy metal wiring layer 303 or before forming the dummy metal wiring layer 303, for example, mechanical grooving, laser grooving, etc., which may be specifically selected according to the need without limitation.

Next, referring to fig. 1, 5 and 6, step S3 is performed to bond a chip on the first surface of the rewiring layer.

Specifically, the chip includes the filter chip 401, and further includes other functional chips except the filter chip 401, so as to meet the functional requirements of the package structure. The functional chip may include, for example, one or a combination of a switch chip 402, an amplifier chip 403 such as a power amplifier and a low noise amplifier, a capacitor 404, and an inductor, etc., which are not limited herein.

In this embodiment, the chips are bonded to the first surface of the rewiring layer, but the chips are not limited thereto, and other functional chips except the filter chip 401 may be bonded to the second surface of the rewiring layer, or partially bonded to the first surface of the rewiring layer and partially bonded to the second surface of the rewiring layer, as needed, without being limited thereto.

The surface of the filter chip 401 is provided with the metal connection piece 501 electrically connected with the filter chip 401 and electrically connected with the metal wiring layer 302 to realize electrical transmission, meanwhile, the surface of the filter chip 401 is also provided with the virtual metal connection piece 502 which is not electrically transmitted, and the virtual metal connection piece 502 is used for bonding the virtual metal wiring layer 303 to serve as a surrounding ring of the groove 304, so that the closed cavity 600 can be formed between the re-wiring layer and the filter chip 401 by combining the virtual metal connection piece 502 and the virtual metal wiring layer 303.

As an example, the metal connector 501 and the dummy metal connector 502 are preferably made of the same material and based on the same step, so as to reduce the number of process steps, and the dummy metal connector 502 can be made while the metal connector 501 is made, so that the introduction of other materials can be avoided, and the cost can be further reduced.

Wherein, the metal connection 501 and the dummy metal connection 502 may be solder ball bumps; the solder bump may include, for example, a Sn solder bump, a SnPb solder bump, or a SnAg solder bump, and the material, size, and morphology of the metal connector 501 and the dummy metal connector 502 are not limited herein.

Next, as shown in fig. 1 and 7, step S4 is performed to form the encapsulation layer 700, and step S5 is performed to remove the support substrate 100.

Specifically, the method for forming the encapsulation layer 700 may include, but is not limited to, compression molding, transfer molding, and spin coating, and the material of the encapsulation layer 700 may include, but is not limited to, epoxy and polyamide, and the material and preparation method of the encapsulation layer 700 are not limited thereto. After the support substrate 100 is removed, the metal connection 501 in the rewiring layer may be exposed for subsequent electrical connection.

Next, as shown in fig. 1 and 8, step S6 is performed to form a metal bump 800 on the second surface of the rewiring layer.

Specifically, the metal bump 800 electrically connected to the rewiring layer may be used to electrically connect to the outside. The metal bump 800 may include, for example, a solder bump, a C4 metal bump, a copper pillar bump, etc., and the specific type and material of the metal bump 800 are not limited herein.

As an example, the rf module package structure may include a wafer level rf module package structure, and after dicing, a single rf module package structure as shown in fig. 8 may be formed to improve production efficiency.

In summary, in the radio frequency module packaging structure of the present utility model, the groove is formed in the rewiring layer, and the filter chip is bonded on the groove of the rewiring layer based on the virtual metal wiring layer and the virtual metal connection piece to form the closed cavity, so that the packaging size can be reduced, the preparation process is simple, the manufacturing cost is low, further, the virtual metal wiring layer can be prepared while the metal wiring layer is prepared, and the virtual metal connection piece can be prepared while the metal connection piece is prepared, so that the closed cavity is formed by sealing the groove without introducing other materials and process steps, and the cost is further reduced.

The above embodiments are merely illustrative of the principles of the present utility model and its effectiveness, and are not intended to limit the utility model. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the utility model. Accordingly, it is intended that all equivalent modifications and variations of the utility model be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. The utility model provides a radio frequency module packaging structure which characterized in that, radio frequency module packaging structure includes:

The rewiring layer comprises a first surface and a second surface which are oppositely arranged, the rewiring layer comprises a dielectric layer, a metal wiring layer and a virtual metal wiring layer, and a groove is formed in the dielectric layer;

The filter chip is bonded on the first surface of the rewiring layer, a metal connecting piece and a virtual metal connecting piece are arranged on the surface of the filter chip, the metal connecting piece is electrically connected with the filter chip and the metal wiring layer, and the virtual metal connecting piece is bonded with the virtual metal wiring layer and forms a closed cavity between the rewiring layer and the filter chip in combination with the groove;

The packaging layer is positioned on the first surface of the rewiring layer and is used for coating the filter chip, the metal wiring layer, the virtual metal wiring layer, the metal connecting piece and the virtual metal connecting piece;

and the metal bump is positioned on the second surface of the rewiring layer and is electrically connected with the metal wiring layer.

2. The radio frequency module package structure according to claim 1, wherein: the dummy metal wiring layer is located on the first face of the rewiring layer and extends outwards from the opening edge of the groove.

3. The radio frequency module package structure according to claim 1, wherein: the virtual metal wiring layer and the metal wiring layer are made of the same material and are prepared based on the same step.

4. The radio frequency module package structure according to claim 1, wherein: the metal wiring layer comprises one or a combination of a copper layer, an aluminum layer, a nickel layer, a gold layer and a silver layer; the virtual metal wiring layer comprises one or a combination of a copper layer, an aluminum layer, a nickel layer, a gold layer and a silver layer.

5. The radio frequency module package structure according to claim 1, wherein: the metal connecting pieces and the virtual metal connecting pieces are made of the same material and are prepared based on the same step.

6. The radio frequency module package structure according to claim 1, wherein: the metal connector comprises a solder ball bump; the virtual metal connector comprises a solder ball bump; the solder ball bump comprises a Sn solder ball bump, a SnPb solder ball bump or a SnAg solder ball bump.

7. The radio frequency module package structure according to claim 1, wherein: the cross-sectional profile of the closed cavity comprises one or a combination of a circle, an ellipse, and a polygon.

8. The radio frequency module package structure according to claim 1, wherein: the circuit further comprises a functional chip electrically connected with the rewiring layer, wherein the functional chip comprises one or a combination of a switch chip, an amplifier chip, a capacitor and an inductor.

9. The radio frequency module package structure of claim 8, wherein: the functional chip is located on a first side of the rewiring layer and/or the functional chip is located on a second side of the rewiring layer.

10. The radio frequency module package structure according to claim 1, wherein: the radio frequency module packaging structure comprises a wafer-level radio frequency module packaging structure.