CN221102058U - A gallium nitride power module - Google Patents

Abstract

The utility model relates to a gallium nitride power module, which comprises a power component, a shell component and a bottom plate; the power component comprises a gallium nitride chip and a circuit substrate for mounting the gallium nitride chip; the shell component comprises a partition and at least three integrated areas, the integrated areas are arranged along a first direction, and the partition is arranged between adjacent integrated areas; the bottom plate is spliced with the shell component, and the first surface of the bottom plate is used to seal one side of the integrated area to form a plurality of accommodating cavities, and the accommodating cavities are used to accommodate a group of the power components; the utility model improves the device integration through module normalization design, and can meet the power requirements of 1200W/800A and higher. At the same time, compared with several combined gallium nitride modules in the prior art, the gallium nitride power module is smaller in size and volume, occupies less space, is conducive to circuit board layout and design, can reduce electrical loss and parasitic parameter influence, and has better heat dissipation effect.

Description

A gallium nitride power module

Technical Field

The utility model relates to the technical field of power semiconductor devices, in particular to a gallium nitride power module.

Background technique

As a wide bandgap semiconductor material, GaN has the advantages of large bandgap width, high breakdown voltage, high thermal conductivity, high switching frequency and strong radiation resistance. Its higher switching frequency enables the application circuit to use smaller passive devices, and the higher breakdown voltage means that GaN materials have higher voltage tolerance than traditional silicon materials, without affecting the on-resistance performance and can reduce conduction losses. Therefore, GaN materials are widely used as materials with great development prospects and have become a key component for lightweight electronic products.

Currently, in order to meet high power requirements, multiple GaN modules are usually combined, resulting in a larger size and taking up more space. The corresponding circuit layout needs to be replanned, which is inconvenient during installation and integration and requires additional development time and cost.

Utility Model Content

To this end, the technical problem to be solved by the present invention is to overcome the technical difficulties of low integration and limited power density of standard packaged devices in the prior art, and to provide a gallium nitride power module that meets the requirements of high integration and high power through modular design.

In order to solve the above technical problems, the utility model provides a gallium nitride power module, which includes:

A power component, comprising a gallium nitride chip and a circuit substrate for mounting the gallium nitride chip;

A shell assembly, the shell assembly comprising a partition and at least three integrated areas, the integrated areas are arranged along a first direction, and the partition is provided between adjacent integrated areas;

A bottom plate is spliced with the shell component, and a first surface of the bottom plate is used to seal one side of the integrated area to form a plurality of accommodating cavities, and the accommodating cavities are used to accommodate a group of the power components.

In an embodiment of the present invention, the plurality of accommodating chambers include a first accommodating chamber, a second accommodating chamber and a third accommodating chamber arranged along the first direction.

In an embodiment of the present invention, the housing assembly further includes connecting terminals, and the connecting terminals are respectively located at two ends of the accommodating cavity along a second direction, and the second direction is perpendicular to the first direction.

In one embodiment of the present invention, a cooling device is further included, wherein the cooling device is closely attached to the second surface of the bottom plate, and the second surface is arranged opposite to the first surface in the thickness direction of the bottom plate.

In an embodiment of the present invention, the bottom plate further includes fins, the fins protrude from the second surface and are in close contact with the cooling device, and the fins are made of metal.

In one embodiment of the utility model, the power component further includes a first welding layer and a second welding layer; the first welding layer is located on one side surface of the circuit substrate and is used to fix the gallium nitride chip, and the second welding layer is located on at least a portion of the first surface and is used to fix the circuit substrate.

In an embodiment of the present invention, the circuit substrate is made of gallium nitride.

In an embodiment of the present invention, the gallium nitride chips in the accommodating cavity are connected via bonding wires.

In an embodiment of the present invention, the bonding wire is configured as a copper wire.

In an embodiment of the present invention, the bottom plate and the shell assembly are bonded together by glue dispensing.

The above technical solution of the utility model has the following advantages compared with the prior art:

The gallium nitride power module described in the utility model improves the device integration through the module normalization design, and can meet the power requirements of 1200W/800A and higher. At the same time, compared with the total size and volume of a combination of several gallium nitride modules in the prior art, the gallium nitride power module has a smaller total size and volume, occupies less space, is conducive to circuit board layout and design, can reduce electrical loss and parasitic parameter influence, and has better heat dissipation effect.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to make the content of the utility model easier to understand, the utility model is further described in detail according to the specific embodiments of the utility model in combination with the accompanying drawings, wherein:

FIG1 is an exploded view of a gallium nitride power module in a preferred embodiment of the present invention;

FIG2 is a top view of a gallium nitride power module in a preferred embodiment of the present invention;

FIG. 3 is a side view of a gallium nitride power module in a preferred embodiment of the present invention.

Explanation of the reference numerals in the specification: 1. Power component; 11. Gallium nitride chip; 12. Circuit substrate; 13. First welding layer; 14. Second welding layer; 2. Shell assembly; 21. Integration area; 22. Partition; 3. Bottom plate; 31. First surface; 32. Second surface; 41. First accommodating cavity; 42. Second accommodating cavity; 43. Third accommodating cavity; 5. Connection terminal; 6. Fin.

Detailed ways

The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

Example

1 to 3 , the utility model provides a gallium nitride power module, which includes a power component 1, a housing component 2, a base plate 3 and a cooling device. The utility model normalizes the gallium nitride module design, improves the integration, realizes a single module design, makes the gallium nitride module meet high power requirements within a limited occupied space, and saves subsequent development and design costs.

Specifically, the inventors of this case have discovered through research that in the prior art, in order to achieve the power requirement of 1200W/600A, it is necessary to combine multiple gallium nitride modules. The overall volume is large and faces electrical challenges such as power loss and parasitic parameters during packaging. The installation and integration are difficult. Therefore, referring to Figure 1, in a preferred embodiment of the utility model, the shell assembly 2 includes a partition 22 and at least three integrated areas 21, each of the integrated areas 21 is provided with the power component 1, and the arranged integrated areas 21 replace the discrete gallium nitride modules to improve the integration; the integrated areas 21 are arranged along a first direction, and the partitions 22 are provided between adjacent integrated areas 21.

Further, as shown in FIG. 1 , the housing assembly 2 further includes connecting terminals 5 , which are respectively located at two ends of the accommodating cavity along a second direction, wherein the second direction is perpendicular to the first direction, and the connecting terminals 5 are used to introduce the working current into the gallium nitride power module.

Specifically, as shown in FIG. 1 , the bottom plate 3 is used to be spliced with the shell, and the first surface 31 in the thickness direction of the bottom plate 3 is arranged opposite to the shell component 2. In the preferred embodiment of the utility model, the shell component 2 is bonded to the bottom plate 3 by dispensing, and the first surface 31 is connected to the open side of the integrated area 21 to form a closed accommodating cavity for accommodating the power component 1. Further, in some embodiments, as shown in FIG. 2 , the plurality of accommodating cavities include a first accommodating cavity 41, a second accommodating cavity 42 and a third accommodating cavity 43 arranged along the first direction, and the single module design can meet the 1200W/800A power requirement; in some embodiments, the accommodating cavities are arranged along the first direction, and the number of accommodating cavities is not limited thereto; the gallium nitride power module can meet higher power requirements and has a smaller size in the first direction than the existing discrete design; the size of the gallium nitride power module in the first direction in the preferred embodiment of the utility model is reduced by about 7% compared with the size of the multiple combined gallium nitride modules in the first direction in the prior art, and the utility model can optimize the occupied space of the module.

Specifically, as shown in FIG. 1 , the power component 1 includes a gallium nitride chip 11 and a circuit substrate 12 for mounting the gallium nitride chip 11, i.e., a DCB board; the power component 1 also includes a first welding layer 13 and a second welding layer 14; the first welding layer 13 is located on one side surface of the circuit substrate 12 and is used to fix the gallium nitride chip 11, and the second welding layer 14 is located on at least a part of the first surface 31 and is used to fix the circuit substrate 12. With the development of packaging technology, the wiring spacing is getting smaller and smaller, and the gallium nitride chip 11 in the accommodating cavity is connected by bonding wires. In some embodiments, the bonding wire is set as a copper wire, which has good shear strength and elongation compared to the gold wire of the same purity. Under the condition of meeting the same welding strength, a copper wire with a smaller diameter can be used instead of a gold wire as a bonding wire to reduce the spacing of the wire bonding. At the same time, the copper material has low cost, high hardness, and high strength, which is conducive to protecting the curvature of the lead during plastic encapsulation molding.

Furthermore, in some embodiments, the circuit substrate 12 is configured to be made of gallium nitride material, which has higher hardness, better mechanical and electrical properties, better heat dissipation performance, and longer service life than the DCB board made of aluminum oxide in the prior art.

Specifically, the gallium nitride power module further includes a cooling device, which is in close contact with the second surface 32 of the base plate 3, and the second surface 32 is arranged opposite to the first surface 31 in the thickness direction of the base plate 3. Further, as shown in FIG3 , in a preferred embodiment of the utility model, the base plate 3 is configured as a pin-fin base plate, which includes a plurality of fins 6, which are integrally formed with the base plate body, and the fins 6 are raised from the second surface 32 and in close contact with the cooling device, thereby increasing the heat exchange area and improving the heat dissipation effect; the fins 6 are configured as metal material with good thermal conductivity. In a preferred embodiment of the utility model, the cooling device is configured for water cooling.

The method for preparing a gallium nitride power module described in the utility model comprises the following steps:

Step 1, planning the patch position on the first surface 31 of the circuit substrate 12 and printing solder paste;

Step 2, placing the gallium nitride chip 11 at the solder paste printing position for chip mounting;

Step 3, forming a first soldering layer 13 by reflow soldering to connect the gallium nitride chip 11 and the circuit substrate 12;

Step 4, bonding the gallium nitride chips 11 to each other using copper wires;

Step 5, forming a second soldering layer 14 by reflow soldering to connect the circuit substrate 12 and the bottom plate 3;

Step 6, bonding the bottom plate 3 and the shell assembly 2 by glue dispensing;

Step 7: squeeze epoxy resin into the mold cavity to embed the gallium nitride power module, and then cross-link and cure in the mold cavity to form a plastic package.

Obviously, the above embodiments are merely examples for the purpose of clear explanation and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention of the utility model.

Claims (10)

1. A gallium nitride power module, characterized by comprising,

A power module including a gallium nitride chip and a circuit substrate for mounting the gallium nitride chip;

The shell assembly comprises a partition plate and at least three integrated areas, wherein the integrated areas are arranged along a first direction, and the partition plate is arranged between every two adjacent integrated areas;

The base plate is spliced with the shell component, the first surface of the base plate is used for sealing one side of the integration zone to form a plurality of accommodating cavities, and the accommodating cavities are used for accommodating a group of power components.

2. A gallium nitride power module according to claim 1, wherein: the plurality of accommodating cavities comprise a first accommodating cavity, a second accommodating cavity and a third accommodating cavity which are arranged along the first direction.

3. Gallium nitride power module according to claim 1 or 2, characterized in that: the shell assembly further comprises connecting terminals, the connecting terminals are respectively located at two ends of the accommodating cavity along a second direction, and the second direction is perpendicular to the first direction.

4. A gallium nitride power module according to claim 1, wherein: the cooling device is closely attached to the second surface of the bottom plate, and the second surface is opposite to the first surface in the thickness direction of the bottom plate.

5. The gallium nitride power module according to claim 4, wherein: the bottom plate also comprises fins, the fins are raised from the second surface and cling to the cooling device, and the fins are made of metal materials.

6. A gallium nitride power module according to claim 1, wherein: the power assembly further includes a first weld layer and a second weld layer; the first welding layer is positioned on one side surface of the circuit substrate and used for fixing the gallium nitride chip, and the second welding layer is positioned on at least part of the area of the first surface and used for fixing the circuit substrate.

7. Gallium nitride power module according to claim 1 or 6, characterized in that: the circuit substrate is made of gallium nitride material.

8. A gallium nitride power module according to claim 1, wherein: the gallium nitride chips in the accommodating cavity are connected through bonding wires.

9. The gallium nitride power module of claim 8, wherein: the bonding wire is arranged as a copper wire.

10. A gallium nitride power module according to claim 1, wherein: the bottom plate is adhered to the shell assembly in a dispensing mode.