CN220569701U - Semiconductor element and semiconductor assembly - Google Patents

Abstract

The utility model discloses a semiconductor element, which includes an epitaxial structure having a first epitaxial stack, a contact part, an insulating part and a first electrode. The first epitaxial stack has a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and a first active region located between the first semiconductor structure and the second semiconductor structure. The contact contacts the first semiconductor structure and has an opening of a first width. The insulating portion contacts the contact portion and has a first aperture of a second width. The first electrode is located on the second semiconductor structure and includes an electrode pad and an extended electrode. Wherein, the opening, the first pore and the electrode pad overlap in a vertical direction, the contact portion and the extended electrode overlap in a vertical direction, and the first width is different from the second width.

Description

Semiconductor components and semiconductor components

This application is a divisional application of the Chinese utility model application (Application Number: 202123062555.3, Application Date: December 08, 2021, Utility Model Name: Semiconductor Component).

Technical field

The utility model relates to semiconductor components, in particular to semiconductor light-emitting components, such as light-emitting diodes.

Background technique

Semiconductor components are used in a wide range of applications, and research and development on related materials continues. For example, III-V semiconductor materials containing Group III and Group V elements can be used in various optoelectronic semiconductor devices such as light emitting diodes (LEDs), laser diodes (LD), photodetectors or Solar cells (Solarcells), or power components such as switches or rectifiers, can be used in lighting, medical, display, communication, sensing, power supply systems and other fields. As one of the semiconductor light-emitting elements, light-emitting diodes have the advantages of low power consumption and long life, so they are widely used.

Utility model content

The purpose of this utility model is to provide a semiconductor element to solve the problems existing in the prior art.

The utility model provides a semiconductor element, including: an epitaxial structure, including a first epitaxial stack. The first epitaxial stack includes a first semiconductor structure, a second semiconductor structure, and an epitaxial structure located between the first semiconductor structure and the second semiconductor structure. The first active region between the second semiconductor structure and the first semiconductor structure has different conductivity types; a plurality of contact portions located under the first semiconductor structure and contacting the first semiconductor structure; a plurality of insulators The first electrode is located under the contact portion and in contact with the contact portion; the first electrode is located on the second semiconductor structure and includes an electrode pad and an extended electrode; wherein the contact portion, the insulating portion and the electrode pad are mutually connected in a vertical direction. Misaligned, the contact portion and the extended electrode overlap in the vertical direction.

In a cross-sectional view, the semiconductor element further includes a first aperture located between two adjacent contact portions, and a second aperture located between two adjacent insulating portions, the first aperture and the plurality of adjacent insulating portions. The second pore overlaps the electrode pad in the vertical direction.

In a horizontal direction, the width of the first pore and the width of the second pore are greater than the width of the electrode pad.

The thickness of the contact part is smaller than the thickness of the insulation part.

The width of the first pore is smaller than the width of the second pore in a horizontal direction.

The first semiconductor structure has a first surface facing the first active region and a second surface contacting the contact portion, and the width of the first surface is smaller than the width of the second surface.

The semiconductor element also includes a conductive layer located under the insulating part, the conductive layer contacts the insulating part and fills the first pore and the second pore.

The conductive layer fills the contact portion.

The conductive layer connects to the first semiconductor structure.

The second hole and the plurality of contact portions overlap in the vertical direction.

The light emitted by the semiconductor element is infrared light.

The peak wavelength of the luminescence wavelength of the first active region ranges from 730 nm to 1100 nm.

The epitaxial structure further includes a second epitaxial stack located on the first epitaxial stack, the second epitaxial stack having a third semiconductor structure, a fourth semiconductor structure and a second active region located on the third semiconductor structure and the fourth Among the semiconductor structures, the third semiconductor structure and the fourth semiconductor structure have different conductive types.

The semiconductor device further includes an intermediate layer located between the first epitaxial stack and the second epitaxial stack, the intermediate layer including a pn junction.

Both the first active area and the second active area emit infrared light with a peak wavelength of 730 nm to 1100 nm.

The first semiconductor structure is p-type, and the second semiconductor structure is n-type.

The semiconductor device also includes a bonding structure and a substrate, the bonding structure being between the first epitaxial stack and the substrate.

The semiconductor device also includes a reflective layer located between the first epitaxial stack and the bonding structure.

The semiconductor element further includes a second electrode connected to a side of the substrate away from the first semiconductor structure.

The utility model also provides a semiconductor component, which includes: a packaging substrate; the semiconductor component is located on the packaging substrate; and a packaging layer covers the semiconductor component.

The advantage of this utility model is that through the design of semiconductor components, it has better optoelectronic performance, such as increased luminous intensity, reduced forward voltage (Vf), etc., and can be used in lighting, medical, display, Products in the fields of communications, sensing, power systems, etc., such as lamps, monitors, mobile phones, tablet computers, vehicle dashboards, TVs, computers, wearable devices (such as watches, bracelets, necklaces, etc.), traffic signals, outdoor Monitors, medical equipment, etc.

Description of drawings

Figure 1 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention;

Figure 2 is a schematic diagram of the epitaxial structure of a semiconductor element according to another embodiment of the present invention;

Figure 3 is a schematic cross-sectional structural diagram of a semiconductor component according to an embodiment of the present invention;

Figure 4 is a partial cross-sectional structural diagram of a sensing module according to an embodiment of the present invention.

Symbol Description

100 semiconductor components

1 First epitaxial stack

11 First Semiconductor Structure

111 Contact Department

12 Second semiconductor structure

13 First active zone

131 first well layer

132 First barrier layer

133 Second well layer

134 Second barrier layer

135 Third well layer

136 Third barrier layer

14 First local level

15 The second localization layer

2 first electrode

21 electrode pads

22 extension electrode

3 second electrode

4 conductive layer

5 reflective layer

6 joint structure

7 base

8 Insulation Department

8a pores

81 middle layer

811 First heavily doped layer

812 Second heavily doped layer

9 Second epitaxial stack

91 Third semiconductor structure

92 Fourth semiconductor structure

93 Second active zone

931 Fourth well layer

932 Fourth barrier layer

933 fifth well layer

934 fifth barrier layer

935 Sixth well layer

936 Sixth barrier layer

94 The third limited layer

95 The fourth localized layer

T1 first thickness

T2 second thickness

T3 third thickness

T4 fourth thickness

300 Semiconductor components

31 Package substrate

32 through holes

33 carrier

33a Part 1

33b Part 2

35 bonding wire

36 contact structure

36a first contact pad

36b second contact pad

38 encapsulation layers

400 sensing module

420 carrier

411 First semiconductor element

431 Second semiconductor element

421 First retaining wall

422 Second retaining wall

423 The third retaining wall

424 carrier board

425 First Space

426 Second Space

Detailed ways

The following embodiments will illustrate the concept of the present invention along with the accompanying drawings. In the drawings or descriptions, similar or identical components will be described using similar or identical reference numerals, and if not otherwise specified, the shape of each element in the drawings or dimensions are only examples and are not actually limited thereto. It should be noted that components not shown or described in the figures may be in forms known to those of ordinary skill in the art.

Unless otherwise specified, the general formula InGaP represents In _x0 Ga _1-x0 P, where 0<x0<1; the general formula AlInP represents Al _x1 In _1-x1 P, where 0<x1<1; the general formula AlGaInP represents Al _x2 Ga _x3 In _1-x2-x3 P, where 0<x2<1 and 0<x3<1; the general formula InGaAsP represents In _x4 Ga _1-x4 As _x5 P _1-x5 , where 0<x4<1, 0 <x5<1; the general formula AlGaInAs represents Al _x6 Ga _x7 In _1-x6-x7 As, where 0<x6<1, 0<x7<1; the general formula InGaNAs represents In _x8 Ga _1-x8 N _x9 As _1-x9 , where 0<x8<1, 0<x9<1; the general formula InGaAs represents In _x10 Ga _1-x10 As, where 0<x10<1; the general formula AlGaAs represents Al _x11 Ga _1-x11 As, where 0<x11< 1. The content of each element can be adjusted according to different purposes, such as but not limited to adjusting the energy gap size, or when the semiconductor element is a light-emitting element, the domain wavelength or peak wavelength of the light-emitting element can be adjusted accordingly.

The semiconductor element of the present invention is, for example, a light-emitting element (such as a light-emitting diode, a laser diode), a light-absorbing element (such as a photo-detector), or a non-light-emitting element. The composition of each layer and dopant included in the semiconductor device of the present invention can be analyzed by any suitable method, such as secondary ion mass spectrometer (SIMS), and the thickness of each layer can also be determined by any suitable method. It is obtained by analysis using a transmission electron microscope (TEM) or a scanning electron microscope (SEM).

Those of ordinary skill in the art should understand that other components can be added on the basis of each embodiment described below. For example, unless otherwise stated, similar descriptions such as "a first layer (or structure) is located on a second layer (or structure)" may include the first layer (or structure) and the second layer (or structure). Embodiments of direct contact may also include embodiments in which the first layer (or structure) and the second layer (or structure) have other structures but are not in direct contact with each other. In addition, it should be understood that the upper and lower position relationships of each layer (or structure) may change due to observation from different directions.

In addition, in the present utility model, the statement that a layer or structure "substantially consists of M" means that the main component of the above-mentioned layer or structure is M, but it does not exclude that the above-mentioned layer or structure contains dopants or unavoidable impurities ( impurities).

FIG. 1 is a schematic cross-sectional view of a semiconductor device 100 according to an embodiment of the present invention. The semiconductor device 100 includes an epitaxial structure, and the epitaxial structure includes a first epitaxial stack 1 . The semiconductor device 100 further includes a first electrode 2 and a second electrode 3 respectively located on the upper and lower sides of the first epitaxial stack 1 , a conductive layer 4 , a reflective layer 5 , a bonding structure 6 and a substrate 7 . The conductive layer 4 is located between the first epitaxial stack 1 and the reflective layer 5 , and the bonding structure 6 is located between the substrate 7 and the reflective layer 5 . As shown in FIG. 1 , the semiconductor device 100 selectively includes a plurality of insulating portions 8 located between the conductive layer 4 and the first epitaxial stack 1 , and a plurality of pores 8 a located between the plurality of insulating portions 8 . The conductive layer 4 contacts the plurality of insulating portions 8 and fills the plurality of pores 8 a, and contacts the first epitaxial stack 1 . The first electrode 2 may include an electrode pad 21 and an extended electrode 22 connected to the electrode pad 21 . In one embodiment, the first electrode 2 only includes electrode pads and does not include extended electrodes.

The first epitaxial stack 1 includes a first semiconductor structure 11, a second semiconductor structure 12, a first active region 13 located between the first semiconductor structure 11 and the second semiconductor structure 12, and a first confinement layer 14 located between the first semiconductor structure 11 and the second semiconductor structure 12. An active region 13 is located between the first semiconductor structure 11 and a second confinement layer 15 is located between the first active region 13 and the second semiconductor structure 12 . The first semiconductor structure 11 and the second semiconductor structure 12 may have different conductive types. For example, the first semiconductor structure 11 is n-type and the second semiconductor structure 12 is p-type; or the first semiconductor structure 11 is p-type and the second semiconductor structure 12 is n-type. Therefore, the first semiconductor structure 11 and the second semiconductor structure 12 can respectively provide electrons and holes or holes and electrons. The first semiconductor structure 11 has a first dopant, and the second semiconductor structure 12 has a second dopant, so that the first semiconductor structure 11 and the second semiconductor structure 12 have different conductivities. The first dopant and the second dopant may be carbon (C), zinc (Zn), silicon (Si), germanium (Ge), tin (Sn), selenium (Se), magnesium (Mg) or tellurium (Te) respectively. ). In this embodiment, the second semiconductor structure 12 is N-type, and the first dopant is tellurium (Te) or silicon (Si). The first semiconductor structure 11 is P-type, and the first dopant is magnesium (Mg). or carbon (C), and the doping concentration of the first semiconductor structure 11 and the second semiconductor structure 12 is about 5×10 ¹⁷ /cm ³ to 1×10 ²⁰ /cm ³ . The energy gaps of the first semiconductor structure 11 and the second semiconductor structure 12 are respectively larger than the first confinement layer 14 and the second confinement layer 15 , thereby further confining the carriers in the first active region 13 .

Viewed from the cross-section of the semiconductor device 100 , the first epitaxial stack 1 may selectively include a plurality of contact portions 111 away from the first active region 13 and close to the conductive layer 4 . The semiconductor device 100 includes a gap 111 a between two adjacent contact portions 111 . The plurality of contact portions 111 have a first dopant, and the first dopant concentration in the plurality of contact portions 111 is greater than the first dopant concentration of the first semiconductor structure 11 . In this embodiment, there is no contact portion 111 below the electrode pad 21 , that is, the electrode pad 21 and the plurality of contact portions 111 are offset from each other in the vertical direction. In other words, in the vertical direction, the electrode pad 21 overlaps the gap 111a. In the horizontal direction, the width of the gap 111 a is larger than the width of the electrode pad 21 . In other embodiments, the plurality of contact portions 111, the electrode pads 21 and the extended electrodes 22 may be offset from each other. Through the above-mentioned misaligned relationship between the first electrode 2 and the contact portion 111 , current can be prevented from being directly conducted under the first electrode 2 , thereby increasing current dispersion and thereby improving the brightness of the semiconductor element 100 . The material of the plurality of contacts 111 may include a III-V semiconductor material, such as a binary III-V semiconductor material such as GaAs, GaP, GaN, etc.

The plurality of insulating portions 8 are located under the plurality of contact portions 111 and contact the plurality of contact portions 111 . The plurality of insulating parts 8 includes a first insulating part 81 and a second insulating part 82 . The plurality of holes 8a include a first hole 8a1 located between the first insulating part 81 and the second insulating part 82. In one embodiment, there is no insulating portion 8 below the electrode pad 21 , that is, the electrode pad 21 and the plurality of insulating portions 8 are offset from each other in the vertical direction. In other words, the electrode pad 21 and the first hole 8a1 overlap in the vertical direction. In the horizontal direction, the width of the first hole 8a1 is greater than the width of the electrode pad 21. In one embodiment, the width of the first aperture 8a1 is greater than the width of the gap 111a.

In one embodiment, the plurality of insulating parts 8 further include a third insulating part 83 . The plurality of pores 8a also include a second pore 8a2 located between the second insulating part 82 and the third insulating part 83. In the vertical direction, the second pore 8a2 overlaps the contact part 111 and does not overlap the electrode pad 21. In an embodiment, the conductive layer 4 can fill the first pore 8a1 and the second pore 8a2 and contact the plurality of contacts 111, and the conductive layer 4 can fill the gap 111a and connect with the first semiconductor structure 11.

The first semiconductor structure 11 , the second semiconductor structure 12 , the first active region 13 , the first confinement layer 14 and the second confinement layer 15 may respectively include III-V semiconductor materials. The above-mentioned Group III and V semiconductor materials may include Al, Ga, As, P or In. In one embodiment, the first semiconductor structure 11 , the second semiconductor structure 12 , the first active region 13 , the first confinement layer 14 and the second confinement layer 15 do not contain N. Specifically, the above-mentioned III-V semiconductor materials can be binary compound semiconductors (such as GaAs or GaP), ternary compound semiconductors (such as InGaAs, AlGaAs, InGaP or AlInP) or quaternary compound semiconductors (such as AlGaInAs, AlGaInP, InGaAsP, InGaAsN or AlGaAsP). In one embodiment, the first active region 13 is essentially composed of a ternary compound semiconductor (such as InGaAs, AlGaAs, InGaP or AlInP) or a quaternary compound semiconductor (such as AlGaInAs, AlGaInP, InGaAsP or AlGaAsP).

The semiconductor device 100 may include a double heterostructure (DH), a double-side double heterostructure (DDH) or a multiple quantum wells (MQW) structure. According to an embodiment, when the semiconductor device 100 is a light-emitting device, the first active region 13 can emit light from the first semiconductor structure 11 toward the second semiconductor structure 12 . The light includes visible light or invisible light. The wavelength of the light emitted by the semiconductor device 100 is determined by the material of the first active region 13 . The material of the first active region 13 may include InGaAs, AlGaAsP or GaAsP, InGaAsP, AlGaAs, AlGaInAs, InGaP or AlGaInP. For example, the first active region 13 can emit infrared light with a peak wavelength of 700 to 1700 nm, red light with a peak wavelength of 610 nm to 700 nm, or yellow light with a peak wavelength of 530 nm to 600 nm. In this embodiment, the first active area 13 emits infrared light with a peak wavelength of 730 nm to 1100 nm.

In this embodiment, the crystal system of each layer of material of the epitaxial structure is cubic and has a zincblende structure. In one embodiment, there is no polarization in each layer of the epitaxial structure, that is, the polarization vector of each layer is approximately zero.

Continuing to refer to FIG. 1 , the first active area 13 is located between the first localization layer 14 and the second localization layer 15 , and in this embodiment, the first active area 13 and the first localization layer 14 are directly connected, and the first active area 13 is directly connected to the first localization layer 14 . The active area 13 is directly connected to the second localization layer 15 . The first active region 13 includes a first well layer 131, a first barrier layer 132, a second well layer 133 and a second barrier layer 134 sequentially stacked on the first confinement layer 14, and the first well layer 131 is relatively The second well layer 133 is close to the first confinement layer 14 . The first active region 13 may further include a third well layer 135 and a third barrier layer 136 sequentially stacked on the second barrier layer 134, and the second well layer 133 is closer to the first region than the third well layer 135. Layer 14. The first well layer 131 , the second well layer 133 and the third well layer 135 include indium (In), and the composition ratio of indium in the first well layer 131 is smaller than the composition ratio of indium in the second well layer 133 . The composition ratio of indium in the third well layer 133 is smaller than that in the third well layer 135 . When the first active region 13 has a plurality of overlapping well layers and barrier layers, the indium composition ratio of the well layers in the first active region 13 increases from the first confinement layer 14 toward the second confinement layer 15 . In one embodiment, the difference in the indium composition ratio between the first well layer 131 and the second well layer 133 is 0.1% to 0.3%, and the difference in the indium composition ratio between the second well layer 133 and the third well layer 135 is 0.1% to 0.3 %, and the difference in indium composition ratio between the first well layer 131 and the third well layer 133 is 0.2% to 0.6%.

In other embodiments, the first active structure 13 has a plurality of well layers (131, 133, 135) with the above-mentioned indium composition ratio increasing from the first confinement layer 14 to the second confinement layer 15, and in the third well layer There are also multiple well layers on 135 with a fixed indium composition ratio. That is, these multiple well layers have a fixed indium composition ratio in the direction from the first confinement layer 14 to the second confinement layer 15 , and this fixed indium composition ratio is greater than the indium composition ratio of the third well layer 135 . In another embodiment, the fixed indium composition ratio is smaller than the indium composition ratio of the third well layer 135 .

In an embodiment, the first confinement layer 14, the second confinement layer 15 and the barrier layers (132, 134, 136) may have the same or different energy gaps. The first confinement layer 14, the second confinement layer 15 and the barrier layers (132, 134, 136) may have the same or different materials. The energy gaps of the first confinement layer 14 and the second confinement layer 15 are larger than the energy gaps of the well layers (131, 133, 135), which can also help confine carriers in the first active region 13.

In this embodiment, the material of the first well layer 131 and the second well layer 133 is InGaAs, and the material of the second barrier layer 132 and the second barrier layer 134 is AlGaAs. In other embodiments, the material of the first well layer 131 and the second well layer 133 is InGaAs, and the material of the second barrier layer 132 and the second barrier layer 134 is AlGaAsP; in another embodiment, the first well layer 131 and the second well layer 133 are made of InGaAs. The material of the layer 131 and the second well layer 133 is InGaAs, and the material of the second barrier layer 132 and the second barrier layer 134 is GaAsP. In the first active region 13 of the semiconductor device 100 in this embodiment, the thickness of the well layer (131, 133, 135) is smaller than the thickness of the barrier layer (132, 134, 136). The well layer and/or barrier layer may or may not include dopants.

In another embodiment, the thickness of the first well layer 131 is less than the thickness of the second well layer 133 , and the thickness of the second well layer 133 is less than the thickness of the third well layer 135 . When the first active region 13 has a plurality of overlapping well layers and barrier layers, the thickness of the well layers in the first active region 13 increases from the first confinement layer 14 to the second confinement layer 15 . By designing the indium composition ratio and/or thickness of the first well layer 131 and the second well layer 133, the semiconductor device 100 can have better optoelectronic performance, such as increased luminous intensity and reduced forward voltage (Vf). wait.

When the semiconductor element is a light-emitting element and is driven, the original wave peak (first signal) will shift to a longer wavelength, or a second signal with a longer wavelength will appear to the right of the original wave peak. The above-mentioned design of the indium composition ratio and/or thickness of the first well layer 131 and the second well layer 133 also helps to prevent unexpected spectral changes of the semiconductor element and maintain the stability of the semiconductor element under different current drives. Efficacy of luminescence wavelength stability.

The first confinement layer 14 and the second confinement layer 15 are used to prevent carriers in the first active region 13 from overflowing. In the embodiment of the present invention, the first confinement layer 14 has a first thickness T1, and the second confinement layer 15 has a second thickness T2 greater than the first thickness T1, in order to avoid the second thickness T1 in the second semiconductor structure 12. The dopant enters the first active region 13 and affects the light-emitting characteristics of the semiconductor device 100 . In this embodiment, the first thickness T1 is, for example, 150 nm to 400 nm, and the second thickness T2 is, for example, 300 nm to 650 nm. In one embodiment, T2/T1 is greater than 2. The thicker second confinement layer 15 can effectively block the second dopant in the second semiconductor structure 12 from entering the first active region 13 , thereby reducing the dopant concentration of the second dopant in the first active region 13 . In other words, the first active region 13 may have a second dopant and the dopant concentration is less than 1×10 ¹⁶ /cm ³ . Through the design method in which the second thickness T2 is greater than the first thickness T1, the semiconductor element 100 can have better optoelectronic performance, such as increased luminous intensity, reduced forward voltage (Vf), etc. In addition, the thinner first confinement layer 14 also helps to make it easier for carriers to enter the first active region 13 , thereby achieving the effect of improving the optoelectronic performance of the semiconductor device 100 . In this embodiment, the first confinement layer 14 is directly connected to the first semiconductor structure 11 , and the second confinement layer 15 is directly connected to the second semiconductor structure 12 .

In one embodiment, the first confinement layer 14 and the second confinement layer 15 may or may not include dopants. Dopants may be intentional or unintentional. When the dopant in the first localization layer 14 and the second localization layer 15 is unintentionally doped, the dopant enters the first localization layer 14 and the second localization layer 15 during the epitaxial growth process. Overall, these dopants are not doped intentionally. The intentionally doped dopant concentration may be significantly (eg, 1 to 2 orders of magnitude) smaller than the dopant concentrations in the first semiconductor structure 11 and the second semiconductor structure 12. In one embodiment, the first confinement layer 14 and the second The concentration of intentional doping or unintentional doping in the localization layer 15 is less than 1×10 ¹⁷ /cm ³ . The first thickness T1 and the second thickness T2 are respectively smaller than the thickness of the first semiconductor structure 11 and the thickness of the second semiconductor structure 13 , and both the first thickness T1 and the second thickness T2 of this embodiment are larger than those in the first active region 13 Thicknesses of barrier layers (132, 134, 136) and well layers (131, 133, 135).

The substrate 7 contains electrically conductive or insulating material. Conductive materials such as gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC), gallium phosphide (GaP), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), Germanium (Ge) or silicon (Si). Insulating material such as sapphire. In other embodiments, the substrate 7 is a growth substrate, that is, the first epitaxial stack 1 can be epitaxially formed on the substrate 7 by, for example, metal-organic chemical vapor deposition (MOCVD). In one embodiment, the substrate 7 is a bonding substrate rather than a growth substrate, which can be bonded to the first epitaxial stack 1 through the bonding structure 6 , as shown in FIG. 1 .

The first electrode 2 and the second electrode 3 are used for electrical connection with an external power supply. The materials of the first electrode 2 and the second electrode 3 may be the same or different, for example, they may respectively include metal oxide materials, metals or alloys. Metal oxide materials include indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO) , Gallium zinc oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO) or indium zinc oxide (IZO), etc. Examples of the metal include germanium (Ge), beryllium (Be), zinc (Zn), gold (Au), platinum (Pt), titanium (Ti), aluminum (Al), nickel (Ni) or copper (Cu). The alloy may include at least two selected from the group consisting of the above metals, such as germanium gold nickel (GeAuNi), beryllium gold (BeAu), germanium gold (GeAu) or zinc gold (ZnAu).

The insulating part 8 includes an insulating material with a refractive index less than 2, such as silicon nitride (SiN _x ), aluminum oxide (AlO _x ), silicon oxide (SiO _x ), magnesium fluoride (MgF _x ) or combinations thereof. The conductive layer 4 may include metal oxide materials, such as indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO) , zinc tin oxide (ZTO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), indium zinc oxide (IZO) or a combination of the above materials.

The reflective layer 5 can reflect the light emitted from the first active area 13 so as to be emitted out of the semiconductor element 100 toward the first electrode 2 . Reflective layer 5 may comprise semiconductor material, metal or alloy. The semiconductor material may include a III-V semiconductor material, such as a binary, ternary or quaternary III-V semiconductor material. Metals include but are not limited to copper (Cu), aluminum (Al), tin (Sn), gold (Au), silver (Ag), etc. The alloy may include at least two selected from the group consisting of the above metals. In one embodiment, the reflective layer 5 may include a Distributed Bragg Reflector structure (DBR). The Bragg reflection structure can be formed by alternately stacking two or more semiconductor materials with different refractive indexes, such as AlAs/GaAs, AlGaAs/GaAs or InGaP/GaAs.

The bonding structure 6 connects the substrate 7 and the reflective layer 5 . In one embodiment, the bonding structure 6 can be a single layer or multiple layers (not shown). The material of the joint structure 6 may include transparent conductive materials, metals or alloys. Transparent conductive materials include but are not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), zinc oxide (ZnO), gallium phosphide (GaP), indium cerium oxide (ICO), indium tungsten oxide (IWO), indium titanium oxide (ITiO), indium zinc oxide (IZO) ), indium gallium oxide (IGO), gallium aluminum zinc oxide (GAZO), graphene or a combination of the above materials. Metals include but are not limited to copper (Cu), aluminum (Al), tin (Sn), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), platinum (Pt) or tungsten (W), etc. . The alloy may include at least two selected from the group consisting of the above metals.

FIG. 2 is a schematic diagram of the epitaxial structure of a semiconductor device according to another embodiment of the present invention. In this embodiment, in addition to the above-mentioned first epitaxial stack 1, the epitaxial structure also includes a second epitaxial stack 9 located on the first epitaxial stack 1, and the first epitaxial stack 1 and the second epitaxial stack 9 There is an intermediate layer 81 between 9. The second epitaxial stack 9 includes a third semiconductor structure 91, a fourth semiconductor structure 92, a second active region 93 located between the third semiconductor structure 91 and the fourth semiconductor structure 92, and a third confinement layer 94 located between the second semiconductor structure 91 and the fourth semiconductor structure 92. Between the active area 93 and the third semiconductor structure 91 , and a fourth localization layer 95 is located between the second active area 93 and the fourth semiconductor structure 92 , and the third localization layer 94 is closer to the first localization than the fourth localization layer 95 Layer 14. The third semiconductor structure 91 and the fourth semiconductor structure 92 may have different conductive types. For example, the third semiconductor structure 91 is n-type and the fourth semiconductor structure 92 is p-type; or the third semiconductor structure 91 is p-type and the fourth semiconductor structure 92 is n-type. Therefore, the third semiconductor structure 91 and the fourth semiconductor structure 92 can provide electrons and holes respectively. The third semiconductor structure 91 has a third dopant, and the fourth semiconductor structure 92 has a fourth dopant, so that they have different conductivity. The third dopant may be the same as or different from the first dopant, and the fourth dopant may be the same as or different from the second dopant. The materials of the third dopant and the fourth dopant can be selected with reference to the above-mentioned materials of the first dopant and the second dopant.

In this embodiment, the third semiconductor structure 91 has an opposite conductivity type to the second semiconductor structure 12 and has the same conductivity type as the first semiconductor structure 11 . The intermediate layer 81 disposed between the third semiconductor structure 91 and the second semiconductor structure 12 is used to allow carriers to tunnel between the first semiconductor stack 1 and the second semiconductor stack 9 . Specifically, the intermediate layer 81 includes a pn junction, which is formed by a first heavily doped layer 811 having a first conductivity (for example, an n-type conductive semiconductor layer) and a third layer having a second conductivity. It is composed of a double doped layer 812 (for example, a p-type conductive semiconductor layer). The first heavily doped layer 811 and the second heavily doped layer 812 have a doping concentration that is at least one order of magnitude higher than the doping concentrations of the second semiconductor structure 12 and the third semiconductor structure 91 , for example, have a doping concentration higher than 1 The doping concentration is ×10 ¹⁸ /cm ³ to provide a low resistance electrical junction during operation.

The second active region 93 and the first active region 13 have similar structures, material compositions, and emission wavelengths. For example, the second active region 93 and the first active region 13 both emit infrared light with a peak wavelength of 730 nm to 1100 nm. In detail, the second active region 93 includes a fourth well layer 931, a fourth barrier layer 932, a fifth well layer 933 and a fifth barrier layer 934 sequentially stacked on the third confinement layer 94, and the fourth The well layer 931 is closer to the third confinement layer 94 than the fifth well layer 933 . The second active region 93 may also include a sixth well layer 935 and a sixth barrier layer 936 sequentially stacked on the fifth barrier layer 934. The fifth well layer 933 is closer to the third localization layer than the sixth well layer 935. 94. The fourth well layer 931, the fifth well layer 933, and the sixth well layer 935 include indium (In), and the indium composition ratio in the fourth well layer 931 is smaller than the indium composition ratio in the fifth well layer 933. The fifth well layer The composition ratio of indium in 933 is smaller than that in the sixth well layer 935 . When the second active region 93 has a plurality of overlapping well layers and barrier layers, the indium composition ratio of the well layers in the second active region 93 increases from the third confinement layer 94 toward the fourth confinement layer 95 . In another embodiment, the thickness of the fourth well layer 931 is less than the thickness of the fifth well layer 933 , and the thickness of the fifth well layer 933 is less than the thickness of the sixth well layer 935 . When the second active region 93 has a plurality of overlapping well layers and barrier layers, the thickness of the well layers in the second active region 93 increases from the third confinement layer 94 toward the fourth confinement layer 95 . As mentioned above, by designing the indium composition ratio and/or thickness of the well layer, the semiconductor element can have better optoelectronic performance.

The third confinement layer 94 and the fourth confinement layer 95 are used to prevent carriers in the second active region 93 from overflowing. The third localization layer 94 has a third thickness T3, and the fourth localization layer 95 has a fourth thickness T4 that is greater than the third thickness T3 to prevent the fourth dopant in the fourth semiconductor structure 92 from entering the second active region 93. And affect the luminescence characteristics of semiconductor components. In this embodiment, the third thickness T3 is, for example, 150 nm to 400 nm, and the fourth thickness T4 is, for example, 300 nm to 650 nm. In one embodiment, T4/T3 is greater than 2, the third thickness T3 is approximately equal to the first thickness T1, and the fourth thickness T4 is approximately equal to the second thickness T2. In another embodiment, T3>T1, T4>T2, and T2>T1, T4>T3; in yet another embodiment, T3<T1, T4<T2, and T2>T1, T4>T3.

The thickness design of the above-mentioned localization layers 14, 15, 94, 95 (that is, the second thickness T2 is greater than the first thickness T1 and/or the fourth thickness T4 is greater than the third thickness T3), the first active region 13 and/or the second active area The indium composition ratio of the well layer in the region 93 is designed (that is, the indium composition ratio of the well layer increases from the first confinement layer 14 to the second confinement layer 15 and/or from the third confinement layer 94 to the fourth confinement layer 95 ), the thickness design of the well layer in the first active region 13 and/or the second active region 93 (that is, the thickness of the well layer is from the direction of the first confinement layer 14 to the second confinement layer 15 and/or from the third confinement layer layer 94 toward the fourth localization layer 95), if the dopant concentration of the first semiconductor structure 11 and/or the second semiconductor structure 12 is further increased to 8×10 ¹⁷ to 5×10 ¹⁸ /cm ³ , and/ Or epitaxial structural features such as the aluminum content of the first semiconductor structure 11 and/or the second semiconductor structure 12 being 25% to 50% will help increase the carrier concentration and/or enhance the current dispersion effect, thereby improving the semiconductor device. Efficacy of 100 luminous intensity. The above epitaxial structural features are particularly suitable for semiconductor devices operating at high current densities, such as semiconductor devices with current densities of 0.5 A/mm ² to 2 A/mm ² . The current density is the quotient of the current value applied to the semiconductor element 100 during operation and the surface area of the substrate 7 . For example: the current value applied to the semiconductor element during operation is 100mA, and the base area of the semiconductor element is 0.125mm ² , then the current density is 0.8A/mm ² . The aluminum content refers to the atomic percentage of aluminum. For example, when the material of the first semiconductor structure 11 and/or the second semiconductor structure 12 is AlGaAs and the aluminum content is 25%, the material composition is Al _0.25 Ga _0.75 As.

For example, in one embodiment, the semiconductor element is a light-emitting element and has a design in which the first thickness T1 is smaller than the second thickness T2. If the dopant concentration of the first semiconductor structure 11 is 8×10 ¹⁷ to 5 ^{The epitaxial structural} features of In another embodiment, the semiconductor element is a light-emitting element and has a design in which the first thickness T1 is smaller than the second thickness T2. If the first semiconductor structure 11 is combined with an epitaxial structural feature having an aluminum content of 25% to 50%, Compared with a light-emitting element without the above-mentioned epitaxial structural features, when operating at a current density of 1.7 A/mm ² , the luminous intensity of the light-emitting element of this embodiment can be increased by 6.1%.

FIG. 3 is a schematic cross-sectional structural diagram of a semiconductor component 300 according to an embodiment of the present invention. Referring to FIG. 3 , the semiconductor component 300 includes a semiconductor element 100 , a packaging substrate 31 , a carrier 33 , bonding wires 35 , contact structures 36 and packaging layers 38 . The packaging substrate 31 may include ceramic or glass materials. The package substrate 31 has a plurality of through holes 32 therein. The through hole 32 may be filled with conductive material such as metal to facilitate conduction and/or heat dissipation. The carrier 33 is located on the surface of one side of the packaging substrate 31 and also includes conductive material, such as metal. Contact structure 36 is located on the surface of the other side of package substrate 31 . In this embodiment, the contact structure 36 includes a first contact pad 36 a and a second contact pad 36 b, and the first contact pad 36 a and the second contact pad 36 b can be electrically connected to the carrier 33 through the through hole 32 . In one embodiment, the contact structure 36 may further include a thermal pad (not shown), for example, located between the first contact pad 36a and the second contact pad 36b.

Semiconductor component 100 is located on carrier 33 . In this embodiment, the carrier 33 includes a first part 33 a and a second part 33 b, and the semiconductor element 100 is electrically connected to the second part 33 b of the carrier 33 through the bonding wire 35 . The material of the bonding wire 35 may include metal, such as gold, silver, copper, aluminum or an alloy containing at least any of the above elements. The encapsulation layer 38 covers the semiconductor element 100 and has the effect of protecting the semiconductor element 100 . Specifically, the encapsulation layer 38 may include resin materials such as epoxy, silicone, etc. The encapsulation layer 38 may optionally include a plurality of wavelength conversion particles (not shown) to convert the first light emitted by the semiconductor device 100 into a second light. The wavelength of the second light is greater than the wavelength of the first light.

4 is a partial cross-sectional structural diagram of a sensing module 400 according to an embodiment of the present invention. The sensing module 400 includes a carrier 420, a first semiconductor element 411 and a second semiconductor element 431. The first semiconductor element 411 and/or the second semiconductor element 431 may be the above-mentioned semiconductor elements. The carrier 420 includes a first retaining wall 421, a second retaining wall 422, a third retaining wall 423, a carrier plate 424, a first space 425 and a second space 426. The first semiconductor element 411 is located between the first retaining wall 421 and the second retaining wall 423. In the space 425 between the two blocking walls 422 , the second semiconductor element 431 is located in the space 426 between the second blocking wall 422 and the third blocking wall 423 . The first semiconductor element 411 and/or the second semiconductor element 431 may be a vertical chip as shown in FIG. 1 , or a flip chip or a full chip chip having the epitaxial structure of FIG. 1 or FIG. 2 . The first semiconductor element 411 and the second semiconductor element 431 are located on the carrier board 424 and are electrically connected to the circuit connection structure (not shown) on the carrier board 424 . In this implementation, the first semiconductor element 411 is a light-emitting element, the second semiconductor element 431 is a light-receiving element, and the sensing module 400 can be placed in a wearable device (such as a watch, earphones). The first semiconductor element 411 The emitted light passes through the skin and irradiates the body cells and blood, and then absorbs the light scattered/reflected back from the body cells and blood through the second semiconductor element 431. Based on the changes in the reflected and scattered light, it is used to detect physiological signals of the human body. , such as: heart rate, blood sugar, blood pressure, blood oxygen concentration, etc.

Specifically, the epitaxial structures, semiconductor elements and semiconductor components of the present invention can be applied to products in the fields of lighting, medical care, display, communication, sensing, power supply systems, etc., such as lamps, monitors, mobile phones, tablet computers, and automotive products. Dashboards, TVs, computers, wearable devices (such as watches, bracelets, necklaces, etc.), traffic signals, outdoor displays, medical equipment, etc.

Although the present utility model has been disclosed in conjunction with the above embodiments, they are not intended to limit the present utility model. Those of ordinary skill in the art will understand that slight modifications or modifications may be made without departing from the spirit and scope of the present utility model. Therefore, the protection scope of the present utility model shall be defined by the appended claims. In addition, the above-described embodiments may be combined or replaced with each other under appropriate circumstances and are not limited to the specific embodiments described. For example, the relevant parameters of a specific component or the connection relationship between a specific component and other components disclosed in one embodiment can also be applied to other embodiments, and all fall within the scope of rights protection of the present invention.

Claims (20)

1. A semiconductor component, characterized in that the semiconductor component includes: An epitaxial structure includes a first epitaxial stack, the first epitaxial stack including a first semiconductor structure, a second semiconductor structure and a first active region between the first semiconductor structure and the second semiconductor structure, the second The semiconductor structure and the first semiconductor structure have different conductive types; a plurality of contacts located under the first semiconductor structure and contacting the first semiconductor structure; a plurality of insulating portions located under the plurality of contact portions and contacting the plurality of contact portions; A first electrode located on the second semiconductor structure and including an electrode pad and an extended electrode; Wherein, the plurality of contact portions, the plurality of insulating portions and the electrode pad are mutually offset in the vertical direction, and the plurality of contact portions and the extended electrode overlap in the vertical direction. 2. The semiconductor device according to claim 1, wherein the plurality of insulating parts includes a first insulating part and a second insulating part, and in a cross-sectional view, the semiconductor device further includes a gap located between two adjacent ones of the insulating parts. Between the plurality of contact parts, and the first hole is located between the first insulating part and the second insulating part, the gap, the first hole and the electrode pad overlap in the vertical direction. 3. The semiconductor device of claim 2, wherein in a horizontal direction, the width of the gap and the width of the first pore are greater than the width of the electrode pad. 4. The semiconductor device of claim 1, wherein a thickness of the contact portion is smaller than a thickness of the insulating portion. 5. The semiconductor device of claim 2, wherein a width of the gap in a horizontal direction is smaller than a width of the first aperture. 6. The semiconductor device of claim 1, wherein the first semiconductor structure has a first surface facing the first active region and a second surface contacting the plurality of contact portions, and the first surface The width is less than the width of the second surface. 7. The semiconductor element of claim 2, further comprising a conductive layer located under the plurality of insulating portions, the conductive layer contacts the plurality of insulating portions and fills the gap and the first pore. 8. The semiconductor device of claim 7, wherein the conductive layer contacts the plurality of contact portions. 9. The semiconductor device of claim 7, wherein the conductive layer is connected to the first semiconductor structure. 10. The semiconductor device according to claim 2, wherein the plurality of insulating parts further comprises a third insulating part, and in the cross-sectional view, the semiconductor device further includes a second pore located between the second insulating part and the second insulating part. Between the third insulating part, the second hole and the contact part overlap in the vertical direction. 11. The semiconductor element according to claim 1, wherein the light emitted by the semiconductor element is infrared light. 12. The semiconductor device as claimed in claim 11, wherein the peak wavelength of the emission wavelength of the first active region ranges from 730 nm to 1100 nm. 13. The semiconductor device of claim 1, wherein the epitaxial structure further comprises a second epitaxial stack located on the first epitaxial stack, the second epitaxial stack having a third semiconductor structure, a fourth semiconductor The structure and the second active region are located between the third semiconductor structure and the fourth semiconductor structure, and the third semiconductor structure and the fourth semiconductor structure have different conductive types. 14. The semiconductor device of claim 13, further comprising an intermediate layer located between the first epitaxial stack and the second epitaxial stack, the intermediate layer comprising a pn junction. 15. The semiconductor device of claim 13, wherein both the first active region and the second active region emit infrared light with a peak wavelength of 730 nm to 1100 nm. 16. The semiconductor device of claim 1, wherein the first semiconductor structure is p-type and the second semiconductor structure is n-type. 17. The semiconductor device of claim 1, further comprising a bonding structure and a substrate, the bonding structure being between the first epitaxial stack and the substrate. 18. The semiconductor device of claim 17, further comprising a reflective layer located between the first epitaxial stack and the bonding structure. 19. The semiconductor device of claim 17, further comprising a second electrode connected to a side of the substrate away from the first semiconductor structure. 20. A semiconductor component, comprising: packaging substrate; The semiconductor component according to any one of claims 1 to 19, located on the packaging substrate; and Encapsulation layer covers the semiconductor component.